The coupling response of an external transient electromagnetic field to a transmission line is considered. An experiment has been conducted to verify the line equations for a transmission line excited externally by a transient near field. The model field is generated by a monopole antenna installed in the vicinity of the transmission line and driven by a step waveform. The waveform is analyzed into discrete spectrum components using a Fourier transform. The frequency-domain field components affecting the transmission line are estimated by the moment method, and then the induced frequency-domain voltage at the terminal load is converted into a time-domain voltage using an inverse Fourier transform. Comparison between the measured and the computed values provides verification of the line equations. The coupling mechanism is discussed from the experimental results. It seems equivalently that the transmission line picks up the field, generated at the feed point and the top point of the monopole antenna, at both terminal ends.

Many ATM switching modules with high performance have been proposed and analyzed. A development of a large scale ATM switching system (e.g., used as a central switch) is the key to realization of the broadband ISDN. However, the dimension of ATM switching ICs is limited by the technological and physical constraints on VLSI. A multistage switching configuration is one of the promising configurations for a large scale ATM switch. In this paper, we treat a 3-stage switching configuration with no internal bufferes; i.e., bufferless switches are employed at the first and second stages, and output buffered switches at the third stage. A short-term cell loss probability is analyzed in order to examine the influence of bursty traffic on performance of the bufferless switch used at the first two stages. Furthermore, we propose a 4-stage switching configuration with traffic distributors added at the first stage. This switch provides more paths between a pair of input and output ports than the 3-stage switching configuration mentioned above. A few schemes to distribute cells are compared. It is shown that the distributor successfully reduces the deterioration of cell loss probability due to bursty traffic by splitting incoming cells into several switching modules.

Network functions (NFs) such as network reflection and transmission coefficients are discussed about an interconnected network consisting of a lumped distributed N-port N non-commensurate line junction network (N-port) and a M-port. The derivation of the NFs can be done quite easily regardless of the complexity of the network by considering the flow of the traveling waves and conditions of the interconnected interface of the two multi-ports. The theory of this paper has been examined with respect to interconnected networks consisting of two 3-ports in both the time and frequency domains, and has shown good results consistent with other papers. The network functions described here can be used not only for the analysis of high-speed pulse propagation in digital systems with branches but also for the analysis of microwave distributed line networks such as hybird rings. In that sense, a new analysis method is presented in this paper.

This paper deals with the method of integration of voice and data in wireless communication systems. By applying the DSV (Data Steal into Voice) technique to D-TDMA (Dynamic Time Division Multiple Access) systems, this paper presents an MAC (Media Access Control) method of integration of voice and data for the systems such as cellular radios and cordless phones. After a brief review of the D-TDMA scheme and the DSV technique, the protocol called D-TDMA/DSV is described. Then, a static analysis to derive the channel capacity and a dynamic analysis to evaluate the throughput and delay performance are presented. An extension of TFA (Transient Fluid Approximation) analysis is employed in the dynamic analysis. With the same system parameters, the capacity of D-TDMA/DSV is compared with that of the traditional D-TDMA. Under the limitation of the blocking probability required for cellular radios, some numerical examples of dynamic analysis are given to show the throughput and delay performance of the system.

Device models for a laser diode, photodetector, MESFET, HEMT, bipolar transistor, diode, and resistor are proposed and are implemented in a commercial mixed-signal simulator along with models for an optical fiber, an external optical modulator, and a pulse pattern generator. The validity of the models is confirmed by comparing simulated and experimental results. The performance of a mixed photonic/electronic circuit, which is determined by a large-signal waveform and the device noises, is estimated by the present analysis method.

Circuit access control is a traffic control technique of rejecting calls arriving at a group of specified circuits to make the group free at a target scheduled time so that the capacity may be dynamically reallocated to serve other traffic demand. This technique plays an important role for resource allocation control in state-of-the-art capacity reconfigurable networks as well as for switching calls on a reserved basis in the ISDNs. In this paper, we present a novel adaptive scheme for circuit access control in order to overcome the inefficiency of the conventional deterministic scheme. The presented scheme is based only on knowledge about service time and bandwidth characteristics of calls. The transitional behavior of the circuit group under the scheme is analyzed, and the gain in utilization achieved by the adaptive scheme is examined. We treat a model of the circuit group shared by multi-slot calls with different service times, and describe the results of the transient analysis and the approximation method for evaluating the gains.

The wave forms of electric and magnetic fields radiated by short gap discharges are measured to analyze electrostatic discharge (ESD) events in the near-field zone with the monopole antennas, the loop antenna and the 5.5GHz bandwidth waveform digitizer. The antenna outputs are corrected by the measured characteristics of the antennas. The relations between the measured electric field and the discharge currents are discussed.

The analysis of the shielding properties of a planar wire-mesh shield embedded in a general isotropic--chirality is included--or anisotropic stratified media is here presented. A suitable model of the grating has been introduced in order to consider the occuring phenomena, in fact through a spectral technique the electromagnetic problem is translated into the equivalent circuit network model that allows to express the time response of the shielded field for the NEMP incidence in a closed form.

The analysis of the shielding properties of chiral materials slabs is here presented, first deriving the spectral representation of the shielded fields, then getting the asymptotic expression of the transmission matrix in the higher frequencies. The time response of the shielded field for the NEMP incidence is finally deduced in a closed form.

A new algorithm, which is incorporated into the waveform relaxation analysis, for efficiently simulating the transient response of single lossy transmission lines or lossy coupled multiconductor transmission lines, terminated with arbitrary networks will be presented. This method exploits the inherent delay present in a transmission line for achieving simulation efficiency equivalent to obtaining converged waveforms with a single iteration by the conventional iterative waveform relaxation approach. To this end we propose 'line delay window partitioning' algorithm in which the simulation interval is divided into sequential windows of duration equal to the transmission line delay. This window scheme enables the computation of the reflected voltage waveforms accurately, ahead of simulation, in each window. It should be noted that the present window partitioning scheme is different from the existing window techniques which are aimed at exploiting the non–uniform convergence in different windows. In contrast, the present window technique is equivalent to achieving uniform convergence in all the windows with a single iteration. In addition our method eliminates the need to simulate the transmission line delay by the application of Branin's classical method of characteristics. Further, we describe a simple and efficient method to compute the attenuated waveforms using a particular form of lumped element model of attenuation function. Simulation examples of both single and coupled lines terminated with linear and nonlinear elements will be presented. Comparison indicates that the present method is several times faster than the previous waveform relaxation method and its accuracy is verified by the circuit simulator PSpice.

It is known that homogeneous networks are ones which perform parallel algorithms, and the dynamics of neural networks are applied to practical problems including combinatorial optimization problems. Both homogeneous and neural networks are parallel networks, and are composed of Boolean elements. Although a large number of studies have been made on the applications of homogeneous threshold networks, little is known about the relation of the dynamics of these networks. In this paper, some results about the dynamics, used to find the lengths of periodic and transient sequences, as built by parallel networks including threshold and homogeneous networks are shown. First, we will show that for non–restricted parallel networks, threshold networks which permit only two elements to transit at each step, and homogeneous networks, it is possible to build periodic and transient sequences of almost any lengths. Further, it will be shown that it is possible for triangular threshold networks to build periodic and transient sequences with short lengths only. As well, homogeneous threshold networks also seem to build periodic and transient sequences with short lengths only. Specifically, we will show a sufficient condition for symmetric homogeneous threshold networks to have periodic sequences with the length 1.

The ultimate minimum energy of switching mechanism for MOS integrated circuits have been studied. This report elucidates the evaluation methods for minimum switching energy of instantaneous discharged mechanism after charging one, namely, recycled energy of the MOS device. Two approaches are implemented to capture this concept. One is a switching energy by the time-dependent gate capacitance (TDGC) model ; the other one by results developed by transient device simulation, which was implemented using Finite Element Method (FEM). It is understood that the non-recycled minimum swhiching energies by both approaches show a good agreement. The recycled energies are then calculated at various sub-micron gate MOS/SOI devices and can be ultra-low power of the MOS integrated circuits, which may be possible to build recycled power circuitry for super energy-saving in the future new MOS LSI. From those results, (1) the TDGC is simultaneously verified by consistent match of the non-recycled minimum switching energies; (2) the recycled switching energy is found to be the ultimate lower bound of power for MOS device; (3) the recycled switching energy can be saved up to around 80% of that of current MOS LSI.

Recently, high-dose implantation and low temperature annealing have become one of the key techniques in shallow junction formation. To fabricate shallow junction in quarter-micron CMOS VLSIs, it is well known being important to evaluate the transient enhanced diffusion (TED) of implanted dopants at low temperature furnace annealing, which is caused by the damages of implantation. We have newly studied the TED phenomena by a compact empirical method. This approach has merits of simplicity and better physical intuition, because we can use only minimal parameters to describe the TED phenomena. The other purpose of this work is to evaluate two-dimensional transient enhanced diffusion focusing on phosphorus implant and furnace annealing. Firstly, we defined effective diffusivity of the TED and determined extraction procedure of the model parameters. Number of the TED model parameters is minimized to two, which describe effective enhanced diffusivity and its activation energy. The parameters have been extracted from SIMS profile data obtained from samples which range 1013-31015 cm-2 and 850-950 for phosphorus implanted dose and annealing temperature, respectively. Simulation results with the extracted transient enhanced diffusion parameters show good agreements well with the SIMS data within 2% RMS-error. Critical doses for phosphorus enhanced diffusion have been determined in 950 annealing condition. No transient enhanced diffusion is observed at 950 under the implant dose of 11013 cm-2. Also the transient enhanced diffusivity is leveled off over the dose of 11014 cm-2. It is seen that the critical dose in TED phenomena might be temperature dependent to a certain extent. We have also verified that two-dimensional effect of the TED phenomena experimentally. Two-dimensional phosphorus n- layer is chosen to verify the simulation. It was concluded that the TED has isotropic nature in phosphorus n- diffusion formation.

The transient scattering of a half sine pulse wave by a conducting rectangular cylinder with an open sidewall is rigorously analyzed by using the point matching method (taking into account the edge condition exactly) combined with the fast inversion of Laplace transform. Numerical results are presented for back scattered and forward scattered responses of the far fields when a half sine pulse is incident on the open side and the closed side of the cylinder. The physical meaning of the transient responses is discussed in detail. The comparison of the responses with those by a perfect conducting rectangular cylinder is presented.

The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.

Rate based control is a promising way to achieve an efficient packet transmission especially in high speed packet switching networks where round trip delay is much larger than packet transmission time. Although inappropriate tuning for the parameters, increasing and decreasing factors, of the rate control function causes the performance degradation, most of the previous works so far have not studied the effect of the parameters on the performance. In this paper, we investigate the effect of the rate control parameters on the throughput under the condition that the packet loss probability is kept below a specific value, say 10-6. For this purpose, we build a queueing model and carry out a transient analysis to examine the dynamic behavior of the queue length at an intermediate node in a high speed network suffering from large propagation delay. Numerical examples exploit the optimal value of the parameters when one or two source-destination pairs transmit packets. We also discuss the effect of the propagation delay on the performance. Our model can be applicable to investigate the performance of various kinds of rate-based congestion control when the relation between the congestion measure and the rate control mechanism is given explicitly.

GaAs MESFETs with a p-buffer layer (or a buried p-layer) are important devices for high-speed GaAs ICs. To study what conditions are required as a good substrate for ICs, we have investigated, by two-dimensional simulation, small-signal parameters and drain-current transients of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate. It is shown that the introduction of a p-buffer layer is effective to improve the transconductance and the cuttoff frequeycy. These parameters are not degrade even if the p-layer doping is increased and a neurtral p-region exists. It is also shown that drain-current drifts and hysteresis in I-V curves can occur in a case with a p-buffer layer, too. It is concluded that the introduction of a relatively highly-doped p-layer on a substrate with low acceptor and electron trap (EL2) densities is effective to realize the stable and high performance of GaAs MESFETs.

The F-matrix expressions of inverted-L-type four-terminal networks, each involving an element with the power-law conductivity σ(ω)ωa (0a1) connected to a resistance R, an inductance L or a capacitance C, were derived using the standard procedures of Laplace transformation, indicating that the exponents of the complex angular frequency s, so far limited to the integers for the transmission circuits with finite elements, can be extended to the real numbers. The responses to a step voltage calculated show hysteretic behavior reflecting the resistance-capacitance ambivalent nature of the power-law conductivity.

Transient responses by a dielectric sphere have been analyzed here for a dipole source located at the center. The formulation has been constructed first in the frequency domain, then transformed into the time domain to obtain for an impulsive response by two analytical methods, namely the Singularity Expansion Method and the Wavefront Expansion Method. While the former method collects the contributions around the singularities in the complex frequency domain, the latter gives us a result which is a summation of each successive wavefront arrivals. A Gaussian pulse has been introduced to simulate an impulse response result. The Gaussian pulse response is analytically formulated by convolving Gaussian pulse with the corresponding impulse response. Numercal inversion results are also calculated by Fast Fourier Transform Algorithm. Numerical examples are shown here to compare the results obtained by these three methods and good agreement are obtained between them. Comments are often made in connection with the corresponding two dimensional cylindrical case.

A current source with current switches (switched current source) is widely used in various analog ICs. One of its typical application is data converters. This paper describes an analysis of the transient behavior of a switched current source. The analysis has clarified conditions and causes of overshooting in the output waveform. The analysis also clarifies dependence of the settling time on parameters. The waveform heavily depends on time constant and initial charge at the internal node where current source and current switch are connected. They can cause the overshooting and limit the settling time. A phenomenon of acceleration of the settling time and an influence of the charge coupling through current switches are also discussed. A chart mentioned in this paper is useful for the initial design and the improvement of switched current sources.