A self-induced-transparent (SIT) system that takes advantage of morphology dependent resonances (MDR's) in a Mie-sized microsphere doped with a resonant material is proposed. The present system is doubly resonant: one has microscopic origin (the two-level system), while the other has macroscopic origin (the MDR). In this geometry, owing to the feedback action of MDR's, the pulse area can be much expanded, and thus the electric-field amplitude of the incident pulse can be reduced substantially compared with the conventional one-way SIT propagation. Theoretical results that incorporate dephasing due to structural imperfections are shown.

The polarization dependence of femtosecond soliton-soliton interactions is investigated in detail. When the polarization direction of two solitons is orthogonal, the soliton interaction can be reduced in comparison to that for parallel polarization. The soliton self-frequency shift (SSFS) is still observed even in the orthogonal condition, but the quantity of the SSFS is much smaller than in the parallel condition. A stronger soliton interaction is observed between two solitons in an in-phase condition, than in an out-of-phase condition. The largest SSFS occurs in-phase with parallel polarization. The polarization dependence of femtosecond soliton interaction in a distributed erbium-doped fiber amplifier (DEDFA) is also investigated. It is shown that when the optical gain of the DEDFA is given adiabatically, the input pulse separation at which the first soliton occurs is less with orthogonal polarization. This is because the soliton pulse width is reduced due to the adiabatic soliton narrowing caused by the optical amplification.

Self-modelocking of Ti:sapphire laser has obtained with less than 2 W of argon-ion laser pumping. Two independent lasers with 36 fsec and 63 fsec in pulse duration were operated by a 6 W pump laser. In the low-threshold lasers, not only an ordinary mode-locking but also a double-pulse mode-locking, where two pulses circulating in the cavity, was stable.

A new approach to implement queues for controlling ATM switch LSI is presented. In many conventional architecture, external FIFOs are provided for each output link and used to manage the address of the buffer in an ATM switch. We reduce the number of FIFOs by using a self-timed queue with a search circuit that finds the earliest entry for each output link. Using this architecture, number of the FIFOs is reduced to 1/N, where N is the switch size. Delay priority and multicasting can be supported without doubling the number of the queues. This new queue can also be utilized as an ATM switch by itself. Evaluation chip was fabricated using 0.5-µm CMOS process technology. Inter-stage transfer speed over 500 MHz and cycle time over 125 MHz was obtained. This performance is enough for a 622-Mbps 1616 ATM Switch.

Fractal image coding using iterated transformations compresses image data by exploiting the self–similarity of an image. Its compression performance has already been discussed in [2] and several other papers. However the relation between the performance and the self–similarity remains unclear. In this paper, we evaluate fractal coding from the perspective of this relationship.

This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm2 yields an fT of 103 GHz and an fmax of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm2 in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.

Recent achievements in low-voltage and low-power circuit techniques are reported in this paper. DC current in low-voltage CMOS circuits stemming from the subthreshold current in MOS transistors, is effectively reduced by applying switched-power-line schemes. The AC current charging the capacitance in DRAM memory arrays is reduced by a partial activation of array blocks during the active mode and by a charge recycle during the refresh mode. A very-low-power reference-voltage generator is also reported to control the internal chip voltage precisely. These techniques will open the way to using giga-scale LSIs in battery-operated portable equipment.

An asynchronous spread spectrum (SS) modem for 2.4-GHz wireless LAN has been implemented using an efficient ZnO-SiO2-Si surface acoustic wave (SAW) convolver. The design of the highly efficient SAW convolver was developed at Tohoku University and commercially manufactured by Clarion Co., Japan. The modem can operate under full-duplex transmission in the same frequency range of the 2.4-GHz SS band. The SS modem is based on a direct-sequence/code-shift-keying (DS/CSK) method for the modulation. Pseudo-noise (PN) codes are chosen from a preferred pair of 127-chip m-sequences and the code rate is 14MHz. The asynchronous demodulation is simply realized utilizing the coherent correlation characteristics of the SAW convolver. Under full-duplex transmission, the self-jamming caused by a transmitted signal in the modem itself is effectively reduced by an RF isolator and the SS processing gain. The implemented modem has been tested using a coaxial cable with attenuator. A bit error rate of 10-6 under full-duplex transmission is observed at 78.3dB of a desired to undesired signal ratio. The effective range is estimated on the basis of two-path propagation model. From self-jamming rejection of 78.3dB, the effective range under real-time full-duplex is estimated to be about 200m.

For the study of the biological effects of ELF (Extremely Low Frequency) electric fields, the perception mechanism of ELF electric fields was analyzed. When a human body is exposed to an electric field, the hair on the body surface moves due to the electric force exerted on the hair. In theoretical analysis, it was shown that the force is approximately proportional to the dielectric constant of hair and the spatial gradient of the square of the electric field at the hair. The dielectric constant of hair was measured with different temperatures and humidities of the surrounding air. A technique was developed to estimate the electric force exerted on a hair during the field exposure. After experiments with model hair, the technique was applied to a body hair of a living human being. It was found that the force increased with field strength and relative humidity. The variations of the force agreed well with those expected from the theoretical analysis and the measurement of hair dielectric constants. These results explain the cause of the reported variation in the threshold of biological effects of an electric field. The results will help to establish a practical safety standard for the held exposure.

A pseudoinverse rule, one of major rule to determine a weight matrix for associative memory, has large capacity comparing with other determining rules. However, it is wellknown that the rule has small domains of attraction of memory vectors on account of many spurious states. In this paper, we try to improve the problem by means of subtracting a constant from all diagonal elements of a weight matrix. By this method, many spurious states disappear and eigenvectors with negative eigenvalues are introduced for the orthocomplement of the subspace spanned by memory vectors. This method can be applied to two types of networks: binary network and analog network. Some computer simulations are performed for both two models. The results of the simulations show our improvement is effective to extend error correcting ability for both networks.

This paper presents an analysis of the dose rate in tissue irradiated by an electromagnetic near field of a circular loop antenna. An analytical model comprised of a circular loop antenna located in the vicinity of the semi-infinite plane of a homogeneous biological medium was formulated. A quasi-static hypothesis was not introduced. The theoretical formulation was rigorously developed based on Maxwell equations which used an electric vector potential, cylindrical coordinates and a Hankel transform. The internal electric field E and the specific absorption rate (SAR) were adopted as indices for the dose in the tissue. This formulation was applied to the dosimetry of a high-frequency therapeutic device (HFTD) and experiment of irradiation to a frog web. The frequency of the applied electro-magnetic fields (EMF) was 9-10MHz. The distance between the antenna and tissue was 2.0-3.2mm. The dose of HFTD were 0.75V/m and 0.35mW/kg, respectively. The dose of experiment of the irradiation to a frog web were 0.42-2.08V/m and 0.11-2.69mW/kg, respectively. The SAR values obtained by this analysis were small enough to conclude that the effects were non-thermal. The calculated SARs of these experiments were compared with estimated SARs in experiments on calcium efflux change due to a weak modulated RF field. All were found to be of the same order of magnitude.

The studies on the biological effects of ELF electric fields conducted in Japan are reviewed. Among international studies, they are characterized as the studies from the viewpoint of bioengineering. In early studies, the safety standard of high voltage transmission lines was determined by a distinct biological effect, i.e., the sensation of the spark discharge caused by electrostatic induction. In numerical analysis, the field coupling to both animal and human bodies became well understood. Some new measurement techniques were developed which enabled us to evaluate the field exposure on a human body. A system was developed to realize the chronic exposure of an electric field on mice and cats. An optical telemetry technique was developed to measure the physiological response of an animal when it was exposed to an electric field. An ion-current shuttle box was developed to investigate the behavioral change of a rat when it was exposed to an ion-current as well as an electric field. In animal experiments, a mechanism of sensing the field was investigated. The cause of the seasonal change of field sensitivity was found. In cases of chronic exposure, suppression of growth was suspected. In shuttle box studies, an avoidance behavior from an ion-current was quantified. To find whether there are any adverse or beneficial effects of the field exposure on human beings, further study is required to clarify the mechanisms of the biological effects.

This paper describes a 32-bit fully asynchronous microprocessor, with 4-stage pipeline based on a RISC-like architecture. Issues relevant to the processor such as design of self-timed datapath, asynchronous controller and interconnection circuits are discussed. Simulation results are included using parameters extracted from layout, which showed about the 300 MIPS processing speed and used 71,000 transistors with 0.5 µm CMOS technology.

This article deals with the binary neural network with negative self-feedback connections as a method for solving combinational optimization problems. Although the binary neural network has a high convergence speed, it hardly searches out the optimum solution, because the neuron is selected randomly at each state update. In thie article, an improvement using the negative self-feedback is proposed. First it is shown that the negative self-feedback can make some local minimums be unstable. Second a selection rule is proposed and its property is analyzed in detail. In the binary neural network with negative self-feedback, this selection rule is effective to escape a local minimum. In order to comfirm the effectiveness of this selection rule, some computer simulations are carried out for the N-Queens problem. For N=256, the network is not caught in any local minimum and provides the optimum solution within 2654 steps (about 10 minutes).

In this paper, I investigate a property of self-organizing feature map (SOFM) in terms of reference vector density q(x) when probability density function of input signal fed into SOFM is p(x). Difficulty of general analysis on this property is briefly discussed. Then, I employ an assumption (conformal map assumption) to evaluate this property, and it is shown that for equilibrium state, q(x)p(x)s holds. By giving Lyapunov functioin for time evolution of reference vector density q(x) in SOFM, the equilibrium state is proved to be stable in terms of distribution. Comparison of the result with one which is based on different assumption reveals that there is no unique result of a simple form, such as conjectured by Kohonen. However, as there are cases in which these assumptions hold, these results suggest that we can consider a range of the property of SOFM. On the basis of it, we make comparison on this property between SOFM and fundamental adaptive vector quantization algorithm, in terms of the exponent s of the relation q(x)p(x)s. Difference on this property between SOFM and fundamental adaptive vector quantization algorithm, and propriety of mean squared quantization error for a performance measure of SOFM, are discussed.

A 0.25-µm BiCMOS technology has been developed using three sophisticated technologies; the HSST/BiCMOS device, synchrotron orbital radiation (SOR) X-ray lithography, and an advanced two-level metallization. The HSST/BiCMOS provides a 25.4-ps double-poly bipolar device using High-performance Super Self-Aligned Process Technology (HSST), and a 42 ps/2 V CMOS inverter. SOR lithography allows a 0.18 µm gate and 0.2 µm via-hole patternings by using single-level resists. The metallization process features a new planarization technique of the 0.3-µm first wire, and a selective CVD aluminum plug for a 0.25 µm via-hole with contact resistance lower than 1Ω. These 0.25-µm technologies are used to successfully fabricate a 4 KG 0.25 µm CMOS gate-array LSI on a BiCMOS test chip of 12 mm square, which operates at 58 ps/G at 2 V. This result demonstrates that SOR lithography will pave the way for the fabrication of sub-0.25-µm BiCMOS ULSIs.

A new mobility model dependent upon electron concentration is presented for studying the screening effect on ionized impurity scattering. By coupling this model with the drift-diffusion and Hartree models, the effects of self-consistent and quasi-equilibrium screening on carrier transport in heavily doped systems are revealed for first time. The transport mechanism is found to be dominated by the electron-concentration-dependent mobility, and transconductance is shown to be determined by effective mobility and changes from degraded to enhanced characteristics with electron concentration modulation.

The Synchronous Optical Network (SONET) technology offers technical possibilities to build high speed transport networks and enables the operator to react quickly to the customers' capacity requirements. Furthermore the advanced SONET equipment, with standardized control and operation features, provides opportunities for new services, such as broadband services, and cost-effective ways to enhance existing services, such as network survivability improvement. But SONET technology can also create a certain degree of complexity in building cost-efficient network, especially in case of SONET Self-Healing Ring (SHR). It is a challenge for network planner to find an effective way to select the most economical SONET ring, or combination of rings, for given demands between a set of nodes that are supposed to be connected in a certain type of ring configuration. Three types of ring are standard today: path unidirectional, 2-fiber line protection bidirectional and 4-fiber line protection bidirectional. For a given network, the choosing of ring architecture based on economical considerations involves two major factors. They are capacity requirement and equipment cost. Capacity requirements of different SONET ring architectures depend upon different conditions. While facility line rate, which is a key factor in deciding what kind self-healing ring can be deployed economically on these requirements. Routing decisions play a key role in deciding the ring capacities required, especially for bidirectional rings. In the paper, we will make the economic study on how SONET SHR architecture works out with a variety of demand patterns, to find criteria for ring selection. We first present two efficient demand loading algorithms for BSHR capacity calculation, and then analyze the results from their application on a variety of demand patterns. The economic study for SONET SHR networks based on different architectures are also discussed.

Impact ionization () in two n+-n--n+ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy () of only those high energy electrons contributing to is an appropriate variable for the modeling of . A transport model allowing one to calculate is derived from the Boltzmann transport equation (BTE) and calibrated by the SCMC simulation results. The values of and the coefficient, αii, predicted by the proposed model are in good agreement with the Monte-Carlo data.

This paper discusses the design of an ITS to realize a load-oriented tutoring to enhance the student's explanation understanding. In the explanation understanding, it is to be hoped that a student not only memorizes the new information from an explanation, but also relates the acquired information with his/her own knowledge to recognize what it means. This relating process can be viewed as the one in which the student structures his/her knowledge with the explanation. In our ITS, we regard the knowledge-structuring activities as the explanation understanding. In this paper, we propose an explanation, called a load-oriented explanation, with the intention of applying a load to the student's knowledge-structuring activities purposefully. If the proper load is applied, the explanation can induce the student to think by himself/herself. Therefore he/she will have a chance of gaining the deeper understanding. The important point toward the load-oriented explanation generation is to control the load heaviness appropriately, which a student will bear in understanding the explanation. This requires to estimate how an explanation promotes the understanding activities and how much the load is applied to the activities. In order to provide ITS with the estimation, we have built an Explanation Effect Model, EEM for short. Our ITS consists of an explanation planner and a self-explanation environment. The planner generates the load-oriented explanation based on EEM. The system also makes a student explain the explanation understanding process to himself/herself. Such self-explanation is useful to let the student be conscious of the necessity of structuring his/her knowledge with the explanation. The self-explanation environment supports the student's self-explanation. Furthermore, if the student reaches an impasse in self-explaining, the planner can generate the supporting explanation for the impasse.