We have measured the temperature dependence of the gain characteristics in 1.3-µm AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Hakki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density, which is represented by the characteristic temperature TJtr of 116 K. In AlGaInAs/InP high T0 lasers, the temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.

We have proposed parallel optical interconnection technology, or ParaBIT, for high-throughput, low-cost optical interconnections and already developed a prototype parallel optical interconnect module called "ParaBIT-0," which has a total throughput of 28 Gb/s (700 Mb/s 40 channels). We are now developing a compact, high-throughput module called "ParaBIT-1," which has a total throughput of 60 Gb/s (1.25 Gb/s 48 channels) and is designed to achieve the highest-ever throughput density of 3.3 Gb/s/cc. In this paper, we describe the packaging structure, optical coupling structure and transmission characteristics of ParaBIT-1. We also discuss the technical prospect of realizing a parallel optical interconnect module with the bit rate of 2.5 Gb/s/ch.

The authors propose and experimentally demonstrate an all-optical exclusive OR (XOR) logic gate based on self-phase modulation (SPM) of a semiconductor optical amplifier (SOA). The scheme is insensitive to the polarization of the input signal and requires no additional synchronized clock. The output of the XOR gate showed the contrast ratio of more than 17 dB for the input signal at 2.5 GHz.

When a single-mode LD is subjected to distant reflection, relative intensity noise and the width of the optical spectrum are drastically increased. This phenomenon is known as 'coherence collapse. ' This letter demonstrates that penalty-free operation is possible at 2.5 Gbit/s even when a DFB-LD is in a state of coherence collapse. In addition, an LD in a state of coherence collapse is applied to a situation where signal light suffers from interferometric crosstalk. The results show that the LD reduces the influence of interferometric noise because of its wide spectral width.

Based on the partially-depleted, thin-film SOI/CMOS technology, the influence of reduced junction capacitance on the performance of the elementary gates and large scale gate array chip is reviewed. To further reduce the power consumption, SOI-specific device configurations, in which the body-bias is individually controlled, are effective in lowering the supply voltage and hence the power consumption while keeping the circuit speed. Two attempts are introduced: (1) DTMOS (Dynamic-Threshold MOS)/SOI to achieve ultra low-voltage and yet high-speed operation, and (2) ABB (Active-Body-Bias) MOS to enhance the current drive under the low supply voltage.

We have developed a highly integrated liquid-crystal-on-silicon microdisplay for virtual reality applications. The silicon panel of 704 576 pixels was designed and fabricated by a custom 0.35 µm complementary metal oxide semiconductor (CMOS) technology with emphasis on surface planarization. Topographic variation of less than 100 within the pixels was achieved. The pixel pitch was 9.6 µm, fill factor was 88% and display area was 0.36" in diagonal. Eight-bit digital data drivers and gamma-correction circuitry were integrated onto the silicon panel for true gray scale and full color representation. The display panel was assembled with a mixed twisted nematic and birefringence liquid crystal cell for high contract at CMOS compatible voltage. Chromatic characterization of the display using 3-color-in-1 light emitting diode (LED) as light source was performed. Contrast ratios on the pixel array were 95, 72 and 56, respectively, for red, green and blue colors at 3 V root-mean-squared voltage. In addition, a three-dimensional (3D) video stream in interlaced format was generated by a 3D modeling code for test and demonstration. Control logic was implemented to extract the left and right video frames and perform system timing synchronization. The silicon microdisplay was driven in frame inversion and by color sequence. With two sets of silicon microdisplays and eyepieces for each eye, we have demonstrated a 3D stereoscopic display based on the silicon microdisplay technology.

A photon-induced waveguide (PIG) for all-optical switching and wavelength conversion with the functionalities of regeneration and reshaping is proposed. Optical signals are used to switch between lateral optical wave guiding and antiguiding effects. A transfer-matrix method was developed to consider not only the variation of optical signal power along the waveguide, but also the spatial distributions of refractive index and optical confinement factor to explain the switching scheme between guiding and antiguiding. Theoretical analyses show that a threshold-like and sharp input-output response of PIG allows enhancement of the extinction ratio, reshaping, and thus enlargement of noise margin of optical signals in digital all-optical switching and wavelength conversion.

A tunable optical Fabry-Perrot filter was designed by setting a single-mode optical fiber normal to the diaphragm of a capacitive pressure sensor. The silicon diaphragm is deflected by the electrostatic force generated by applying a voltage to the capacitive electrodes. According to the movement of the diaphragm, the peak wavelength changed from 1546 to 1551 nm when applied voltage was increased from 20 to 50 V. The relationship of the wavelength change to the applied voltage was derived from the silicon diaphragm deflection theory. That measured change of the wavelength agrees well with the wavelength change calculated from this relationship. The commercial pressure sensors are expected to be able to be used as a tunable optical filter.

Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.

Appropriate meshes are crucial for accurate and efficient 3D process simulation. In this paper, we present a set of tools operating on surface and interface triangulations. These tools allow the improvement of the accuracy of interfaces, the reduction of the number of triangles, and the removal of obtuse not coplanarily compensated triangles. The first tool is used within integrated topography simulation environments based on different data structures, e.g. cell-based and segment-based. The latter two are particularly important for providing appropriate input to mesh generation for 3D process simulation.

A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO2 conduction band is treated as a single-valley spherical and parabolic band. The relevant scattering mechanisms are modeled consistently: both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.

This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.

Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. In addition with calculating the diffusion constant, we also identified its migration pathway and barrier energy in the case of Stillinger-Weber potential. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily disappears. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.

This work presents the first comprehensive full-band Monte Carlo model for the simulation of silicon/silicon-germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular -space grids. The feasibility of the FB-MC simulation is demonstrated by application to an industrial HBT with a graded germanium profile and different aspects of the microscopic carrier transport are discussed. Internal distributions of the transistor are calculated with a very low noise level and high efficiency allowing a detailed investigation of the device behavior.

Simultaneous wavelength conversion of multi-WDM channels is expected to be a key technique in near-future networks. In this paper, 4-channel wavelength conversion using four-wave mixing (FWM) in a hybrid wavelength selector is successfully demonstrated. The wavelength selector consists of two four-channel spot-size-converter-integrated semiconductor optical amplifier (SS-SOA) gate arrays on a planar-lightwave-circuit (PLC) platform and two PLC-arrayed-waveguide-gratings (AWGs). As the wavelength selector has an individual SS-SOA for the wavelength conversion of each channel, there is negligible interference between channels. Four WDM channels with an 2.5 Gb/s modulation were converted from 1555 to 1575 nm. Clear eye openings and only a small power penalty of less than 0.5 dB were observed. The receiver sensitivity was -31 dBm at a bit error rate (BER) of 10-9.

IC interconnect transmission line effects due to the characteristics of a silicon substrate and current return path impedances are physically investigated and experimentally characterized. With the investigation, a novel transmission line model is developed, taking these effects into account. Then an accurate signal delay on the IC interconnect lines is analyzed by using the transmission line model. The transmission line effects of the metal-insulator-semiconductor IC interconnect structure are experimentally verified with s-parameter-based wafer level signal-transient characterizations for various test patterns. They are designed and fabricated with a 0.35 µm CMOS process technology. Throughout this work, it is demonstrated that the conventional ideal RC- or RLC-model of the IC interconnects without considering these detailed physical phenomena is not accurate enough to verify the pico-second level timing of high-performance VLSI circuits.

In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both the organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).

Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.

Continuous-wave operation at room-tempera-ture has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on FIELO GaN substrates with a backside n-contact. This was made possible by introducing important new concept of reducing threading dislocations that occur during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. The fabricated laser diode shows the threshold current, the threshold current density and the threshold voltage were 36 mA, 5.4 kA/cm2 and 7.5 V, respectively, with the lasing wavelength of 412 nm and internal quantum efficiency as high as 98%.

An optical magnetic field measuring system using diluted magnetic semiconductors (DMS) probes is presented. The attractive features of DMS for building current/ magnetic field sensors are outlined. The system configuration includes a common-mode noise rejection scheme (CMR) to eliminate optic intensity noise induced in the fibre links by environmental vibrations. The CMR scheme relies on a pulse delay method based on the creation of two relatively delayed replicas of the photodetector output signal and their subsequent subtraction (division). Theoretical and experimental analyses of the system operation are developed and noise rejection methods using subtraction and division are presented and compared. Although CMR by division seems to be more appealing from the theoretical viewpoint (due to the rejection of intensity noise caused both by environmental vibrations and laser source output power fluctuations), in practical terms the subtraction is more reliable and easier to implement. The noise rejection figure measured experimentally is about 17 dBV for CMR both by subtraction and by division. A system calibration curve is presented. The minimum magnetic flux density detected with the system is 0.06 mT rms.