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1881-1900hit(1940hit)

  • Segmentation Based on Accumulative Observation of Apparent Motion in Long Image Sequences

    Hsiao-Jing CHEN  Yoshiaki SHIRAI  

     
    PAPER-Image Processing, Computer Graphics and Pattern Recognition

      Vol:
    E77-D No:6
      Page(s):
    694-704

    A method is presented to perform image segmentation by accumulatively observing apparent motion in a long image sequence of a dynamic scene. In each image in the sequence, locations are grouped into small patches of approximately uniform optical flow. To reduce the noise in computed flow vectors, a local image motion vector of each patch is computed by averaging flow vectors in the corresponding patches in several images. A segment contains patches belonging to the same 3-D plane in the scene. Initial segments are obtained in the image, and then an attempt to merge or split segments is iterated to update the segments. In order to remove inherent ambiguities in motion-based segmentation, temporal coherence between the local image motion of a patch and the apprent motion of every plane is investigated over long time. In each image, a patch is grouped into the segment of the plane whose apparent motion is temporally most coherent with the local image motion of the patch. When apparent motions of two planes are temporally incoherent, segments of the planes are retained as individual ones.

  • A Restatement on Applications of Electrical Considerations for One-Dimentional Wave Phenomena

    Nobuo NAGAI  

     
    PAPER

      Vol:
    E77-A No:5
      Page(s):
    804-809

    Wave digital filters are a class of digital filters. They are equivalent to commensurate transmission line circuits synthesized with uniform, lossless, and commensurated transmission lines. In order to extend their applications to physical wave phenomena including quantum electronics, it is necessary to consider a generalized distributed line whose velocity of energy flow has frequency characteristics. This paper discusses a generalized distributed circuit, and we obtain two types of lines, lossless and cut-off. In order to analyze these lines, we discuss signal flow graphs of steady state voltage and current. The reflection factors we obtain here are the same as that for an active power or a diagonal element of a scattering matrix, which is zero in conjugate matching. By using this reflection factor, we obtain band-pass filters synthesized with the cut-off lines. We also describe an analysis method for nonuniform line related to Riccati differential equation.

  • Lower Bounds on Size of Periodic Functions in Exclusive-OR Sum-of-Products Expressions

    Yasuaki NISHITANI  Kensuke SHIMIZU  

     
    PAPER-Computer Aided Design (CAD)

      Vol:
    E77-A No:3
      Page(s):
    475-482

    This paper deals with the size of switching functions in Exclusive-OR sum-of-products expressions (ESOPs). The size is the number of products in ESOP. There are no good algorithms to find an exact minimum ESOP. Since the exact minimization algorithms take a time in double exponential order, it is almost impossible to minimize ESOPs for an arbitrary n-variable functions with n5. Then,it is necessary to study the size of some concrete functions. These concrete functions are useful for testing heuristic minimization algorithms. In this paper we present the lower bounds on size of periodic functions in ESOPs. A symmetric function is said to be periodic when the vector of weights of inputs X such that f(X)1 is periodic. We show that the size of a 2t+1-periodic function with rank r is proportional to n2t+r, where t0 and 0r2t, i.e., in polynomial order,and thet the size of a (2s+1)2t-periodic function with s0 and t0 is greater than or equal to (3/2)n-(2s+1)2t, i.e., in exponential order. The concrete function the size of which is greater than or equal to 32(3/2)n-8 is presented. This function requires the largest size among the concrete functions the sizes of which are known. Some results for non-periodic symmetric functions are also given.

  • Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity

    Rabin RAUT  

     
    LETTER-Integrated Electronics

      Vol:
    E77-C No:3
      Page(s):
    515-518

    A technique to realize a transconductance which is relatively insensitive over temperature variations is reported. Simulation results with MOS and bipolar transistors indicate substantial improvement in temperature insensitivity over a range exceeding 100 degrees Celsius. It should find useful applications in analog LSI/VLSI systems operating over a wide range of temperature.

  • Recovered Bounds for the Solution to the Discrete Lyapunov Matrix Equation

    Takehiro MORI  

     
    LETTER-Control and Computing

      Vol:
    E77-A No:3
      Page(s):
    571-572

    For a discrete Lyapunov matrix equation, we present another such equation that shares the solution to the original one. This renders some existing lower bounds for measures of the size of the solution meaningful, when they yield only trivial bounds. A generalization of this result is suggested.

  • Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)

    Yukihiro KIYOTA  Tohru NAKAMURA  Taroh INADA  

     
    PAPER-Device Technology

      Vol:
    E77-C No:3
      Page(s):
    362-366

    Single-drain PMOSFET's with a very shallow source and drain were fabricated using a new doping method called rapid vapor-phase doping (RVD). This process is carried out in hydrogen atmosphere using B2H6 as a source gas. By varying flow rate of B2H6 and the doping time, shallow boron doped layers which are suitable for source and drain regions of MOSFET's are formed. The fabricated RVD-PMOSFET's have 50-nm source and drain regions with peak concentration of 41020 cm-3 which were formed under the condition of 800, B2H6 flow rate of 50 ml/min. The junction depth was one third of those formed by conventional low-energy BF2 ion implantation. RVD-PMOSFET's showed normal operation down to poly-Si gate length Lg of 0.18 µm. The advantage of shallow junction was clearly shown by the threshold voltage roll-off characteristics, that is, it was suppressed down to 0.18 µm, whereas in conventional device, roll-off occurred below 0.6 µm. This better short channel behavior suggests that RVD forms shallow source and drain regions with weaker lateral diffusion. This result confirms that RVD is an effective method for forming shallow junctions for MOSFET's.

  • Bandgap Narrowing and Incomplete Ionization Calculations for the Temperature Range from 40 K up to 400 K

    Yevgeny V. MAMONTOV  Magnus WILLANDER  

     
    PAPER-Semiconductor Materials and Devices

      Vol:
    E77-C No:2
      Page(s):
    287-297

    The theoretical modelling bandgap narrowing and percentage of ionized impurity atoms for uncompensated uniformly doped silicon containing conventional impurities (B, P, As, Sb) under thermodynamic-equilibrium conditions is presented. As distinct from existing approaches, this modelling is valid for impurity concentrations up to electrically-active-impurity-concentration limits and for the temperature range from 40 K up to 400 K. A relevant and efficient calculation software is proposed. The results of the calculations are compared with the results extracted by many authors from measurement data. A good agreement between these results is noted and possible reasons of some discrepancies are pointed out. The present modelling and software can be used for investigation of BJT charge-neutral regions as well as diffused or implanted resistors.

  • Design of Low-Distortion MOS OTA Based on Cross-Coupled Differential Amplifier and Its Application for Active Filters

    Koichi ONO  Nobuo FUJII  Shigetaka TAKAGI  Masao HOTTA  

     
    PAPER

      Vol:
    E77-A No:2
      Page(s):
    363-370

    This paper presents a design of low-power CMOS OTA-C filters suitable for on-chip integration of advanced monolithic system LSIs that have analog I/O and digital signal processing capability. First, we discuss the distortion of MOS cross-coupled circuits which have a quite low distortion when the MOS FETs have the square law characteristics. Considering the nonidealities of MOS FET, however, we find that the third harmonic component of signal dominates the total harmonic distortion (THD) of the cross-coupled pair circuit. We propose a new architecture to reduce the 3rd harmonic component. Low distortion operational transconductance amplifiers (OTA) which consist of the proposed low distortion cross-coupled pair are applied to the realization of OTA-Capacitor filters. The SPICE simulation shows that the THD of the filter is 0.0047% and the power dissipation is 22.6 mW.

  • Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording

    Kohro TAKAHASHI  Satoshi TAKEUCHI  

     
    PAPER

      Vol:
    E77-A No:2
      Page(s):
    388-393

    A high-gain, low-noise amplifier for microelectrode probe, which integrated multimicroelectrode array for extracellular recording of neural activities and solid state circuits for the amplification of induced signals from the electrodes onto one substrate, was fabricated. In the amplifier, low-noise MOSFETs are used in the first stage, an interstage high-pass filter is incorporated to avoid saturation of the amplifier due to the polarization voltage of the electrode. In the second stage, an operational amplifier incorporating Bi-MOSFETs for the realization of high input impedance and large gain-bandwidth product is used. The gain of the fabricated amplifier is 56 dB for the frequency range between 2 Hz to 10 kHz, the noise voltage is 20µVpp; these satisfied design specifications.

  • Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation

    Hisako SATO  Katsumi TSUNENO  Hiroo MASUDA  

     
    PAPER-Process Simulation

      Vol:
    E77-C No:2
      Page(s):
    106-111

    Recently, high-dose implantation and low temperature annealing have become one of the key techniques in shallow junction formation. To fabricate shallow junction in quarter-micron CMOS VLSIs, it is well known being important to evaluate the transient enhanced diffusion (TED) of implanted dopants at low temperature furnace annealing, which is caused by the damages of implantation. We have newly studied the TED phenomena by a compact empirical method. This approach has merits of simplicity and better physical intuition, because we can use only minimal parameters to describe the TED phenomena. The other purpose of this work is to evaluate two-dimensional transient enhanced diffusion focusing on phosphorus implant and furnace annealing. Firstly, we defined effective diffusivity of the TED and determined extraction procedure of the model parameters. Number of the TED model parameters is minimized to two, which describe effective enhanced diffusivity and its activation energy. The parameters have been extracted from SIMS profile data obtained from samples which range 1013-31015 cm-2 and 850-950 for phosphorus implanted dose and annealing temperature, respectively. Simulation results with the extracted transient enhanced diffusion parameters show good agreements well with the SIMS data within 2% RMS-error. Critical doses for phosphorus enhanced diffusion have been determined in 950 annealing condition. No transient enhanced diffusion is observed at 950 under the implant dose of 11013 cm-2. Also the transient enhanced diffusivity is leveled off over the dose of 11014 cm-2. It is seen that the critical dose in TED phenomena might be temperature dependent to a certain extent. We have also verified that two-dimensional effect of the TED phenomena experimentally. Two-dimensional phosphorus n- layer is chosen to verify the simulation. It was concluded that the TED has isotropic nature in phosphorus n- diffusion formation.

  • Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation

    Satoshi MATSUDA  Nobuyuki ITOH  Chihiro YOSHINO  Yoshiroh TSUBOI  Yasuhiro KATSUMATA  Hiroshi IWAI  

     
    PAPER-Process Simulation

      Vol:
    E77-C No:2
      Page(s):
    124-128

    Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.

  • Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)

    Tomomi YOSHIMOTO  

     
    PAPER-Semiconductor Materials and Devices

      Vol:
    E77-C No:1
      Page(s):
    63-68

    A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) which is a new type of bipolar transistor was fabricated and its electrical properties for the temperature range of 100 K - 300 K were investigated. The common emitter mode current gain obtained was 75 at 300 K and 74 at 100 K. It was confirmed by measuring the temperature dependence of the base current that the inversion base layer indeed functioned as a base of the Si MIS TET. The current gain of the Si MIS TET did not decrease at low temperature of 100 K, though the current gain of the conventional Si bipolar transistor decreases at low temperature due to the emitter bandgap narrowing in heavily doped emitter. This origin was that the carrier injection mechanism between the emitter and the base was tunneling.

  • Performance Enhancement in Recursive Copy Networks for Multicast ATM Switching: A Simple Flow Control Scheme

    Wen De ZHONG  Yoshikuni ONOZATO  Jaidev KANIYIL  

     
    PAPER-Switching and Communication Processing

      Vol:
    E77-B No:1
      Page(s):
    28-34

    As promising copy networks of very large multicast switching networks for Broadband ISDN, multi-stage Recursive Copy Networks (RCN) have been proposed recently. In the multicast switch structure, the RCN precedes a point-to-point switch. At an RCN, all the copies of a master cell are generated recursively, i.e., a few copies of the master cell are made initially, and by considering each of these copies to be master cells, more copies are made which, in turn, are again considered to be master cells to make still more copies, the process thus progressing recursively till all the required copies are made. By this principle of recursive generation of copies, the number of copies that can be generated is independent of the hardware size of the RCN. A limitation of RCNs is that buffer sizes at all stages except the first stage have to be large so as to keep the cell loss due to buffer overflow within desired limits. This paper inspects a flow control scheme by which the probability of buffer overflow can be kept low, even though the buffer sizes at later stages are not large. Under this flow control procedure, a cell is not transmitted from a stage to the succeeding stage, if the occupancy level of the buffer of the succeeding stage exceeds a threshold. We study by simulation the performance aspects of such a flow control scheme in RCNs under cut-through switching scheme and under store-and-forward switching scheme. At high load intensities, the overflow probability can be reduced by an order of magnitude in 2-stage RCNs and by two orders of magnitude in 3-stage RCNs. To restrict the overflow probability within a given limit, the required buffer size is less under flow control than under no flow control. The implementation of the flow control is simple and the control overhead is small, thereby making the scheme attractive for implementation in high speed switching environments. Further, the proposed flow control scheme does not disturb the cell sequence.

  • The Application of a Data-Driven Processor to Automotive Engine Control

    Kenji SHIMA  Koichi MUNAKATA  Shoichi WASHINO  Shinji KOMORI  Yasuya KAJIWARA  Setsuhiro SHIMOMURA  

     
    PAPER

      Vol:
    E76-C No:12
      Page(s):
    1794-1803

    Automotive electronics technology has become extremely advanced in the regions of automotive engine control, anti-skid brake control, and others. These control systems require highly advanced control performance and high speed microprocessors which can rapidly execute interrupt processing. Automotive engine control systems are now widely utilized in cars with high speed, high power engines. At present, it is generally acknowledged that such high performance engine control for the 10,000 rpm, 12 cylinder engines requires three or more conventional microprocessors. We fabricated an engine control system prototype incorporating the data-driven processor under development, which was installed in an actual automobile. In this paper, the characteristics of the engine control program and simulation results are firstly discussed. Secondly, the structure of the engine control system prototype and the control performance applied to the actual automobile are shown. Finally, from the results of software simulation and the installation of the engine control system prototype with the data-driven processor, we conclude that a single chip data-driven microprocessor can control a high speed, high power, 10,000 rpm, 12 cylinder automobile engine.

  • Analysis of Dielectric Hollow Slab Waveguides Using the Finite-Difference Beam-Propagation Method

    Junji YAMAUCHI  Takashi ANDO  Hisamatsu NAKANO  

     
    LETTER-Electromagnetic Theory

      Vol:
    E76-C No:11
      Page(s):
    1695-1697

    The finite-difference beam-propagation method is applied to the analysis of hollow slab waveguides (HSWs). The attenuation constants for the TE0 and TE1 modes are evaluated and compared with those obtained by the perturbation theory. The propagating field and differential power loss in the transition from a straight HSW to a bent HSW are revealed and discussed.

  • An Analysis of Optimal Frame Rate in Low Bit Rate Video Coding

    Yasuhiro TAKISHIMA  Masahiro WADA  Hitomi MURAKAMI  

     
    PAPER-Communication Systems and Transmission Equipment

      Vol:
    E76-B No:11
      Page(s):
    1389-1397

    We analyze frame rates in low bit rate video coding and show that an optimal frame rate can be theoretically obtained. In low bit rate video coding the frame rate is usually forced to be decreased for reducing the total amount of coded information. The choice of frame rate, however, has a great effect on the picture quality in a trade-off relation between coded picture quality and motion smoothness. It is known from experience that in order to achieve an optimum balance between these two factors, a frame rate has to be selected which is appropriate for the coding scheme, property of the video sequences and coding bit rate. A theoretical analysis, however, on the existence of an optimal frame rate and how the optimal frame rate would be expressed has not been performed. In this paper, coding distortion measured by mean square error is analyzed by using video signal models such as a rate-distortion function for coded frames and inter-frame correlation coefficients for non-coded frames. Overall picture quality taking account of coded picture quality and motion smoothness simultaneously is expressed as a function of frame rate. This analysis shows that the optimum frame rate can be uniquely specified. The maximum frame rate is optimal when the coding bit rate is higher than a certain value for a given video scene, while a frame rate less than the maximum is optimal otherwise. The result of the theoretical analysis is compared with the results of computer simulation. In addition, the relation between this analysis and a subjective evaluation is described. From both comparisons this theoretical analysis can be justified as an effective scheme to indicate the optimal frame rate, and it shows the possibility of improving picture quality by selecting frame rate adaptively.

  • Single-Shot Evaluation of Stability Hypercube and Hyperball in Polynomial Coefficient Space

    Takehiro MORI  Hideki KOKAME  

     
    LETTER-Control and Computing

      Vol:
    E76-A No:11
      Page(s):
    2036-2038

    A quick evaluation method is proposed to obtain stability robustness measures in polynomial coefficient space based on knowledge of coefficients of a Hurwitz stable nominal polynomial. Two norms are employed: l- and l2-norm, which correspond to the stability hypercube and hyperball in the space, respectively. Just inverting Hurwitz matrix for the nominal polynomial immediately yields closed-form estimates for the size of the hypercube and hyperball.

  • Estimating the Two-Dimensional Blood Flow Velocity Map from Cineangiograms: Algorithm Using an Initial Guess and Its Application to an Abdominal Aneurysm

    Naozo SUGIMOTO  Chikao UYAMA  Tetsuo SUGAHARA  Yoshio YANAGIHARA  

     
    PAPER-Medical Electronics and Medical Information

      Vol:
    E76-D No:10
      Page(s):
    1288-1297

    To derive blood flow dynamics from cineangiograms (CAG), we have developed an image processing algorithm to estimate a two-dimensional blood fiow velocity map projected on CAG. Each image area of CAG is diveded into blocks, and it is assumed that the movement of the contrast medium between two serial frames is restricted only to adjacent blocks. By this assumption, a fundamental equation" and the maximum flow constraints" are derived. The equation and constraints state the relationship between the volume of contrast medium in each block and the flow components" that are the volumes of contrast medium flowing from/to its adjacent blocks. The initial guess" that is a set of approximately obtained flow components is corrected using these relationships. The corrected flow components are then transformed into blood flow velocities, which are illustrated in the form of a needle diagram. In numerical experiments, the estimation error between the real flow velocity generated artificially and the flow velocity estimated with our algorithm was evaluated under one of the worst conditions. Although the maximum error was fairly large, the estimated flow velocity map was still acceptable for visual inspection of flow velocity pattern. We then applied our algorithm to an abdominal CAG (clinical data). The results showed flow stagnation and reverse flow in the abdominal aneurysm, which are consistent with the presence of a thrombus in the aneurysm. This algorithm may be a useful diagnostic tool in the assessment of vascular disease.

  • Un-Biased Linear Algorithm for Recovering Three-Dimensional Motion from optical Flow

    Norio TAGAWA  Takashi TORIU  Toshio ENDOH  

     
    PAPER-Image Processing, Computer Graphics and Pattern Recognition

      Vol:
    E76-D No:10
      Page(s):
    1263-1275

    This paper describes a noise resistant algorithm for recovering the three-dimensional motion of a rigid object from optical flow. First, it is shown that in the absence of noise three-demensional motion can be obtained exactly by a linear algorithm except in the special case in which the surface of the object is on a general quadratic surface passing through the viewpoint, and the normal vector of the surface at the viewpoint is perpendicular to the translation velocity vector. In the presence of noise, an evaluation function is introduced based on the least squares method. It is shown, however, that the solution which minimizes the evaluation function is not always optimal due to statistical bias. To deal with this problem, a method to eliminate the statistical bias in the evaluation function is proposed for zero mean white noise. Once the statistical bias is eliminated, the solution of the linear algorithm coincides with the correct solution by means of expectation. In this linear algorithm, only the eigenvector corresponding to the zero eigenvalue of a 33 matrix is necessary to find the translational velocity. Once the translational velocity is obtained, the rotational velocity can be computed directly. This method is also shown to be noise resistant by computer simulation.

  • A Third-Order Low-Pass Notch RC Active Filter with a Minimum Number of Equal-Valued Capacitors

    Yukio ISHIBASHI  

     
    LETTER-Analog Circuits and Signal Processing

      Vol:
    E76-A No:10
      Page(s):
    1863-1865

    We propose a third-order low-pass notch filter realized by a single operational amplifier and a minimum number of equal-valued capacitors. As a design example we realize a Chebyshev filter with a ripple of 0.5 dB and it is shown that the experiment result is very good.

1881-1900hit(1940hit)