A novel CMOS LC quadrature oscillator (QO) which adopts complementary-coupling circuitry has been proposed. The performance improvement in I/Q phase error and phase noise of the proposed QO, is explained in comparison with conventional QOs. The proposed QO is implemented in 0.18 µm CMOS technology along with conventional QOs. The measurement result of the proposed QO shows -133.5 dBc/Hz of phase noise at 1 MHz offset and 0.6 I/Q phase difference, while oscillating at 1.77 GHz. The proposed QO shows more than 6.5 dB phase noise improvement compared to that of the conventional QOs over the offset frequency range of 10 K-1 MHz, while dissipating 4 mA from 1.4 V supply.

A silicon lateral photodiode is fabricated by standard 0.18 µm CMOS process, and the optical detection property is characterized. The photodiode has interdigital electrode structure with the electrode width of 0.22 µm and the electrode spacing of 0.6 µm. At 830 nm wavelength, the responsivity is 0.12 A/W at low bias voltage, and is increased to 0.6 A/W due to avalanche amplification. The bandwidth is also enhanced from 12 MHz at low bias voltage to 100 MHz at the bias voltage close to the breakdown voltage.

In deep-submicron technologies, process variations can significantly affect the performance and yield of VLSI chips. As a countermeasure to the variations, post-silicon tuning has been proposed. Deskew, where the clock timing of flip-flops (FFs) is tuned by inserted programmable delay elements (PDEs) into the clock tree, is classified into this method. We propose a novel deskew method that decides the delay values of the elements by measuring a small amount of FFs' clock timing and presuming the rest of FFs' clock timings based on a statistical model. In addition, our proposed method can determine the discrete PDE delay value because the rewriting constraint satisfies the condition of total unimodularity.

Characteristics of conductive elastomer that is composed of silicone rubber and dispersed carbon black particles show conductive and elastic properties in one simple material. This material has been widely applied to make-break contacts of panel switches and connectors of liquid crystal panels. However, since surface state of the contact is very soft, it is difficult to remove contaminant films of contaminated opposite side contact surface and to obtain low contact resistance owing to break the film. This is an important problem to be solved not only for the application of make-break switching contact but also static connector contacts. This study has been conducted to examine some complex structures of the elastomer which indicate removal characteristics for contaminant films and low contact resistance. As specimens, six different types of elastomer contacts composed of different type of dispersed materials as carbon and metal fibers, metal mesh, and plated surfaces were used. The contacts of opposite side were Au and Sn plated contact surface on a printed circuit board (PCB) which is usually used in the static connector and make-break contacts. In order to contaminate contact surfaces of PCB, the surfaces were subjected to exposure in an SO2 gas environment. The elastomeric contacts contained hard materials showed lower contact resistance than only dispersed carbon particles in the elastomer matrix for both contaminated PCB contact surfaces.

With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.

This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.

We propose a new bidirectional gigabit mm-wave wavelength division multiplexed-radio over fiber link which shares the same wavelength. As the downlink, the central station transmits a 30 GHz single sideband wireless signal which is modulated 1.25 Gbps and also transmits a remote 32 GHz local oscillator for down-conversion of a uplink wireless signal by using a mach-zehnder modulator and a fiber bragg grating. As the uplink, the base station transmits a down-converted 1.25 Gbps wireless signal by using a reflective semiconductor optical amplifier. We achieve a BER < 10-9 in the downlink at -14.05 dBm and uplink at -12.5 dBm after 20 km transmission.

All-optical wavelength conversion and modulation format conversion will be needed in the next generation high-speed optical communication networks. We have proposed and successfully demonstrated the error free operation of all-optical modulation format conversion from NRZ-OOK to RZ-BPSK using SOA based MZI wavelength converter. In this paper, we experimentally investigate the wavelength conversion characteristics of the proposed NRZ-OOK/RZ-BPSK modulation format converter. The results show that error free modulation format conversion is possible over the entire C band.

With multiple overlapped piconets, the IEEE 802.15.3 Medium Access Control (MAC) protocol uses a Parent/Child (P/C) or Parent/Neighbor (P/N) configuration to avoid inter-piconet interference. However, the throughput of a P/N or P/C configuration cannot exceed that of a single piconet. In the present paper we propose an efficient means of managing multiple piconets to cooperate with a Multi-Carrier Code Division Multiple Access (MC-CDMA) based UWB system. The proposed management approach uses an Intermediate Device (IDEV) to connect Piconet Coordinators (PNCs). A senior PNC adaptively arranges two simultaneous data transmission links with the proposed spreading matrices in each Channel Time Allocation (CTA) instead of a P/C or P/N configuration, which supports only a single link in each CTA. Simulation results demonstrate the proposed scheme can achieve a higher throughput with an acceptable compromise of link success probability in multiple overlapped piconets.

Millimeter-waves integrated circuits offer a unique opportunity for a holistic design approach encompassing RF, analog, and digital, as well as radiation and electromagnetics. The ability to deal with the complete system covering a broad range from the digital circuitry to on-chip antennas and everything in between offers unparalleled opportunities for completely new architectures and topologies, which were previously impossible due the traditional partitioning of various blocks in conventional design. This can open a plethora of new architectural and system level innovation within the integrated circuit platform. This paper reviews some of the challenges and opportunities for mm-wave ICs and presents several solutions to them.

We have designed a superconductor-semiconductor hybrid analog-to-digital (A/D) converter and experimentally evaluated its performance at sampling frequencies up to 18.6 GHz. The A/D converter consists of a superconductor front-end circuit and a semiconductor back-end circuit. The front-end circuit includes a sigma-delta modulator and an interface circuit, which is for transmitting data signal to the semiconductor back-end circuit. The semiconductor back-end circuit performs decimation filtering. The design of the modulator was modified to reduce effects of integrator leak and thermal noise on signal-to-noise ratio (SNR). Using the improved modulator design, we achieved a bit-accuracy close to the ideal value. The hybrid architecture enabled us to reduce the integration scale of the front-end circuit to fewer than 500 junctions. This simplicity makes feasible a circuit based on a high TC superconductor as well as on a low TC superconductor. The experimental results show that the hybrid A/D converter operated perfectly and that SNR was 84.8 dB (bit accuracy~13.8 bit) at a band width of 9.1 MHz. This converter has the highest performance of all sigma-delta A/D converters.

In this review paper we showcase recent activities on silicon photonics science and technology research in Hong Kong regarding two important topical areas--microresonator devices and optical nonlinearities. Our work on silicon microresonator filters, switches and modulators have shown promise for the nascent development of on-chip optoelectronic signal processing systems, while our studies on optical nonlinearities have contributed to basic understanding of silicon-based optically-pumped light sources and helium-implanted detectors. Here, we review our various passive and electro-optic active microresonator devices including (i) cascaded microring resonator cross-connect filters, (ii) NRZ-to-PRZ data format converters using a microring resonator notch filter, (iii) GHz-speed carrier-injection-based microring resonator modulators and 0.5-GHz-speed carrier-injection-based microdisk resonator modulators, and (iv) electrically reconfigurable microring resonator add-drop filters and electro-optic logic switches using interferometric resonance control. On the nonlinear waveguide front, we review the main nonlinear optical effects in silicon, and show that even at fairly modest average powers two-photon absorption and the accompanied free-carrier linear absorption could lead to optical limiting and a dramatic reduction in the effective lengths of nonlinear devices.

This paper reviews recent world-wide progress in silicon-based photonics-and-optoelectronics in order to provide a context for the papers in this special section of the IEICE Transactions. The impact of present and potential applications is discussed.

The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.

We propose and demonstrate a simple one-bus two-ring configuration where the two rings are mutually coupled that has advantages over the one-ring structure. Unlike a one cavity system, it can exhibit near critically-coupled transmission with a broader range of loss. It can also significantly enhance the cavity finesse by simply making the second ring twice the size of the bus-coupled one, with the enhancement proportional to the intensity buildup in the second ring.

We describe the transmission characteristics of a wavelength independent wavelength division multiplexing passive optical network (WDM-PON) based on a wavelength channel data rewriter (WCDR). The WCDR is composed of a linear amplifier (LA) and a saturated semiconductor optical amplifier (SOA), and by using the WCDR in optical network units (ONUs), we can erase the downstream signal and modulate the same wavelength channel with the upstream signal. In this paper, we analyze the data rewriting characteristic, the frequency chirp characteristic and the bit error rate (BER) degradation occasioned by the use of saturated SOAs. Furthermore, we report high-speed transmission with power penalty of less than 1 dB at bit rates of 1.25 Gbit/s, 2.5 Gbit/s and 10 Gbit/s for downstream signals and 1.25 Gbit/s for upstream signals after transmission through 40 km of single-mode fiber.

We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparent property of the oxide TFT, the color filter and TFT array are positioned at the viewing side of the display. This novel "Front Drive" display structure facilitates the alignment of the color filter and TFT dramatically.

In this letter, the fabrication of a compact and high performance semi-lumped coplanar waveguide low-pass filter (CPW-LPF) on high resistivity silicon (HRS) substrate at millimeter wave is proposed. The design procedure and the equivalent circuit of the proposed semi-lumped CPW-LPF is discussed. The filter structure of is very simple but its performances is fairly good. This designed filter at cutoff frequency fc of 31 GHz has very good measured characteristics including the low insertion loss, sharp rejection and low group delay, due to the reduced substrate loss of HRS. Experimental results of the fabricated filter show a good agreement with the predicted results.

We propose a new label recognition system for photonic label switching using self-routing of labels. Binary-coded labels in on-off keying format are considered. The system consists of an all-optical demultiplexer (DeMUX) and an address recognition unit (ARU) consisting of tree-structured switches. The system uses self-routing propagation of an indication bit controlled with address bits. The indication bit is placed in advance of the address bits in the label. In DeMUX, all-optical switches in a configuration of Mach-Zehnder interferometer with semiconductor optical amplifiers (SOA-MZI) are controlled by the indication bit pulse to separate each of the label bits. The indication bit pulse is routed to the destination output port corresponding to the code of the address in ARU. It is shown that all the binary number codes can be recognized with this system. The operation principle is verified by numerical simulation using coupled-mode theory and a rate equation. Moreover, the switching crosstalk is also evaluated.

This paper describes a morpheme-based pronunciation model that is especially useful to develop the pronunciation lexicon for Large Vocabulary Continuous Speech Recognition (LVCSR) in Korean. To address pronunciation variation in Korean, we analyze phonological rules based on phonemic contexts together with morphological category and morpheme boundary information. Since the same phoneme sequences can be pronounced in different ways at across morpheme boundary, incorporating morphological environment is required to manipulate pronunciation variation modeling. We implement a rule-based pronunciation variants generator to produce a pronunciation lexicon with context-dependent multiple variants. At the lexical level, we apply an explicit modeling of pronunciation variation to add pronunciation variants at across morphemes as well as within morpheme into the pronunciation lexicon. At the acoustic level, we train the phone models with re-labeled transcriptions through forced alignment using context-dependent pronunciation lexicon. The proposed pronunciation lexicon offers the potential benefit for both training and decoding of a LVCSR system. Subsequently, we perform the speech recognition experiment on read speech task with 34K-morpheme vocabulary. Experiment confirms that improved performance is achieved by pronunciation variation modeling based on morpho-phonological analysis.