A differential on chip oscillator (OCO) is proposed in this paper for low supply voltage, high frequency accuracy and fast startup. The differential architecture helps the OCO achieve a good power supply rejection ratio (PSRR) without using a regulator so as to make the OCO suitable for a low power supply voltage of 1.38V. A reference voltage generator is also developed to generate two output voltages lower than Vbe for low supply voltage operation. The output frequency is locked to 48MHz by a frequency-locked loop (FLL) and a 3.3-ppm/°C temperature coefficient of frequency is realized by the differential voltage ratio adjusting (differential VRA) technique. The startup time is only 1.47μs because the differential OCO is not necessary to charge a big capacitor for ripple reduction.

This report describes an all-digital phase-locked loop (ADPLL) using a temperature compensated settling time reduction technique. The novelty of this work is autonomous oscillation control word estimation without a look-up table or memory circuits. The proposed ADPLL employs a multi-phase digitally controlled oscillator (DCO). In the proposed estimation method, the optimum oscillator tuning word (OTW) is estimated from the DCO frequency characteristic in the setup phase of ADPLL. The proposed ADPLL, which occupies 0.27×0.36mm2, is fabricated by a 65 nm CMOS process. The temperature compensation PLL controller (TCPC) is implemented using an FPGA. Although the proposed method has 20% area overhead, measurement results show that the 47% settling time is reduced. The average settling time at 25°C is 3µs. The average reduction energy is at least 42% from 0°C to 100°C.

An on-chip temperature compensation active bias circuit having tunable temperature slope has been proposed, and its application to an X-band GaAs FET monolithic microwave integrated circuit (MMIC) power amplifier (PA) is described. The proposed bias circuit can adjust the temperature slope of gate voltage according to the bias condition of the PA, and also realizes the higher temperature slope of the gate voltage by employing the diode and the FET which operates at near threshold voltage (Vt) in the bias circuit. As a result, the gain of PAs operated at any bias conditions is kept almost constant against temperature by applying the proposed bias circuit. Moreover, the proposed bias circuit can be integrated in the same chip with the MMIC PA since it does not need off-chip components, and operates with only negative voltage source. The fabricated results of the on-chip temperature compensation active bias circuit shows that the temperature slope of the gate voltage varies from 2.1 to 6.3 mV/, which is enough to compensate the gain of not only class-B PA but also class-A PA. The gain deviation of the developed GaAs FET MMIC PA with the proposed bias circuit has been reduced from 3.3 dB to 0.6 dB in the temperature range of 100.

A 2.4 GHz 0.13 µm CMOS transceiver LSI, supporting Bluetooth V2.1+enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between -40 and +90. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of -90 dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13 µm CMOS and operation at a low supply voltage of 1.5 V result in small area and low power consumption.

A novel design for temperature-compensated complementary metal-oxide semiconductor (CMOS) voltage reference sources by using the 1st order voltage reference taking into account the electrical property of the conventional current generator was proposed to minimize a temperature coefficient. A temperature coefficient of the proposed voltage reference source was estimated by using the current generator, which operated at smaller or larger temperature in comparison with the optimized operating temperature. The temperature coefficient at temperature range between -40 and 125, obtained from the simulated data by using hynix 0.35 µm CMOS technology, was 3.33 ppm/. The simulated results indicate that the proposed temperature-compensated CMOS voltage reference sources by using the 1st order voltage reference taking into account the electrical properties of the conventional current generator can be used to decrease the temperature coefficient.

In this era of System-On-a-Chip (SOC) technology, a designable initial state is required. Thus, embedding low voltage and low power Power-On-Reset (POR) circuit on the SOC chip is important for the portable device. This paper proposes a new POR circuit with process and temperature compensations. A band-gap reference is used in this circuit to reduce the effect of the temperature and process variations. With 200 mV hysteretic design provides robust noise immunity against voltage fluctuations on the power supply. The POR circuit has been designed, simulated, and implemented. A test chip has been fabricated by using 0.18 µm single-poly triple-metal CMOS logical process. Measurement results show the rise threshold voltage Vrr has only a 3% variation under the temperature range from -40 to 125. The power consumption is 39 mW at the 1.8 V power supply. The chip size of the POR is 62 mm280 mm. Thus, this POR circuit has a great potential to apply to a low power supply system.

A linear-in-dB VGA of the current-divider type is fabricated in 0.25 µm CMOS technology. Two gain compensation techniques are proposed in order to compensate the gain deviations due to a MOSFET which has a square-law characteristic or an exponential-law characteristic determined by its current density. Temperature compensation techniques are also proposed. Measure results obtained at 380 MHz are a gain range of 80 dB, a gain error of 3 dB, and an NF of 11 dB.

A highly stable oven-controlled crystal oscillator (OCXO) with low phase-noise characteristics has been developed using a dual-mode SC-cut quartz crystal oscillator. The OCXO uses a conventional oven-control system for coarse compensation and a digital-correction system, which uses B-mode signal in an SC-cut resonator as a temperature sensor, for fine compensation. Combining these two forms of compensation greatly improves the stability of the C-mode frequency without requiring a double-oven system. The experimental results indicated that the frequency stability of the proposed OCXO, including the frequency-temperature hysteresis, is ten times better than that of a conventional, free-running OCXO. The results also indicated that the proposed OCXO has good frequency retraceability and low phase-noise characteristics.

The temperature compensation technique of InGaP/GaAs power heterojunction bipolar transistor (HBT) with novel bias circuit using Schottky diodes has been developed. The variation in the quiescent current to the temperature is less than 30% from -30C to 90C by this technique, where that is about 125% by the conventional bias circuit. The RF performance of the power HBT MMIC with novel bias circuit shows flat temperature characteristics enough to be used for power application of wireless communications.

We developed piezoresistors with an intrinsic compensation of the offset temperature characteristics. High energy ion implantation was applied to fabricate this type of piezoresistor. The dopant profile of the buried piezoresistor resembles to that of the junction gate field effect transistor (JFET). The buried layer corresponds to a channel of JFET, and the substrate bias corresponds to the gate voltage. Owing to the independent temperature varying parameters, i.e., width of the depletion layer and carrier mobility in the channel, the drain current of the JFET has a temperature independent point at an appropriate gate source voltage. The effect was used in the new type of buried piezoresistor which has a driving point of zero temperature coefficient of resistance at an appropriate gate source voltage.