A fully integrated CMOS pulse transceiver with digital beam-formability for mm-wave active imaging is presented. The on-chip pulse transmitter of the transceiver includes an eight-element antenna array connected to eight pulse transmitters and a built-in relative pulse delay calibration system. The receiver employs a non-coherent detection method by using a FET direct-power detection circuit integrated with an antenna. The receiver dipole-patch antenna derives from the transmitter antenna but is modified with an on-chip DC-bias tail by shorting two arms of the dipole. The bandwidth of the receiver antenna with the DC-bias tail is designed to achieve 50.4-GHz in simulation and to cover the bandwidth of transmitter antennas. The output of the receiver antenna is connected to a resistive self-mixer followed by an on-chip low pass filter and then an amplifier stage. The built-in relative pulse delay calibration system is used to align the pulse delays of each transmitter array elements for the purpose of controlling the beam steering towards imaging objects. Both transmitter and receiver chips are fabricated in a 65-nm CMOS technology process. Measured pulse waveform of the receiver after relatively aligning all Tx's pulses is 0.91 mV (peak-peak) and 3-ns duration with a distance of 25mm between Rx and Tx. Beam steering angles are achieved in measurement by changing the digital delay code of antenna elements. Experimental results show that the proposed on-chip transceiver has an ability of digital transmitted-pulse calibration, controlling of beam-steeting, and pulse detection for active imaging applications.

To improve throughput of Electron Beam Direct Writing (EBDW) with Character Projection (CP) method, a structured routing architecture (SRA) has been proposed to restrict VIA placement and wire-track transition. It reduces possible layout patterns in the interconnect layers, and increases VIA and metal figure numbers in the EB shots while suppressing the CP character number explosion. In this paper, we discuss details of the SRA design methodology, and demonstrate the CP performance by SRA in comparison with other EBDW techniques. Our experimental results show viable CP performance for practical use, and prove SRA's feasibility in 14nm mass fabrication.

We introduce a 16 × cascaded time difference amplifier (TDA) using a differential logic delay cell with 0.18 µm CMOS process. By employing the differential logic delay cell in the delay chain instead of the CMOS logic delay cell, less than 8% TD gain offset with 150 ps input range is achieved. The input referred standard deviation of the output time difference error is 2.7 ps and the input referred is improved by 17% compared with that of the previous TDA using the CMOS logic delay cell.

Regenerative Pass-transistor Logic (RPL), a modular dual-rail circuit technique for high speed logic design that gives reasonably low power consumption, was developed. The technique can be applied to basic logic gates, full adders, multiplier units, and more complicated arithmetic logics like Conditional Carry Select (CCS) circuit. The magnitude of propagation delay time of RPL is smaller than the conventional CPL(Complementary Pass-transistor Logic), or DPL (Double Pass-transistor Logic). Low power consumption can also be achieved by reduced number of transistors and metal interconnections. Simulation and layout data also proved that RPL is advantageous over existing dual-rail logics while considering speed, power consumption and layout area.

This paper demonstrates the resonant power supply noise reduction effects of STO thin film decoupling capacitors, which are embedded in interposers. The on-interposer STO capacitor consists of SrTiO2 whose dielectric constant is about 20 and is sandwitched by Cu films in an interposer. The on-interposer STO capacitors are directly connected to the LSI PADs so that they provide large decoupling capacitance without package leadframe/bonding wire inductance, resulting in the reduction of the resonant power supply noise. The measured power supply waveforms show significant reduction of the power supply noise, and the Shmoo plots also show the contribution of the STO capacitors to the robust operations of LSIs.

In this paper, a novel pass-transistor logic with an efficient level restoration circuit, named Power Saved Pass-transistor Logic (PSPL), is proposed. It is shown how, through the use of regenerative feedback with pMOS switches, we reduce the power consumption and propagation delay compared to conventional pass-transistor logic. To demonstrate the performance of PSPL, a 5454-bit multiplier is designed. For speed and power optimization, the multiplier uses high compression-rate compressors without Booth Encoding, and a 108-bit conditional sum adder with separated carry generation block. The measured multiplication time was 13. 5 ns in a 0. 6 µm single-poly triple-metal 3. 3 V CMOS process. Furthermore, a sequential circuit of a low power 7-bit serial counter is designed and fabricated in a 0. 6 µm single-poly triple-metal 3. 3 V CMOS process. The measured operating speed was 250 MHz.

A novel design concept for pseudo-self-checking CMOS LSI is presented, where cascode voltage switch logic (CVSL) gates are utilized as two-rail logic elements accompanied by simple exclusive OR testable checker sircuits. The concept is described for both static and dynamic CVSL circuits. Fault-detection signals of the element CVSL gates are monitored by an nMOS-like OR tree, which consumes static power only when a fault is detected. The checking tree is neither dual nor two rail circuit for simplicity, the self-checking property of which is achieved by periodic testing. (we call it pseudo-selft-checking circuit) Through analytical comparison and comparison by examples, it has found that the hardware increase in terms of transistor number is less than 30%, compared with standard static CMOS design without self-checking capability.

This paper demonstrates a quick start method for Pulse-Width Controlled PLL (PWPLL). Our PLL converts the internal state into digital signals and stores them into a memory before getting into a sleep mode. The wakeup sequence reads the memory and presets the internal state so that our PLL can start the operation with close to the previously locked condition. Since the internal state includes not only the frequency control code but also the phase information, our quick start PLL locks in several clock cycles. A prototype chip fabricated in 0.18µm standard CMOS shows 50ns settling time (4 reference clock cycles), 18.5mW power consumption under 1.8V nominal supply voltage with 105µm×870µm silicon area.

A simulation study on cylindrical semiconductor devices is described, where the internal behavior of power devices are analyzed under steady-state condition with considering heat generation. In simulation, circular cylindrical coordinate is used to consider the effect of three-dimensional spreading current flow with keeping calculation time and memory as in two-dimensional simulation. Numerical model is based on the well-known set of Shockley-Roosbroeck semiconductor equations--continuity equations for carriers and Poisson's equation, along with heat flow equation. Drift-diffusion approximation of carrier transport equations is used, taking temperature field as a driving force for carriers into account. Using the cylindrical simulator, numerical analysis of power MOSFETs, which integrate zener diodes to improve the avalanche capability, has been carried out. Results showed that, a parasitic bipolar transistor turns on under forward-biased condition in a power MOSFET with a zener diode. The highest lattice temperature takes place at source edge. Under reverse-biased condition, breakdown occurs at doughnut area around the bottom of source contact (at the upper region of zener junction), and the avalanche current flows detouring the base region of parasitic bipolar transistor which implies that secondary breakdown will be suppressed. The highest lattice temperature region under reverse-biased conditions is the same as the breakdown region. Without zener diodes, on the other hand, breakdown occurs ringing about the edge of source region, and the avalanche current flows through the base region of parasitic bipolar transistor which implies that even MOSFETs may suffer from the secondary breakdown. As channel length becomes short, breakdown caused by punchthrough becomes dominant at the edge of source region.

Among the many fabrication methods for oxide superconductor films, metal organic chemical vapor deposition (MOCVD) is particularly suitable for industrial application because of its mass productivity and the low growth temperature. Therefore we have studied this technique using the horizontal cold wall furnace type MOCVD method to obtain high quality superconducting films. As the result, we have succeeded in fabricating YBa2Cu3Oy films which have high critical temperatures (over 80 K) under substrate temperatures as low as 700 without post-annealing. But, in the course of our experiments, it was found that the thicknesses of YBa2Cu3Oy films fabricated by MOCVD were not uniform. The cause of this non-uniformity is believed to be that the deposition rate exponentially falls off along the flow direction because of the decrease of the source gas concentration through the reaction. In this paper, this non-uniformity is analytically studied. It is shown that the deposition rate decrease can be controlled with a tapered inner tube, and that these theoretical results are in good agreement with the results of experiment. In addition, it is indicated that the superconducting property of the films has less dependence on substrate position as a result of the tapered inner tube.

The ultimate minimum energy of switching mechanism for MOS integrated circuits have been studied. This report elucidates the evaluation methods for minimum switching energy of instantaneous discharged mechanism after charging one, namely, recycled energy of the MOS device. Two approaches are implemented to capture this concept. One is a switching energy by the time-dependent gate capacitance (TDGC) model ; the other one by results developed by transient device simulation, which was implemented using Finite Element Method (FEM). It is understood that the non-recycled minimum swhiching energies by both approaches show a good agreement. The recycled energies are then calculated at various sub-micron gate MOS/SOI devices and can be ultra-low power of the MOS integrated circuits, which may be possible to build recycled power circuitry for super energy-saving in the future new MOS LSI. From those results, (1) the TDGC is simultaneously verified by consistent match of the non-recycled minimum switching energies; (2) the recycled switching energy is found to be the ultimate lower bound of power for MOS device; (3) the recycled switching energy can be saved up to around 80% of that of current MOS LSI.

In this paper, we propose a register file with data bypassing function. This register file bypasses data using data bypassing units instead of functional units when actual operation in functional units such as ALU is unnecessary. Applying this method to a general purpose microprocessor with benchmark programs, we demonstrate 50% power consumption reduction in functional units. Though length of bus lines increases a little due to an additional hardware in register file, as buses are not driven when data is bypassed, power consumption in bus lines is also reduced by 40% compared with the conventional architecture.

In this paper, we propose a novel gate delay time mismatch tolerant time-mode signal accumulator whose input and output are represented by a time difference of two digital signal transitions. Within the proposed accumulator, the accumulated value is stored as the time difference between the two pulses running around the same ring of a delay line, so that there is no mismatch between the periods of the two pulses, thus the output drift of the accumulator is suppressed in principle without calibrating mismatch of two rings, which is used to store the accumulated value in the conventional one. A prototype of the proposed accumulator was fabricated in 180nm CMOS. The accumulating operation is confirmed by both time and frequency domain experiments. The standard deviation of the error of the accumulating operation is 9.8ps, and compared with the previous work, the peak error over full-scale is reduced by 46% without calibrating the output drift.

This paper proposes a time-to-digital converter (TDC) utilizing the cascaded time difference amplifier (TDA) and shows measurement results with 0.18 µm CMOS. The proposed TDC operates in two modes, a wide input range mode and a fine time resolution mode. We employ a non-linearity calibration technique based on a lookup table. The wide input range mode shows 10.2 ps time resolution over 1.3 ns input range with DNL and INL of +0.8/-0.7LSB and +0.8/-0.4LSB, respectively. The fine time resolution mode shows 1.0 ps time resolution over 60 ps input range with DNL and INL of +0.9/-0.9LSB and +0.8/-1.0LSB, respectively.

This paper proposes a triangular active charge injection method to reduce resonant power supply noise by injecting the adequate amount of charge into the supply line of the LSI in response to the current consumption of the core circuit. The proposed circuit is composed of three key components, a voltage drop detector, an injection controller circuit and a canceling capacitor circuit. In addition to the theoretical analysis of the proposed method, the measurement results indicate that our proposed method with active capacitor can realize about 14% noise reduction compared with the original noise amplitude. The proposed circuit consumes 25.2 mW in steady state and occupies 0.182 mm2.

We propose a new scanning method for image signals using a tree structure of automata. The tree is scanned selectively along the signal path for realizing both lower power consumption and a kind of image compression by skipping nonactive elements. We designed the node automata along with photo-detectors of 3232 in a 7.2 mm7.2 mm chip using a 1.5µm CMOS technology. We demonstrate applications of the tree structure using its feature of selective activation; a moving picture compression using inter-frame difference, an adaptive resolution scan like human eyesight and a motion compensation as examples.

This paper demonstrates an autonomous di/dt control of power supply for margin aware operation. A di/dt on the power line is detected by a mutual inductor, the induced voltage is multiplied by Gilbert multiplier and the following low pass filter outputs a DC voltage in proportion to the di/dt. The DC voltage is compared with reference voltages, and the modes of the internal circuit is controlled depending on the comparators output. By using this scheme, the di/dt noise power can be autonomously controlled to fall within a defined range set by the reference voltages. Our experimental results show that the internal circuit oscillates between the all-active and the half-active modes, also show that the all/half ratio and the oscillation frequency changes depending on the reference voltages. It proves that our autonomous di/dt noise control scheme works as being designed.

In this paper, we present a pixel-level color image sensor with efficient ambient light suppression using a modulated RGB flashlight to support a recognition system. The image sensor employs bidirectional photocurrent integrators for pixel-level demodulation and ambient light suppression. It demodulates a projected flashlight with suppression of an ambient light at short intervals during an exposure period. In the imaging system using an RGB modulated flashlight, every pixel provides innate color and depth information of a target object for color-based categorization and depth-key object extraction. We have designed and fabricated a prototype chip with 6464 pixels using a 0.35 µm CMOS process. Color image reconstruction and time-of-flight range finding have been performed for the feasibility test.

This paper presents a new high-speed and area-efficient dual-rail PLA. The proposed circuit includes three schemes: 1) a divided column scheme (DCS), 2) a programmable sense-amplifier activation scheme (PSAS), and 3) an interdigitated column scheme (ICS). In the DCS, a column circuit of a PLA is divided and each circuit operates in parallel. This enhances the performance of the PLA, and this scheme becomes more effective as input data bandwidth increases. The PSAS is used to generate an activation pulse for sense amplifiers in the PLA. In this scheme, the proposed delay generators enable to minimize a timing margin depending on process variations and operating conditions. The ICS is used to enhance the area-efficiency of the PLA, where a method of physical compaction is employed. This scheme is effective for circuits which have the regularity in logic function such as arithmetic circuits. As applications of the proposed PLA, a comparator, a priority encoder, and an incrementor for 128-bit data processing were designed. The proposed circuit design schemes achieved a 22.2% delay reduction and a 37.5% area reduction on average over the conventional high-speed and low-power PLA in a 0.13-µm CMOS technology with a supply voltage of 1.2 V.

In this paper, a high-speed PLA based on dynamic array logic circuits with latch sense amplifiers is presented. The present circuit consists of logic cell arrays, dual-rail bit-lines, latch sense amplifiers, and control blocks. By using a charge sharing scheme and latch sense amplifiers, voltage swings of the bit-lines are reduced compared to the conventional circuits, thus a high-speed and low-power operation is achieved. The present array logic configuration can realize any logic function expressed in the sum-of-products form by using PLA structure. As an application of the proposed PLA, a 32-bit binary comparator is designed and implemented in a 0.6-µm double-poly triple-metal CMOS process. Results of HSPICE simulation show a better performance compared to the conventional circuits. Functional testing using electron beam probing shows that the present circuit operates correctly.