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  • Joint 2D and 3D Semantic Segmentation with Consistent Instance Semantic Open Access

    Yingcai WAN  Lijin FANG  

     
    PAPER-Image

      Pubricized:
    2023/12/15
      Vol:
    E107-A No:8
      Page(s):
    1309-1318

    2D and 3D semantic segmentation play important roles in robotic scene understanding. However, current 3D semantic segmentation heavily relies on 3D point clouds, which are susceptible to factors such as point cloud noise, sparsity, estimation and reconstruction errors, and data imbalance. In this paper, a novel approach is proposed to enhance 3D semantic segmentation by incorporating 2D semantic segmentation from RGB-D sequences. Firstly, the RGB-D pairs are consistently segmented into 2D semantic maps using the tracking pipeline of Simultaneous Localization and Mapping (SLAM). This process effectively propagates object labels from full scans to corresponding labels in partial views with high probability. Subsequently, a novel Semantic Projection (SP) block is introduced, which integrates features extracted from localized 2D fragments across different camera viewpoints into their corresponding 3D semantic features. Lastly, the 3D semantic segmentation network utilizes a combination of 2D-3D fusion features to facilitate a merged semantic segmentation process for both 2D and 3D. Extensive experiments conducted on public datasets demonstrate the effective performance of the proposed 2D-assisted 3D semantic segmentation method.

  • CyCSNet: Learning Cycle-Consistency of Semantics for Weakly-Supervised Semantic Segmentation Open Access

    Zhikui DUAN  Xinmei YU  Yi DING  

     
    PAPER-Computer Graphics

      Pubricized:
    2023/12/11
      Vol:
    E107-A No:8
      Page(s):
    1328-1337

    Existing weakly-supervised segmentation approaches based on image-level annotations may focus on the most activated region in the image and tend to identify only part of the target object. Intuitively, high-level semantics among objects of the same category in different images could help to recognize corresponding activated regions of the query. In this study, a scheme called Cycle-Consistency of Semantics Network (CyCSNet) is proposed, which can enhance the activation of the potential inactive regions of the target object by utilizing the cycle-consistent semantics from images of the same category in the training set. Moreover, a Dynamic Correlation Feature Selection (DCFS) algorithm is derived to reduce the noise from pixel-wise samples of low relevance for better training. Experiments on the PASCAL VOC 2012 dataset show that the proposed CyCSNet achieves competitive results compared with state-of-the-art weakly-supervised segmentation approaches.

  • 150 GHz Fundamental Oscillator Utilizing Transmission-Line-Based Inter-Stage Matching in 130 nm SiGe BiCMOS Technology Open Access

    Sota KANO  Tetsuya IIZUKA  

     
    LETTER

      Pubricized:
    2023/12/05
      Vol:
    E107-A No:5
      Page(s):
    741-745

    A 150 GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350 GHz and 450 GHz. According to simulation results, an output power of 3.17 dBm is achieved at 147.6 GHz with phase noise of -115 dBc/Hz at 10 MHz offset and figure-of-merit (FoM) of -180 dBc/Hz.

  • CMND: Consistent-Aware Multi-Server Network Design Model for Delay-Sensitive Applications

    Akio KAWABATA  Bijoy CHAND CHATTERJEE  Eiji OKI  

     
    PAPER-Network System

      Vol:
    E107-B No:3
      Page(s):
    321-329

    This paper proposes a network design model, considering data consistency for a delay-sensitive distributed processing system. The data consistency is determined by collating the own state and the states of slave servers. If the state is mismatched with other servers, the rollback process is initiated to modify the state to guarantee data consistency. In the proposed model, the selected servers and the master-slave server pairs are determined to minimize the end-to-end delay and the delay for data consistency. We formulate the proposed model as an integer linear programming problem. We evaluate the delay performance and computation time. We evaluate the proposed model in two network models with two, three, and four slave servers. The proposed model reduces the delay for data consistency by up to 31 percent compared to that of a typical model that collates the status of all servers at one master server. The computation time is a few seconds, which is an acceptable time for network design before service launch. These results indicate that the proposed model is effective for delay-sensitive applications.

  • Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance

    Naoto MATSUO  Akira HEYA  Kazushige YAMANA  Koji SUMITOMO  Tetsuo TABEI  

     
    BRIEF PAPER-Semiconductor Materials and Devices

      Pubricized:
    2023/08/08
      Vol:
    E107-C No:3
      Page(s):
    76-79

    The influence of the gate voltage or base pair ratio modulation on the λ-DNA FET performance was examined. The result of the gate voltage modulation indicated that the captured electrons in the guanine base of the λ-DNA molecules greatly influenced the Id-Vd characteristics, and that of the base pair ratio modulation indicated that the tendency of the conductivity was partly clarified by considering the activation energy of holes and electrons and the length and numbers of the serial AT or GC sequences over which the holes or electrons jumped. In addition, the influence of the dimensionality of the DNA molecule on the conductivity was discussed theoretically.

  • High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

    Yusuke KUMAZAKI  Shiro OZAKI  Naoya OKAMOTO  Naoki HARA  Yasuhiro NAKASHA  Masaru SATO  Toshihiro OHKI  

     
    PAPER

      Pubricized:
    2023/08/22
      Vol:
    E106-C No:11
      Page(s):
    661-668

    This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.

  • On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer

    Takumi KOBAYASHI  Masahiro MINAGAWA  Akira BABA  Keizo KATO  Kazunari SHINBO  

     
    PAPER

      Pubricized:
    2023/01/13
      Vol:
    E106-C No:6
      Page(s):
    214-219

    Improvement of the on/off ratio in organic field-effect transistors through the use of pentacene and molybdenum trioxide (MoO3) layers was attempted via the preparation of a discontinuous MoO3 layer using a mesh mask. We prepared three types of devices. Device A had a conventional top-contact structure with an n-type Si wafer and a 200-nm-thick SiO2 film onto which we deposited a 70-nm-thick pentacene film and a 30-nm-thick layer of Au top electrodes. Devices B and C had a similar structure to device A but received a continuous and a discontinuous MoO3 layer, respectively. The off current in Device B was remarkably high; in contrast, the off current in Device C was reduced and dependent on the separation of the MoO3 layer. It was deduced that the high resistance of the area without MoO3 contributed to the reduced off current.

  • AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications Open Access

    Akio WAKEJIMA  Arijit BOSE  Debaleen BISWAS  Shigeomi HISHIKI  Sumito OUCHI  Koichi KITAHARA  Keisuke KAWAMURA  

     
    INVITED PAPER

      Pubricized:
    2022/04/21
      Vol:
    E105-C No:10
      Page(s):
    457-465

    A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.

  • Ambipolar Conduction of λ-DNA Transistor Fabricated on SiO2/Si Structure

    Naoto MATSUO  Kazuki YOSHIDA  Koji SUMITOMO  Kazushige YAMANA  Tetsuo TABEI  

     
    PAPER-Semiconductor Materials and Devices

      Pubricized:
    2022/01/26
      Vol:
    E105-C No:8
      Page(s):
    369-374

    This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.

  • Image Super-Resolution via Generative Adversarial Networks Using Metric Projections onto Consistent Sets for Low-Resolution Inputs

    Hiroya YAMAMOTO  Daichi KITAHARA  Hiroki KURODA  Akira HIRABAYASHI  

     
    PAPER-Image

      Pubricized:
    2021/09/29
      Vol:
    E105-A No:4
      Page(s):
    704-718

    This paper addresses single image super-resolution (SR) based on convolutional neural networks (CNNs). It is known that recovery of high-frequency components in output SR images of CNNs learned by the least square errors or least absolute errors is insufficient. To generate realistic high-frequency components, SR methods using generative adversarial networks (GANs), composed of one generator and one discriminator, are developed. However, when the generator tries to induce the discriminator's misjudgment, not only realistic high-frequency components but also some artifacts are generated, and objective indices such as PSNR decrease. To reduce the artifacts in the GAN-based SR methods, we consider the set of all SR images whose square errors between downscaling results and the input image are within a certain range, and propose to apply the metric projection onto this consistent set in the output layers of the generators. The proposed technique guarantees the consistency between output SR images and input images, and the generators with the proposed projection can generate high-frequency components with few artifacts while keeping low-frequency ones as appropriate for the known noise level. Numerical experiments show that the proposed technique reduces artifacts included in the original SR images of a GAN-based SR method while generating realistic high-frequency components with better PSNR values in both noise-free and noisy situations. Since the proposed technique can be integrated into various generators if the downscaling process is known, we can give the consistency to existing methods with the input images without degrading other SR performance.

  • Latent Space Virtual Adversarial Training for Supervised and Semi-Supervised Learning

    Genki OSADA  Budrul AHSAN  Revoti PRASAD BORA  Takashi NISHIDE  

     
    PAPER-Artificial Intelligence, Data Mining

      Pubricized:
    2021/12/09
      Vol:
    E105-D No:3
      Page(s):
    667-678

    Virtual Adversarial Training (VAT) has shown impressive results among recently developed regularization methods called consistency regularization. VAT utilizes adversarial samples, generated by injecting perturbation in the input space, for training and thereby enhances the generalization ability of a classifier. However, such adversarial samples can be generated only within a very small area around the input data point, which limits the adversarial effectiveness of such samples. To address this problem we propose LVAT (Latent space VAT), which injects perturbation in the latent space instead of the input space. LVAT can generate adversarial samples flexibly, resulting in more adverse effect and thus more effective regularization. The latent space is built by a generative model, and in this paper we examine two different type of models: variational auto-encoder and normalizing flow, specifically Glow. We evaluated the performance of our method in both supervised and semi-supervised learning scenarios for an image classification task using SVHN and CIFAR-10 datasets. In our evaluation, we found that our method outperforms VAT and other state-of-the-art methods.

  • Consistency Regularization on Clean Samples for Learning with Noisy Labels

    Yuichiro NOMURA  Takio KURITA  

     
    PAPER-Artificial Intelligence, Data Mining

      Pubricized:
    2021/10/28
      Vol:
    E105-D No:2
      Page(s):
    387-395

    In the recent years, deep learning has achieved significant results in various areas of machine learning. Deep learning requires a huge amount of data to train a model, and data collection techniques such as web crawling have been developed. However, there is a risk that these data collection techniques may generate incorrect labels. If a deep learning model for image classification is trained on a dataset with noisy labels, the generalization performance significantly decreases. This problem is called Learning with Noisy Labels (LNL). One of the recent researches on LNL, called DivideMix [1], has successfully divided the dataset into samples with clean labels and ones with noisy labels by modeling loss distribution of all training samples with a two-component Mixture Gaussian model (GMM). Then it treats the divided dataset as labeled and unlabeled samples and trains the classification model in a semi-supervised manner. Since the selected samples have lower loss values and are easy to classify, training models are in a risk of overfitting to the simple pattern during training. To train the classification model without overfitting to the simple patterns, we propose to introduce consistency regularization on the selected samples by GMM. The consistency regularization perturbs input images and encourages model to outputs the same value to the perturbed images and the original images. The classification model simultaneously receives the samples selected as clean and their perturbed ones, and it achieves higher generalization performance with less overfitting to the selected samples. We evaluated our method with synthetically generated noisy labels on CIFAR-10 and CIFAR-100 and obtained results that are comparable or better than the state-of-the-art method.

  • Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide

    Wenlun ZHANG  Baokang WANG  

     
    PAPER-Semiconductor Materials and Devices

      Pubricized:
    2021/01/15
      Vol:
    E104-C No:8
      Page(s):
    379-385

    We design a silicon gate-all-around junctionless field-effect transistor (JLFET) using a step thickness gate oxide (GOX) by the Sentaurus technology computer-aided design simulation. We demonstrate the different gate-induced drain leakage (GIDL) mechanism of the traditional inversion-mode field-effect transistor (IMFET) and JLFET. The off leakage in the IMFET is dominated by the parasitic bipolar junction transistor effect, whereas in the JLFET it is a result of the volume conduction due to the screening effect of the accumulated holes. With the introduction of a 4 nm thick-second GOX and remaining first GOX thickness of 1 nm, the tunneling generation is reduced at the channel-drain interface, leading to a decrease in the off current of the JLFET. A thicker second GOX has the total gate capacitance of JLFETs, where a 0.3 ps improved intrinsic delay is achieved. This alleviates the capacitive load of the transistor in the circuit applications. Finally, the short-channel effects of the step thickness GOX JLFET were investigated with a total gate length from 40 nm to 6 nm. The results indicate that the step thickness GOX JLFETs perform better on the on/off ratio and drain-induced barrier lowering but exhibit a small degradation on the subthreshold swing and threshold roll-off.

  • Rapid Recovery by Maximizing Page-Mapping Logs Deactivation

    Jung-Hoon KIM  

     
    LETTER-Software System

      Pubricized:
    2021/02/25
      Vol:
    E104-D No:6
      Page(s):
    885-889

    As NAND flash-based storage has been settled, a flash translation layer (FTL) has been in charge of mapping data addresses on NAND flash memory. Many FTLs implemented various mapping schemes, but the amount of mapping data depends on the mapping level. However, the FTL should contemplate mapping consistency irrespective of how much mapping data dwell in the storage. Furthermore, the recovery cost by the inconsistency needs to be considered for a faster storage reboot time. This letter proposes a novel method that enhances the consistency for a page-mapping level FTL running a legacy logging policy. Moreover, the recovery cost of page mappings also decreases. The novel method is to adopt a virtually-shrunk segment and deactivate page-mapping logs by assembling and storing the segments. This segment scheme already gave embedded NAND flash-based storage enhance its response time in our previous study. In addition to that improved result, this novel plan maximizes the page-mapping consistency, therefore improves the recovery cost compared with the legacy page-mapping FTL.

  • The Absolute Consistency Problem for Relational Schema Mappings with Functional Dependencies

    Yasunori ISHIHARA  Takashi HAYATA  Toru FUJIWARA  

     
    PAPER-Data Engineering, Web Information Systems

      Pubricized:
    2020/08/06
      Vol:
    E103-D No:11
      Page(s):
    2278-2288

    This paper discusses a static analysis problem, called absolute consistency problem, for relational schema mappings. A given schema mapping is said to be absolutely consistent if every source instance has a corresponding target instance. Absolute consistency is an important property because it guarantees that data exchange never fails for any source instance. Originally, for XML schema mappings, the absolute consistency problem was defined and its complexity was investigated by Amano et al. However, as far as the authors know, there are no known results for relational schema mappings. In this paper, we focus on relational schema mappings such that both the source and the target schemas have functional dependencies, under the assumption that mapping rules are defined by constant-free tuple-generating dependencies. In this setting, we show that the absolute consistency problem is in coNP. We also show that it is solvable in polynomial time if the tuple-generating dependencies are full and the size of the left-hand side of each functional dependency is bounded by some constant. Finally, we show that the absolute consistency problem is coNP-hard even if the source schema has no functional dependency and the target schema has only one; or each of the source and the target schemas has only one functional dependency such that the size of the left-hand side of the functional dependency is at most two.

  • H-TLA: Hybrid-Based and Two-Level Addressing Architecture for IoT Devices and Services

    Sangwon SEO  Sangbae YUN  Jaehong KIM  Inkyo KIM  Seongwook JIN  Seungryoul MAENG  

     
    LETTER-Computer System

      Pubricized:
    2020/05/14
      Vol:
    E103-D No:8
      Page(s):
    1911-1915

    An increasing number of IoT devices are being introduced to the market in many industries, and the number of devices is expected to exceed billions in the near future. With this trend, many researchers have proposed new architectures to manage IoT devices, but the proposed architecture requires a huge memory footprint and computation overheads to look-up billions of devices. This paper proposes a hybrid hashing architecture called H- TLA to solve the problem from an architectural point of view, instead of modifying a hashing algorithm or designing a new one. We implemented a prototype system that shows about a 30% increase in performance while conserving uniformity. Therefore, we show an efficient architecture-level approach for addressing billions of devices.

  • Gate Array Using Low-Temperature Poly-Si Thin-Film Transistors

    Mutsumi KIMURA  Masashi INOUE  Tokiyoshi MATSUDA  

     
    PAPER-Semiconductor Materials and Devices

      Pubricized:
    2020/01/27
      Vol:
    E103-C No:7
      Page(s):
    341-344

    We have designed gate arrays using low-temperature poly-Si thin-film transistors and confirmed the correct operations. Various kinds of logic gates are beforehand prepared, contact holes are later bored, and mutual wiring is formed between the logic gates on demand. A half adder, two-bit decoder, and flip flop are composed as examples. The static behaviors are evaluated, and it is confirmed that the correct waveforms are output. The dynamic behaviors are also evaluated, and it is concluded that the dynamic behaviors of the gate array are less deteriorated than that of the independent circuit.

  • Copy-on-Write with Adaptive Differential Logging for Persistent Memory

    Taeho HWANG  Youjip WON  

     
    PAPER-Software System

      Pubricized:
    2019/09/25
      Vol:
    E102-D No:12
      Page(s):
    2451-2460

    File systems based on persistent memory deploy Copy-on-Write (COW) or logging to guarantee data consistency. However, COW has a write amplification problem and logging has a double write problem. Both COW and logging increase write traffic on persistent memory. In this work, we present adaptive differential logging and zero-copy logging for persistent memory. Adaptive differential logging applies COW or logging selectively to each block. If the updated size of a block is smaller than or equal to half of the block size, we apply logging to the block. If the updated size of a block is larger than half of the block size, we apply COW to the block. Zero-copy logging treats an user buffer on persistent memory as a redo log. Zero-copy logging does not incur any additional data copy. We implement adaptive differential logging and zero-copy logging on both NOVA and PMFS file systems. Our measurement on real workloads shows that adaptive differential logging and zero-copy logging get 150.6% and 149.2% performance improvement over COW, respectively.

  • Density Optimization for Analog Layout Based on Transistor-Array

    Chao GENG  Bo LIU  Shigetoshi NAKATAKE  

     
    PAPER

      Vol:
    E102-A No:12
      Page(s):
    1720-1730

    In integrated circuit design of advanced technology nodes, layout density uniformity significantly influences the manufacturability due to the CMP variability. In analog design, especially, designers are suffering from passing the density checking since there are few useful tools. To tackle this issue, we focus a transistor-array(TA)-style analog layout, and propose a density optimization algorithm consistent with complicated design rules. Based on TA-style, we introduce a density-aware layout format to explicitly control the layout pattern density, and provide the mathematical optimization approach. Hence, a design flow incorporating our density optimization can drastically reduce the design time with fewer iterations. In a design case of an OPAMP layout in a 65nm CMOS process, the result demonstrates that the proposed approach achieves more than 48× speed-up compared with conventional manual layout, meanwhile it shows a good circuit performance in the post-layout simulation.

  • Low Complexity and Low Power Sense-Amplifier Based Flip-Flop Design

    Po-Yu KUO  Chia-Hsin HSIEH  Jin-Fa LIN  Ming-Hwa SHEU  Yi-Ting HUNG  

     
    PAPER-Electronic Circuits

      Pubricized:
    2019/08/05
      Vol:
    E102-C No:11
      Page(s):
    833-838

    A novel low power sense-amplifier based flip-flop (FF) is presented. By using a simplified SRAM based latch design and pass transistor logic (PTL) circuit scheme, the transistor-count of the FF design is greatly reduced as well as leakage power performance. The performance claims are verified through extensive post-layout simulations. Compared to the conventional sense-amplifier FF design, the proposed circuit achieves 19.6% leakage reduction. Moreover, the delay, and area are reduced by 21.8% and 31%, respectively. The performance edge becomes even better when the flip-flop is integrated in N-bit register file.

1-20hit(369hit)