A probing front end circuit (PFE) senses and digitizes voltage noises at in-circuit locations on such as power supply wiring and substrate taps in a chip, with the simplest circuit construction only with a source follower or a unity gain buffer, followed by a latch comparator. The PFE with 2.5V I/O transistors in a 65nm CMOS technology node demonstrates 9.0 ENOB and 60.7dB SFDR in equivalent sampling at 1.0Gs/s, for a sinusoidal waveform of 10MHz with 200mV peak-to-peak amplitude. Behavioral modeling of an entire waveform acquisition system using PFEs includes the statistical variations of reference voltage and sampling timing. The simulation quantitatively explains the measured dynamic properties of on-chip noise monitoring, such as the AC response in SNDR and digitizing throughputs, with the clear dependency on the frequency and amplitude of input waveforms.

Substrate noise coupling has been seriously concerned in the design of advanced analog and radio frequency (RF) integrated circuits (ICs). This paper reviews recent advancements in the modeling, analysis, and evaluation of substrate noise coupling at IC chip level. Noise generation from digital circuits and propagation to the area of analog circuits are clearly visualized both by full-chip simulation as well as by on-chip measurements, for silicon test vehicles. The impacts of substrate noise coupling are also in-depth discussed at device, circuit, as well as system levels. Overall understanding of substrate noise coupling will then provide the basics for highly reliable design of analog and RF ICs.

In-place AC measurements of the signal gain and substrate sensitivity of differential pair transistors of an analog amplifier are combined with DC characterization of the threshold voltage (Vth) of the same transistors. An on-chip continuous time waveform monitoring technique enables in-place matrix measurements of differential pair transistors with a variety of channel sizes and geometry, allowing the wide coverage of experiments about the transistor-level physical layout dependency of substrate noise response. A prototype test structure uses a 90-nm CMOS technology and demonstrates the geometry-dependent variation of substrate sensitivity of transistors in operation.

Progress of roles and schemes of calibration techniques in data converters are reviewed. Correction techniques of matching error and nonlinearity in analog circuits have been developed by digital assist using high-density and low-power digital circuits. The roles of the calibration are not only to improve accuracy but also to reduce power dissipation and chip area. Among various calibration schemes, the background calibration has significant advantages to achieve robustness to fast ambient change. Firstly the nonlinearity calibrations for pipeline ADCs are reviewed. They have required new solutions for redundancy of the circuits, an error estimation algorithm and reference signals. Currently utilizing the calibration techniques, the performance of 100 Msps and 12 bit has been achieved with 10 mW power dissipation. Secondly the background calibrations of matching error in flash ADC and DAC with error feedback to the analog circuits are described. The flash ADC utilizes the comparator offset correction with successive approximation algorithm. The DAC adopts a self current matching scheme with an analog memory. Measured dissipation power of the ADC is 0.38 mW at 300 MHz clock. Effects of the background calibration to suppress crosstalk noise are also discussed.

An arbitrary noise generator (ANG) is based on time-series charging of divided parasitic capacitance (TSDPC) and emulates power supply noise generation in a CMOS digital circuit. A prototype ANG incorporates an array of 32 x 32 6-bit TSDPC cells along with a 128-word vector memory and occupies 2 x 2 mm2 in a 65 nm 1.2 V CMOS technology. Digital noise emulation of functional logic cores such as register arrays is demonstrated with chip-level waveform monitoring at power supply, ground, as well as substrate nodes.

Capacitance charging modeling efficiently captures power supply currents in dynamic operations of a CMOS digital circuit and accurately expresses their interaction with on- and off-chip impedance networks. Derivation of such models is generally defined for combinational and sequential logic functions. Simulated substrate and power noises due to sequential logic operation show clear dependency on the size of circuits as well as the internal activity of logic gates. Furthermore, it is experimentally found that the inclusion of impedance networks of a silicon substrate, a package, and an evaluation board, is substantially effective to improve the accuracy of noise analysis. Quantitative correlation among simulation with on-chip noise measurements is demonstrated in a 90-nm 1.2-V CMOS technology.

Substrate noise analysis has become increasingly important in recent LSI design. This is because substrate noise, which affects PLLs, causes jitter that results in timing error. Conventional analysis techniques of substrate noise are, however, impractical for large-scale designs that have hundreds of millions of transistors because the computational complexity is too huge. To solve this problem, we have developed a fast substrate noise analysis technique for large-scale designs, in which a chip is divided into multiple domains and the circuits of each domain are reduced into a macro model. Using this technique, we have designed a processor chip for use in the supercomputer (die size: 20 mm 21 mm, frequency: 3.2 GHz, transistor count: 350M). Computation time with this design is five times faster than that with a 1/3000 scale design using a conventional technique, while resulting discrepancy with measured period jitter is less than 15%.

A multi-path structure is proposed for reduction in effect of digital substrate noise which degrades analog circuit performance. As an example low-pass filters are implemented in a 0.18-µm CMOS process. 11-dBm reduction in digital substrate noise is achieved as compared with a conventional structure.

This paper describes a method of reducing substrate noise and random variability utilizing a self-adjusted forward body bias (SA-FBB) circuit. To achieve this, we designed a test chip (130 nm CMOS 3-well) that contained an on-chip oscilloscope for detecting dynamic noise from various frequency noise sources, and another test chip (90 nm CMOS 2-well) that contained 10-M transistors for measuring random variability tendencies. Under SA-FBB conditions, it reduced noise by 35.3-69.8% and reduced random variability σ (Ids) by 23.2-57.9%.

Band connections employed in active cancellation circuits for effective reduction of digital substrate noise are proposed. An almost-odd-symmetrical noise characteristic is utilized for canceling out noises. Advancing this idea, interlaced connections of four bands are also proposed. Excess cancellation by those bands is more effective for noise reduction in a guard ring than a cancellation by two bands. Use of L-shaped bands on the basis of the interlaced connection suppresses the noise more. Simulation and experimental results show that the proposed band connections reduce the noise.

Substrate-coupling equivalent circuits can be derived for arbitrary isolation structures by F-matrix computation. The derived netlist represents a unified impedance network among multiple sites on a chip surface as well as internal nodes of isolation structures and can be applied with SPICE simulation to evaluate isolation strengths. Geometry dependency of isolation attributes to layout parameters such as area, width, and location distance. On the other hand, structural dependency arises from vertical impurity concentration specific to p+/n+ diffusion and deep n-well. Simulation-based prototyping of isolation structures can include all these dependences and strongly helps establish an isolation strategy against high-frequency substrate coupling in a given technology. The analysis of isolation strength provided by p+/n+ guard ring, deep n-well guard ring as well as deep n-well pocket well explains S21 measurements performed on high-frequency test structures targeting 5 GHz bandwidth, that was formed in a 0.25-µm CMOS high frequency.

This paper demonstrates a feedforward active substrate noise cancelling technique using a power supply di/dt detector. Since the substrate is usually tied with the ground line with a low impedance, the substrate noise is closely related to the ground bounce which is proportional to the di/dt when inductance is dominant on the ground line impedance. Our active cancelling detects the di/dt of the power supply, and injects an anti-phase current into the substrate so that the di/dt-proportional substrate noise is cancelled out. Our first trial shows that 34% substrate noise reduction is achieved on our test circuit, and the theoretical analysis shows that the optimized canceller design will enhance the substrate noise suppression ratio up to 56%.

Dynamic power supply noise measurements with resolutions of 100 ps and 100 µV for 100 ns and 1 V ranges are performed at various operating frequencies up to 400 MHz on multiple points in a low power register file and SRAM for product chips by using on-chip noise detectors. The measurements show that the noises are clearly emphasized in frequency domains by the interaction of circuit operations and bias network's AC transfers. A proposed design methodology that covers a fast SPICE simulator and parasitic extractors can predict dynamic noises from power supplies, ground, well, and substrate interactions to provide robustness to the design of low power body bias control circuitry.

Crosstalk from digital to analog circuits can be causative of operation fails in analog-digital mixed LSIs. This paper describes modeling techniques and simulation strategies of the substrate coupling noise. A macroscopic substrate noise model that expresses the noise as a function of logic state transition frequencies among digital blocks is proposed. A simulation system based on the model is implemented in the mixed signal simulation environment, where performance degradation of the 2nd order ΔΣADC coupled to digital noise sources is clearly simulated. These results indicate that the proposed behavioral modeling approach allows practicable full chip substrate noise simulation measures.

A method called "active guard band filtering" is proposed for reducing substrate noise in analog and digital mixed-signal integrated circuits. A noise cancellation signal having an inverse value to the substrate noise is actively input into a guard band to suppress the substrate noise. An operational amplifier produces the noise cancellation signal based upon the substrate noise detected by one guard band and feeds this signal through another quard band into the substrate. This is done within the amplifier feedback loop, which includes the guard bands and the substrate. The noise suppression effect was measured by using 0.8µm CMOS test chip. Using active guard band filtering suppressed substrate noise to -40 dB of the original non-canceled noise level at 8 MHz. The noise suppression effect was also observed at frequencies up to 20MHz, with an external operational amplifier. The influence of parasitic impedance was found to be a key factor in noise suppression. An active guard band filter with an on-chip noise cancellation circuit will be even more effective for high frequencies, because it eliminates parasitic impedance due to external components.

Digital-switching noise coupled into sensitive analog circuits is a critical problem in large-scale integration of mixed analog and digital circuits. This paper describes noise coupling of this kind, especially, through the substrate in CMOS integrated circuits, and reviews recent technical solutions to this noise problem. Simplified models have been developed to simulate the substrate coupling rapidly and accurately. A method using a CMOS comparator was proposed for measuring the effects of substrate noise, and equivalent waveforms of actual substrate noise were obtained. A circuit tecnique, called active guard band filtering, that controls the noise source is a new approach to substrate noise decoupling. CAD methods for handling substrate-coupled switching noise are making design verification possible for practical mixed-signal LSIs.