A self-starting pulse laser with an erbium-doped fiber cooled at liquid-nitrogen temperature was demonstrated. The self-starting-pulse fiber-ring laser can produce an approximately 1 ns pulse train without the need for devices for polarization control and compensation of birefringence.

Reduction of the intensity noise in semiconductor lasers is important subject to extend application range of the device. Blue-violet InGaN laser reveals high quantum noise when the laser is operated with low output power. The authors proposed a new scheme of noise reduction both for the optical feedback noise and the quantum noise by applying electric feedback which is positive type at a high frequency and negative type for lower frequency range. Noise reduction effect down to a level lower than the quantum noise was experimentally confirmed even under the optical feedback.

Properties of the quantum noise and the optical feedback noise in blue-violet InGaN semiconductor lasers were measured in detail. We confirmed that the quantum noise in the blue-violet laser becomes higher than that in the near-infrared laser. This property is an intrinsic property basing on principle of the quantum mechanics, and is severe subject to apply the laser for optical disk with the small consuming power. The feedback noise was classified into two types of "low frequency type" and "flat type" basing on frequency spectrum of the noise. This classification was the same as that in the near infra-red lasers.

We initiated development of our own data processing software for laser microscope data with C# language. This software is provided with volume calculation function of a target portion, based on a new calculation algorithm that can precisely handle the volume calculation of the portion located on a tilted surface or on a distorted surface. In this paper, this algorithm and some exemplary results obtained thereby, as well as some further development aims, are briefly described.

We propose an information-sharing network system, capable of forming and dynamically reconfiguring multiple information-sharing groups on the same network platform by using wavelength routing and distributed shared memory technologies. The network system comprises information-sharing terminal nodes equipped with a shared memory and a wavelength-tunable transmitter, network management terminal and an arrayed-waveguide grating (AWG). The information-sharing terminal nodes are connected to an AWG by a pair of optical fibers, forming a star-shaped topology. Information is shared among the information-sharing terminal nodes through the establishment of a logical information-sharing ring. This is accomplished by adjusting the output of the wavelength-tunable transmitter at each terminal node to an appropriate wavelength according to the wavelength-routing characteristics of the AWG wavelength router. We developed a prototype information-sharing network system, in which, as preliminary experiments, HDTV and SDTV videos were used for real-time information sharing. The dynamic reconfiguration of information-sharing groups and a simple automatic restoration technique have been successfully demonstrated. The system is applicable to distributed computer processing systems and high-capacity information-sharing applications such as high-quality videoconferences.

A lasing charactrization of a Brillouin/erbium optical fiber laser (BEFL) is experimentally discussed. In the BEFL, an erbium-doped fiber amplifier (EDFA) is incorporated into the Brillouin laser resonator to enhance small Brillouin gain, which makes the configuration of the Brillouin laser resonator easy and flexible. The experimental results show that the output power of the BEFL has a threshold against the Brillouin pump power, and above the Brillouin threshold, the output power increases linearly with the EDFA pump power. The BEFL threshold decreases with increasing the length of the optical fiber in the laser resonator used as a Brillouin gain medium. The BEFL oscillates in a stable single longitudinal mode because the bandwidth of the Brillouin gain profile is very narrow ( 30 MHz). The relative intensity noise (RIN) and the spectral lineshape were measured. The noise floor level decreases with increasing the EDFA pump power, and the full-width at half maximum of the BEFL was measured to be about 8 kHz.

The recent progress in the field of Ti:Er:LiNbO3 waveguide lasers with emission wavelengths in the range 1530 nm < λ < 1603 nm is reviewed. After a short discussion of the relevant fabrication methods concepts and properties of different types of lasers with grating resonator, acoustooptically tunable Fabry Perot type lasers and new ring laser structures are presented.

We demonstrated the transmission over 80 km at 10 Gb/s by using the amplifier and electroabsorption-modulator integrated laser diode. Tilt-facet antireflection window is implemented, inside of which a monitor photodiode is monolithically integrated for accurate power regulation. To better control the amplifier-input power and to reduce the feedback of the amplified spontaneous emission, an attenuator is incorporated by means of the inner-window. By amplifying the modulated signal and compensating modulator-chirp by gain-saturation in the amplifier, high power optical transmission is achieved from a device with -10 dB attenuation at total laser and amplifier currents of 200 mA.

We present and demonstrate a novel method of generating a π phase-alternated return-to-zero (RZ) signal together with pulse-amplitude equalization in a rational harmonic mode-locked fiber ring laser, by using a dual-drive Mach-Zehnder modulator. By adjusting the voltages applied to both arms of the modulator, amplitude-equalization and π phase shift can be achieved successfully at a 9.95 GHz repetition rate. The generated alternate-phase RZ signals show enhanced transmission performance in the single-mode fiber (SMF) links without dispersion compensation.

We have implemented a distributed sensor system based on an array of fiber Bragg gratings (FBGs), which can measure up to 1000 points with a single piece of fiber. The system consists of FBGs having the same resonant wavelengths and small reflectivities (0.1 dB), and a wavelength tunable optical time-domain reflectometer (OTDR). To interrogate the distributed grating sensors and to address the event locations simultaneously, we have utilized the tunable OTDR. A thermoelectric temperature controller was used to tune the emission wavelength of the OTDR. The operating temperature of the laser diode was changed. By tuning the pulse wavelength of the OTDR, we could identify the FBGs whose resonant wavelengths were under change within the operating wavelength range of the DFB LD. A novel sensor cable with dry core structure and tensile cable was fabricated to realize significant construction savings at an industrial field and in-door and out-door applications. For experiments, a sensor cable having 52 gratings with 10 m separations was fabricated. To prevent confusion with unexpected signals from the front-panel connector zone of the OTDR, a 1 km buffer cable was installed in front of the OTDR. The proposed system could distinguish and locate the gratings that were under temperature variation from 20 to 70.

Recent progress and achievements in creating single fundamental mode vertical cavity lasers with the technique of etching a 2-dimensional pattern of photonic crystal holes into the top distributed Bragg reflector are described. A simulation method for the design of single mode lasers is described, along with accuracy and limitations in predicting modal properties in these devices. Progress in improving output power, methods of lowering threshold currents, and small signal modulation of single mode lasers are discussed.

This paper describes 40-Gbit/s operation of 1.55-µm electro-absorption (EA) modulators applicable to compact and low-cost transmitters for very-short-reach (VSR) applications. We start by identifying factors that make a multi-quantum-well (MQW) design suitable for high levels of output power and for uncooled operation. From the basic experimental results, we determine that a valence-band discontinuity ΔEv at around 80 meV is optimal in terms of combining high-output-power operation and a good extinction ratio. We then apply the above findings in an InGaAsP-MQW EA modulator that is monolithically integrated with a distributed feedback (DFB) laser, and thus obtain operation with high output power (+1.2 dBm), a high ER (10.5 dB), and a low power penalty (0.4 dB after transmission over 2.6 km of single-mode-fiber). These results confirm the applicability of our EA modulator/DFB laser to VSR applications. After that, we theoretically demonstrate the superiority in terms of ER characteristics of the InGaAlAs-MQW over the conventional InGaAsP-MQW. InGaAlAs-MQW EA modulators are fabricated and demonstrate, for the first time, 40-Gbit/s operation over a wide temperature range (0 to 85).

A 1.3-µm InGaAlAs-MQW RWG DFB laser with low-resistance notch-free grating during operations of up to 12.5 Gb/s at 115 was fully investigated. This performance was achieved by combining the high differential gain of the InGaAlAs MQW active layer, high characteristic temperature of RWG structures, and low-resistance notch-free grating. In addition, transmission over 30-km was achieved with the laser running at up to 115. These results confirm the suitability of this type of laser for use as a cost-effective light source in 10-Gb/s datacom applications.

The wavelength switching performance of a super-structure-grating DBR laser (SSG-DBR-LD) has been investigated. The lasing wavelength could be selected by directly modulating the wavelength tuning region with the switching time of less than a few nanoseconds. We observed that the pulse width of the output signal in each lasing wavelength monotonically changed with increasing the injection current amplitude when the low level of injection current was fixed. This is considered to be due to the increase of transient time from high level to low level of injection current when the amplitude increases and time duration for carrier density to satisfy the lasing mode at the low level of injection current decreases. For improving the stability of the pulse width of the output signal, a novel method of the mean level of injection current pulse fixed is proposed. Almost the same pulse width for wavelength switching from one supermode to another has been realized because the low level of injection current becomes lower than the conventional method and the time duration for carrier density to satisfy the lasing mode at the low level of injection current increases.

The role of hydrogen in the Si film during excimer laser annealing (ELA) has been successfully studied by using a novel sample structure, which is stacked by a-Si film and SiN film. Hydrogen contents in the Si films during ELA are changed by preparing samples with hydrogen content of 2.3-8.2 at.% in the SiN films with a use of catalytic (Cat)-CVD method. For the low concentration of hydrogens in the Si film, the grain size increases by decreasing hydrogen concentration in the Si film, and the internal stress of the film decreases as increasing the shot number. For the high concentration of hydrogens in the Si film, hydrogen burst was observed at 500 mJ/cm2 and the dependence of the internal stress on the shot number becomes weak even at 318 mJ/cm2. These phenomena can be understood basically using the secondary grain growth mechanism, which we have proposed.

The reliability of a 266 nm cw (continuous-wave) solid-state laser under the influence of purge gas was considered. Scatterers on a mirror during long-term operation were ammonium sulfate (NH4SO4). The synthesis of ammonium sulfate was related to the amount of water in the purge gas. UV power decreased by scatterers when the purge was not conducted.

Location control of grains by µ-Czochralski process with excimer-laser is a powerful tool for realizing high performance single-crystalline Si TFTs (c-Si TFTs). This study reports the behavior of p-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by µ-Czochralski method. Self-aligned p-channel single-crystalline Si TFTs is fabricated with a top gate structure having ECR-PECVD SiO2 as gate insulator. The field effect hole mobility of 250 cm2/Vs and subthreshold swing of 0.29 V/dec. are obtained successfully. Effects of active Si thickness and boron channel doping on the characteristics of the c-Si TFTs were studied.

Intensity-noise characteristics of stable multi-mode Fabry-Perot semiconductor lasers are analyzed experimentally and theoretically. Mode-partition noise caused by optical filtering and propagation through optical fibers is investigated by evaluating the relative intensity noise and signal-to-noise ratio. The experimental results indicate that the simplified two-mode analysis provides a good approximation. Suppression of the mode-partition noise by nonlinear gain is experimentally confirmed.

This paper presents a new approach based on current mode circuits for fast and accurate optical level monitoring with wide dynamic range of a gigabit burst-mode laser driver chip. Our proposed solution overcomes the drawbacks that voltage mode implementations show at higher bit rates or in other technologies. The main speed-limiting factor of the level monitoring circuitry is the parasitic capacitance of the back facet monitor photodiode. We propose the use of an active-input current mirror to reduce the impact of this parasitic capacitance. The mirror produces two copies of the photo current, one to be used for the "0" level measurement and another for the "1" level measurement. The mirrored currents are compared to two reference currents by two current comparators. Every reference current needs only one calibration at room temperature. A pattern detection block scans the incoming data for patterns of sufficiently long consecutive 0's or 1's. At the end of such a pattern a valid measurement is present at the output of one of the current comparators. Based on these measurements the digital Automatic Power Control (APC) will adjust the bias (IBIAS) and modulation current (IMOD) setting of the laser driver. Tests show that the chip can stabilize and track the launched optical power with a tolerance of less than 1 dB. In these tests the pattern detection was programmed to sample the current comparators after 5 bytes (32 ns at 1.25 Gbps) of consecutive 1's and 0's. Automatic power control on such short strings of data has not been demonstrated before. Although this laser transmitter was developed for FSAN GPON applications at a speed of 1.25 Gbps upstream, the design concept is generic and can be applied for developing a wide range of burst mode laser transmitters. This chip was developed in a 0.35 µm SiGe BiCMOS process.

A new scheme for evaluation of shapes of pips and craters formed by arc discharges on electrical contact surfaces is proposed. Measuring a height of a pip or a depth of a crater as well as an average diameter thereof with a scanning laser microscope and then putting a plot having the measured values as its vertical and horizontal coordinates enable us to numerically and briefly evaluate shapes of those pips and craters on arc-damaged contact surfaces. Some exemplary results obtained by this evaluation scheme are presented here.