A numerical method is introduced which is suitable for mode analysis in an optical resonator with complicated refractive-index variations such as vertical cavity surface emitting lasers (VCSELs). In this method, the optical field of a laser mode is expressed as a linear combination of component fields with their coefficents to be determined. After a hypothetical boundary is set surrounding the region to be analyzed, the component fields are obtained by numerically integrating the wave equation in the inside region using the conditions on part of the boundary as the initial values of the integration. The total field, which is a linear combination of these fields, satisfies the equation and the selected part of the boundary conditions regardless of the coefficients. The conditions imposed on the total field on the rest of the boundary lead to a matrix eigenvalue problem, from which the optical frequency and the coefficients are obtained. The matrix expresses only boundary conditions and, therefore, its size is much smaller than that of a matrix expressing bulk conditions, as appears in the finite element method or the finite difference method. At the same time, this method has the advantage of adaptability for graded-index problems in contrast to conventional boundary formalisms such as the boundary element method and the mode matching method, because in the present method the component fields (or base functions) are calculated for individual index distributions while in these methods an inflexible set of base functions is used. As an example of the application of the method, mode properties in gain-guided VCSELs are analyzed using this method based on a two-dimensional model. This is the first model that takes into account the effects of standing-wave formation in the resonator and of the incident angle- and polarization-dependence of reflectivity. The ability to treat these effects makes the present method suitable for VCSELs equipped with a thin active layer and with multi-layer reflectors. Basic properties including polarization, threshold gain, oscillation wavelegths, and deflection of far-field patterns have been predicted for various cavity sizes and for various gradients in gain distributions. The major results of the analysis are: TE modes have lower thresholds than TM modes; the laser beam can be steered by tailoring the gain distribution as with edge-emitting lasers.

Development of a large-scale mobile communications network (IMN: Intelligent Mobile communications Network), as an infrastructure integrating multimedia functions, is indispensable for the support of future mobile communication services aiming toward "personalization," "intelligence," and "multimedia services." This paper discusses the aims of mobile communications and the outline of network technology aspects of PDC (Personal Digital Cellular) network which is currently in service. In addition, the future prospect of mobile communication technologies is discussed with special focuses on the support of universal mobility, network architecture including mobile communications platform, and multimedia technologies in the transport and access systems.

This paper proposes an adaptive modulation/TDMA scheme to achieve high capacity personal multi-media communication systems. TDMA is employed to cope with various bit rate for multi-media services. The modulation scheme is selected from 1/4-rate QPSK, 1/2-rate QPSK, QPSK, 16QAM and 64QAM according to the received C/IC (power ratio of the desired signal to the co-channel interference) and the delay spread. The spectral efficiency is evaluated by using the simulated bit error rate (BER) performance as well as the cumulative distribution of the C/IC with parameters of cell configurations. The results show that the spectral efficiency of the proposed scheme is 3.5 times higher than that of the conventional QPSK systems at the outage probability of 10%, and the effect is more remarkable at lower outage probability. The results also show that the proposed adaptive modulation is effective in improving delay spread immunity.

Radar signals fluctuate because of the incoherent scattering of raindrops. Dual-polarization radar estimates rainfall rates from differential reflectivity (ZDR) and horizontal reflectivity (ZH). Here, ZDR and ZH are extracted from fluctuating radar signals by averaging. Therefore, instrumentally measured ZDR and ZH always have errors, so that estimated rainfall rates also have errors. This paper evaluates rainfall rate errors caused by signal fluctuation. Computer simulation based on a physical raindrop model is used to investigate the standard deviation of rainfall rate. The simulation considers acquisition time, and uses both simultaneous and alternate sampling of horizontal and vertical polarizations for square law and logarithmic estimators at various rainfall rates and elevation angles. When measuring rainfall rates that range from 1.0 to 10.0mm/h with the alternate sampling method, using a logarithmic estimator at a relatively large elevation angle, the estimated rainfall rates have significant errors. The simultaneous sampling method is effective in reducing these errors.

Overlapping multi-pulse pulse position modulation (OMPPM) is a modulation scheme having higher capacity and cutoff rate than other conventional modulation schemes when both off-duration between pulses shorter than a laser pulsewidth and resolution better than a laser pulsewidth are realized [1],[2]. In Refs. [1],[2] erasure events of a few chips that can be decoded correctly is defined as an erasure event. This results in lower bounds on the performance of OMPPM in optical-direct-detection channel in quantum limited case. This paper analyzes more exact performance of OMPPM in optical direct-detection channel in quantum limited case when both off-duration between pulses shorter than a laser pulsewidth and resolution better than a laser pulsewidth are realized. First we derive the error probability of OMPPM with considering what chips are detected or erased. Then we derive the capacity and the cutoff rate of OMPPM using the error probability. It is shown that OMPPM outperforms on-off keying (OOK), pulse position modulation (PPM), multi-pulse PPM (MPPM), and overlapping PPM (OPPM) in terms of both capacity and cutoff rate for the same pulsewidth and the same duty cycle. Moreover, it is shown that OMPPM with fewer slots and more pulses per block has better cutoff rate performance when the average received power per slot is somewhat large.

A superconducting multichip module using Nb/Polyimide on a mullite multilayer ceramic substrate has been developed for Josephson LSI circuits. The Nb/Polyimide stacked layers on the mullite multilayer ceramic substrate makes it possible to fabricate superconducting off-chip wiring for control signal line. We named the MCM "SuperMCM". The superconducting transmission line is designed to have the characteristic impedance of 14 Ω to match with the Josephson devices. The superconducting critical temperature, critical current density and critical current at a via hole are 8.5 K, 8.2105 A/cm2 and 2.5 A, respectively. The SuperMCM also provides matching circuits employing quarter wavelength striplines for driving Josephson LSI circuits at a microwave frequency, and DC bias circuits in the mullite multilayer ceramic substrate. The characteristics of the matching circuit is measured in the frequency range up to 3.6 GHz and the microwave current gain of 20 dB is obtained at 1.2 GHz, which revealed that the SuperMCM has the ability to drive the Josephson LSI circuits at more than 1.2 GHz clock speed.

In this paper, we proposes a novel fuzzy control for parameter scheduling of the Hopfield neural network. When a combinatorial optimization problem, such as the traveling salesman problem, is solved by Hopfield neural network, it is efficient to adaptively change the parameters of the energy function and sigmoid function. By changing the parameters on purpose, this network can avoid being trapped at a local minima. Since there exists complex relations among these parameters, it is difficult to analytically determine the ideal scheduling. First, we investigate a bad scheduling to change parameters by simple experiments and find several rules that may lead to a good scheduling. The rules extracted from the experimental results are then realized by fuzzy control. By using fuzzy control, we can judge bad scheduling from vague network stages, and then correct the relations among the parameters. Computer simulation results of the Traveling Salesman Problem (TSP) is considered as an example to demonstrate its validity.

Go-Back-N automatic repeat request (GBN ARQ) and Stop-and wait (SW) ARQ schemes are one of fundamental and widely used error control procedures for data communication and computer communication systems. The throughput and delay performances of these ARQ schemes have been analyzed for a random error channel, which could not applicable for a radio channel, for example. In this paper, considering the correlated, noisy channel, we derive the exact formula for the delay of a frame in GBN and SW ARQ schemes. First, the delay formula for the discrete time M[x]/G/1 queueing system with starter. Next, the virtual service time of a frame is found in terms of the decay factor of a two-state Markov chain. As a result, it is shown that the performance of the delay is improved with the larger decay factor.

In this paper, we analyze high-Tc superconducting (HTS) microstrip antenna (MSA) using modified spectral domain moment method. Although it is assumed that the patch and the ground plane of the MSA are perfect electric conductors (PECs) in the conventional spectral domain method, we modify this method to compute the conduction loss of the HTS-MSA. In our analysis, the effect of the HTS film is introduced by the surface impedance which we can estimate by using the three fluid model and experimental results. This paper presents numerical results about the HTS-MSA, for example, the relations between the thickness of the substrate and the radiation efficiency, the temperature and the resonant frequency, and so forth. And we discuss the effective power range where the performance of the HTS-MSA is superior to that of the Cu-MSA.

A low-voltage operation and highly-reliable nonvoltatile semiconductor memory with a large capacity has been manufactured using 0.8-µm CMOS technology. This 3-volt, 1-Mbit, full-featured MONOS EEPROM has a chip size of 51.3 mm2 and a memory cell size of 23.1µm2. An asymmetric programming voltage method fully exploits the abilities of the MONOS device and provides 10-year data retention after 106 erase/write cycles. Because of its wide-margin circuit design, this EEPROM can also be operated at 5 volts. High-speed read out is provided by using the polycide word line and the differential sense amplifier with a MONOS dummy memory. New functions such as data protection with software and programming-end indication with a toggle bit are added, and chips are TSOP packaged for use in many kinds of portable equipment.

This paper presents the history of Flash memories and the basic concept of their functions and also reviews a variety of Flash EEPROM's so far. As Flash memories have two influential features, non-volatility and low cost per bit, they are expected to become a driving force after DRAM's to support the semiconductor industry for the next thirty years, replacing hard and floppy disks which have a large market.

This paper describes the architecture and new circuit technologies of a proposed Pixel (bit) -Aligned Triple-port DRAM (PATDRAM). The PATDRAM has a 270 K word 16 b Random Access Memory (RAM), a 512 word 8 b Serial Access Memory-(a) (SAMa) and a 1024 word 4 b Serial Access Memory-(b) (SAMb). The random port, serial-a and serial-b port can be operated by three independent synchronous clocks. In these three ports, word data can be aligned to the location of an arbitrary bit position. Data transfer from SAMb to RAM can be individually masked by transfer mask data. The RAM operates by 33 MHz synchronous clock and two SAMs operate by 40 MHz clocks. Novel architecture of the PATDRAM accelerates graphics performance and simplifies in multimedia systems which manage both realtime video and computer graphics data, and also accelerates graphics performance in both two-dimensional (2D) and three-dimensional (3D) graphics systems. PATDRAM was designed using a 0.6 µ double metal, triple poly, stacked capacitor, CMOS process technology in a 10.98 mm9.88 mm die area integrated 4.4 Mb RAM, 8 Kb SAM, 4 Kb transfer mask register and 5 Kgate logic.

This papter proposes a new type of unidirectional error control codes which indicates the location of unidirectional errors clustered in b-bit length, i.e., unidirectional byte error in b (b2) bits. Single unidirectional b-bit byte error locating codes, called SUbEL codes, are first clarified using necessary and sufficient conditions, and then code construction algorithm is demonstrated. The lower bound on check bit length of the SUbEL codes is derived. Based on this, the proposed codes are shown to be very efficient. Using the code design concept presented for the SUbEL codes, it is demonstrated that generalized unidirectional byte error locating codes are easily constructed.

This paper describes highly parallel analog image coding and decoding by cellular neural networks (CNNs). The communication system in which the coder (C-) and decoder (D-) CNNs are embedded consists of a differential transmitter with an internal receiver model in the feedback loop. The C-CNN encodes the image through two cascaded techniques: structural compression and halftoning. The D-CNN decodes the received data through a reconstruction process, which includes a dynamic current distribution, so that the original input to the C-CNN can be recognized. The halftoning serves as a dynamic quantization to convert each pixel to a binary value depending on the neighboring values. We approach halftoning by the minimization of error energy between the original gray image and reconstructed halftone image, and the structural compression from the viewpoints of topological and regularization theories. All dynamics are described by CNN state equations. Both the proposed coding and decoding algorithms use only local image information in a space inveriant manner, therefore errors are distributed evenly and will not introduce the blocking effects found in DCT-based coding methods. In the future, the use of parallel inputs from on-chip photodetectors would allow direct dynamic quantization and compression of image sequences without the use of multiple bit analog-to-digital converters. To validate our theory, a simulation has been performed by using the relaxation method on an 150 frame image sequence. Each input image was 256256 pixels whth 8 bits per pixel. The simulated fixed compression rate, not including the Huffman coding, was about 1/16 with a PSNR of 31[dB]35[dB].

This article shows construction of an asymptotically optimal source code for transmitting sentences together with truth values on a [0,1]-valued logic system.

This paper describes a pipelining universal system of discrete time cellular neural networks (DTCNNs). The new relaxation-based algorithm which is called a Pipelining Gauss Seidel (PGS) method is used to solve the CNN state equations in pipelining. In the systolic system of N processor elements {PEi}, each PEi performs the convolusional computation (CC) of all cells and the preceding PEi-1 performs the CC of all cells taking precedence over it by the precedence interval number p. The expected maximum number of PE's for the speeding up is given by n/p where n means the number of cells. For its application, the encoding and decoding process of moving images is simulated.

A uniquely decodable (UD) code pair (C, S) is considered for the two-user binary adder channel. For a class of linear codes C, the maximum independent set of the graph associated with C, which is the second code S, is evaluated. When the rate R1 of C is less than 0.5, there exist UD codes (C, S)'s such that the rate R2 of S exceeds the Khachatrian's and Guo's results in amount.

Almost stoichiometric YBa2Cu3O7-δ(110) or (103) and SrTiOx(110) films, and multilayer films consisting of them have successfully been grown epitaxially on hot SrTiO3 substrates by 90off-axis rf magnetron sputtering with facing targets. Their whole composition, compositional distribution in depth, crystallinity and surface morphology were examined by inductively coupled plasma spectroscopy, Auger electron spectroscopy, reflection high-energy electron diffraction, and scanning tunneling microscopy or atomic force microscope, respectively. When any YBa2Cu3O7-δ film was exposed to air after deposition, a Ba-rich layer was formed in a near surface region of the film. However, such a compositional distribution in depth of the film was improved by in situ deposition of a SrTiOx film on it. Moreover, the surface roughness of the YBa2Cu3O7-δ film was improved by predeposition of a SrTiOx film under it. On the basis of these results, both YBa2Cu3O7-δ/SrTiOx/YBa2Cu3O7-δ/SrTiO3(sub.) and YBa2Cu3O7-δ/SrTiOx/YBa2Cu3O7-δ/SrTiOx/SrTiO3(sub.) multilayer films with average surface roughness of 3 nm were grown reproducibly, which had uniform compositional distribution throughout the depth of the film except a near surface region of the top YBa2Cu3O7-δ layer. A new 222 structure described by Sr8Ti8O20 (Sr2Ti2O5) with a long range ordered arrangement of oxygen vacancies was formed in the SrTiOx films deposited epitaxially on YBa2Cu3O7-δ films.

This paper proposes a dynamically randomized version of DES (called RDES) in which a input-dependent swapping Sk(X) is added onto the right half of the input in each round of DES. This new scheme decreases the probability of success in differential cryptanalysis because it decreases the characteristic probability. Each "best" two-round characteristic probability is analyzed for typical schemes of the RDES: (i) RDES-1 with a simple one-level swapping, (ii) RDES-1' with an optimal one-level swapping, (iii) RDES-2 with a simple two-level swapping, and (iv) RDES-2' with an optimal two-level swapping. The main results are as follows. (a) The differential attacks on the 16-round RDES-1' and the 16-round RDES-2 require more computational time than the exhaustive search. (b) A differential attack is substantially inapplicable to the 16-round RDES-2' because more than 263 chosen plaintext pairs are required. (c) The encryption/decryption speed of the n-round RDES is almost the same as that of the n-round DES.

We propose, for the first time, highly reliable flash-type EEPROM cell fabrication using in-situ multiple rapid thermal processing (RTP) technology. In this study, rapid thermal oxynitridation tunnel oxide (RTONO) film formations followed by in-situ arsenic (As)-doped floating-gate polysilicon growth by rapid thermal chemical vapor deposition (RTCVD) technologies are fully utilized. The results show that after 5104 program/erase (P/E) endurance cycles, the conventional cell shows 65% narrowing of the threshold voltage (Vt) window, whereas the RTONO cell indicates narrowing of less than 20%. A large number of nitrogen atoms (1020 atoms/cm3) are confirmed by secondary ion mass spectrometry (SIMS), pile up at the SiO2/Si interface and distribute into bulk SiO2. It is considered that in the RTONO film stable Si-N bonds are formed which minimize electron trap generation as well as the neutral defect density, resulting in lower Vt shifts in P/E stress. In addition, the RTONO film reduces the number of hydrogen atoms because of final N2O oxynitridation. The SIMS data shows that by the in-situ RTCVD process As atoms (91020 atoms/cm3) are incorporated uniformly into 1000--thick film. Moreover, the RTCVD polysilicon film indicates an extremely flat surface. The time-dependent dielectric breakdown (TDDB) characteristics of interpoly oxide-nitride-oxide (ONO) film exhibited no defect-related breakdown and 5 times longer breakdown time as compared to phosphorus-doped polysilicon film. Therefore, the flash-EEPROM cell fabricated has good charge storing capability.