We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90 nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.

A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200 for 30 minutes. Atomically flat silicon surfaces are lead to improve the MOS inversion layer mobility and current drivability of MOSFETs and to decrease the fluctuations in electrical characteristics of MOSFETs. It is important to realize the technology that evaluates the flatness and the uniformity of atomically flat silicon surfaces. The off direction angle is calculated by using two straight edge lines selected from measurement data. And the off angle is calculated from average atomic terrace width under assumption that height difference between neighboring terraces is equal to the step height, 0.135 nm, of (100) silicon surface. The analyzing of flatness of each terrace can be realized by converting the measurement data using the off direction angle and the off angle. And, the average roughness of each terrace is about 0.017-0.023 nm. Therefore, the roughness and the uniformity of each terrace can be evaluated by this proposed technique.

A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

A new hierarchical isosurface reconstruction scheme from a set of tomographic cross sectional images is presented. From the input data, we construct a hierarchy of volume, called the volume pyramid, based on a 3D dilation filter. After extracting the base mesh from the volume at the coarsest level by the cell-boundary method, we iteratively fit the mesh to the isopoints representing the actual isosurface of the volume. The SWIS (Shrink-wrapped isosurface) algorithm is adopted in this process, and a mesh subdivision scheme is utilized to reconstruct fine detail of the isosurface. According to experiments, our method is proved to produce a hierarchical isosurface which can be utilized by various multiresolution algorithms such as interactive visualization and progressive transmission.

An inverse scattering problem of estimating the reflection coefficient and the surface impedance from two sets of absolute values of the near field with periodic change is investigated. The problem is formulated in terms of a nonlinear simultaneous equations which is derived from the relation between the two sets of absolute values and the field defined by a finite summation of the modal functions by applying the Fourier analysis. The reflection coefficient is estimated by solving the equations by Newton's method through the successive algorithm with the increment of the number of truncation in the summation one after another. Numerical examples are given and the accuracy of the estimation is discussed.

We study the high-frequency asymptotic analysis methods for the scattered fields by a cylindrically curved conducting surface excited by the incident wave on the curved surface from the convex side. We first derive the novel hybrid ray-mode solution for the scattered fields near the concave surface by solving a canonical problem formulated under the assumption that the cylindrically curved conducting surface possesses only one edge. Then by applying the ray tracing technique and the idea of Keller's GTD (Geometrical Theory of Diffraction), the solutions derived for the canonical problem are extended to account for the problem of the radiation from and the scattering by the other edge of the cylindrically curved surface. We confirm the validity of the novel asymptotic representations proposed in the present study by comparing both with the numerical results obtained from the method of moment and the experimental results performed in the anechoic chamber.

We have proposed a unique and simple modification to the definition of surface-normal vectors in Physical optics (PO). The modified surface-normal vectors are so defined as that the reflection law is satisfied at every point on the surface. The PO with currents defined by this new surface-normal vector has the enhanced accuracy for the edged scatterers to the level of Geometrical Theory of Diffraction (GTD), though it dispenses with the knowledge of high frequency asymptotic techniques. In this paper, firstly, the remarkable simplicity and the high accuracy of the modified PO as applied to the analysis of Radar Cross Section (RCS) is demonstrated for 2 dimensional problems. Noteworthy is that the scattering not only from edge but also from wedge is accurately predicted. This fringe advantage is confirmed asymptotically by comparing the edge and wedge diffraction coefficients of GTD. Finally, the applicability for three dimensional cube is also demonstrated by comparison with experimental data.

This paper deals with the scattering of a transverse magnetic (TM) plane wave from a perfectly conductive surface with a finite periodic array of rectangular grooves. By use of the method in a previous paper [IEICE TRANS. ELECTRON. VOL.E90-C, no.4, pp.903-906, APRIL 2007], the total scattering cross section is numerically calculated for several different numbers of grooves at a low grazing angle of incidence. It is newly found that, when the corrugation width becomes thousands times of wavelength, the total scattering cross section slightly depends on the groove depth and the period, and becomes almost proportional to square root of the corrugation width with a small correction.

In this report, we demonstrate electrocatalytic oxidation properties of ascorbic acid at poly(3,4-ethylenedioxythiophene) (PEDOT) thin films in view of their potential application for bio-sensing devices. PEDOT thin films were deposited on gold thin films by electropolymerization of EDOT monomer in acetonitrile solvent. In-situ electrochemical-surface plasmon resonance spectroscopy (EC-SPR) was used to detect both electrochemical and optical signals upon an injection of ascorbic acid.

Attenuated total reflection (ATR) property utilizing surface plasmon (SP) excitation was investigated for BK-7 prism/MgF2/Ag film/fluorescent organic dye film structure. In the structure, it is expected that SPs are excited at MgF2/Ag and Ag/dye film interfaces by Otto and Kretschmann configurations, respectively. In the experimental ATR curve, reflection dips for the SP excitations at the interfaces could be detected. Furthermore, SP emission lights were observed by irradiation of Ar ion laser beam from the dye film side. The SP emission light curve with two peaks was observed and it was also considered that the peaks corresponded to the SP excitation of Otto and Kretschmann configurations. The SP emission light spectra indicated the excited fluorescent dyes induced the SP emission lights. Intense emission light of Otto configuration was observed in this sample.

In this paper, active frequency selective surfaces (FSS) having a squared aperture with a metal plate loading are described. Active FSS elements using switched PIN diodes are discussed with an equivalent circuit model. A unit cell consists of a square aperture element with metal island loading and one PIN diode placed at the upper gap, considering the vertical polarization. The electromagnetic properties of the active FSS structure are changed by applying dc bias to the substrate, and they can be estimated by the equivalent circuit model of the FSS structure and PIN diode. This active FSS design enables transmission to be switched on or off at 2.3 GHz, providing high transmission when the diodes are in an off state and high isolation when the diodes are on. The equivalent circuit model in the structure is investigated by analyzing transmission and reflection spectra. Measurements on active FSS are compared with numerical calculations. The experimentally observed frequency responses are also scrutinized.

The properties of the surface-conduction electron-emitter display (SED) are mainly decided by the surface-conduction electron emitters (SCE), which are normally made from the expensive metal Pd. In this study, we propose to use metal Zn instead of Pd as the emitter material. Both the device electrode and ZnO thin film are deposited by a sputter, and the electron emitters (SCE) are formed by the electro-forming process. The electron emission characteristic is obtained and the luminescence is observed.

In this study, attenuated total reflection (ATR) utilizing surface plasmon (SP) excitation and SP emission lights were observed for the adsorption of polystyrene (PS) spheres and a water-soluble polymer. The PS spheres contained fluorescent dyes and exhibited red fluorescence. The ATR properties indicated film deposition with increasing number of adsorption cycles. The SP emission light induced by the fluorescent dye in the spheres was also measured, and an increase in the peak intensity, as well as an angle shift, was observed. Furthermore, the SP emission light spectra were investigated at various emission angles. The dispersion relation obtained from the SP emission light almost corresponded to that obtained from the ATR curves.

A new mesh reconstruction technique, called dividing virtual belt algorithm (DVBA), is proposed for approximating the surface from a set of wire-frame contours. DVBA decomposes the branching region into a set of virtual belts and virtual canyons. A tiling technique based on the divide-and-conquer strategy is also introduced to approximate the surface from the virtual belt, and the virtual canyons are covered by a conventional polygon triangulation technique. The experimental result shows that our method works well even though there are many complicated branches in the object.

This paper reports on the effect of switching action on the contact surfaces of earthquake disaster prevention relays. Large-scale earthquakes occur frequently in Japan and bring extensive damage with them, and fire caused by electrical equipments is one example of the serious damage which can occur. Earthquake sensors capable of maintaining a high level of reliability when earthquakes occur play an important role as a means of minimizing this damage. For this reason, we carried out observations by focusing on samples which had either been subjected to an electric current of 10 mA or 0.1 A. The samples of 10 mA exhibited low and constant contact resistance despite the addition of seismic motion, while the samples of 0.1 A samples exhibited varying contact resistance and damage on their contact spots resulting from the addition of seismic motion. The sample surfaces were then observed using an atomic force microscope (AFM) in tapping mode and a surface potential microscope (SPoM). As a result, we found that even the unused earthquake disaster prevention relay (standard sample) which had a surface lined with asperities on its parallel striations formed by irregular protrusions due to dust and other deposits. In addition, scanning the contact surface with the SPoM at the same potential revealed the occurrence of differences in surface potential which varied in response to the asperities on the striations.

On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio 3.8. We discuss these features in terms of the energy barrier between the gate metal and the two-dimensional hole channel and drift region below the gate.

The surface amino groups of plasma-polymerized films prepared from various nitrogen-containing monomers were quantitatively characterized for bioelectronic and biomedical applications. X-ray photoelectron spectroscopy (XPS) measurements were conducted on two kinds of surfaces: pristine surfaces of plasma-polymerized film prepared using various nitrogen-containing monomers, and theirs surfaces whose amino groups had been derivatized by a primary-amine-selective reagent carrying an XPS label. The XPS data showed that the maximum surface density of amino groups for this film was 8.41013 cm-2. Amino groups constituted 14-64% of all surface nitrogen atoms (NH/N), depending on the monomer used.

We have proposed a random curved surface model as a new mathematical concept which enables the expression of spatial correlation. The model gives us an appropriate methodology to deal with the systematic components of device variation in an LSI chip. The key idea of the model is the fitting of a polynomial to an array of Gaussian random numbers. The curved surface is expressed by a new extension from the Legendre polynomials to form two-dimensional formulas. The formulas were proven to be suitable to express the spatial correlation with reasonable computational complexity. In this paper, we show that this approach is useful in analyzing characteristics of device variation of actual chips by using experimental data.

LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.

This paper deals with the scattering of a transverse magnetic (TM) plane wave from a perfectly conductive sinusoidal surface with finite extent. By use of the undersampling approximation and a rectangular pulse approximation, an asymptotic formula for the total scattering cross section at a low grazing limit of incident angle is obtained explicitly under conditions such that the surface is small in roughness and slope, and the corrugation width is sufficiently large. The formula shows that the total scattering cross section is proportional to the square root of the corrugation width but does not depend on the surface period and surface roughness. When the corrugation width is not large, however, the scattered wave can be obtained by a single scattering approximation, which gives the total scattering cross section proportional to the corrugation width and the Rayleigh slope parameter. From the asymptotic formula and the single scattering solution, a transition point is defined explicitly. By comparison with numerical results, it is concluded that the asymptotic formula is fairly accurate when the corrugation width is much larger than the transition point.