We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

This paper focuses on the fatigue characteristics of the single crystal silicon (SC-Si) cantilever in relation with the critical design of micro electro-mechanical systems (MEMS). Development of MEMS actuators for optical communication usage is carried out successfully, for example, in optical switches and variable optical attenuators (VOA). In those devices, fatigue characteristics of the MEMS structure are crucial to its practical application. However, fatigue tests using real structures have not been carried out well. In this research, the fatigue life has been inspected at the actual device, under actual usage conditions for the first time. We obtained fracture rate λ from experimental results, and the value of Failure in Time (FIT) λ was about 0.3 FIT. This result indicates that these MEMS devices having enough reliability for practical usage.

We demonstrated the transmission over 80 km at 10 Gb/s by using the amplifier and electroabsorption-modulator integrated laser diode. Tilt-facet antireflection window is implemented, inside of which a monitor photodiode is monolithically integrated for accurate power regulation. To better control the amplifier-input power and to reduce the feedback of the amplified spontaneous emission, an attenuator is incorporated by means of the inner-window. By amplifying the modulated signal and compensating modulator-chirp by gain-saturation in the amplifier, high power optical transmission is achieved from a device with -10 dB attenuation at total laser and amplifier currents of 200 mA.

For wavelength conversion based on cross-gain modulation (XGM) and cross-phase modulation (XPM) in semiconductor optical amplifiers (SOAs), a CW assist light is quite effective for acceleration of carrier recovery and reduction of pattern effects. We theoretically study assist light conditions both for XGM- and XPM-based wavelength conversion by numerically simulating eye-diagrams. Taking into account the spatial and temporal variations of carrier density along the SOA length, we successfully clarify the dependences of wavelength, power, and propagation direction of the assist light, and reveal the principal difference of response characteristics between XGM and XPM depending on carrier modulation.

We have developed separation by bonding Si islands (SBSI) process for advanced CMOS LSI applications. In this process, the Si islands that become the SOI regions are formed by selective etching of the SiGe layer in the Si/SiGe stacked layers, and those are bonded to the Si substrate with the thermal oxide layers by furnace annealing. The etching selectivity for SiGe/Si and surface roughness after the SiGe etching were found to be improved by decreasing the HNO3 concentration in the etching solution. The thicknesses of the fabricated Si island and the buried oxide layer also became uniform by decreasing the HNO3 concentration. In addition, it was found that the space formed by SiGe etching in the Si/SiGe stacked layers was able to be filled with the thermal oxide layer without furnace annealing.

We have fabricated Al-gate MOS capacitors with a Si quantum-dots (Si-QDs) floating gate, the number of dots was changed in the range of 1.6-4.81011 cm-2 in areal density with repeating the formation of Si dots and their surface oxidation a couple of times. The capacitance-voltage (C-V) characteristics of Si-QDs floating gate MOS capacitors on p-Si(100) confirm that, with increasing number of dots density, the flat-band voltage shift due to electron charging in Si-QDs is increased and the accumulation capacitance is decreased. Also, in the negative bias region beyond the flat-band condition, the voltage shift in the C-V curves due to the emission of valence electrons from intrinsic Si-QDs was observed with no hysterisis presumably because holes generated in Si-QDs can smoothly recombine with electrons tunneling through the 2.8 nm-thick bottom SiO2. In addition, we have demonstrated the charge retention characteristic improves in the Si-QDs stacked structure.

Large-capacity photonic packet switch using the wavelength division multiplexing (WDM) technology is proposed. In this switch, the optical buffers, consisting of the fiber delay lines, are shared in many input ports by using the WDM. Furthermore, to reduce the number of optical buffers, the speed-up effect in the optical switch part is investigated. A high-speed tunable optical filter incorporating a semiconductor ring resonator is a key device in the proposed packet switch because many optical filters are used. Optical ring resonators should be possible to fabricate them at a low cost because of their simple structure. To achieve a wide tuning range we designed a double-ring structure, in which two ring resonators are connected in series, and fabricated it using the InGaAsP-InP material system. This device exhibits a total free spectral range (FSR) of 1.7 THz and contrast ratio of 9.5 dB. The ring radii are 25.2 and 17.8 µm, which correspond to FSRs of 340 and 425 GHz, respectively. The switching time of the device is 2.5 ns.

This paper presents 160-Gbit/s full channel time-division demultiplexing using a semiconductor optical amplifier hybrid integrated demultiplexer on a planer lightwave circuit. Error-free demultiplexing from a 160-Gbit/s signal to 8 channel 20 Gbit/s signals is successfully demonstrated. Results of a 160-Gbit/s optical time-division-multiplexed full channel OTDM signal transmission experiment using the circuit and successful 80-km transmission are presented.

The comparative analysis of the well known Double Drift Region (DDR) IMPATT diode structure and the n+pvnp+ structure for the avalanche diode has been realized on the basis of the drift-diffusion nonlinear model. The last type of the diode was named as Double Avalanche Region (DAR) IMPATT diode. This structure includes two avalanche regions inside the diode. The phase delay which was produced by means of the two avalanche zones and the drift zone v is sufficient for the negative resistance obtained for the wide frequency region. The numerical model that is used for the analysis of the various diode structures includes all principal features of the physical phenomena inside the semiconductor structure. The admittance characteristics of both types of the diodes were analyzed in very wide frequency region.

This paper presents a VLSI design methodology for the MAC-level DWT/IDWT processor based on a novel limited-resource scheduling algorithm. The r-split Fully-specified Signal Flow Graph (FSFG) of limited-resource FIR filtering has been developed for the scheduling of the MAC-level DWT/IDWT signal processing. Given a set of architecture constraints and DWT parameters, the scheduling algorithm can generate four scheduling matrices that drive the data path to perform the DWT computation. Because the memory for the inter-octave is considered with the register of FIR filter, the memory size is less than the traditional architecture. Besides, based on the limited-resource scheduling algorithm, an automated DWT processor synthesizer has been developed and generates constrained DWT processors in the form of silicon intelligent property (SIP). The DWT SIP can be embedded into a SOC or mapped to program codes for commercial off-the-shelf (COTS) DSP processors with programmable devices. As a result, it has been successfully proven that a variety of DWT SIPs can be efficiently realized by tuning the parameters and applied for signal processing applications.

Next generation advanced power devices show remarkable progress in wide band-gap power devices such as silicon carbide and gallium nitride devices, as well as novel silicon devices called as super junction FETs and so on. The future direction of power electronics applications is surveyed in terms of output power density as an index of future power electronics development, instead of the power conversion efficiency, taking the device progress in sight. Over the last 30 years, the output power density of power electronics apparatuses has increased by a factor of two figures. New markets, such as a power supply for future generation CPU, a compact unit inverter and a electric vehicle-driving inverter unit, are expected to grow rapidly from 2010 to 2015 with the advance in the out power density of power converter. The possibility of power electronics innovation with progress in the output power density will be discussed in conjunction with development of next generation advanced power devices and related technologies.

Ultrafast all-optical switching was experimentally demonstrated using four-wave mixing in an SOA. Two pump pulses with different wavelengths and timings were used for 12 switching. The cross-correlation measurements of FWM signals using a short reference pulse show the high-speed switching capability for wavelength routing in OTDM networks.

Bluetooth is a system for providing short-range, small size, low-power and low-cost connectivity operating in the ISM (Industrial Scientific Medicine) band at 2.4 GHz. Bluetooth has been seen as a promising candidate for ad-hoc wireless networking and wireless personal area network (WPAN). In this paper, we first discuss previously proposed polling algorithms in Bluetooth piconet. We then propose an efficient fair scheduling algorithm which improves the throughput efficiency of the system by adaptively assigning the polling interval according to the number of inactive slaves. We also show the simulation results of the proposed algorithm compared with previously proposed algorithms.

A multifunctional Boolean logic circuit composed of single-electron transistors (SETs) was fabricated and its operation demonstrated. The functions of Boolean logic can be changed by the half-period phase shift of the Coulomb-blockade (CB) oscillation of some SETs in the circuit, and an automatic control based on a feedback process is used to attain an exact shift. The amount of charges in the memory node (MN), which is capacitively coupled to the SET, controls the phase of the CB oscillation, and the output signal of the SET controls the amount of charge in the MN during the feedback process. This feedback process automatically adjusts SET output characteristics in such a way that it is used for the multifunctional Boolean logic. We experimentally demonstrated the automatic phase control and examined the speed of the feedback process by SPICE circuit simulation combined with a compact analytical SET model. The simulation revealed that programming time could be of the order of a few ten nanoseconds, thereby promising high-speed switching of the functions of the multifunctional Boolean logic circuit.

We have proposed and theoretically verified a 2R (reshaping and regeneration) limiter circuit using continuous wave (CW) holding beam for cross-gain modulation (XGM) wavelength converter, through simulation. The gain clamping effect of semiconductor optical amplifier (SOA), which is caused by CW holding beam injected into SOA, was used to obtain the accurate optical gain and phase conditions for SOA's in 2R limiter circuit. XGM wavelength converter with the proposed 2R limiter circuit provides higher extinction ratio (ER) as well as more enhanced operation speed than any other wavelength converter. Our numerical results show that after the wavelength-converted signal from XGM wavelength converter passed the 2R limiter circuit, it was re-inverted with the improved ER of 30 dB at 5 Gb/s. In case of high-speed operation, great enhancement to decrease power penalty of about 12 dB was shown at 10 Gb/s.

In future high-speed networks, provision of diverse multimedia services with strict quality-of-service (QoS) requirements, such as bandwidth, delay and so on, is desired. QoS routing is a possible solution to handle these services. Generally, a path selection for QoS routing is formulated as a shortest path problem subject to multiple constraints. However, it is known to be NP-complete when more than one QoS constraint is imposed. As a result, many heuristic algorithms have been proposed so far. The authors proposed a path selection algorithm Fallback+ for QoS routing, which focuses not only on the path selection with multiple constraints but also on the efficient use of network resources. This paper proposes an enhanced version of Fallback+, named Enhanced Fallback+, where in a shrewd way, it keeps tentative paths produced in the conventional Fallback algorithm with Dijkstra's algorithm. Simulation experiments prove the excellent performance of Enhanced Fallback+, compared with the original Fallback+ and other existing path selection algorithms.

Intensity-noise characteristics of stable multi-mode Fabry-Perot semiconductor lasers are analyzed experimentally and theoretically. Mode-partition noise caused by optical filtering and propagation through optical fibers is investigated by evaluating the relative intensity noise and signal-to-noise ratio. The experimental results indicate that the simplified two-mode analysis provides a good approximation. Suppression of the mode-partition noise by nonlinear gain is experimentally confirmed.

We describe the characteristics of all-optical switching schemes based on semiconductor optical amplifiers (SOAs), with particular emphasis on the role of the fast carrier dynamics. The SOA response to a single short pulse as well as to a data-modulated pulse train is investigated and the properties of schemes relying on cross-gain as well as cross-phase modulation are discussed. The possible benefits of using SOAs with quantum dot active regions are theoretically analyzed. The bandfilling characteristics and the presence of fast capture processes may allow to reach bitrates in excess of 100 Gb/s even for simple cross-gain modulation schemes.

All optical regenerations or wavelength conversions using SOA-based polarization discriminated switch injected by an assist light were investigated. First of all, cross gain modulation (XGM) and cross phase modulation (XPM) in a SOA injected by an external assist light were quantitatively analyzed. A simple measurement technique of XGM and XPM was shown to confirm that the injection of assist light could reduce a gain recovery time with some sacrifice for XGM and XPM efficiency. All-optical 3R regeneration using two-stage SOA-based polarization discriminated switch at 40 Gbit/s and its tolerances for some degradation against intensity deviation and optical signal-to-noise ratio (OSNR) were also shown. Finally, regeneration capability was evaluated through a dispersion shifted fiber (DSF)-based re-circulating loop transmission experiment. Those results indicate that the SOA-based polarization discriminated switch is a promising candidate for all-optical regenerator from the practical point of view.

Symmetric Mach-Zehnder (SMZ) type all-optical swit-ches are discussed. The SMZ type all-optical switches feature the so-called differential phase modulation scheme to achieve a speed unrestricted by efficient, thus usually slow nonlinearities. In these switches, semiconductor optical amplifiers (SOAs) are often used to realize low optical power switching. We discussed SOAs from a view point of all-optical switch applications, rather than amplifier applications. Finally, all-optical signal processing experiments are discussed with the SMZ type all-optical switches. These include ultrafast demultiplexing of 336 Gb/s signal pulses and random operations at 42 Gb/s for all-optical logic operation and wavelength conversion.