We developed an electrically driven near-infrared broadband light source based on self-assembled InAs quantum dots (QDs). By combining emissions from four InAs QD ensembles with controlled emission center wavelengths, electro-luminescence (EL) with a Gaussian-like spectral shape and approximately 85-nm bandwidth was obtained. The peak wavelength of the EL was blue-shifted from approximately 1230 to 1200 nm with increased injection current density (J). This was due to the state-filling effect: sequential filling of the discrete QD electron/hole states by supplied carriers from lower (ground state; GS) to higher (excited state; ES) energy states. The EL intensities of the ES and GS emissions exhibited different J dependence, also because of the state-filling effect. The point-spread function (PSF) deduced from the Fourier-transformed EL spectrum exhibited a peak without apparent side lobes. The half width at half maximum of the PSF was 6.5 µm, which corresponds to the estimated axial resolution of the optical coherence tomography (OCT) image obtained with this light source. These results demonstrate the effectiveness of the QD-based device for realizing noise-reduced high-resolution OCT.

High structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for high current densityInGaAs/AlAs/InP RTD structures grown by metal-organic vapour phase epitaxy (MOVPE) for THz applications. By using a PL line scanning technique across the edge of the sample, we identify characteristic luminescence from the quantum well (QW) and the undoped/n+ InGaAs layers. By using the Moss-Burstein effect, we are able to measure the free-electron concentration of the emitter/collector and contact layers in the RTD structure. Whilst the n+ InGaAs luminescence provides information on the doping concentration, information on the alloy composition and compositional variation is extracted from the InGaAs buffer layer. The QW luminescence provides information on the average well width and provides a monitor of the structural perfection with regard to interface and alloy disorder.

This paper proposes a novel image integral equation of the first type (IIE-1) for a TE plane wave scattering from periodic rough surfaces with perfect conductivity by means of the method of image Green's function. Since such an IIE-1 is valid for any incident wavenumbers including the critical wavenumbers, the analytical properties of the scattered wavefield can be generally and rigorously discussed. This paper firstly points out that the branch point singularity of the bare propagator inevitably appears on the incident wavenumber characteristics of the scattered wavefield and its related quantities just at the critical wavenumbers. By applying a quadrature method, the IIE-1 becomes a matrix equation to be numerically solved. For a periodic rough surface, several properties of the scattering are shown in figures as functions of the incident wavenumbers. It is then confirmed that the branch point singularity clearly appears in the numerical solution. Moreover, it is shown that the proposed IIE-1 gives a numerical solution satisfying sufficiently the optical theorem even for the critical wavenumbers.

In this paper, an electromagnetic plane wave diffraction by finite number of loaded thick slits on infinitely long perfectly electric conductor (PEC) screen is analyzed. Here we formulate the problem by utilizing the Kobayashi Potential (KP) method, which is a kind of eigenfunction expansion method in terns of Weber-Schafheitlin discontinuous integrals. The multiple scattering contributions between the slits are analytically included in the formulation. The solution derived here may provide us with precise numerical result, so it may be considered as a reference solution to other numerical and approximate analyses.

In all-optical switches using the cascade of second harmonic generation and difference frequency mixing in periodically poled lithium niobate (PPLN) waveguide devices, walk-off between the fundamental and second harmonic pulses causes crosstalk between neighboring symbols, and limits the switching performance. In this paper, we numerically study retiming characteristics of all-optical switches that employ the PPLN waveguide devices with consideration for the effects of the crosstalk and for the input timing of the data and clock pulses. We find that the time offset between the data and clock pulses can control the timing jitter of the switched output; an appropriate offset can reduce the jitter while improving the switching efficiency.

In this study, we propose and fabricate an oscillator array composed of three resonant-tunneling-diode terahertz oscillators integrated with slot-coupled patch antennas, and which does not require a Si lens. We measure the radiation pattern for single and arrayed oscillator, and calculate the output power using the integration of the pattern. The output power of a single oscillator was found to be ～15 µW. However, using an array configuration, almost combined output power of ～55 µW was obtained.

Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m2, from bottom and top side at 163 mA/cm2, respectively, were obtained.

This paper proposes a construction method of binary Z-periodic complementary sequence set (Z-PCSs) based on binary aperiodic complementary sequence pair (Golay pair) and interleaved technique. The constructed set is optimal or almost optimal with respect to the theoretical bound in different conditons. The set can be used in multi-carrier code division multiple access communication systems. The designed sequence has periodic complementary characteristics, which lead to a strong ability to resist multi-path interference and multiple access interference.

A highly efficient sky-blue organic light-emitting diode (OLED) based on a thermally-activated delayed fluorescence (TADF) molecule, 1,2-bis(carbazol-9-yl)-4,5-dicyanobenzene (2CzPN), was studied. The sky-blue OLED exhibited a maximum external electroluminescence quantum efficiency (ηEQE) of over 24.0%. In addition, a white OLED using 2CzPN combined with green and orange TADF emitters showed a high ηEQE of 17.3% with a maximum power efficiency of 52.3 lm/W and Commission Internationale de l'Eclairage coordinates of (0.32, 0.43).

This paper summarizes recent progress on modified uni-traveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.

One of the most important processes in cellular-assisted device-to-device (D2D) communications is device discovery, which decides whether two devices are located close to each other. The discovery process is performed by devices periodically transmitting discovery signals so that neighbor devices can receive them to recognize their proximate physical presence. While a fixed set of discovery parameters are used regardless of devices in most of the existing works, discovery periods are not necessarily the same for all devices, as they can be set differently depending on their channel conditions and operational environments, e.g., the mobile speeds. In this paper, we present an optimization framework to determine the discovery periods for individual devices in cellular-assisted D2D communication systems. We consider two different types of optimization problems, taking the different user velocities into account: minimizing the average number of undiscovered device pairs, and minimizing the number of discovery signal transmissions while maintaining the average number of undiscovered device pairs for each device less than a pre-specified threshold. We present analytical and simulation results to demonstrate that short discovery periods can be beneficial to high-mobility devices, while longer discovery periods are allowed for devices with lower velocities.

Time redundancy is sometimes an only option for enhancing circuit reliability when the circuit area is severely restricted. In this paper, a time-redundant error-correction scheme, which is particularly suitable for coarse-grained reconfigurable arrays (CGRAs), is proposed. It judges the correctness of the executions by comparing the results of two identical runs. Once a mismatch is found, the second run is terminated immediately to start the third run, under the assumption that the errors tend to persist in many applications, for selecting the correct result in the three runs. The circuit area and reliability of the proposed method is compared with a straightforward implementation of time-redundancy and a selective triple modular redundancy (TMR). A case study on a CGRA revealed that the area of the proposed method is 1% larger than that of the implementation for the selective TMR. The study also shows the proposed scheme is up to 2.6x more reliable than the full-TMR when the persistent error is predominant.

This paper describes circuit design and measurement results of a newly proposed GaAs-HBT step-gain amplifier configuration and its application to a 3.3-3.6 GHz WiMAX power amplifier module for use in customer premises equipment. The step-gain amplifier implemented using only a usual HBT process is based on a current-mirror-based, base-collector diode switches and a passive attenuator core for the purpose of bypassing a power-gain stage. The stage allows an individual design approach in terms of gain and attenuation levels as well as large operating current reduction in the attenuation state. To confirm the effectiveness of the proposed step-gain amplifier, a prototype of the amplifier was designed and fabricated, and then a WiMAX power amplifier module was also designed and fabricated as an application example of the proposed configuration to an amplifier product. Measurements are as follows. For a 3.5-V power supply and a 3.5-GHz non-modulated signal, the step-gain amplifier delivers 23.7 dBm of 1-dB gain compressed output power and 10.7 dB of linear gain in the amplification state. In the attenuation state, the amplifier exhibits 21 dBm of 1-dB gain expanded input power, -9.7 dB of gain, and 15 mA of current dissipation while keeping the gain stage switched off and maintaining input and output return loss of less than -10 dB at a 3.5-GHz band. The WiMAX amplifier operating with a 5-V supply voltage and a 64-QAM modulated signal is capable of delivering a 28.5-dBm linear output power, a 37-39 dB gain, and 15% of PAE over a wide frequency range from 3.3 to 3.6 GHz in the high-gain state while keeping error vector magnitude as low as 2.5%. This amplifier, which incorporates the proposed step-gain configuration into its interstage, enables a 24-dB gain reduction and a 45-mA large quiescent current reduction in the low-gain state.

This work presents a novel counter-based randomization method for use in a flying-adder frequency synthesizer with a cost-effective structure that can replace the fractional accumulator. The proposed technique involves a counter, a comparator and a modified linear feedback shift register. The power consumption and speed bottleneck of the conventional flying-adder are significantly reduced. The modified linear shift feedback register is used as a pseudo random data generator, suppressing the spurious tones arise from the periodic carry sequences that is generated by the fractional accumulator. Furthermore, the proposed counter-based randomization method greatly reduces the large memory size that is required by the conventional approach to carry randomization. A test chip for the proposed counter-based randomization method is fabricated in the TSMC 0.18,$mu $m 1P6M CMOS process, with the core area of 0.093,mm$^{mathrm{2}}$. The output frequency had a range of 43.4,MHz, extasciitilde 225.8,MHz at 1.8,V with peak-to-peak jitter (Pk-Pk) jitter 139.2,ps at 225.8,MHz. Power consumption is 2.8,mW @ 225.8,MHz with 1.8 supply voltage.

A novel method was developed to expand and adjust the bandwidth of long-period fiber gratings (LPFGs) as band-rejection filters. The band-rejection filters were constructed by concatenating two LPFGs with an appropriate space, that causes a $pi$-phase shift. The component LPFGs with the same period and the different numbers of periods are designed to have $-$3-dB transmission at wavelengths on both sides of a resonance wavelength symmetrically, and the transmission loss of the concatenated LPFGs peaks at the -3-dB transmission wavelengths. The rejection bandwidth was widened by changing the interval between the -3-dB transmission wavelengths. The concatenated LPFGs were simulated by using a transfer-matrix method based on a discrete coupling model, and were fabricated by a point-by-point arc discharge technique on the basis of the simulation results. It was demonstrated that the rejection bandwidth at 20-dB attenuation reached 26.6,nm and was 2.7 times broader than that of a single uniform LPFG.

Ni nanodots (NDs) used as nano-scale top electrodes were formed on a 10-nm-thick Si-rich oxide (SiO$_{mathrm{x}}$)/Ni bottom electrode by exposing a 2-nm-thick Ni layer to remote H$_{2}$-plasma (H$_{2}$-RP) without external heating, and the resistance-switching behaviors of SiO$_{mathrm{x}}$ were investigated from current-voltage ( extit{I--V}) curves. Atomic force microscope (AFM) analyses confirmed the formation of electrically isolated Ni NDs as a result of surface migration and agglomeration of Ni atoms promoted by the surface recombination of H radicals. From local extit{I--V} measurements performed by contacting a single Ni ND as a top electrode with a Rh coated Si cantilever, a distinct uni-polar type resistance switching behavior was observed repeatedly despite an average contact area between the Ni ND and the SiO$_{mathrm{x}}$ as small as $sim$ 1.9 $ imes$ 10$^{-12}$cm$^{2}$. This local extit{I--V} measurement technique is quite a simple method to evaluate the size scalability of switching properties.

Super regenerative detectors using a resonant tunneling diode (RTD) were fabricated and investigated for ultra-high frequency detectors. A key point is to use the RTD super regenerative detector for detecting much higher frequencies than the free-running oscillation frequency of the detector. This is possible owing to the superior high frequency characteristics of the RTDs. This has various advantages, such as circuit simplicity, easy design, and low power consumption. Clear detection of 50,GHz signal was demonstrated with a super regenerative detector which has 1.5,GHz free-running frequency. Moreover, detailed experiments revealed that the frequency dependence of the detection efficiency is smooth, and the harmonic frequencies have no effect. This is advantageous for high frequency detection.

We have investigated both the film thickness and surface potential of organic semiconductors deposited on two kinds of electrodes by the simultaneous observation with the dynamic force microscopy (DFM)/Kelvin-probe force microscope (KFM). To clarify the interfacial properties of organic semiconductor, we fabricated samples that imitated the organic light emitting diode (OLED) structure by depositing bis [$N,N '$-(1-naphthyl)-$N,N '$-phenyl] benzidine ($alpha$-NPD) and tris (8-hydroxyquinolinato) aluminum (Alq$_{3}$), respectively, on indium-tin-oxide (ITO) as anode and aluminum (Al) as cathode by the vacuum evaporation deposition using intersecting metal shadow masks. This deposition technique enables us to fabricate four different areas in the same substrate. The crossover area of the deposited thin films were measured by the DFM/KFM, the energy band diagrams were depicted and we considered that the charge behavior of the organic semiconductor depended on the material and the structure.

A dynamic controller, based on the Stability Transformation Method (STM), has been used to stabilize unknown and unstable periodic orbits (UPOs) in dynamical systems. An advantage of the control method is that it can stabilize unknown UPOs. In this study, we introduce a novel control method, based on STM, to stabilize UPOs in DC-DC switching power converters. The idea of the proposed method is to apply temporal perturbations to the switching time. These perturbations are calculated without information of the locations of the target orbits. The effectiveness of the proposed method is verified by numerical simulations and laboratory measurements.

The effective permittivity of the two-dimensional multilayered periodic structures which consist of the rectangular dielectric cylinders is examined numerically. The original periodic structure is replaced with a simple structure such as the dielectric slab. By using the reflectance of the periodic structure obtained by the FDTD method, the effective permittivity of the dielectric slab, which has the same reflectance as that of the periodic structure, is obtained by using the transcendental equation. In order to reduce the procedure to obtain the reflectance from the multilayered periodic structures, the reflectance from one-layered structure is used. The range of the application and validity of this procedure is examined.