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  • ARW: Efficient Replacement Policies for Phase Change Memory and NAND Flash

    Xi ZHANG  Xinning DUAN  Jincui YANG  Jingyuan WANG  

     
    PAPER-Computer System

      Pubricized:
    2016/10/13
      Vol:
    E100-D No:1
      Page(s):
    79-90

    The write operations on emerging Non-Volatile Memory (NVM), such as NAND Flash and Phase Change Memory (PCM), usually incur high access latency, and are required to be optimized. In this paper, we propose Asymmetric Read-Write (ARW) policies to minimize the write traffic sent to NVM. ARW policies exploit the asymmetry costs of read and write operations, and make adjustments on the insertion policy and hit-promotion policy of the replacement algorithm. ARW can reduce the write traffic to NVM by preventing dirty data blocks from frequent evictions. We evaluate ARW policies on systems with PCM as main memory and NAND Flash as disk. Simulation results on an 8-core multicore show that ARW adopted on the last-level cache (LLC) can reduce write traffic by more than 15% on average compared to LRU baseline. When used on both LLC and DRAM cache, ARW policies achieve an impressive reduction of 40% in write traffic without system performance degradation. When employed on the on-disk buffer of the Solid State Drive (SSD), ARW demonstrates significant reductions in both write traffic and overall access latency. Moreover, ARW policies are lightweight, easy to implement, and incur negligible storage and runtime overhead.

  • A Bit-Write-Reducing and Error-Correcting Code Generation Method by Clustering ECC Codewords for Non-Volatile Memories

    Tatsuro KOJO  Masashi TAWADA  Masao YANAGISAWA  Nozomu TOGAWA  

     
    PAPER

      Vol:
    E99-A No:12
      Page(s):
    2398-2411

    Non-volatile memories are paid attention to as a promising alternative to memory design. Data stored in them still may be destructed due to crosstalk and radiation. We can restore the data by using error-correcting codes which require extra bits to correct bit errors. Further, non-volatile memories consume ten to hundred times more energy than normal memories in bit-writing. When we configure them using error-correcting codes, it is quite necessary to reduce writing bits. In this paper, we propose a method to generate a bit-write-reducing code with error-correcting ability. We first pick up an error-correcting code which can correct t-bit errors. We cluster its codeswords and generate a cluster graph satisfying the S-bit flip conditions. We assign a data to be written to each cluster. In other words, we generate one-to-many mapping from each data to the codewords in the cluster. We prove that, if the cluster graph is a complete graph, every data in a memory cell can be re-written into another data by flipping at most S bits keeping error-correcting ability to t bits. We further propose an efficient method to cluster error-correcting codewords. Experimental results show that the bit-write-reducing and error-correcting codes generated by our proposed method efficiently reduce energy consumption. This paper proposes the world-first theoretically near-optimal bit-write-reducing code with error-correcting ability based on the efficient coding theories.

  • Migration Cost Sensitive Garbage Collection Technique for Non-Volatile Memory Systems

    Sang-Ho HWANG  Ju Hee CHOI  Jong Wook KWAK  

     
    LETTER-Software System

      Pubricized:
    2016/09/12
      Vol:
    E99-D No:12
      Page(s):
    3177-3180

    In this letter, we propose a garbage collection technique for non-volatile memory systems, called Migration Cost Sensitive Garbage Collection (MCSGC). Considering the migration overhead from selecting victim blocks, MCSGC increases the lifetime of memory systems and improves response time in garbage collection. Additionally, the proposed algorithm also improves the efficiency of garbage collection by separating cold data from hot data in valid pages. In the experimental evaluation, we show that MCSGC yields up to a 82% improvement in lifetime prolongation, compared with existing garbage collection, and it also reduces erase and migration operations by up to 30% and 29%, respectively.

  • A Feasibility Study of DSP-Enabled Cancellation of Random Phase Noise Caused by Optical Coherent Transceivers in Next-Generation Optical Access Systems

    Sang-Yuep KIM  Jun-ichi KANI  Hideaki KIMURA  

     
    PAPER-Fiber-Optic Transmission for Communications

      Pubricized:
    2016/06/28
      Vol:
    E99-B No:12
      Page(s):
    2574-2582

    This paper presents a scheme that digitally cancels the unwanted phase components generated by the transmitter's laser and the receiver's local oscillator laser; such components place a substantial limit on the performance of coherent transceivers monolithically integrated with lasers in a photonic integrated circuit (PIC). Our cancellation proposal adopts the orthogonal polarization approach to provide a reference that is uncorrelated with the data signal. We elaborate on the principle of our proposal and its digital signal processing (DSP) algorithm. Experiments on a VCSEL with a linewidth of approximately 300MHz verify that our proposal can overcome the inherent phase noise limitations indicated by simulations and experiments. Our cancellation algorithm in conjunction with CMA-based polarization control is demonstrated and evaluated to confirm the feasibility of our proposal. The achievement of greatly relaxed laser linewidth will offer a significant benefit in offsetting the technical and cost requirements of coherent transceiver PICs with lasers. Therefore, our cancellation proposal is an enabling technology for the successful deployment of future coherent-based passive optical network (PON) systems.

  • Micro-Vibration Patterns Generated from Shape Memory Alloy Actuators and the Detection of an Asymptomatic Tactile Sensation Decrease in Diabetic Patients

    Junichi DANJO  Sonoko DANJO  Yu NAKAMURA  Keiji UCHIDA  Hideyuki SAWADA  

     
    PAPER-Human-computer Interaction

      Pubricized:
    2016/08/10
      Vol:
    E99-D No:11
      Page(s):
    2759-2766

    Diabetes mellitus is a group of metabolic diseases that cause high blood sugar due to functional problems with the pancreas or metabolism. Diabetic patients have few subjective symptoms and may experience decreased sensation without being aware of it. The commonly performed tests for sensory disorders are qualitative in nature. The authors pay attention to the decline of the sensitivity of tactile sensations, and develop a non-invasive method to detect the level of tactile sensation using a novel micro-vibration actuator that employs shape-memory alloy wires. Previously, we performed a pilot study that applied the device to 15 diabetic patients and confirmed a significant reduction in the tactile sensation in diabetic patients when compared to healthy subjects. In this study, we focus on the asymptomatic development of decreased sensation associated with diabetes mellitus. The objectives are to examine diabetic patients who are unaware of abnormal or decreased sensation using the quantitative tactile sensation measurement device and to determine whether tactile sensation is decreased in patients compared to healthy controls. The finger method is used to measure the Tactile Sensation Threshold (TST) score of the index and middle fingers using the new device and the following three procedures: TST-1, TST-4, and TST-8. TST scores ranged from 1 to 30 were compared between the two groups. The TST scores were significantly higher for the diabetic patients (P<0.05). The TST scores for the left fingers of diabetic patients and healthy controls were 5.9±6.2 and 2.7±2.9 for TST-1, 15.3±7.0 and 8.7±6.4 for TST-4, and 19.3±7.8 and 12.7±9.1 for TST-8. Our data suggest that the use of the new quantitative tactile sensation measurement device enables the detection of decreased tactile sensation in diabetic patients who are unaware of abnormal or decreased sensation compared to controls.

  • Development of Tactile Graph Generation Web Application Using R Statistics Software Environment

    Tetsuya WATANABE  Kosuke ARAKI  Toshimitsu YAMAGUCHI  Kazunori MINATANI  

     
    PAPER-Rehabilitation Engineering and Assistive Technology

      Pubricized:
    2016/05/06
      Vol:
    E99-D No:8
      Page(s):
    2151-2160

    We have developed software that uses the R statistics software environment to automatically generate tactile graphs — i.e. graphs that can be read by blind people using their sense of touch. We released this software as a Web application to make it available to anyone, from anywhere. This Web application can automatically generate images for tactile graphs from numerical data in a CSV file. It is currently able to generate four types of graph — scatter plots, line graphs, bar charts and pie charts. This paper describes the Web application's functions, operating procedures and the results of evaluation experiments.

  • Code Generation Limiting Maximum and Minimum Hamming Distances for Non-Volatile Memories

    Tatsuro KOJO  Masashi TAWADA  Masao YANAGISAWA  Nozomu TOGAWA  

     
    PAPER-High-Level Synthesis and System-Level Design

      Vol:
    E98-A No:12
      Page(s):
    2484-2493

    Data stored in non-volatile memories may be destructed due to crosstalk and radiation but we can restore their data by using error-correcting codes. However, non-volatile memories consume a large amount of energy in writing. How to reduce maximum writing bits even using error-correcting codes is one of the challenges in non-volatile memory design. In this paper, we first propose Doughnut code which is based on state encoding limiting maximum and minimum Hamming distances. After that, we propose a code expansion method, which improves maximum and minimum Hamming distances. When we apply our code expansion method to Doughnut code, we can obtain a code which reduces maximum-flipped bits and has error-correcting ability equal to Hamming code. Experimental results show that the proposed code efficiently reduces the number of maximum-writing bits.

  • ECC-Based Bit-Write Reduction Code Generation for Non-Volatile Memory

    Masashi TAWADA  Shinji KIMURA  Masao YANAGISAWA  Nozomu TOGAWA  

     
    PAPER-High-Level Synthesis and System-Level Design

      Vol:
    E98-A No:12
      Page(s):
    2494-2504

    Non-volatile memory has many advantages such as high density and low leakage power but it consumes larger writing energy than SRAM. It is quite necessary to reduce writing energy in non-volatile memory design. In this paper, we propose write-reduction codes based on error correcting codes and reduce writing energy in non-volatile memory by decreasing the number of writing bits. When a data is written into a memory cell, we do not write it directly but encode it into a codeword. In our write-reduction codes, every data corresponds to an information vector in an error-correcting code and an information vector corresponds not to a single codeword but a set of write-reduction codewords. Given a writing data and current memory bits, we can deterministically select a particular write-reduction codeword corresponding to the data to be written, where the maximum number of flipped bits are theoretically minimized. Then the number of writing bits into memory cells will also be minimized. Experimental results demonstrate that we have achieved writing-bits reduction by an average of 51% and energy reduction by an average of 33% compared to non-encoded memory.

  • Electrostatic Tactile Display Using Beat Phenomenon for Stimulus Localization Open Access

    Hiroshi HAGA  Kazuhide YOSHINAGA  Jiro YANASE  Daisuke SUGIMOTO  Kenichi TAKATORI  Hideki ASADA  

     
    INVITED PAPER

      Vol:
    E98-C No:11
      Page(s):
    1008-1014

    We present an electrostatic tactile display for stimulus localization. The 240-Hz electrostatic force was generated by the beat phenomenon in a region where excited X electrodes cross excited Y electrodes, which presents localized tactile sensation out of the entire surface. A 10.4-in. visual-tactile integrated display was successfully demonstrated.

  • Highly Reliable Non-volatile Logic Circuit Technology and Its Application Open Access

    Hiromitsu KIMURA  Zhiyong ZHONG  Yuta MIZUOCHI  Norihiro KINOUCHI  Yoshinobu ICHIDA  Yoshikazu FUJIMORI  

     
    INVITED PAPER

      Vol:
    E97-D No:9
      Page(s):
    2226-2233

    A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops (NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop (FF) in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7µs and 3µs with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr,Ti)O3(PZT) thin films.

  • Determining the Optimum Font Size for Braille on Capsule Paper

    Tetsuya WATANABE  

     
    LETTER-Rehabilitation Engineering and Assistive Technology

      Vol:
    E97-D No:8
      Page(s):
    2191-2194

    Braille fonts allow us to easily make braille labels on capsule paper. For legibility, fonts should be printed at optimum sizes. To find the optimum sizes for Japanese braille fonts, we conducted an experiment in which a Japanese braille font was printed at various sizes on capsule paper and read and rated by young braille users. The results show that braille printed at 17 and 18 point sizes were read faster and evaluated higher than those printed at smaller or bigger sizes.

  • Write Avoidance Cache Coherence Protocol for Non-volatile Memory as Last-Level Cache in Chip-Multiprocessor

    Ju Hee CHOI  Jong Wook KWAK  Chu Shik JHON  

     
    LETTER-Computer System

      Vol:
    E97-D No:8
      Page(s):
    2166-2169

    Non-Volatile Memories (NVMs) are considered as promising memory technologies for Last-Level Cache (LLC) due to their low leakage and high density. However, NVMs have some drawbacks such as high dynamic energy in modifying NVM cells, long latency for write operation, and limited write endurance. A number of approaches have been proposed to overcome these drawbacks. But very little attention is paid to consider the cache coherency issue. In this letter, we suggest a new cache coherence protocol to reduce the write operations of the LLC. In our protocol, the block data of the LLC is updated only if the cache block is written-back from a private cache, which leads to avoiding useless write operations in the LLC. The simulation results show that our protocol provides 27.1% energy savings and 26.3% lifetime improvements in STT-RAM at maximum.

  • Experimental Evaluation of Passive MIMO Transmission with Load Modulation for RFID Application

    Keisuke TERASAKI  Naoki HONMA  

     
    PAPER-Wireless Communication Technologies

      Vol:
    E97-B No:7
      Page(s):
    1467-1473

    This paper describes experiments on passive Multiple-Input Multiple-Output (MIMO) transmission with load modulation. PIN diodes are used as the variable impedance element at the tag side to realize multi-level modulation. The results indicate that the transmission rate of passive MIMO is up to 2 times higher than that of Single-Input Single-Output (SISO) with the same transmission power when the distance between the reader and the tag is 0.5m. Also, when the distance is 1m, MIMO offers up to 1.7 times higher transmission rate than SISO. These results indicate that passive MIMO offers high-speed data transmission even when the distance is doubled.

  • Petabit/s Optical Transmission Using Multicore Space-Division-Multiplexing Open Access

    Hidehiko TAKARA  Tetsuo TAKAHASHI  Kazuhide NAKAJIMA  Yutaka MIYAMOTO  

     
    INVITED PAPER

      Vol:
    E97-B No:7
      Page(s):
    1259-1264

    The paper presents ultra-high-capacity transmission technologies based on multi-core space-division-multiplexing. In order to realize high-capacity multi-core fiber (MCF) transmission, investigation of low crosstalk fiber and connection technology is important, and high-density signal generation using multilevel modulation and crosstalk management are also key technologies. 1Pb/s multi-core fiber transmission experiment using space-division-multiplexing is also described.

  • Effects of Voluntary Movements on Audio-Tactile Temporal Order Judgment

    Atsuhiro NISHI  Masanori YOKOYAMA  Ken-ichiro OGAWA  Taiki OGATA  Takayuki NOZAWA  Yoshihiro MIYAKE  

     
    PAPER-Office Information Systems, e-Business Modeling

      Vol:
    E97-D No:6
      Page(s):
    1567-1573

    The present study aims to investigate the effect of voluntary movements on human temporal perception in multisensory integration. We therefore performed temporal order judgment (TOJ) tasks in audio-tactile integration under three conditions: no movement, involuntary movement, and voluntary movement. It is known that the point of subjective simultaneity (PSS) under the no movement condition, that is, normal TOJ tasks, appears when a tactile stimulus is presented before an auditory stimulus. Our experiment showed that involuntary and voluntary movements shift the PSS to a value that reduces the interval between the presentations of auditory and tactile stimuli. Here, the shift of the PSS under the voluntary movement condition was greater than that under the involuntary movement condition. Remarkably, the PSS under the voluntary movement condition appears when an auditory stimulus slightly precedes a tactile stimulus. In addition, a just noticeable difference (JND) under the voluntary movement condition was smaller than those under the other two conditions. These results reveal that voluntary movements alternate the temporal integration of audio-tactile stimuli. In particular, our results suggest that voluntary movements reverse the temporal perception order of auditory and tactile stimuli and improve the temporal resolution of temporal perception. We discuss the functional mechanism of shifting the PSS under the no movement condition with voluntary movements in audio-tactile integration.

  • NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor Design Requirements for Write and Disturbance

    Koh JOHGUCHI  Kasuaki YOSHIOKA  Ken TAKEUCHI  

     
    PAPER

      Vol:
    E97-C No:4
      Page(s):
    351-359

    In this paper, we propose an optimum access method for a phase change memory (PCM) with NAND strings. A PCM with a block erase interface is proposed. The method, which has a SET block erase operation and fast RESET programming, is proposed since the SET operation causes a slow access time for conventional PCM;. From the results of measurement, the SET-ERASE operation is successfully completed while the RESET-ERASE operation is incomplete owing to serial connection. As a result, the block erase interface with the SET-ERASE and RESET program method realizes a 7.7 times faster write speed compared than a conventional RAM interface owing to the long SET time. We also give pass-transistor design guidelines for PCM with NAND strings. In addition, the write-capability and write-disturb problems are investigated. The ERASE operation for the proposed device structure can be realized with the same current as that for the SET operation of a single cell. For the pass transistor, about 4.4 times larger on-current is needed to carry out the RESET operation and to avoid the write-disturb problem than the minimum RESET current of a single cell. In this paper, the SET programming method is also verified for a conventional RAM interface. The experimental results show that the write-capability and write-disturb problems are negligible.

  • UStore: STT-MRAM Based Light-Weight User-Level Storage for Enhancing Performance of Accessing Persistent Data

    Yong SONG  Kyuho PARK  

     
    PAPER-Data Engineering, Web Information Systems

      Vol:
    E97-D No:3
      Page(s):
    497-509

    Traditionally, in computer systems, file I/O has been a big performance bottleneck for I/O intensive applications. The recent advent of non-volatile byte-addressable memory (NVM) technologies such as STT-MRAM and PCM, provides a chance to store persistent data with a high performance close to DRAM's. However, as the location of the persistent storage device gets closer to the CPU, the system software layers overheads for accessing the data such as file system layer including virtual file system layer and device driver are no longer negligible. In this paper, we propose a light-weight user-level persistent storage, called UStore, which is physically allocated on the NVM and is mapped directly into the virtual address space of an application. UStore makes it possible for the application to fast access the persistent data without the system software overheads and extra data copy between the user space and kernel space. We show how UStore is easily applied to existing applications with little elaboration and evaluate its performance enhancement through several benchmark tests.

  • Write Control Method for Nonvolatile Flip-Flops Based on State Transition Analysis

    Naoya OKADA  Yuichi NAKAMURA  Shinji KIMURA  

     
    PAPER

      Vol:
    E96-A No:6
      Page(s):
    1264-1272

    Nonvolatile flip-flop enables leakage power reduction in logic circuits and quick return from standby mode. However, it has limited write endurance, and its power consumption for writing is larger than that of conventional D flip-flop (DFF). For this reason, it is important to reduce the number of write operations. The write operations can be reduced by stopping the clock signal to synchronous flip-flops because write operations are executed only when the clock is applied to the flip-flops. In such clock gating, a method using Exclusive OR (XOR) of the current value and the new value as the control signal is well known. The XOR based method is effective, but there are several cases where the write operations can be reduced even if the current value and the new value are different. The paper proposes a method to detect such unnecessary write operations based on state transition analysis, and proposes a write control method to save power consumption of nonvolatile flip-flops. In the method, redundant bits are detected to reduce the number of write operations. If the next state and the outputs do not depend on some current bit, the bit is redundant and not necessary to write. The method is based on Binary Decision Diagram (BDD) calculation. We construct write control circuits to stop the clock signal by converting BDDs representing a set of states where write operations are unnecessary. Proposed method can be combined with the XOR based method and reduce the total write operations. We apply combined method to some benchmark circuits and estimate the power consumption with Synopsys NanoSim. On average, 15.0% power consumption can be reduced compared with only the XOR based method.

  • Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

    Woo Young CHOI  Min Su HAN  Boram HAN  Dongsun SEO  Il Hwan CHO  

     
    BRIEF PAPER

      Vol:
    E96-C No:5
      Page(s):
    714-717

    A modified modeling of residue effect on nano-electro-mechanical nonvolatile memory (NEMory) is presented for considering wet etching process. The effect of a residue under the cantilever is investigated for the optimization. The feasibility of the proposed model is investigated by finite element analysis simulations.

  • Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene

    HyunMin SEUNG  Jong-Dae LEE  Chang-Hwan KIM  Jea-Gun PARK  

     
    BRIEF PAPER

      Vol:
    E96-C No:5
      Page(s):
    699-701

    In summary, we successfully fabricated the nonvolatile hybrid polymer 4F2 memory-cell. It was based on bistable state, which was observed in PS layer that is containing a Ni nanocrystals capped with NiO tunneling barrier sandwiched by Al electrodes. The current conduction mechanism for polymer memory-cell was demonstrated by fitting the I-V curves. The electrons were charged and discharged on Ni nanocrystals by tunneling through the NiO tunneling barrier. In addition, the memory-cell showed a good and reproducible nonvolatile memory-cell characteristic. Its memory margin is about 1.410. The retention-time is more than 105 seconds and the endurance cycles of program-and-erase is more than 250 cycles. Furthermore, Thefore, polymer memory-cell would be good candidates for nonvolatile 4F2 cross-bar memory-cell.

41-60hit(168hit)