Surface-channel PMOSFETs are suitable for use in the quarter micron CMOS devices. For surface-channel PMOSFETs with p+ poly-Si gates, boron penetration and hot-carrier effects were investigated. When the annealing temperature is higher and the gate oxide is thinner, a larger threshold voltage shift was observed for p+ poly-Si PMOSFETs, because of boron penetration. Furthermore, PMOSFETs with BF2-implanted gates cause larger boron penetration than those with Boron-implanted gates. Howerer, the PMOSFET lifetime, determined by hot-carrier reliability, does not depend on the degree of boron penetration. Instead, it depends on doping species, that is, BF2 and Boron. PMOSFETs with BF2-implanted gates have about 100 times longer lifetime than those with Boron-implanted gates. The main reason for the longer lifetime of BF2-doped PMOSFETs is the incorporation of fluorine in the gate oxide of the PMOSFET with the BF2-implanted gate, resulting in the smaller electron trapping in the gate oxide. The maximun allowed supply voltage,based on the hot-carrier reliability, is higher than4V for sub-half micron PMOSFETs with BF2- or Boron-implanted poly Si gates.

Degradation of metal-oxide-semiconductor field-effect transistors (MOSFETs) reliability such as the relative transconductance reduction by plasma exposure is evaluated. The linear region peak transconductance (gm) decreases with antenna ratio (exposed antenna area/gate area) due to the plasma-induced Si-SiO2 interface state generation. The Si-SiO2 interface-related gm reduction which is defined as (gm0gm)/gm, where gm0 is the initial value of gm, decreases as the gate oxide thickness decreases. It is also found that the decreasing amount of gm depends on the conduction current from the plasma. The correlation between the (gm0gm)/gm and the plasma-induced reduction of charge-to-breakdown of the gate oxide with a constant current stress (ΔQBD) is observed, and the result shows that the gm reduction of nMOSFET during the plasma process is severe to the plasma-induced damage compared with the gate oxide breakdown.

In this paper, bifurcation and chaotic behavior which occur in simple looped MOS inverters with high speed operation are described. The most important point in this work is to change a nonlinear transfer characteristic of a MOS inverter to the nonlinearity generating a chaos. Three types of circuits which include four, three and one MOS inverters, respectively, are proposed. A switched capacitor (SC) circuit to operate sampling holding is added in the loop in each of the circuits. The bifurcation and chaotic behavior have been found along with a variation of an external input, and/or a sampling clock frequency. The bifurcation and chaotic behavior of the proposed simple looped MOS inverters are verified by employing SPICE circuit simulator as well as the experiments. For the first type of four looped CMOS inverters, Lyapunov exponent λ which has the positive regions for the chaotic behavior can be calculated by use of the fitting nonlinear function synthesized from two sigmoid functions. For the second type of three looped CMOS inverters and the third type of one looped MOS inverter, the nonlinear charge/discharge characteristics of the hold capacitor in the SC circuit is utilized efficiently for forming the nonlinearity generating the bifurcation and chaotic behavior. Their bifurcation can be generated by the sampling clock frequency parameter which is controlled easily.

This paper describes the fabrication of 0.1 µm gate length CMOS devices and analysis of delay time by circuit simulation. In order to reduce the gate resistance, TiN capped cobalt salicide technology is applied to the fabrication of 0.1 µm CMOS devices. Gate sheet resistance with a 0.1 µm gate is as low as 5 Ω/sq. Propagation delay times of 0.1 µm and 0.15 µm CMOS inverter are 21 ps and 36 ps. Simulated propagation delay time agreed fairly well with experimental results. For gate length over 0.15 µm, intrinsic delay in CMOS devices is the main dalay factor. This suggests that increasing current drivability is the most efficient way to improve propagation delay time. At 0.1 µm, each parasitic component and intrinsic delay have similar contributions on device speed due to the short channel effect. To improve delay time, we used rapid thermal annealing or a high dose LDD structure. With this structure, drain current increases by more than 1.3 times and simulation predicted a delay time of 28 ps is possible with 0.15 µm CMOS inverters.

Carrier mobility is one of the most fundamental parameters in semiconductor device modeling, and many mobility models have already been reported. Especially for numerical device simulators, many local models which are functions of impurity concentration and electric field at each local point have been studied. However, concerning their dependence on impurity concentration including carrier screening effects, these models suffer parameter fitting procedure because of their empirical formulation. In such models, carrier screening effects to the Coulomb potential of ionized impurity are not sufficiently considered, although we can find some models which treat the effects as only a small perturbation term. According to the simple theory of Brooks and Herring, carrier screening effects should be included in strong combination with impurity concentration terms and cannot be treated as additional perturbations. Although Brooks-Herring theory is successful, it also suffers from overestimation of the mobility values at concentration higher than 1018 cm-3 which causes some other complicated phenomena. Therefore there have been no models which directly use Brooks-Herring formula. But it is true that such screening effects should be considered when carrier concentration differs from impurity concentration as in the inversion layers of MOSFETs. We have developed a new mobility model for its dependence of impurity and carrier concentration based on the theory of Brooks-Herring. Brooks-Herring theory is based on simple physics of screened Coulomb potential, and therefore makes the model to include effects of free carriers without an artifitial formula. For high doping regime, an additional term has been introduced in Brooks-Herring formula to correct the high doping effects. Except for this term, the model should be most appropriate for including the carrier screening effects upto the concentration of 1018 cm-3. The new model is implimented in a device simulator, and is applied to the evaluation of MOSFETs especially for the universal curves of inversion layer mobility. Moreoever, the applications to the depletion-type MOSFET confirm the validity of the screening effects. The purpose of this paper is to propose the new mobility model and to show its validity through these applications to MOSFETs.

This paper presents a new LP based optimal cell selection method. Optimal cell selection is useful tool for final tuning of LSI designs. It replaces drivabilities of cells, adjusting timing, area, and power constraints. Using the latest and earliest arrival times, it can handle cycle time optimization. We also make a useful initial basis, which speeds up a simplex LP solver by 5 times without any relaxations nor approximations. From experimental results, it can speed up a 13k-transistor circuit of a manual chip design by 17% without any increase of area.

The main aim of device-level global routing is to obtain high-performance detailed routing under various layout constraints. This paper deals with global routing for analog function blocks. For analog LSIs, especially for those operating at high frequency, various layout constraints are specified prior to routing. Those constrainsts must be completely satisfied to achieve the required circuit performance. However, they are sometimes too hard to be solved by any heuristic method even if a problem is small in size. Thus, we propose a method based on the branch-and-bound algorithm, which can generate all possible solutions to find the best one. Unfortunately, the method tends to take a large amount of processing time. In order to defeat the drawbacks by accelerating the process, constraints are classified into two groups: constraints on single nets and constraints between two nets. Therefore our method consists of two parts: in the first part only constraints on single nets are processed and in the second part only constraints between two nets are processed. The method is efficient because many possible routes that violate layout constraints are rejected immediately in each part. This makes it possible to construct a smaller search tree and to reduce processing time. Additionally this idea, all nets processed in the second phase are sorted in the proper order to reduce the number of edges in the search tree. This saves much processing time, too. Experimental results show that our method can find a good global route for hard layout constraints in practical processing time, and also show that it is superior to the well-known simulated annealing method both in quality of solutions and in processing time.

Many typical control problems such as deadlock avoidance problems and mutual exclusion problems can be formulated as forbidden marking problems. This paper studies a forbidden marking problem in controlled complementary-places Petri nets, which are suitable model for sequential control systems. We show a necessary and sufficient condition for the existence of a control law for this problem. We also obtain a maximally permissive control law which allows a maximal number of transitions to fire subject to a condition that forbidden markings will never be reached.

We give an efficient shortest path algorithm on a mesh-connected processor array for nn banded matrices with bandwidth b. We use a b/2b/2 semisystolic processor array. The input data is supplied to the processor array from the host computer. The output from the processor array can be also supplied to itself through the host computer. This algorithm computes all pair shortest distances within the band in 7n4b/21 steps.

We model a road network as a directed graph G(V,E) with a source s and a sink t, where each edge e has a positive length l(e) and each vertex v has a distribution function αv with respect to the traffic entering and leaving v. This paper proposes a polynomial time algorithm for evaluating the importance of each edge e E whicn is defined to be the traffic f(e) passing through e in order to assign the required traffic Fst(0) from s to t along only shortest s-t paths in accordance with the distribution function αv at each vertex v.

This paper proposes a universal structure for STM-N(N=1, 2, 3, ) multiplex line terminals that only utilizes N chips CMOS LSIs for Section OverHead (SOH) processing. The uniquely configured LSIs are applicable to any STM-N line terminal equipment. Reasonable frame alignment performance attributes, such as the maximum average reframe time, false in-frame time, out-of-frame detection time, and misframe time, are calculated for the configuration. A prototype SOH processing LSI built on 0.8m BiCMOS technology successfully realizes the functions needed for multiplex section termination. The STM-64 frame is also demonstrated using the proposed circuit configuration and prototype LSIs.

The performance of the hybrid-ARQ scheme with a convolutional code, in which the retransmission criterion is based on an estimated decoding error rate, is evaluated for moderately time-varying channels. It is shown by computer simulations that the simple average diversity combining scheme can almost attain the same performance as the optimally weighted diversity combining scheme. For the whole and partial retransmission schemes with the average diversity combining, the theoretical bounds of throughput and bit error rate are derived, and it is shown that their bounds are tight and the treated schemes can attain a given error rate with good throughput for moderately time-varying channels. Furthermore, the throughput is shown to be improved by the partial retransmission scheme compared with the whole retransmission scheme.

In improving channel utilization in microcellular systems, adaptive channel allocation using distributed control has been reported to be effective. We describe an analytical approximation algorithm for channel dimensioning of distributed adaptive channel allocation. We compare our analytical results with simulation results and show the characteristics of permissible load as a function of the number of base station channels based on our method. Finally we illustrate traffic design and administration based on our algorithm.

In this paper, we propose an efficient method (called DIRIC algorithm) to allocate carrier frequencies so as to minimize intermodulation products in two-level SCPC systems in which Hub station and many Remote stations communicate each other through satellite transponder. We also present a very efficient method to evaluate intermodulation products with substantially reduced CPU time in two-level SCPC systems. We compare and analyze the performance of several frequency allocation methods to extend DELINS-INSDEL algorithm (which is proposed by Okinaka) to two-level SCPC systems. When the proposed algorithm is applied to systems with modulated carrier, it is verified that this algorithm has the same efficiency as the unmodulated carrier. It is also shown heuristically that certain initial assignment algorithms perform better than random assignment.

Telecommunication services are expected to be upgraded from POTS to B-ISDN services in the future. This means that the conventional metallic access networks should be upgraded to optical fiber access networks because of providing high bit-rate services. Therefore, it is very important to clarify upgrade strategies in access networks. This paper proposes a dynamic evaluation method that can support decision-making on the upgrade strategy from the viewpoint of economy. This method can determine the most promising future access network and upgrade timing. Moreover, viability of various upgrade strategies can be evaluated by this method.

B-ISDN telecommunication systems will require signal processing speeds up to 600 Mbps or more. We must therefore consider the affects of signal reflection, signal attenuation, time dalay, and so on when designing these systems. The higher the signal speed, the larger the electrical noise induced around the connector, especially in the plated through holes (PTHs) area. This paper presents the results of our investigation focused on connector mounting configurations in the signal transmission line, especially whether or not signals transmit through the PTH in a printed circuit board (PCB). How the signal reflection characteristics depend upon transmission line configurations are discussed and experimental results and simulation analyses for a transmission line system using a small miniature A-type (SMA) connector as an example are performed. It is suggested that designs for future high-speed signal transmission circuits take into account the PTH diameter and/or the PTH pitch conditions, values for which can be determined from simulation analysis.

This paper presents a method for spatial and temporal segmentation of long image sequences which include multiple independently moving objects, based on the Minimum Description Length (MDL) principle. By obtaining an optimal motion description, we extract spatiotemporal (ST) segments in the image sequence, each of which consists of edge segments with similar motions. First, we construct a family of 2D motion models, each of which is completely determined by its specified set of equations. Then, based on these sets of equations we formulate the motion description length in a long sequence. The motion state of one object at one moment is determined by finding the model with shortest description length. Temporal segmentation is carried out when the motion state is found to have changed. At the same time, the spatial segmentation is globally optimized in such a way that the motion description of the entire scene reaches a minimum.

There are various difficulties in processing spoken dialogs because of acoustic, phonetic, and grammatical ill-formedness, and because of interactions among participants. This paper describes temporal characteristics of utterances in human-human task-oriented dialogs and interactions between the participants, analyzed in relation to the topic structure of the dialog. We analyzed 12 task-oriented simulated dialogs of ASJ continuous speech corpus conducted by 13 different participants whose total length being 66 minutes. Speech data was segmented into utterance units each of which is a speech interval segmented by pauses. There were 3876 utterance units, and 38.9% of them were interjections, fillers, false starts and chiming utterances. Each dialog consisted of 6 to 15 topic segments in each of which participants exchange specific information of the task. Eighty-six out of 119 new topic segments started with interjectory utterances and filled pauses. It was found that the durations of turn-taking interjections and fillers including the preceding silent pause were significantly longer in topic boundaries than the other positions. The results indicate that the duration of interjection words and filled pauses is a sign of a topic shift in spoken dialogs. In natural conversations, participants' speaking modes change dynamically as the conversation develops. Response time of both client and agent role speakers became shorter as the dialog proceeded. This indicates that interactions between the participants become active as the dialog proceeds. Speech rate was also affected by the dialog structure. It was generally fast in the initiating and terminating parts where most utterances are of fixed expressions, and slow in topic segments of the body part of the dialog where both client and agent participants stalled to speak in order to retrieve task knowledge. The results can be utilized in man-machine dialog systems, e.g., in order to detect topic shifts of a dialog, and to make the speech interface of dialog systems more natural to a human participant.

We developed a new test-synthesis that operates method based on data transfer analysis at the language level. Using this method, an efficient scan path is inserted to generate test data for the sequential circuit by using only a test generation tool for the combinatorial circuit. We have applied this method successfully to the behavior, logic, and test design of a 32-bit, RISC-type processor. The size of the synthesized circuit without test synthesis is 23,407 gates; the size with test synthesis is 24,811 gates. This is an increase of only a little over 6%.

In order to shorten the time-to-market, Application-Specific Integrated Circuits (ASIC's) are designed from a library of pre-defined layout implementations for register-transfer modules such as multipliers, adders, RAM, ROM, etc. Current approaches to selecting the implementations from the library usually deal with their timing-area estimates and do not consider delay of the intermodule wiring. However, as sub-micron design rules are utilized for IC fabrication, wiring delay becomes comparable to the functional unit delay and can not longer be ignored even in register-transfer synthesis. In this paper we propose an algorithm that combines module selection with Performance-Driven module placement and reduces an impact of wiring on sub-micron ASIC performance. The algorithm not only efficiently exploits multiple module realizations in the design library, but also finds the module placement which minimizes wiring delay. Experimental results on several benchmarks show that considering both module and wiring issues, more than 30% reduction of the total circuit delay can be achieved.