In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.

Sentiment analysis of microblogging has become an important classification task because a large amount of user-generated content is published on the Internet. In Twitter, it is common that a user expresses several sentiments in one tweet. Therefore, it is important to classify the polarity not of the whole tweet but of a specific target about which people express their opinions. Moreover, the performance of the machine learning approach greatly depends on the domain of the training data and it is very time-consuming to manually annotate a large set of tweets for a specific domain. In this paper, we propose a method for sentiment classification at the target level by incorporating the on-target sentiment features and user-aware features into the classifier trained automatically from the data createdfor the specific target. An add-on lexicon, extended target list, and competitor list are also constructed as knowledge sources for the sentiment analysis. None of the processes in the proposed framework require manual annotation. The results of our experiment show that our method is effective and improves on the performance of sentiment classification compared to the baselines.

In this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-performance QD laser for long-wavelength optical communications, (2) high-efficiency compound-type solar cell structures, and (3) single-QD devices for future applications related to quantum information. These devices are expected to be used in high-speed optical communication systems, high-performance renewable energy systems, and future high-security quantum computation and communication systems.

In this paper, an analytical threshold voltage model of the strained gate-all-around MOSFET fabricated on the Si1-xGex virtual substrate is presented by solving the two-dimensional Poisson equation. The impact of key parameters such as the strain, channel length, gate oxide thickness and radius of the silicon cylinder on the threshold voltage has been investigated. It has been demonstrated that the threshold voltage decreases as the strain in the channel increases. The threshold voltage roll-off becomes severe when increasing the Ge content in the Si1-xGex virtual substrate. The model is found to tally well with the device simulator.

Recent small cube satellites use higher frequency bands such as Ku-band for higher throughput communications. This requires high-frequency link in an earth radio station as well. As one of the solutions, we propose usage of bidirectional radio-on-fiber link employing a wavelength multiplexing scheme. It was numerically shown that the response linearity of the electro-absorption modulator integrated laser (EML) is sufficient and that the spurious emissions are lower enough or can be reduced by the radio-frequency filters. From the frequency response and the single-sideband phase noise measurements, the EML was proved to be used in a radio-on-fiber system of the cube satellite earth station.

To design high quality three-dimensional integrated circuits (3-D ICs), the effect of process and design parameters on delay must be adequately understood. This paper presents an electrical circuit model of an entire structure in through silicon via (TSV) based 3-D ICs with a new equation for on-chip interconnect capacitance and then proposes an effective model for evaluating signal propagation delay in vertically stacked chips. All electrical parameter values can be calculated by the closed-form equations without a field solver. The delay model is constructed with the first- or second-order function of each parameter to the delay obtained from a typical structure. The results obtained by on-chip interconnect capacitance equations and delay model are in excellent agreement with those by a field solver and circuit simulator, respectively. We also show that the model is very useful for evaluating effects of the process and design parameters on vertical signal propagation delay such as the sensitivity and variability analysis.

We investigated a control of the crystalline orientation of soluble organic semiconductor single crystals using liquid crystal solvents aligned by the electric field to improve the performance of organic thin-film transistors. We clarified that the semiconductor single crystal grows to the direction parallel to the liquid crystal alignment oriented by the lateral electric field.

We provide an overview of techniques for the photonic generation of arbitrary RF waveforms, particularly those suitable for impulse radio or multi-band ultrawideband (UWB)-over-fiber transmission, and chirped microwave waveforms, with an emphasis on microwave photonic filtering and optical spectral shaping followed by wavelength-to-time mapping. We discuss possibilities for integrating the various device and component technologies with silicon photonics.

We deposited thin films of thiophene/phenylene co-oligomers (TPCOs) onto poly(tetrafluoroethylene) (PTFE) layers that were friction-transferred on substrates. These films were composed of aligned molecules in such a way that their polarizations of emissions and absorbances were larger along the drawing direction than those perpendicular to that direction. Organic field-effect transistors (OFETs) fabricated with these films indicated large mobilities, when the drawing direction of PTFE was parallel to the channel length direction. The friction-transfer technique forms the TPCO films that indicate the anisotropic optical and electronic properties.

The novel ladder-shaped polydiacetylene with a terephthalamide linker in the molecular center, namely poly(TPh-bisDA) was synthesized by photo-polymerization. The characteristics of thin films of polymer were dependent upon a casting solvent, but no significant change of backbone conformation of the PDA was observed. Obtained film is expected to be applied to the semi-conducting materials for organic field effect transistors (OFET).

We report a real time method to monitor the chemical reaction in microdroplets, which contain an organic dye, 5(6)-carboxynaphthofluorescein and a CdSe/ZnS quantum dot using fluorescence spectra. Especially, the relationship between the droplet size and the reaction rate of the two reagents was investigated by changing an injection speed.

Amplification characteristics of the signal and the noise in the semiconductor optical amplifier (SOA), without facet mirrors for the intensity modulated light, are theoretically analyzed and experimentally confirmed. We have found that the amplification factor of the temporarily varying intensity component is smaller than that of the continuous wave (CW) component, but increases up to that of the CW component in the high frequency region in the SOA. These properties are very peculiar in the SOA, which is not shown in conventional electronic devices and semiconductor lasers. Therefore, the relative intensity noise (RIN), which is defined as ratio of the square value of the intensity fluctuation to that of the CW power can be improved by the amplification by the SOA. On the other hand, the signal to the noise ratio (S/N ratio) defined for ratio of the square value of the modulated signal power to that of the intensity fluctuation have both cases of the degradation and the improvement by the amplification depending on combination of the modulation and the noise frequencies. Experimental confirmations of these peculiar characteristics are also demonstrated.

We have investigated the microwave-detected photoconductivity responses from the amorphous In--Ga--Zn--O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films and annealing conditions, by comparing the TFT characteristics with the microwave photoconductivity decay ($mu$-PCD). It is concluded that the $mu$-PCD is a promising method for in-line process monitoring for the IGZO-TFTs fabrication.

Post-Silicon Tunable (PST) buffers are widely adopted in high-performance integrated circuits to fix timing violations introduced by process variations. In typical optimization procedures, the statistical timing analysis of the circuits with PST clock buffers will be executed more than 2000 times for large scale circuits. Therefore, the efficiency of the statistical timing analysis is crucial to the PST clock buffer optimization algorithms. In this paper, we propose a stochastic collocation based efficient statistical timing analysis method for circuits with PST buffers. In the proposed method, we employ the Howard algorithm to calculate the clock periods of the circuits on less than 100 deterministic sparse-grid collocation points. Afterwards, we use these obtained clock periods to derive the yield of the circuits according to the stochastic collocation theory. Compared with the state-of-the-art statistical timing analysis method for the circuits with PST clock buffers, the proposed method achieves up to 22X speedup with comparable accuracy.

An optical flip-flop circuit with a single semiconductor optical amplifier (SOA) using two orthogonal polarization states is proposed. The optical set / reset input and output signals are at a single wavelength. The flip-flop circuit consists of an SOA, a polarization combiner, a polarization splitter, two directional couplers, and two phase shifters. No continuous light source is required to operate the circuit. In this paper, we theoretically analyze the operation performance. Polarization dependence in SOA is considered in the analysis at a single wavelength operation, and numerically simulated results are presented. We confirm that the flip-flop circuit with a feedback-loop length of 15~mm can be operated at switching time of around 3~ns by 1~ns set / reset pulses. The flip-flop performance is discussed from viewpoints of transient overshoot and contrast at the steady on-off states.

This paper covers new architectures, technologies, and performance benchmarking together with prospects for high productivity and high performance computing enabled by photonics. The exponential and sustained increases in computing and data center needs are driving the demands for exascale computing in the future. Power-efficient and parallel computing with balanced system design is essential for reaching that goal as should support ∼billion total concurrencies and ∼billion core interconnections with ∼exabyte/second bisection bandwidth. Photonic interconnects offer a disruptive technology solution that fundamentally changes the computing architectural design considerations. Optics provide ultra-high throughput, massive parallelism, minimal access latencies, and low power dissipation that remains independent of capacity and distance. In addition to the energy efficiency and many of the fundamental physical problems, optics will bring high productivity computing where programmers can ignore locality between billions of processors and memory where data resides. Repeaterless interconnection links across the entire computing system and all-to-all massively parallel interconnection switch will significantly transform not only the hardware aspects of computing but the way people program and harness the computing capability. This impacts programmability and productivity of computing. Benchmarking and optimization of the configuration of the computing system is very important. Practical and scalable deployment of photonic interconnected computing systems are likely to be aided by emergence of athermal silicon photonics and hybrid integration technologies.

Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 $mu$m InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f$_{mathrm{3dB}})$ up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (2$^{mathrm{7}}$-1) pseudo random bit sequence (PRBS) modulation.

Bit error rate characteristic of negative feedback optical amplifier was investigated by manipulating the negative feedback signal intensity fed into the semiconductor optical amplifier together with the input signal. Consequently, bit error rate was reduced as negative feedback signal intensity increases. Suppression towards the unevenness at the power level `1' and overshoot during rising phase on the output signal eye-diagram was recorded. With negative feedback, through gain decrease of 2.4 dB, power penalty improved remarkably by 15 dB.

Graphene is attracting attention in electrical and optical research fields recently. We measured the optical absorption characteristics and polarization dependence of single-layer graphene (SLG) on sub-micrometer Si waveguide. The results for graphene lengths ranging from 2.5 to 200 $mu$ m reveal that the optical absorption by graphene is 0.09 dB/$mu$ m with the TE mode and 0.05 dB/$mu$ m with the TM mode. The absorption in the TE mode is 1.8 times higher than that in the TM mode. An optical spectrum, theoretical analysis and Raman spectrum indicate that surface-plasmon polaritons in graphene support TM mode light propagation.

A three dimensional (3D) chip stack featuring a 4096-bit wide I/O demonstrator incorporates an in-place waveform capturer on an intermediate interposer within the stack. The capturer includes probing channels on paths of signaling as well as in power delivery and collects analog waveforms for diagnosing circuits within 3D integration. The collection of in-place waveforms on vertical channels with through silicon vias (TSVs) are demonstrated among 128 vertical I/O channels distributed in 8 banks in a 9.9mm × 9.9mm die area. The analog waveforms confirm a full 1.2-V swing of signaling at the maximum data transmission bandwidth of 100GByte/sec with sufficiently small deviations of signal skews and slews among the vertical channels. In addition, it is also experimentally confirmed that the signal swing can be reduced to 0.75V for error free data transfer at 100GByte/sec, achieving the energy efficiency of 0.21pJ/bit.