This paper discusses a CMOS differential-difference amplifier circuit suitable for low voltage operation. A new multiple weighted input transconductor circuit structure is suggested to be use in DDA implementation. The proposed DDA can be employed in several analog/digital systems to improve their parameters. Selected examples of the proposed transconductor/DDA applications are also discussed.

We present a design chart and a manufacturing process for mm-wave absorber consisting of two spacers (poly-carbonate) and two-resistive sheets (polyethylene terephthalate deposited with Indium Tin Oxide). The conventional design chart gives us necessary information to make a desirable absorber. Based on the design chart, a multi-layered type absorber was manufactured and it is concluded that a significant absorption level (-20dB) is attained at a wide-frequency range of 46-66GHz.

Electromagnetic environments generated by power transmission system, possibilities of the interference and its mitigation method was introduced. In the frequency region below 10kHz, concern for DC and AC electric and magnetic field are described. In the frequency range above 10kHz, concern for discharges on power apparatus, electromagnetic emvironments generated by carrier system and fault locating system and passive interference are described. Electromagnetic environment caused by load equipments, that is harmonics, and undesirable electromagnetic emission from power converting units are described finally.

The polarization dependence of femtosecond soliton-soliton interactions is investigated in detail. When the polarization direction of two solitons is orthogonal, the soliton interaction can be reduced in comparison to that for parallel polarization. The soliton self-frequency shift (SSFS) is still observed even in the orthogonal condition, but the quantity of the SSFS is much smaller than in the parallel condition. A stronger soliton interaction is observed between two solitons in an in-phase condition, than in an out-of-phase condition. The largest SSFS occurs in-phase with parallel polarization. The polarization dependence of femtosecond soliton interaction in a distributed erbium-doped fiber amplifier (DEDFA) is also investigated. It is shown that when the optical gain of the DEDFA is given adiabatically, the input pulse separation at which the first soliton occurs is less with orthogonal polarization. This is because the soliton pulse width is reduced due to the adiabatic soliton narrowing caused by the optical amplification.

This paper presents a new sort of multilayer piezoelectric ceramic transformer for switching regulated power supplies. This piezoelectric transformer operates in the second thickness extensional vibration mode. Its resonant frequency is higher than 1 MHz. First, numerical simulation was implemented using a distributed constant electromechanical equivalent circuit method. It was calculated that this piezoelectric transformer, which has higher than 200 mechanical quality factor Qm, could work with higher than 90% efficiency and in more than 20-W/cm3 high power density. Second, a trially fabricated transformer, which is 15 mm long, 15 mm wide and 2.2 mm thick, was examined. Modified PbTiO3 family ceramics were used for the piezoelectric transformer material, because of the large anisotropy between electromechanical coupling factors kt and kp. Obtained results indicate that the piezoelectric transformer has good resonant characteristics, with little spurious vibration, and exhibits 16-W/cm3 power density with high efficiency at 2 MHz. Moreover, a switching regulated power supply, applying the piezoelectric ceramic transformer, was built and examined.

OFDM (Orthogonal Frequency Division Multiplexing) is a useful digital modulation method for terrestrial digital broadcasting systems, both for digital TV broadcasting and digital audio broadcasting. OFDM is a kind of multicarrier modulation and shows excellent performance especially in multipath environments and in mobile reception. Other advantages are its resistance to interference signals and its suitability for digital signal processing. When each carrier of the OFDM signal is modulated with DQPSK, we call it DQPSK-OFDM. DQPSK-OFDM is a basic OFDM system, which is especially suitable for mobile reception. This paper describes how a DQPSK-OFDM system works and shows several experimental and simulation results. The experimental results mainly concern the performance of the DQPSK-OFDM system relative to various disturbances such as multipath (ghost) signals, nonlinearity of the channel, and interference from analog signals. The transmission characteristics of DQPSK-OFDM are investigated and the basic criteria for the system design of DQPSK-OFDM are discussed.

A programmable clock generator, based on a phase-locked loop (PLL) circuit, has been developed with 0.5 µm CMOS triple-layer Al interconnection technology for use as an on-chip clock generator in a 300-MHz video signal processor. The PLL-based clock generator generates a clock signal whose frequency ranges from 50 to 350 MHz which is an integral multiple, from 2 to 16, of an external clock frequency. In order to achieve stable operation within this wide range, a voltage controlled oscillator (VCO) with selectable low VCO gain characteristics has been developed. Experimental results show that the clock generator generates a 297-MHz clock with a 27-MHz external clock, with jitter of 180 ps and power dissipation of 120 mW at 3.3-V power supply, and it can also oscillate up to 348 MHz with a 31.7-MHz external clock.

A 3.2 GHz, 50 mW, 1 V, GaAs clock pulse generator (CG) based on a phase-locked loop (PLL) circuit has been designed for use as an on-chip clock generator in future high speed processor LSIs. 0.5 µm GaAs MESFET and DCFL circuit technologies have been used for the CG, which consists of 224 MESFETs. An "enhanced charge-up current" inverter has been specially designed for a low power and high speed voltage controlled oscillator (VCO). In this new inverter, a voltage controlled dMESFET is combined in parallel with the load dMESFET of a conventional DCFL inverter. This voltage controlled dMESFET produces an additional charge-up current resulting in the new VCO obtaining a much higher oscillation frequency than that of a ring oscillator produced with a conventional inverter. With a single 1 V power supply (Vdd), SPICE calculation results showed that the VCO tuning range was 2.25 GHz to 3.65 GHz and that the average VCO gain was approximately 1.4 GHz/V in the range of a control voltage (Vc) from 0 to 1 V. Simulation also indicated that at a Vdd of 1 V the CG locked on a 50 MHz external clock and generated a 3.2 GHz internal clock (=50 MHz64). The jitter and power dissipation of the CG at 3.2 GHz oscillation and a Vdd of 1 V were less than 8.75 psec and 50 mW, respectively. The typical lock range was 2.90 GHz to 3.59 GHz which corresponded to a pull-in range of 45.3 MHz to 56.2 MHz.

This paper discusses pulse responses of multi-conductor transmission lines terminated by linear and nonlinear subnetworks. At first step, the circuit is partitioned into a linear transmission lines and nonlinear subnetworks by the substitution voltage sources. Then, the linear subnetworks are solved by a well-known phasor technique, and the nonlinear subnetworks by a numerical integration technique. The variational value at each iteration is calculated by a frequency domain relaxation method to the associated linearized time-invariant sensitivity circuit. Although the algorithm can be efficiently applied to weakly nonlinear circuits, the convergence ratio for stiff nonlinear circuits becomes very small. Hence, we recommend to introduce a compensation element which plays very important role to weaken the nonlinearity. Thus, our algorithm is very simple and can be efficiently applied to wide classes of nonlinear circuits.

We propose and demonstrate an excellent linearly frequency-swept laser diode (LD) for sensing system utilizing frequency-moduleted continuous-wave (FMCW) technique. In order to linearly sweep the optical frequency, we adopt a reference interferometer and an electric phase comparator. The interference beat signal of the reference interferometer is phase-compared with an external reference rectangular signal having a fixed frequency near the interference beat signal frequency by a lock-in amplifier. The error signal from the lock-in amplifier is fed back to the modulating signal of the injection current of the LD. Thus, a phase-locked loop composed of optical and electric circuits can be established, and the beat signal frequency is locked to the frequency of the reference signal. The optical frequency of the LD is, therefore, excellently linearly swept in time. In order to experimentally confirm the linearlity of the proposed method, we apply this light source to the FMCW reflectometry. Resultingly, the improvement of the linearity is estimated to be about 10 dB. And the theoretically limited spatial resolution of the FMCW reflectometry is achieved.

In this paper, we subjects the case that frequency–shift–keying (FSK) modulation and phase locked loop (PLL) demodulator are used in frequency hopped spread spectrum (FH–SS) communication system. So the carrier frequencies of undesired transmitters may come into collision with the carrier frequency of desired transmitter in this communication system, we evaluate the response of PLL by two sinusoidal inputs so as to estimate how the response of PLL demodulator is affected by the collision of carrier frequencies. First, we compute the synchronization diagrams of PLL with two sinusoids. From this, it is indicated that allowable value of amplitude ratio of interference transmitter's signal to disired transmitter's signal decreases with increasing FSK modulation width of desired transmitter. Next, we calculated the output of PLL demodulator with two sinusoids. To this end, it is shown that the allowable value of amplitude ratio is bounded by a constant value even if FSK modulation width is enough small.

We report the development of high-performance small-scale AlGaAs/GaAs collector-up heterojunction bipolar transistors (C-up HBT) with a carbon (C)-doped base layer. Oxygen-ion (O+) implantation is used to define their intrinsic emitter/base junctions and zinc (Zn)-diffusion is used to lower the resistivity of their O+-implanted extrinsic base layers. The highly resistive O+-implanted AlGaAs layer in the extrinsic emitter region sufficiently suppresses electron injection even under high-forward-bias conditions, allowing high collector current densities. The use of a C-doped base is especially effective for small-scale C-up HBT's because it suppresses the undesirable turn-on voltage shift caused by base dopant diffusion in the intrinsic area around the collector-mesa perimeter that occurs during the high-temperature Zn-diffusion process after implantation. Even in a small-scale trasistor with a 2 µm2 µm collector, a current gain of 15 is obtained. A microwave transistor with a 2 µm10 µm collector has a cutoff frequency fT of 68 GHz and a maximum oscillation frequency fmax of 102 GHz. A small-scale C-up HBT with a 2 µm2 µm collector shows a higher fmax of 110 GHz due to reduced base/collector capacitance CBC and its fmax remains above 100 GHz, even at a low collector current of 1 mA. The CBC of this device is estimated to be as low as 2.2 fF. Current gain dependence on collector size is also investigated for C-up HBT's and it is found that the base recombination current around the collector-mesa perimeter reduces the current gain.

The magnitude of low frequency noise is studied in a Nb-(nanoconstrictions)-NbN system with adjustable current-voltage characteristics. We find that the magnitude of low frequency noise decreases sharply with increasing the subgap conductivity of the device. We suggest a qualitative explanation of this observation in terms of gradual build up of the nanoconstriction region by field assisted growth. The decrease of low frequency noise is related to the "cleanliness" of the system as measured by the amount of Andreev reflection-related conductivity. The scaling of the magnitude of low frequency noise with device resistance is also discussed.

This paper reports on the properties of thin-film thermal switches that are monolithically fabricated on high-Tc superconductive filter. Operating at a wide temperature range of 50-77 K, it was found that the switch could control the center frequency by -10 MHz with an increased insertion loss of less than 0.7 dB. In an on-off switching operation of filter characteristics using thin-film switches, power consumption was approximately 20 mW at 77 K, and the signal decay time as a switching speed was 30 ms at 76 K with a switch current of 70 mA. The decay time decreased exponentially as the switch current or the temperature setting increased.

In this paper, the Pisarenko and the Constrained Yule-Walker (CYW) estimators of a tone frequency are first newly derived from the viewpoint of using directly the autocorrelation coefficients. Then, simulation of these two estimators is carried out in some detail. The simulation results show that compared with the Pisarenko estimator the CYW estimator, which has not been adequately studied, works poorly for low and moderate Signal-to-Noise Ratio (SNR) values. However, in case of high SNR value, it yields very small bias and comparable estimation variance, and thus produces more accurate tone frequency estimates.

A new frequency hopped spread spectrum system is introduced. The frequency hopped signal is a combination of multi frequency and multi phase signals and is referred to as Frequency Hopped/Joint Frequency-Phase Modulation (FH/JFPM). A noncoherent receiver for the FH/JFPM signals is introduced and an exact expression for the bit error rate is obtained. A performance analysis of this system is given in the presence of broadband and partial-band noise jamming. The optimal jamming strategy is evaluated. The results show that under these jamming conditions the FH/JFPM perform better than the FH/M-ary DPSK and FH/M-ary FSK systems. It is also shown that for a given channel bandwidth and data rate, the FH/JFPM system has more processing gain than its FSK or DPSK counterparts.

This paper examines the retransmission probability and throughput characteristics of slow-frequency-hopping spread spectrum transmission in Rayleigh fading indoor channels of multi-cell environments. Because signal strength in a Rayleigh fading indoor channel changes slowly, retransmission probability is little influenced by the retransmission unit length and error correction capability when retransmission unit length is shorter than the fading period. With the 83.5MHz bandwidth of the 2.4GHz ISM (Industrial, Scientific, and Medical) band in the USA, quaternary phase shift keying (QPSK) is expected to provide a throughput of nearly 1Mbps in each cell when we assume a shadowing margin of 18.1dB and we use 4 cells, 100 hopping frequencies, a transmission power of 600mW, and a transmission distance of 20m. And also with the 26MHz bandwidth of the 2.4GHz ISM band in Japan, QPSK is expected to provide a throughput of nearly 1Mbps in each cell under similar conditions but with 26 hopping frequencies and a transmission power of 260mW.

An estimation method for efficiently calculating the field intensity in the Fresnel region of broadside colinear array antennas is developed, and its performance is experimentally verified. The calculation utilizes only the antenna design data, and is readily applicable to arbitrary array antennas. This method can provide a safety protection zone in the proximity of array antennas, in order to protect radio communication personnel and general public from the potentially hazardous radiofrequency exposure.

This paper describes a nondestructive measurement method for complex permittivity of dielectric material at pseudo microwave frequencies. The resonator used in this study has a cylindrical cavity filled with a sapphire material of a well known complex permittivity. The resonator is divided into two parts at the center. A dielectric substrate specimen is clamped with these halves. Relative permittivity εand loss tangent tan δ of the specimen are obtained at 3 GHz using the TE011 resonance mode. The accuracy of the present method is evaluated through the comparison of the measured values by the new method with those at around 10 GHz by the conventional empty cavity resonator method. The errors of measurements are smaller than 1% and 1105 for εand tan δ, respectively.

An improvement of Q evaluation is discussed. The Resonance Curve Area method was confirmed to give a deviation in the order of 6104. The result was three times more accurate than the widely known Q evaluating method which utilizes the cursor function installed in a network analyzer. A discussion is also made on the physical validity of the RCA method. It is shown that the application of the RCA method improves the accuracy of the cavity perturbation method. Actual measurements have shown that the deviation of dielectric constant is less than 1% and that of the loss tangent is less than 3%, in the order of 104. The accuracy of the RCA method was estimated to be three times that of the conventional cavity perturbation technique. The consistency of the perturbation with other methods has also confirmed. The accuracy comparison to more accurate formulae derived from a rigorous solution have shown that the difference is sufficiently small.