The embedded Markov processes associated with Markovian queueing systems are closely related, and their relationships are important for establishing an analytical basis for performance evaluation techniques. As a first step, we analyze the embedded processes associated with a general M/M/1 queueing system. Linear transformations between the infinitesimal generators and the transition probability matrices of embedded processes at arrival and departure times are explicitly derived. Based upon these linear transformations, the equilibrium distributions of the system states at arrival and departure times are obtained and expressed in terms of the equilibrium distribution at arbitrary times. The approach presented here uncovers an underlying algebraic structure of M/M/1 queueing systems, and establishes an algebraic methodology for analyzing the equilibrium probabilities of the system states at arrival and departure times for more general Markovian queueing systems.
Ideal style of arguments of the error function complement contained in the expression for the Norton's surface wave of a vertical dipole over the plane earth is discussed, and then it is pointed out that new formulas have not necessarily desired form as compared with old ones.
This paper presents an efficient algorithm for computing the capacity of discrete memoryless channels. The algorithm uses Newton's method which is known to be quadratically convergent. First, a system of nonlinear equations termed Kuhn-Tucker equations is formulated, which has the capacity as a solution. Then Newton's method is applied to the Kuhn-Tucker equations. Since Newton's method does not guarantee global convergence, a continuation method is also introduced. It is shown that the continuation method works well and the convergence of the Newton algorithm is guaranteed. By numerical examples, effectiveness of the algorithm is verified. Since the proposed algorithm has local quadratic convergence, it is advantageous when we want to obtain a numerical solution with high accuracy.
Satoshi OHTSU Hisao ISHII Takashi YAMASHITA Toshiyuki SUGIURA
A new circuit and a transformer structure is described for a high-input-voltage converter operating at a high switching frequency. The two-MOSFET forward converter is suitable for a high-input-voltage converter. To increase the switching frequency, the reset period of the transformer core flux must be reduced. There are a few methods for decreasing the reset period. Increasing the transformer flyback voltage and reducing its stray capacitance are effective in decreasing the reset period without increasing power loss. A new two-MOSFET forward converter is proposed which uset the increased flyback voltage and a transformer structure to reduce the stray capacitance. The new converter using this transformer provides the basis for a 48-V, 100-W output, 270-V input converter operating at 200kHz with high efficiency (above 95%).
Tetsuo ENDOH Riichiro SHIROTA Seiichi ARITOME Fujio MASUOKA
This paper describes the superior performances of the NAND EEPROM. Those are 1) a very small cell area: 4.83 µm2 using 0.7 µm design rule, 2) small block size for erasing: 4 Kbyte block erasing for 4 M-bit NAND EEPROM, 3) high speed programming: 180 nsec per byte for 4 M-bit NAND EEPROM, 4) large number of erase/program endurance cycles: more than 105 cycles for 4 M-bit NAND EEPROM. These extended performances coincide with the requirement for the EEPROM to replace magnetic memories such as hard and floppy disks. Especially, it is shown that NAND EEPROM has the capability to enlarge the erase/program endurance up to 3.6108 cycles. This endurance is a result of the erase and program mechanism of the NAND EEPROM cell. Fowler-Nordheim (F-N) tunneling currents flow from the substrate to the floating gate during programming and opposite currents flow during erasing. This bi-polarity F-N tunneling erase/program operation extends the life time of the tunnel oxide which results in an improved endurance.
Kazuhiko SAGARA Tokuo KURE Shoji SHUKURI Jiro YAGAMI Norio HASEGAWA Hidekazu GOTO Hisaomi YAMASHITA
This paper describes a novel Recessed Stacked Capacitor (RSTC) structure for 256 Mbit DRAMs, which can realize the requirements for both fine-pattern delineation with limited depth of focus and high cell capacitance. New technologies involved are the RSTC process, 0.25 µm phase-shift lithography and CVD-tungsten plate technology. An experimental memory array has been fabricated with the above technologies and 25 fF/cell capacitance is obtained for the first time in a 0.61.2 µm2 (0.72 µm2) cell.
Atsushi KINOSHITA Shuji MURAKAMI Yasumasa NISHIMURA Kenji ANAMI
This paper describes the delay time on bit lines due to coupling capacitance between adjacent bit lines in megabit SRAM's. The delay time on bit lines in several generations of megabit SRAM's is quantitatively analyzed using device and circuit simulations. It is shown that narrowing the bit-line swing from 200 mV to 30 mV for future 16-Mbit SRAM's will effectively reduce the difference in delay time from 1.0 ns to 0.3 ns, and that a two-block devided bit line will lower the difference in the delay-time ratio to 3% in case of 15-ns access time.
Masashi HASHIMOTO Yukio FUKUDA Shigeki ISHIBASHI Ken-ichi KITAYAMA
The newly developed GaAs-pin/SLM, that is structured with a GaAs-pin diode photodetector and a ferroelectric liquid crystal as the light phase modulator, shows the accumulative thresholding characteristic against the optical energy of the write-in pulse train. We experimentally investigate this characteristic and discuss its applications to optical parallel processings.
Masanori HAMAMOTO Joarder KAMRUZZAMAN Yukio KUMAGAI Hiromitsu HIKITA
Fahlman and Lebiere's (FL) learning algorithm begins with a two-layer network and in course of training, can construct various network architectures. We applied FL algorithm to the same three-layer network architecture as a back propagation (BP) network and compared their generalization properties. Simulation results show that FL algorithm yields excellent saturation of hidden units which can not be achieved by BP algorithm and furthermore, has more desirable generalization ability than that of BP algorithm.
This paper describes the derivation of a parallel program from a nondeterministic sequential program using a bottom-up parser as an example. The derivation procedure consists of two stages: exploitation of AND-parallelism and exploitation of OR-parallelism. An interpreter of the sequential parser BUP is first transformed so that processes for the nodes in a parsing tree can run in parallel. Then, the resultant program is transformed so that a nondeterministic search of a parsing tree can be done in parallel. The former stage is performed by hand-simulation, and the latter is accomplished by the compiler of ANDOR-, which is an AND/OR parallel logic programming language. The program finally derived, written in KL1 (Kernel Language of the FGCS Project), achieves an all-solution search without side effects. The program generated corresponds to an interpreter of PAX, a revised parallel version of BUP. This correspondence shows that the derivation method proposed in this paper is effective for creating efficient parallel programs.
Eiji FUJIWARA Masakatsu YOSHIKAWA
Unidirectional/Asymmetric error control codes have extensively been studied, not only from theoretical interest but from application to computer systems or communication systems. Recently, attention has been focused on detecting only d, not all, unidirectional errors, that is, d bits unidirectional error ditecting (d-UED) codes. Borden proposed an optimal nonsystematic d-UED code. This paper shows a new design method for cost-effective self-testing checker for the optimal d-UED code. The checking policy is to check whether condition of the Borden code satisfies or not. The proposed checker includes the parallel weight counter, the comparator and th e modulo adder in which new residue operation is defined and hence this makes the circuit self-testing. These circuits are designed to have all possible input patterns in order to satisfy self-testing property. Finally, the proposed checker has greatly reduced hardware amount compared to the existing one.
Mitsuo OHTA Noboru NAKASAKO Kazutatsu HATAKEYAMA
This paper describes a new trial of dynamical parameter estimation for the actual room acoustic system, in a practical case when the input excitation is polluted by a background noise in contrast with the usual case when the output observation is polluted. The room acoustic system is first formulated as a discrete time model, by taking into consideration the original standpoint defining the system parameter and the existence of the background noise polluting the input excitation. Then, the recurrence estimation algorithm on a reverberation time of room is dynamically derived from Bayesian viewpoint (based on the statistical information of background noise and instantaneously observed data), which is applicable to the actual situation with the non-Gaussian type sound fluctuation, the non-linear observation, and the input background noise. Finally, the theoretical result is experimentally confirmed by applying it to the actual estimation problem of a reverberation time.
Jens BLAUERT Markus BODDEN Hilmar LEHNERT
The process of room acoustic planning & design can be aided by Binaural Technology. To this end, a three-stage modelling process is proposed that consists of a "sound"-specification phase, a design phase and a work-plan phase. Binaural recording, reproduction and room simulation techniques are used throughout the three phases allowing for subjective/objective specification and surveillance of the design goals. The binaural room simulation techniques involved include physical scale models and computer models of different complexity. Some basics of binaural computer modelling of room acoustics are described and an implementation example is given. Further the general structure of a software system that tries to model important features of the psychophysics of binaural interaction is reported. The modules of the model are: outer-ear simulation, middle-ear simulation, inner-ear simulation, binaural processors, and the final evaluation stage. Using this model various phenomena of sound localization and spatial hearing, such as lateralization, multiple-image phenomena, summing localization, the precedence effect, and auditory spaciousness, can be simulated. Finally, an interesting application of Binaural Technology is presented, namely, a so called Cocktail-Party-Processor. This processor uses the predescribed binaural model to estimate signal parameters of a desired signal which may be distored by any type of interfering signals. In using this strategy, the system is able to even separate the signals of competitive speakers.
Norio UTSUMI Akifumi NAGAO Tetsuro YOSHIMOTO Ryuichi YAMAGUCHI Jiro MIYAKE Hisakazu EDAMATSU
This paper describes the performance evaluation of the Translation Look-aside Buffer (TLB) for highly integrated microprocessors, especially concerning the TLB in the SPARC Reference MMU specification. The analysis covers configurations, the number of entries, and replacement algorithms for the instruction TLB and the data TLB, which are assumed to be practically integrated on one die. We also present performance improvement using a Page Table Cache (PTC). We evaluate some types of TLB configurations with software simulation and excute the Systems Performance Evaluation Cooperative (SPEC) programs.
Masaki TSUKUDE Tsukasa OISHI Kazutami ARIMOTO Hideto HIDAKA Kazuyasu FUJISHIMA
An improved array architecture to realize fast access, low power dissipation, and wide operating margin, for the 16 Mbit DRAM is proposed. A high speed access is obtained by the fully embedded sense drive scheme for the RAS access time (tRAC), and the special page mode with the hierarchical I/O data bus lines and multi-purpose-register (MPR) for the column address access time (tCAA). A low power dissipation and wide operating margin are obtained by the improved twisted-bit-line (TBL) architecture with double dummy canceling. The 16 Mb DRAM using these architectures has 38 ns tRAC, 14 ns tCAA and 75 mA power dissipation at the typical condition.
Michael LOGOTHETIS Shigeo SHIODA
This paper deals with a network architecture based on a backbone network, using ATM switches (ATM-SW) and ATM Cross-Connect Systems (ATM-XC). The backbone network is efficiently utilized by multiple-routing scheme. The performance of the network is controlled, exploiting the concept of Virtual Paths (VP) in ATM technology. The network is controlled by allocating the bandwidth of VPs so as to minimize the worst call blocking probability of all ATM-SW pairs, under the constraints of the ATM-SW capacities and the bandwidths of transmission paths in the backbone network. To improve network performance, we use a trunk reservation scheme among service classes. We propose a heuristic approach to solve the problem of non-linear integer programming. Evaluation of the proposed optimization scheme, in comparison to other optimal methods, shows the efficiency of the present scheme.
Naoaki YAMANAKA Youichi SATO Ken-ichi SATO
The effectiveness of traffic shaping for VBR traffic is analyzed. Evaluation results prove that traffic shaping can improve link efficiency for most forms of bursty VBR traffic and that link efficiency gains of more than 250% can be expected without the shaping delay imposing any significant QOS deterioration. Traffic shaping increases the link efficiency to about 80% for traffic with short burst repetition periods. The traffic shaping techniques and analytical results described herein can be employed in the traffic management of future B-ISDN/ATM networks.
Nobuyuki HAYAMA Yuzuru TOMONOH Hideki TAKAHASHI Kazuhiko HONJO
The paper describes the design considerations, fabrication process and performance of the newly developed 1-K ECL gate array implemented with fully self-aligned AlGaAs/GaAs hoterojunction bipolar transistors (HBTs). This gate array consists of 960 three-input OR/NOR ECL basic gates. It contains about 7,600 transistors in a chip area 8.15-mm8.45-mm. The basic (FI=FO=1, wiring length L=0-mm) and loaded (FI=FO=3, L=1-mm) gates exhibit delay times of 33-ps and 82-ps, respectively, with 8.5-mW/gate power dissipation. From the measured values, fan-in, fan-out and wiring delay times of 9-ps/FI, 7-ps/FO and 17-ps/mm are estimated, respectively. These results are in good agreement with the designed results obtained using "SPICE" simulation.
Minoru NODA Hiroshi MATSUOKA Norio HIGASHISAKA Masaaki SHIMADA Hiroshi MAKINO Shuichi MATSUE Yasuo MITSUI Kazuo NISHITANI Akiharu TADA
Air-bridge metal interconnection technology is used for upper level power supply line interconnections in GaAs LSI's to reduce the signal propagation delay time. This technology reduces both parasitic capacitance between the signal line and the power supply line, and propagation delay in the signal line to about 10% and about 50%, respectively, compared to conventional 3-level interconnections without air-bridges. Under standard load conditions (FI=FO=2, length of load line=2 mm), the air-bridge technique leads to gate propagation delays which are about 60% of those in conventional interconnections. We fabricated 2.1-k gate Gate Arrays and 4-kb SRAM's using the air-bridge structure to interconnect power supply lines. For a Gate Array with 0.7 µm gate Buried P-layer Lightly Doped Drain (BPLDD) FET's, the typical gate propagation delay under standard load conditions was about 110 ps with a dissipation power of 1.4 mW/gate. SRAM's with 05 µm gate BPLDD's had typical access time (tacc) of 1.5 ns with a dissipation power of 700 mW/chip.
Kazushige HORIO Naohisa OKUMURA
GaAs MESFETs with a p-buffer layer (or a buried p-layer) are important devices for high-speed GaAs ICs. To study what conditions are required as a good substrate for ICs, we have investigated, by two-dimensional simulation, small-signal parameters and drain-current transients of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate. It is shown that the introduction of a p-buffer layer is effective to improve the transconductance and the cuttoff frequeycy. These parameters are not degrade even if the p-layer doping is increased and a neurtral p-region exists. It is also shown that drain-current drifts and hysteresis in I-V curves can occur in a case with a p-buffer layer, too. It is concluded that the introduction of a relatively highly-doped p-layer on a substrate with low acceptor and electron trap (EL2) densities is effective to realize the stable and high performance of GaAs MESFETs.