Among the many fabrication methods for oxide superconductor films, metal organic chemical vapor deposition (MOCVD) is particularly suitable for industrial application because of its mass productivity and the low growth temperature. Therefore we have studied this technique using the horizontal cold wall furnace type MOCVD method to obtain high quality superconducting films. As the result, we have succeeded in fabricating YBa2Cu3Oy films which have high critical temperatures (over 80 K) under substrate temperatures as low as 700 without post-annealing. But, in the course of our experiments, it was found that the thicknesses of YBa2Cu3Oy films fabricated by MOCVD were not uniform. The cause of this non-uniformity is believed to be that the deposition rate exponentially falls off along the flow direction because of the decrease of the source gas concentration through the reaction. In this paper, this non-uniformity is analytically studied. It is shown that the deposition rate decrease can be controlled with a tapered inner tube, and that these theoretical results are in good agreement with the results of experiment. In addition, it is indicated that the superconducting property of the films has less dependence on substrate position as a result of the tapered inner tube.

A new cleaning solution (FPM; HF-H2O2-H2O) was investigated in order to remove effectively metallic impurities on the silicon wafer surface. The removability of metallic impurities on the wafer surface and the concentrations of metallic impurities adsorbed on the wafer surface from each contaminated cleaning solution were compared between FPM and conventional cleaning solutions, such as HPM (HCl-H2O2-H2O), SPM (H2SO4-H2O2), DHF (HF-H2O) and APM (NH4OH-H2O2-H2O). This new cleaning solution had higher removability of metallic impurities than conventional ones. Adsorption of some kinds of metallic impurities onto the wafer surface was a serious problem for conventional cleaning solutions. This problem was solved by the use of FPM. FPM was important not only as a cleaning solution for metallic impurities, but also as an etchant. Furthemore, this new cleaning solution made possible to construct a simple cleaning system, because the concentrations of HF and H2O2 are good to be less than 1% for each, and it can be used at room temperature.

We have developed an advanced tool for dimensioning circuit-switched networks, called CNEP (Circuit-Switched Network Evaluation Program) , for effective design of digital networks. CNEP features a high-reliability network structure (node dispersion, double homing, etc) , both-way circuit operation, and circuit modularity (or big module size), all of which are critical for digital networks. CNEP also solves other dimensioning problems such as the cost difference between existing and newly installed circuits, and handles multi-hour traffic conditions, dynamic routing, and multiple-switching-unit nodes. Operations Research techniques are applied to produce exact and heuristic algorithms for these problems. Algorithms with good time-performance trade-off characteristics are chosen for CNEP.

Chemical structures of native oxides formed during wet chemical treatments of silicon surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared. Attenuated Total Reflection (FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxide and at native oxide/ silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2 solution. Based on this discovery, it was found that native oxides can be characterized by the amount of Si-H bonds in the native oxide and the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in the native oxides.

Thermal desorption spectroscopy (TDS) is applied to analyze the oxidation reactions of hydrogen-terminated Si(100) surfaces in both the heating and cooling processes after hydrogen desorption. The oxidation reaction of oxygen and water with a silicon surface after hydrogen desorption shows hysteresis in the heating and cooling processes. In the cooling process, oxidation finishes when the silicon surface is adequately oxidized to about a 10 thickness. Oxidation continues to occur at lower temperatures when the total volume of oxygen and water is too small to saturate the bare silicon surface. The reaction of water with silicon releases hydrogen at more than 500. Hydrogen does not adsorb on the silicon oxide surface. A trace amount of oxygen, less than 110-6 Torr, roughens the surface.

This paper proposes a model for learning non-parametric densities using finite-dimensional parametric densities by applying Yamanishi's stochastic analogue of Valiant's probably approximately correct learning model to density estimation. The goal of our learning model is to find, with high probability, a good parametric approximation of the non-parametric target density with sample size and computation time polynomial in parameters of interest. We use a learning algorithm based on the minimum description length (MDL) principle and derive a new general upper bound on the rate of convergence of the MDL estimator to a true non-parametric density. On the basis of this result, we demonstrate polynomial-sample-size learnability of classes of non-parametric densities (defined under some smoothness conditions) in terms of exponential families with polynomial bases, and we prove that under some appropriate conditions, the sample complexity of learning them is bounded as O((1/ε)(2r1)/2r1n(2r1)/2r(1/ε)(1/ε)1n(1/δ) for a smoothness parameter r (a positive integer), where ε and δ are respectively accuracy and confidence parameters. Futher, we demonstrate polynomial-time learnability of classes of non-parametric densities (defined under some smoothness conditions) in terms of histogram densities with equal-length cells, and we prove that under some appropriate condition, the sample complexity of learning them is bounded as O((1/ε)3/21n3/2(1/ε)(1/ε)1n(1/δ)).

This letter describes the waveform relaxation algorithm with the dynamic circuit partitioning technique based on the operation point of bipolar devices. Finally, we verify its availability for the simulation of the digital bipolar transistor circuit.

Extended form of interpolatory approximation is presented for tne n-dimensional (n-D) signals whose generalized spectrums have weighted norms smaller than a given positive number. The presented approximation has the minimum measure of approximation error among all the linear and the nonlinear approximations using the same generalized sample values.

Synchrotron radiation (SR) irradiation of amorphous SiO2 (a-SiO2) induces continuous removal of the SiO2 film without the use of etching gas. The dependence of the photostimulated evaporation rate on substrate temperature and SR intensity was measured and the reaction mechanism is discussed in detail separately for surface and bulk. Using the high material selectivity of the Sr-stimulated evaporation, a sefl-aligned process to fabricate a 0.6 µm line-and-space pattern is presented. Si surface cleaning is demonstrated as an example of application of this reaction to thin native oxide film grown by wet pretreatment. Si(100)-21 and Si(111)-77 structures were observed by reflection high energy electron diffraction (RHEED) at temperatures as low as 650. The difference between a-SiO2 and native oxide on the evaporation rate is higlighted. Epitaxial Si growth using disilane (Si2H6) gas occurs selectively in the SR-irradiated region on a Si(100) surface. Using SR irradiation in an ultrahigh vacuum, followed by residual oxide reduction by disilane, is proposed as an effective cleaning method.

A new timing driven placement method based on the fuzzy theory is proposed. In this method, the longest path delay, the chip area and the wire length can be simultaneously minimized. Introducing the probability measures of fuzzy events, falling down into the optimal solutions can be avoided.

The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (EBD) and charge to break-down (QBD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH4OH-H2O2-H2O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH4OH mixing ratio in NH4OH-H2O2-H2O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH4OH-H2O2-H2O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.

The effects of changing system parameters on job scheduling policies are studied for load balancing of multi-class jobs in a distributed computer system that consists of heterogeneous host computers connected by a single-channel communications network. A job scheduling policy decides which host should process the arriving jobs. We consider two job scheduling policies. The one is the overall optimal policy whereby jobs are scheduled so as to minimize the overall mean job response time. Tantawi and Towsley obtained the algorithm that gives the solution of the policy in the single class job environment and Kim and Kameda extended it to the multiple job class environment. The other is the individually optimal policy whereby jobs are scheduled so that every job may feel that its own expected response time is minimized. We can consider three important system parameters in a distributed computer system: the communication time of the network, the processing capacity of each node, and the job arrival rate of each node. We examine the effects of these three parameters on the two load balancing policies by numerical experiment.

This study proposes a new training method for hidden Markov model with separate vector quantization (SVQ-HMM) in speech recognition. The proposed method uses the correlation of two different kinds of features: cepstrum and delta-cepstrum. The correlation is used to decrease the number of reestimation for two features thus the total computation time for training models decreases. The proposed method is applied to Japanese language isolated dgit recognition.

Logarithmic number systems (LNS) provide a very fast computational method. Their exceptional speed has been demonstrated in signal processing and then in computer graphics. But the precision problem of LNS in computer graphics has not been fully examined. In this paper analysis is made for the problem of LNS in picture generation, in particular for circle drawing. Theoretical error analysis is made for the circle drawing. That is, some expressions are developed for the relative error variances. Then they are examined by simulation experiments. Some comparisons are also done with floating point arithmetic with equivalent word length and dynamic range. The results show that the theory and the experiments agree reasonably well and that the logarithmic arithmetic is superior to or at least comparable to the corresponding floating point arithmetic with equivalent word length and dynamic range. Those results are also verified by visual inspections of actually drawn circles. It also shows that the conversion error (from integer to LNS), which is inherent in computer graphics with LNS, does not make too much influence on the total computational error for circle drawing. But it shows that the square-rooting makes the larger influence.

Based on the Fornasini-Marchesini second model, an efficient algorithm is developed to derive the characteristic polynomial and the inverse of the system matrix from the state-space parameters. As a result, the external description of the Fornasini-Marchesini second model is clarified. A technique for designing 2-D recursive digital filters in the frequency domain is then presented by using the Fornasini-Marchesini second model. The resulting filter approximates both magnitude and group delay specifications and its stability is always guaranteed. Finally, three design examples are given to illustrate the utility of the proposed technique.

In this paper, subband image coding with symmetric biorthogonal wavelet filters is studied. In order to implement the symmetric biorthogonal wavelet basis, we use the Laplacian Pyramid Model (LPM) and the trigonometric polynomial solution method. These symmetric biorthogonal wavelet basis are used to form filters in each subband. Also coefficients of the filter are optimized with respect to the coding efficiency. From this optimization, we show that the values of a in the LPM generating kernel have the best coding efficiency in the range of 0.7 to 0.75. We also present an optimal bit allocation method based on considerations of the reconstruction filter characteristics. The step size of each subband uniform quantizer is determined by using this bit allocation method. The coding efficiency of the symmetric biorthogonal wavelet filter is compared with those of other filters: QMF, SSKF and Orthonormal wavelet filter. Simulation results demonstrate that the symmetric biorthogonal wavelet filter is useful as a basic means for image analysis/synthesis filters and can give better coding efficiency than other filters.

For the development of a practical device simulation, it is necessary to solve the large sparse linear equations with a high speed computation of direct solution method. The use of parallel computation methods to solve the linear equations can reduce the CPU time greatly. The Multi Step Diakoptics (MSD) algorithm, is proposed as one of these parallel computation methods with direct solution, which is based on Diakoptics, that is, a tearing-based parallel computation method for sparse linear equations. We have applied the MSD algorithm to device simulation. This letter describes the partition and connection schedules in the MSD algorithm. The evaluation of this algorithm is done using a massively parallel computer with distributed memory (AP1000).

This paper treats the problem of realizing high speed 2-D denominator separable digital filters. Partitioning a 2-D data plane into square blocks, filtering proceeds block by block sequentially. A fast intra-block parallel processing method was developed using block state space realization, which allows simultaneous computation of all the next block states and the outputs of one block. As the block state matrix of the filter has high sparsity, the rows and columns are interchanged respectively to reduce the matrix size. The filter is implemented by a multiprocessor system, where for each matrix's row one processor is assigned to perform the row-column vector multiplication. All processors wirk in synchronized fashion. Number of processors of this implementation are equal to the number of rows of the reduced state matrix and throughput is raised with block lengths.

This paper proposes an efficient design method of three-dimensional (3-D) recursive digital filters for video signal processing via decomposition of magnitude specifications. A given magnitude specification of a 3-D digital filter is decomposed into specifications of 1-D digital filters with three different (horizontal, vertical, and temporal) directions. This decomposition can reduce design problems of 3-D digital filters to design problems of 1-D digital filters, which can be designed with ease by conventional methods. Consequently, design of 3-D digital filters can be efficiently performed without complicated tests for stability and large amount of computations. In order to process video signal in real time, the 1-D digital filters with temporal direction must be causal, which is not the case in horizontal and vertical directions. Since the proposed method can approximate negative magnitude specifications obtained by the decomposition with causal 1-D R filters, the 1-D digital filters with temporal direction can be causal. Therefore the 3-D digital filters designed by the proposed method is suitable for real time video signal processing. The designed 3-D digital filters have a parallel separable structure having high parallelism, regularity and modularity, and thus is suitable for high-speed VLSI implementation.

Plasmaless etching using ClF3 gas has been investigated on nitride films with different composition. For the sputter deposited and thermally grown silicon nitride films containing no hydrogen, the etch rate increases and the activation energy decreases with increase of the composition ratio of silicon to nitrogen between 0.75 and 1.3. This fact indicates that the etching is likely to proceed through the reaction between Si and ClF3. The native oxide on the silicon-nitride films can also be removed with ClF3 gas. Ultra-violet light irradiation from a low pressure mercury lamp remarkably accelerates the removal of the native oxide and the etch rate of the thermally grown silicon-nitride films. For the plasma deposited films, the etch rate is strongly accelerate with increasing hydrogen content in the films, but the activation energy hardly depends on the bounded hydrogen in the films, consistent with the results for Si etching.