In this research, we investigated the digital/analog-operation utilizing ferroelectric nondoped HfO2 (FeND-HfO2) as a blocking layer (BL) in the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM), so called FeNOS NVM. The Al/HfN0.5/HfN1.1/HfO2/p-Si(100) FeNOS diodes realized small equivalent oxide thickness (EOT) of 4.5 nm with the density of interface states (Dit) of 5.3 × 1010 eV-1cm-2 which were suitable for high-speed and low-voltage operation. The flat-band voltage (VFB) was well controlled as 80-100 mV with the input pulses of ±3 V/100 ms controlled by the partial polarization of FeND-HfO2 BL at each 2-bit state operated by the charge injection with the input pulses of +8 V/1-100 ms.

Energy harvesting has been widely investigated as a potential solution to supply power for Internet of Things (IoT) devices. Computing devices must operate intermittently rather than continuously, because harvested energy is unstable and some of IoT applications can be periodic. Therefore, processors for IoT devices with intermittent operation must feature a hibernation mode with zero-standby-power in addition to energy-efficient normal mode. In this paper, we describe the layout design and measurement results of a nonvolatile standard cell memory (NV-SCM) and nonvolatile flip-flops (NV-FF) with a nonvolatile memory using Fishbone-in-Cage Capacitor (FiCC) suitable for IoT processors with intermittent operations. They can be fabricated in any conventional CMOS process without any additional mask. NV-SCM and NV-FF are fabricated in a 180nm CMOS process technology. The area overhead by nonvolatility of a bit cell are 74% in NV-SCM and 29% in NV-FF, respectively. We confirmed full functionality of the NV-SCM and NV-FF. The nonvolatile system using proposed NV-SCM and NV-FF can reduce the energy consumption by 24.3% compared to the volatile system when hibernation/normal operation time ratio is 500 as shown in the simulation.

We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin (VWM) and read margin (VRM) of the developed (dvlp) SRAM at a supply voltage (VDD) of 1V were 0.470 and 0.1923V, respectively. These values were 1.309 and 2.093 times VWM and VRM of the conventional (conv) SRAM, respectively. At a large threshold voltage (Vt) variability (=+6σ), the minimum power supply voltage (VMin) for the write operation of the conv SRAM was 0.37V, whereas it decreased to 0.22V for the dvlp SRAM. VMin for the read operation of the conv SRAM was 1.05V when the Vt variability (=-6σ) was large, but the dvlp SRAM lowered it to 0.41V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption (PST) while retaining data. The measured PST of the 2k-bit, 90-nm dvlp SRAM was only 0.957µW at VDD=1.0V, which was 9.46% of PST of the conv SRAM (10.12µW). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.

In this paper, we propose an interpretation method on amplitude intensities for response waveforms of backward transient scattered field components for both E- and H-polarizations by a 2-D coated metal cylinder. A time-domain (TD) asymptotic solution, which is referred to as a TD Fourier transform method (TD-FTM), is derived by applying the FTM to a backward transient scattered field expressed by an integral form. The TD-FTM is represented by a combination of a direct geometric optical ray (DGO) and a reflected GO (RGO) series. We use the TD-FTM to derive amplitude intensity ratios (AIRs) between adjacent backward transient scattered field components. By comparing the numerical values of the AIRs with those of the influence factors that compose the AIRs, major factor(s) can be identified, thereby allowing detailed interpretation method on the amplitude intensities for the response waveforms of backward transient scattered field components. The accuracy and practicality of the TD-FTM are evaluated by comparing it with three reference solutions. The effectiveness of an interpretation method on the amplitude intensities for response waveforms of backward transient scattered field components is revealed by identifying major factor(s) affecting the amplitude intensities.

This paper proposes a design of high-speed interconnection between optical modules and electrical modules via bonding-wires and coplanar waveguide transmission lines on printed circuit boards for 400 Gbps 4-channel optical communication systems. In order to broaden the interconnection bandwidth, interdigitated capacitors were integrated with GSG pads on chip for the first time. Simulation results indicate the reflection coefficient is below -10 dB from DC to 53 GHz and the insertion loss is below 1 dB from DC to 45 GHz. Both indicators show that the proposed interconnection structure can effectively satisfy the communication bandwidth requirements of 100-Gbps or even higher data-rate PAM4 signals.

An interpretation method of inversion phenomena is newly proposed for backward transient scattered field components for both E- and H-polarizations when an ultra-wideband (UWB) pulse wave radiated from a line source is incident on a two-dimensional metal cylinder covered with a lossless dielectric medium layer (coated metal cylinder). A time-domain (TD) asymptotic solution, which is referred to as a TD saddle point technique (TD-SPT), is derived by applying the SPT in evaluating a backward transient scattered field which is expressed by an integral form. The TD-SPT is represented by a combination of a direct geometric optical ray (DGO) and a reflected GO (RGO) series, thereby being able to extract and calculate any backward transient scattered field component from a response waveform. The TD-SPT is useful in understanding the response waveform of a backward transient scattered field by a coated metal cylinder because it can give us the peak value and arrival time of any field component, namely DGO and RGO components, and interpret analytically inversion phenomenon of any field component. The accuracy, validity, and practicality of the TD-SPT are clarified by comparing it with two kinds of reference solutions.

This paper presents a simulation study on the printing behavior of three different EUV resist systems. Stochastic models for negative metal-based resist and conventional chemically amplified resist (CAR) were calibrated and then validated. As for negative-tone development (NTD) CAR, we commenced from a positive-tone development (PTD) CAR calibrated (material) and NTD development models, since state-of-the-art measurements are not available. A conceptual study between PTD CAR and NTD CAR shows that the stochastic inhibitor fluctuation differs for PTD CAR: the inhibitor level exhibits small fluctuation (Mack development). For NTD CAR, the inhibitor fluctuation depends on the NTD type, which is defined by categorizing the difference between the NTD and PTD development thresholds. Respective NTD types have different inhibitor concentration level. Moreover, contact hole printing between negative metal-based and NTD CAR was compared to clarify the stochastic process window (PW) for tone reversed mask. For latter comparison, the aerial image (AI) and secondary electron effect are comparable. Finally, the local CD uniformity (LCDU) for the same 20 nm size, 40 nm pitch contact hole was compared among the three different resists. Dose-dependent behavior of LCDU and stochastic PW for NTD were different for the PTD CAR and metal-based resist. For NTD CAR, small inhibitor level and large inhibitor fluctuation around the development threshold were observed, causing LCDU increase, which is specific to the inverse Mack development resist.

We propose the design method of a compact long-wavelength-pass filter implemented in a two-dimensional metal-dielectric-metal (MDM) waveguide with three stubs using a transmission line model based on a low-pass prototype filter, and present the wavelength characteristics for filters in an MDM waveguide based on 0.5- and 3.0-dB equal-ripple low-pass prototype filters.

In order to achieve an antenna with robustness to metal for closed space wireless communications, two types of the folded monopole antenna with different input impedance have been studied. In this study, we propose the folded monopole antenna, which can switch the input impedance by a simple method. Both simulated and measured results show that the proposed antenna can improve robustness to the proximity of the metal.

We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO2 directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600°C/30 s in N2, the memory window (MW) in the C-V characteristics was observed in the Al/HfO2/p-Si(100) diodes with 15 to 24-nm-thick HfO2. However, it was not obtained when the thickness of HfO2 was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO2 (10 nm)/p-Si(100) diodes utilizing PMA process at 600°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.

This paper presents a rigorous analysis of the electromagnetic scattering and transmission of misaligned dual metallic grating screens. The Fourier transform and the mode-matching technique are employed to obtain an analytical solution. Numerical results show that misaligned dual metal grating screens exhibit asymmetric scattering and transmission properties with respect to the scattering and transmission angles. Parametric studies are conducted in terms of the lateral displacement and vertical distance between the dual metallic grating screens. For validation, the proposed method is compared with a numerical simulation and good agreement has been achieved.

A PCB-integratable metal cap slot antenna is developed for the 60-GHz band. The antenna is composed of two slots and a T-junction and is fed by a post-wall waveguide on a substrate. The dimensions of the designed antenna are 8.0×4.5×2.5mm3. The designed antenna is insensitive with a metal block behind the antenna. The designed antenna is fabricated by machining a brass block and evaluated by measurement. The measurement shows reflection less than -10.0dB, gain larger than 7.8dBi and beamwidth between 54°-65° over the 60-GHz band with endfire radiation. The antenna showed high gain together with short length of half wavelength in the radiation direction. This antenna also can be integrated with printed circuit board (PCB) and is suitable for mobile terminals such as smart phones and tablets.

This paper presents the method of moments based on electric field integral equation which is capable of solving three-dimensional metallic waveguide problem with no use of another method. Metals are treated as perfectly electric conductor. The integral equation is derived in detail. In order to validate the proposed method, the numerical results are compared with those in a published paper. Three types of waveguide are considered: step discontinuity waveguide, symmetrical resonant iris waveguide, and unsymmetrical resonant iris waveguide. The numerical results are also verified by the law of conservation of energy.

A hexagonal waveguide branch line coupler suitable for additive manufacturing is proposed in this study, and its design method is elucidated. The additive manufactured Ka-band coupler exhibits characteristics similar to those of a machined coupler, but its weight and cost are reduced by 40% and 60%, respectively. Its effectiveness is also confirmed in this study.

The micro-mechanism of molten pool and metal droplet sputtering are significant to the material erosion caused by breaking or making arcs especially for high-power switching devices. In this paper, based on Navier-Stokes equations for incompressible viscous fluid and potential equation for electric field, a 2D axially symmetric simplified hydrodynamic model was built to describe the formation of the molten metal droplet sputtering and molten pool under arc spot near electrode region. The melting process was considered by the relationship between melting metal volumetric percentage and temperature, a free surface of liquid metal deformation was solved by coupling moving mesh and the automatic re-meshing. The simulated metal droplet sputtering and molten pool behaviors are presented by the temperature and velocity distribution sequences. The influence mechanism of pressure distribution and heat flux on the formation of molten pool and metal droplet sputtering has been analyzed according to the temperature distribution and sputtering angles. Based on the simulation results, we can distinguish two different models of the molten metal droplet sputtering process: edge ejection and center ejection. Moreover, a new explanation is proposed based on calculated results with arc spot pressure distribution in the form of both unimodal and bimodal. It shows that the arc spot pressure distribution plays an important role in the metal droplet ejected from molten pool, the angle of the molten jet drop can be decreased along with the increment of the arc spot pressure.

This paper presents a theoretical design of novel THz bandpass filters composed of M-PhC (metallic-photonic-crystal) point-defect-cavities (PDCs) with a centrally-loaded-rod. After a brief review of the properties of the recently-proposed M-PhC PDCs, two inline-type bandpass filters are synthesized in terms of the coupling matrix theory. The FDTD simulation results of the synthesized filters are in good agreement with the theoretical ones, which confirms the validity of the proposed filters' structures and the design scheme.

Improving robustness in electrostatic discharge (ESD) protection by inserting drain-side isolated silicon-controlled rectifiers (SCRs) in a high-voltage (HV) p-channel lateral-diffused MOSFET (pLDMOS) device was investigated in this paper. Additionally, the effects of anti-ESD reliability in the HV pLDMOS transistors provided by this technique were evaluated. From the experimental data, it was determined that the holding voltage (Vh) values of the pLDMOS with an embedded npn-arranged SCR and discrete thin-oxide (OD) layout on the cathode side increased as the parasitic SCR OD row number decreased. Moreover, the trigger voltage (Vt1) and the Vh values of the pLDMOS with a parasitic pnp-arranged SCR and discrete OD layout on the drain side fluctuated slightly as the SCR OD-row number decreased. Furthermore, the secondary breakdown current (It2) values (i.e., the equivalent ESD-reliability robustness) of all pLDMOS-SCR npn-arranged types increased (>408.4%) to a higher degree than those of the pure pLDMOS, except for npn-DIS_3 and npn-DIS_2, which had low areas of SCRs. All pLDMOS-SCR pnp-arranged types exhibited an increase of up to 2.2A-2.4A, except for the pnp_DIS_3 and pnp_DIS_2 samples; the pnp_DIS_91 increased by approximately 2000.9% (249.1%), exhibiting a higher increase than that of the reference pLDMOS (i.e., the corresponding pnp-stripe type). The ESD robustness of the pLDMOS-SCR pnp-arranged type and npn-arranged type with a discrete OD layout on the SCR cathode side was greater than that of the corresponding pLDMOS-SCR stripe type and a pure pLDMOS, particularly in the pLDMOS-SCR pnp-arranged type.

The equivalent anisotropic material parameters of metal dummy fills in a CMOS chip were extracted through an eigenmode analysis of a unit-cell of a space filled with metal dummies. The validity of the parameters was confirmed by comparing the S-parameters of a parallel-plate waveguide with the metal dummy fills and their effective material properties. The validity of the effective material properties was also confirmed by using them in a simulation of an on-chip dipole antenna.

An equivalent-circuit model is an effective tool for the analysis and design of metamaterials. This paper describes a systematic and theoretical method for the circuit modeling of meta-atoms. We focus on the structures of wired metallic spheres and propose a method for deriving a sophisticated equivalent circuit that has the same topology as the wires using the partial element equivalent circuit (PEEC) method. Our model contains the effect of external electromagnetic coupling: excitation by an external field modeled by voltage sources and radiation modeled by the radiation resistances for each mode. The equivalent-circuit model provides the characteristics of meta-atoms such as the resonant frequencies and the resonant modes induced by the current distribution in the wires by an external excitation. Although the model is obtained by a very coarse discretization, it provides a good agreement with an electromagnetic simulation.

An Al-N system optical absorption layer has been developed, to be used for Al-based metal mesh electrodes on touch screen panels. The triple-layered electrode effectively suppresses the optical reflection in both visible light and the blue color region and exhibits excellent wet etching property that accommodates micro-fabrication. Due to its high noise immunity and contact sensitivity originating from its low electrical resistivity, the proposed metal mesh electrodes are useful for touch-sensitive panels in the next generation ultra-high-resolution displays.