This paper describes an implementation of the finite element method to examine the effects of actual lip shape on the sound radiation. A three-dimensional finite element approach by Galerkin method was used. The accuracy of the calculation of finite element method for the sound radiation was tested by comparing it with the exact solutions for a circular piston radiator on an infinite baffle. Using a set of finite element models of the vocal tract, we calculated the responses to a pure tone input and the sound fields over the frequency range of 100 Hz-7 kHz. The transfer functions are examined in detail for vowels /a/ and /i/ when the shape of the actual lips is simplified as a planeradiation surface. The effects of lip shape on the distribution of sound pressures are also shown in both the vocal tract and the surrounding space of the mouth opening.

The power transfer characteristics of a symmetric nonlinear directional coupler (NLDC) are analyzed rigorously using the beam propagation method based on the finite difference scheme. The NLDC consists of two linear waveguides separated by a Kerr-like nonlinear gap layer. The change of nonlinear refractive index along the coupler is precisely evaluated by making use of the second-order iteration procedure with respect to a small propagation length. For the incidence of TE0 mode of the isolated linear waveguide, the highly accurate numerical results are obtained for the behavior of power transfer, and the coupling length and critical power for optical switching. The dependencies of the coupling length and critical power on the width of the gap layer and the input power levels are discussed, compared with those predicted by the coupled-mode approximations.

Naturalness of expressions reflects various pragmatic factors in addition to grammatical factors. In this paper, we discuss relations between expressions and two pragmatic factors: a point fo view of speaker and a hierarchical relation among participants. Degree of empathy" and class" is used to express these pragmatic factors as one-dimensional notion. Then inequalities and equalities of them become conditions for selecting natural expressions. The authors of this paper formulate conditions as principles about lexical and syntactical constraints, and have implemented a sentence generation grammar using the unification grammar formalism.

Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.

It has become more important to shorten development periods of high performance computer systems and their LSIs. During debugging of computer prototypes, logic designers request very frequent LSI refabrication to change logic circuits and to add some functions in spite of their extensive logic simulation by several GFLOPS supercomputers. To meet these demands, an automated on-chip direct wiring modification system has been developed, which enables wire-cut and via-digging by a precise focused ion beam machine, and via-filling and jumper-writing by a laser CVD machine, directly on pre-redesign (original) chips. This modification system was applied to LSI reworks during the development of Hitachi large scale computers M-880 and S-3800, and contributed to shorten system debugging period by four to six months.

An exact analysis for magnetostatic surface wave excitation by a single microstrip is presented. Conventional approaches for such an excitation problem do not explain experimental results in a reasonable manner. The theory proposed here explains radiation resistances obtained by experiments, owing to having considered the edge conditions and an expansion form of excitation current on the microstrip properly.

A simulation study on cylindrical semiconductor devices is described, where the internal behavior of power devices are analyzed under steady-state condition with considering heat generation. In simulation, circular cylindrical coordinate is used to consider the effect of three-dimensional spreading current flow with keeping calculation time and memory as in two-dimensional simulation. Numerical model is based on the well-known set of Shockley-Roosbroeck semiconductor equations--continuity equations for carriers and Poisson's equation, along with heat flow equation. Drift-diffusion approximation of carrier transport equations is used, taking temperature field as a driving force for carriers into account. Using the cylindrical simulator, numerical analysis of power MOSFETs, which integrate zener diodes to improve the avalanche capability, has been carried out. Results showed that, a parasitic bipolar transistor turns on under forward-biased condition in a power MOSFET with a zener diode. The highest lattice temperature takes place at source edge. Under reverse-biased condition, breakdown occurs at doughnut area around the bottom of source contact (at the upper region of zener junction), and the avalanche current flows detouring the base region of parasitic bipolar transistor which implies that secondary breakdown will be suppressed. The highest lattice temperature region under reverse-biased conditions is the same as the breakdown region. Without zener diodes, on the other hand, breakdown occurs ringing about the edge of source region, and the avalanche current flows through the base region of parasitic bipolar transistor which implies that even MOSFETs may suffer from the secondary breakdown. As channel length becomes short, breakdown caused by punchthrough becomes dominant at the edge of source region.

This paper describes a new free-space optical switch structure based on cascaded beam shifters (each consists of a liquid-crystal polarization controller array and a birefringent plate). This structure comprises 2-input, 2-output switching elements that are locally connected by links. It is applicable to a variety of switching networks, such as a Clos network. The switching network based on this structure is an analog switch that is transparent to signal format, bit rate, and modulation type, so it can handle various types of optical signals. Theoretical feasibility studies indicate that compact large-scale switches (i.e., 100-1000 ports) with relay lens systems can be implemented using beam shifters with a 0.4-dB insertion loss and a 30-dB extinction ratio. Experimental feasibility studies indicate that a 1024-cell beam shifter module with a 0.5-dB insertion loss and a 23-dB extinction ratio is possible at present. An alignment-free assembly technique using precise alignment guides is also confirmed. An experimental 8-stage, 1024-input 256-output concentrator shows low insertion loss characteristics (6.8dB on average) owing to the low-loss beam shifters and the alignment-free assembly technique. Practical switching networks mainly require the improvement of the extinction ratio of the beam shifter module and the development of a fiber pig-tailing technique. This switch structure is applicable to transparent switching networks such as subscriber line concentrators and inter-module connectors.

An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a post-processing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90% accuracy, and it took only few minutes CPU time on a SUN/SPARC2 to generate EPROM/Flash Vt shift curves.

A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.

In order to achieve an efficient and reliable prediction of device performance by numerical device simulation, a discretization mesh must be generated with an adequate, but not redundant, density of mesh points. However, manual mesh optimization requires user's trial and error. This task annoys the user considerably, especially when the device operation is not well known, or the required mesh-point density strongly depends on the bias condition, or else the manipulation of the mesh is difficult as is expected in 3D. Since these situations often happen in designing advanced VLSI devices, it is highly desirable to automatically optimize the mesh. Adaptive meshing techniques realize automatic optimization by refining the mesh according to the discretization error estimated from the solution. The performance of mesh optimization depends on a posteriori error indicators adopted to evaluate the discretization error. In particular, to obtain a precise terminal-current value, a reliable error indicator for the current continuity equation is necessary. In this paper, adaptive meshing based on the current continuity equation is investigated. A heuristic error indicator is proposed, and a methodology to extend a theoretical error indicator proposed for the finite element method to the requirements of device simulation is presented. The theoretical indicator is based on the energy norm of the flux-density error and is applicable to both Poisson and current continuity equations regardless of the mesh-element shape. These error indicators have been incorporated into the adaptive-mesh device-simulator HFIELDS, and their practicality is examined by MOSFET simulation. Both indicators can produce a mesh with sufficient node density in the channel region, and precise drain current values are obtained on the optimized meshes. The theoretical indicator is superior because it provides a better optimization performance, and is applicable to general mesh elements.

An eye-contact technique using a blazed half-transparent mirror (BHM) is developed. This half-transparent mirror (HM) consists of an in-line array of many slanting micro-HMs. We fabricated a prototype system and confirmed the principle of this technique. The resolution of an image reflected by a BHM was simulated to determine how to improve the image quality and the factors degrading the resolution were clarified.

A new kind of optical local area network (LAN), using a demand assign wavelength division multiple access (DA-WDMA) scheme, has been proposed. The proposed LAN consists of two parts; an ordinary standardized LAN and an overlaid network using wavelength division (WD) channels. The proposed network can provide bit-rate independent communication channels on the ordinary LAN without limiting the capacities for the other channels. It also exhibits upgrade possibilities from present standardized networks. An access controller, which consists of software in addition to the ordinary LAN controller, a digital signal processor (DSP) etc., was developed for DA-WDMA control. The network node operation has been demonstrated using guided-wave acousto-optic (AO) mode converters as a tunable wavelength add-drop multiplexer (ADM).

An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.

A simulation model for arsenic diffusion in polycrystalline silicon has been developed considering dynamic dopant clustering and polysilicon grain growth kinetics tightly coupled with dopant diffusion and segregation. It was assumed that the polysilicon layer consists of column-like grains surrounded by thin grain-boundaries, so that one dimensional description is permissible for dopant diffusion. The dynamic clustering model was introduced for describing arsenic activation in polysilicon grains, considering the solubility limit increase for arsenic in a polysilicon. For a grain-growth calculation, a previous formula was modified to include a local concentration dependence. The simulation results show that these effects are significant for a high dose implantation case.

A software package has been developed for simulating complex silicon and heterostructure devices in 3D. Device geometries are input with a mouse-driven geometric modeler, thus simplifying the definition of complex 3D shapes. Single components of the device are assembled through boolean operations. Tetrahedra are used for grid generation, since any plane-faced geometry can be tessellated with tetrahedra, and point densities can be adapted locally. The use of a novel octree-like data structure leads to oriented grids where desirable. Bad angles that prevent the convergence of the control volume integration scheme are eliminated mostly through topological transformations, thus avoiding the insertion of many redundant grid points. The discretized drift-diffusion equations are solved with an iterative method, using either a decoupled (or Gummel) scheme, or a fully coupled Newton scheme. Alternatively, generated grids can be submitted to a Laplace solver in order to calculate wire capacitances and resistances. Several examples of results illustrate the flexibility and effectiveness of this approach.

This paper is concerned with an ITS designed for augmenting a student's capability in problem solving. Discussions are concentrated on helping students acquire strategic knowledge and assisting them to build it in their heads. In this paper, many kinds of strategies are treated from a unified point of view. Based on this consideration, a teaching paradigm of strategic knowledge is presented. The paradigm is realized in an ITS as a training environment for strategic knowledge. Assisting students to learn strategic knowledge, the system sets up an appropriate environment and gives them some appropriate advice in each environment. It is realized as a function of giving them appropriate problems and hints about it. In general, strategic knowledge is a kind of heuristics so that it is not easy to describe their application conditions deterministically and explicitly. For this reason, an ITS for strategic knowledge is required to be designed so as to cover not only the case where expertise is represented explicitly as an executable model but also the case where it is represented only implicitly. To realize this teaching paradigm, situation-dependent knowledge called reminding pattern is prepared in the system. It is represented by a triple of a strategy, a situation, and a key symbol in the situation. It denotes that the key usually reminds students of the strategy in the situation. The system gives students problems including positive/negative examples of applications of each strategy in its problem solving process and hints which remind them of an appropriate strategy and makes them resume the problem solving when they fall into an impasse. In this paper, the structure of the system realizing this teaching paradigm is explained in the domain of proving propositional formulas.

This paper presents a hypermedia English learning environment, called HELEN (Hypermedia Environment for Learning ENglish), which integrates traditional methods of learning English, audio-visual facilities for both listening and watching and intelligent tutoring functions for suitable advice to each learner based on natural language understanding. HELEN consists of an authoring stage and a learning stage. In order to support multimodal learning, at the authoring stage HELEN gets voice and video scenes from a video disc and text sentences from an image scanner, then analyzes the sentences both syntactically and semantically by a natural language processing module so that necessary information for conversation, error identification and example sentence retrieval may be extracted. Thus at the learning stage, HELEN is able to aid learners to learn hearing, reading, writing, watching, consulting and noting. Besides these facilities HELEN also supports two facilities for tests in English: One is the test facilities of dictating sentences and the other is QA (questions and answers) facilities to make learner's comprehension state clear. According to the results of these tests, HELEN identifies learner's illegal usage of syntax or semantics, and piles them in a student model. The illegal usage in the model is used as resources for generating questions, treating errors, determining topics, etc. The main part of this paper concerns with the representation method for syntax and semantics of correct and incorrect sentences.

This paper discusses the design of an ITS to realize a load-oriented tutoring to enhance the student's explanation understanding. In the explanation understanding, it is to be hoped that a student not only memorizes the new information from an explanation, but also relates the acquired information with his/her own knowledge to recognize what it means. This relating process can be viewed as the one in which the student structures his/her knowledge with the explanation. In our ITS, we regard the knowledge-structuring activities as the explanation understanding. In this paper, we propose an explanation, called a load-oriented explanation, with the intention of applying a load to the student's knowledge-structuring activities purposefully. If the proper load is applied, the explanation can induce the student to think by himself/herself. Therefore he/she will have a chance of gaining the deeper understanding. The important point toward the load-oriented explanation generation is to control the load heaviness appropriately, which a student will bear in understanding the explanation. This requires to estimate how an explanation promotes the understanding activities and how much the load is applied to the activities. In order to provide ITS with the estimation, we have built an Explanation Effect Model, EEM for short. Our ITS consists of an explanation planner and a self-explanation environment. The planner generates the load-oriented explanation based on EEM. The system also makes a student explain the explanation understanding process to himself/herself. Such self-explanation is useful to let the student be conscious of the necessity of structuring his/her knowledge with the explanation. The self-explanation environment supports the student's self-explanation. Furthermore, if the student reaches an impasse in self-explaining, the planner can generate the supporting explanation for the impasse.

This paper describes the concepts and methodologies of the INTELLITUTOR system which is an integrated intelligent programming environment for learning programming. INTELLITUTOR attempts to work as a human programming tutor to guide a user, i.e., a student, in writing a computer program, to detect logical errors within it, and to make advices not only for fixing them but also for letting him notice his misunderstandings. The system consists of three major modules, i.e., GUIDE, ALPUS and TUTOR. GUIDE is a guided editor for easy coding, ALPUS is an algorithm-based program understander, and TUTOR is an embedded-intelligent tutoring system for programming education. The ALPUS system can infer user's intentions from buggy codes in addition to detecting logical errors by means of knowledge-based reasoning. ALPUS uses four kinds of programming knowledge: 1) knowledge on algorithms, 2) Knowledge on programming techniques, 3) Knowledge on a programming language, and 4) Knowledge on logical errors. These knowledge are organized in a hierarchical procedure graph (HPG) as a multi-use knowledge base. The knowledge on logical errors was obtained by means of cognitive experiments. The student model is built by means of the results of ALPUS and interactions between a student and the system. Teaching is done based on the student model. Because the ITS subsystem, i.e., TUTOR, is embedded within the intelligent programming environment interactions for creating the student model could be minimized. Although the current system deals with the PASCAL language, most of the knowledge is applicable to those of procedure-oriented programming languages. The INTELLITUTOR system was implemented in the frame-based knowledge engineering environment ZERO and working on a UNIX workstation for system evaluation.