A transmission control protocol (TCP) using an additive increase multiplicative decrease (AIMD) algorithm for congestion control plays a leading role in advanced Internet services. However, the AIMD method shows only low link utilization in lossy networks with long delay such as satellite networks. This is because the cwnd dynamics of TCP are reduced by long propagation delay, and TCP uses an inadequate congestion control algorithm, which does not distinguish packet loss from wireless errors from that due to congestion of the wireless networks. To overcome these problems, we propose an exponential recovery (ER) TCP that uses the exponential recovery function for rapidly occupying available bandwidth during a congestion avoidance period, and an adaptive congestion window decrease scheme using timestamp base available bandwidth estimation (TABE) to cope with wireless channel errors. We simulate the proposed ER-TCP under various test scenarios using the ns-2 network simulator to verify its performance enhancement. Simulation results show that the proposal is a more suitable TCP than the several TCP variants under long delay and heavy loss probability environments of satellite networks.

Although there have been enormous investments into English education all around the world, not many differences have been made to change the English instruction style. Considering the shortcomings for the current teaching-learning methodology, we have been investigating advanced computer-assisted language learning (CALL) systems. This paper aims at summarizing a set of POSTECH approaches including theories, technologies, systems, and field studies and providing relevant pointers. On top of the state-of-the-art technologies of spoken dialog system, a variety of adaptations have been applied to overcome some problems caused by numerous errors and variations naturally produced by non-native speakers. Furthermore, a number of methods have been developed for generating educational feedback that help learners develop to be proficient. Integrating these efforts resulted in intelligent educational robots – Mero and Engkey – and virtual 3D language learning games, Pomy. To verify the effects of our approaches on students' communicative abilities, we have conducted a field study at an elementary school in Korea. The results showed that our CALL approaches can be enjoyable and fruitful activities for students. Although the results of this study bring us a step closer to understanding computer-based education, more studies are needed to consolidate the findings.

In this paper, a novel framework for extracting visual feature-based keyword relationships from an image database is proposed. From the characteristic that a set of relevant keywords tends to have common visual features, the keyword relationships in a target image database are extracted by using the following two steps. First, the relationship between each keyword and its corresponding visual features is modeled by using a classifier. This step enables detection of visual features related to each keyword. In the second step, the keyword relationships are extracted from the obtained results. Specifically, in order to measure the relevance between two keywords, the proposed method removes visual features related to one keyword from training images and monitors the performance of the classifier obtained for the other keyword. This measurement is the biggest difference from other conventional methods that focus on only keyword co-occurrences or visual similarities. Results of experiments conducted using an image database showed the effectiveness of the proposed method.

This letter proposes an efficient Location-Aware Social Routing (LASR) scheme for Delay Tolerant Networks (DTNs). LASR makes forwarding decisions based on a new metric which uses location information to reflect the node relations and community structure. Simulation results are presented to support the effectiveness of our scheme.

A design of dual band amplifier using composite right/left handed (CRLH) transmission line structure is described. First, two single-band matching networks are designed for two frequencies, and they are synthesized into one dual band matching network. It is shown that CRLH transmission lines with arbitrary dual frequencies and dual electrical lengths can be designed. The CRLH transmission line section for the dual band matching network is implemented by lumped inductors and capacitors as the left handed (LH) section, and normal transmission line elements as the right handed (RH) section. As an example, a dual band amplifier for 1800 MHz and 2300 MHz is designed and measured. The simulated and measured performances well verify the proposed design by showing good matching and gain responses at the desired frequencies.

In this paper, a fifth order curer low-pass filter using as switched-capacitor (SC) architecture is proposed and fabricated with TSMC 0.18 µm CMOS process. A fully differential SC is adopted via the bilinear transform of the corresponding analogue RLC passive prototype. To reach the largest possible input dynamic range and save chip area, the method of dynamic range scaling and minimum capacitor scaling is used. Measured results show that the proposed filter achieves a pass-band of 12.1 MHz with a sampling rate of 100 MHz, a SFDR of 50 dB, a stop-band attenuation greater than 50 dB and a power consumption of 48.5 mW at 1.8 V power supply. Including pads, the chip area occupies 1.515 (1.391.09) mm2. This paper has the feature of low noise, excellent linearity of the filter, and high stability. The experimental results show that it has perfect performance for WiMAX applications and standard is recommended.

Small-world is a common property existing in many real-life social, technological and biological networks. Small-world networks distinguish themselves from others by their high clustering coefficient and short average path length. In the past dozen years, many probabilistic small-world networks and some deterministic small-world networks have been proposed utilizing various mechanisms. In this Letter, we propose a new deterministic small-world network model by first constructing a binary-tree structure and then adding links between each pair of brother nodes and links between each grandfather node and its four grandson nodes. Furthermore, we give the analytic solutions to several topological characteristics, which shows that the proposed model is a small-world network.

Clustering technology is very important in ad hoc networks and sensor networks from the view point of reducing the traffic load and energy consumption. In this paper, we propose a new structure formation mechanism as a tool for clustering. It meets the key clustering requirements including the use of an autonomous decentralized algorithm and a consideration of the situation of individual nodes. The proposed mechanism follows the framework of autonomous decentralized control based on local interaction, in which the behavior of the whole system is indirectly controlled by appropriately designing the autonomous actions of the subsystems. As an application example, we demonstrate autonomous decentralized clustering for a two-dimensional lattice network model, and the characteristics and adaptability of the proposed method are shown. In particular, the clusters produced can reflect the environmental situation of each node given by the initial condition.

In this paper, we propose an interleaving updating framework of disparity and confidence map (IUFDCM) for stereo matching to eliminate the redundant and interfere information from unreliable pixels. Compared with other propagation algorithms using matching cost as messages, IUFDCM updates the disparity map and the confidence map in an interleaving manner instead. Based on the Confidence-based Support Window (CSW), disparity map is updated adaptively to alleviate the effect of input parameters. The reassignment for unreliable pixels with larger probability keeps ground truth depending on reliable messages. Consequently, the confidence map is updated according to the previous disparity map and the left-right consistency. The top ranks on Middlebury benchmark corresponding to different error thresholds demonstrate that our algorithm is competitive with the best stereo matching algorithms at present.

In this letter, we propose a novel resource allocation scheme to enhance downlink system performance for orthogonal frequency division multiple access (OFDMA) and time division duplex (TDD) based femtocell networks. In the proposed scheme, the macro base station (mBS) and femto base stations (fBSs) service macro user equipments (mUEs) and femto user equipments (fUEs) in inner and outer zones in different periods to reduce interference substantially. Simulations show the proposed scheme outperforms femtocell networks with fractional frequency reuse (FFR) systems in terms of the system capacity and outage probability for mUEs and fUEs.

We have studied resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes. By sweeping bias to the top Pt electrode, non-polar type resistance switching was observed after a forming process. In comparison to RF sputtered TiOx case, significant small current levels were obtained in both the high resistance state (HRS) and the low resistance state (LRS). And, even with decreasing SiOx thickness down to 8 nm from 40 nm, the ON/OFF ratio in resistance-switching between HRS and LRS as large as 103 was maintained. From the analysis of current-voltage characteristics for Pt/SiOx on p-type Si(100) and n-type Si(100), it is suggested that the red-ox (REDction and OXidation) reaction induced by electron fluence near the Pt/SiOx interface is of importance for obtaining the resistance-switching behavior.

In this paper, Source/Drain (S/D) engineering for high performance (HP) Vertical MOSFET (V-MOSFET) in 3Xnm generation and its beyond is investigated, by using gradual S/D profile while degradation of driving current (ION) due to the parasitic series resistance (Rpara) is minimized through two-dimensional device simulation taking into account for gate-induced-drain-leakage (GIDL). In general, it is significant to reduce spreading resistance in the case of conventional Planar MOSFET. Therefore, in this study, we focused and analyzed the abruptness of diffusion layer that is still importance parameter in V-MOSFET. First, for improving the basic device performance such as subthreshold swing (SS), ION, and Rpara, S/D engineering is investigated. The dependency of device performance on S/D abruptness (σS/D) for various Lightly Doped Drain Extension (LDD) abruptness (σLDD) is analyzed. In this study, Spacer Length (LSP) is defined as a function of σS/D. As σS/D becomes smaller and S/D becomes more abrupt, LSP becomes shorter. SS depends on the σS/D rather than the σLDD. ION has the peak value of 1750 µA/µm at σS/D = 2 nm/dec. and σLDD=3 nm/dec. when the silicon pillar diameter (D) is 30 nm and the gate length (Lg) is 60 nm. As σS/D becomes small, higher ION is obtained due to reduction of Rpara while SS is degraded. However, when σS/D becomes too small in the short channel devices (Lg = 60 nm and Lg = 45 nm), ION is degraded because the leakage current due to GIDL is increased and reaches IOFF limit of 100 nA/µm. In addition, as σLDD becomes larger, larger ION is obtained in the case of Lg = 100 nm and Lg = 60 nm because channel length becomes shorter. On the other hand, in the case of Lg = 45 nm, as σLDD becomes larger, ION is degraded because short channel effect (SCE) becomes significant. Next, the dependency of the basic device performance on D is investigated. By slimming D from 30 nm to 10 nm, while SS is improved and approaches the ideal value of 60 mV/Decade, ION is degraded due to increase of on-resistance (Ron). From these results, it is necessary to reduce Rpara while IOFF meets limit of 100 nA/µm for designing S/D of HP V-MOSFET. Especially for the V-MOSFET in the 1Xnm generation and its beyond, the influence of the Rpara and GIDL on ION becomes more significant, and therefore, the trade-off between σS/D and ION has a much greater impact on S/D engineering of V-MOSFET.

Acoustic data transmission is a technique which embeds data in a sound wave imperceptibly and detects it at a receiver. The data are embedded in an original audio signal and transmitted through the air by playing back the data-embedded audio using a loudspeaker. At the receiver, the data are extracted from the received audio signal captured by a microphone. In our previous work, we proposed an acoustic data transmission system designed based on phase modification of the modulated complex lapped transform (MCLT) coefficients. In this paper, we propose the spectral magnitude adjustment (SMA) technique which not only enhances the quality of the data-embedded audio signal but also improves the transmission performance of the system.

Switch-and-stay combining (SSC) is a simple diversity technique where a single radio frequency (RF) chain is connected to one of several antenna branches and stays there if the channel quality is satisfied or otherwise switches to a new branch. Compared with Selection Combining (SC), SSC requires less overhead in channel estimation and antenna selection feedback. In this paper, we analyze the performance of SSC in a time-correlated flat fading channel and with causal channel state information. We derive the general expressions for the distribution of the output signal-to-noise ratio (SNR), outage rate and average bit error rate (ABER) and then the analytical results are compared with the simulation results under the Jakes Rayleigh fading channel. Our results show that (1) For slowly varying channels, L branch SSC can achieve the full diversity order and the same outage rate as SC; (2) Increasing the number of antenna branches can improve the performance of SSC, however, the gain from adding antennas diminishes quickly as the channel variation speed increases. Moreover, to avoid the complexity in optimizing the fixed threshold, we also propose a simple adaptive SSC scheme which has almost the same ABER as the SSC with optimized fixed threshold.

In this paper, the authors focus on upstream transmission in TDMA-based IEEE 802.16j and propose two time slot assignment algorithms to decrease end-to-end transmission latency. One of the proposed algorithms assigns time slots considering the hop count from a gateway node, and the other takes the path from the relay node to the gateway node into account. In addition, a restriction in assigning time slots is introduced to reduce the delay at each relay node. The algorithms with the restriction assign later time slots considering the time slot order of links connecting a relay node. The performance of the proposed algorithms is evaluated through simulation experiments from the viewpoints of frame size and end-to-end transmission latency, and it is confirmed that the proposed algorithms achieve small transmission latency regardless of packet generation rate in the network, and decrease the transmission latency by up to 70% compared with the existing algorithm.

Most of the IP mobility management schemes based on the IETF's MIPv6 may not be suitable for delay-sensitive vehicular applications since there will be frequent service disruptions as the moving vehicles frequently change their points of wireless network attachment. This paper presents a fast IP mobility management scheme for vehicular networks where multiple wireless network interfaces are used to perform fast handovers without handover latency or packet loss. In order to do this, the IETF standard HMIPv6 has been extended, where multiple simultaneous tunnels between the HMIPv6 mobility anchor point (MAP) and the mobile gateway are dynamically constructed. We have designed the architecture for a mobile gateway for supporting multiple tunnels, the structure of the extension MAP (E-MAP), and the signaling procedure to achieve fast IP handover in vehicular networks. Both mathematical analysis and simulation have been done for performance evaluation. The results show that the proposed scheme is superior to HMIPv6 and MIPv6 with regard to handover latency and packet loss as the vehicle moves between different wireless network cells at high speed.

This paper presents the evaluation of the L-2L de-embedding method with misalignment of the contact position. The issues of misalignment of the contact position are investigated. The analysis of misalignment in the L-2L de-embedding procedure is performed. Two comparisons are carried out to verify the error of the L-2L de-embedding method. The calculation percent error in quality factor of the transmission line becomes up to 9.0%, while the transistor S-parameter error percentage becomes up to 21% at 60 GHz in the experimental results. The results show that the measurement errors, caused by the misalignment of the contact position, should be considered carefully.

In this paper, we fabricated a gate-all-around bandgap-engineered (BE) silicon-oxide-nitride-oxide-silicon (SONOS) and silicon-oxide-high-k-oxide-silicon (SOHOS) flash memory device with a vertical silicon pillar type structure for a potential solution to scaling down. Silicon nitride (Si3N4) and hafnium oxide (HfO2) were used as trapping layers in the SONOS and SOHOS devices, respectively. The BE-SOHOS device has better electrical characteristics such as a lower threshold voltage (VTH) of 0.16 V, a higher gm.max of 0.593 µA/V and on/off current ratio of 5.76108, than the BE-SONOS device. The memory characteristics of the BE-SONOS device, such as program/erase speed (P/E speed), endurance, and data retention, were compared with those of the BE-SOHOS device. The measured data show that the BE-SONOS device has good memory characteristics, such as program speed and data retention. Compared with the BE-SONOS device, the erase speed is enhanced about five times in BE-SOHOS, while the program speed and data retention characteristic are slightly worse, which can be explained via the many interface traps between the trapping layer and the tunneling oxide.

In this paper, we designed and fabricated large scale micro-light-emitting-diode (LED) arrays and silicon driver for single chip device for realizing as prototypes of heterogeneous optoelectronic integrated circuits (OEICs). The large scale micro-LED arrays were separated by a dry etching method from mesa structure to 16,384 pixels of 128 128, each with a size of 15 µm in radius. Silicon driver was designed the additional bonding pad on each driving transistor for bonding with micro-LED arrays. Fabricated micro-LED arrays and driver were flip-chip bonded using anisotropic conductive adhesive.

In the current study, stress-induced capacitance determined by direct measurement on MOSFETs was compared with that determined by indirect simulation through the delay of CMOS ring oscillators (ROs) fabricated side by side with MOSFETs. External compressive stresses were applied on <110> silicon-on-insulator (SOI) n-/p-MOSFETs with the ROs in a longitudinal configuration. The measured gate capacitance decreased as the compressive stress on SOI increased, which agrees with the result of the capacitance difference between measured and simulated delay of the ROs. The oscillation frequency shift of the ROs should mainly be attributed to oxide capacitance, aside from the change in mobility of the n-/p-MOSFETs. The result suggests that the stress-induced gate capacitance of partially depleted MOSFETs is an important factor for the capacitance shift in a circuit and that ROs can be used in a vehicle to determine mechanical stress-induced gate capacitance in MOSFETs.