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[Keyword] driver(84hit)

41-60hit(84hit)

  • Compact 40 Gbit/s EML Module Integrated with Driver IC

    Takatoshi YAGISAWA  Tadashi IKEUCHI  

     
    PAPER

      Vol:
    E92-C No:7
      Page(s):
    951-956

    A compact (13.38.05.6 mm) 40 Gbit/s 1.55-µm electroabsorption (EA) modulator monolithically integrated distributed feedback (DFB) laser diode (EML) [1] module integrated with a driver IC has been developed. Its compactness was realized by employing a broadband feed-through and a bias tee which were accurately designed by 3-dimensional (3D) electromagnetic simulation. It was confirmed that the simulation results of the frequency response and the actual measurement results are corresponding well. Clear eye opening of the 40 Gbit/s optical output waveform of the fabricated EML module was observed. Degradation was not observed even when the 40 Gbit/s electrical signal was launched into the module via the flexible printed circuit (FPC).

  • A Distortion-Free General Purpose LVDS Driver

    Seung-Jin PARK  Young Hun SEO  Hong-June PARK  Jae-Yoon SIM  

     
    LETTER-Electronic Circuits

      Vol:
    E92-C No:2
      Page(s):
    278-280

    A general-purpose multi-Gbps LVDS driver is presented with a new distortion-free level conversion scheme. For high-speed transmission, a dynamic pre-emphasis scheme is also proposed with overdriving current effectively distributed in time. The proposed LVDS driver achieves supply-insensitive duty preservation with a reduction of switching noise by 50-percent.

  • Charge Pump Design for TFT-LCD Driver IC Using Stack-MIM Capacitor

    Gyu-Ho LIM  Sung-Young SONG  Jeong-Hun PARK  Long-Zhen LI  Cheon-Hyo LEE  Tae-Yeong LEE  Gyu-Sam CHO  Mu-Hun PARK  Pan-Bong HA  Young-Hee KIM  

     
    PAPER

      Vol:
    E91-C No:6
      Page(s):
    928-935

    A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.

  • Transistor Sizing of LCD Driver Circuit for Technology Migration

    Masanori HASHIMOTO  Takahito IJICHI  Shingo TAKAHASHI  Shuji TSUKIYAMA  Isao SHIRAKAWA  

     
    LETTER-Circuit Synthesis

      Vol:
    E90-A No:12
      Page(s):
    2712-2717

    Design automation of LCD driver circuits is not sophisticatedly established. Display fineness of an LCD panel depends on a performance metric, ratio of pixel voltage to video voltage (RPV). However, there are several other important metrics, such as area, and the best circuit cannot be decided uniquely. This paper proposes a design automation technique for a LCD column driver to provide several circuit design results with different performance so that designers can select an appropriate design among them. The proposed technique is evaluated with an actual design data, and experimental results show that the proposed method successfully performs technology migration by transistor sizing. Also, the proposed technique is experimentally verified from points of solution quality and computational time.

  • Asymmetric Truncation Error Compensation for Digital Multimedia Broadcasting Mobile Phone Display

    Chan-Ho HAN  

     
    LETTER

      Vol:
    E90-C No:11
      Page(s):
    2136-2140

    The power reduction of display devices has become an important issue for extending battery life and running time when they are used in digital multimedia broadcasting (DMB) mobile phones. DMB mobile phones generally use 16-bit data per pixel to reduce power consumption even though a liquid crystal display (LCD) graphic controller can support 16-, 18-, and 24-bit data per pixel. Also, the total transmission time of 16-bit data per pixel is only half that for 18- and 24-bit data per pixel. Decoded 24-bit image data in the frame memory of a DMB decoder are asymmetrically truncated to 16-bit image data. This results in a lack of smoothness such as blocking effects and/or pseudo edge artifacts. To solve these problems, the author proposes and implements a new asymmetric pixel data truncation error compensation algorithm using 1-bit least significant bit (LSB) data expansion with correlated color information for the purpose of ensuring smoothness. In the experimental results, the proposed algorithm is able to correct various artifacts.

  • Support by Warning or by Action: Which is Appropriate under Mismatches between Driver Intent and Traffic Conditions?

    Toshiyuki INAGAKI  Makoto ITOH  Yoshitomo NAGAI  

     
    PAPER-Reliability, Maintainability and Safety Analysis

      Vol:
    E90-A No:11
      Page(s):
    2540-2545

    This paper tries to answer the following question: What type of support should be given to an automobile driver when it is determined, via some method to monitor the driver's behavior and the traffic environment, that the driver's intent may not be appropriate to a traffic condition? With a medium fidelity, moving-base driving simulator, three conditions were compared: (a) Warning type support in which an auditory warning is given to the driver to enhance his/her situation recognition, (b) action type support in which an autonomous safety control action is executed to avoid an accident, and (c) the baseline condition in which no driver support is given. Results were as follows: (1) Either type of driver support was effective in accident prevention. (2) Acceptance of driver support functions varied context dependently. (3) Participants accepted a system-initiated automation invocation as long as no automation surprises were possible to occur.

  • 10-Bit Current Driver LSI for Large-Size and High-Resolution Active Matrix Organic Light Emitting Diode Displays

    Il-Hun JEONG  Oh-Kyong KWON  

     
    PAPER-LSI Applications

      Vol:
    E90-C No:5
      Page(s):
    1021-1026

    We present the 10-bit current driver LSI with 2-set current digital-to-analog converters (DACs) and output channel current sample and hold (S/H) circuits for large-size and high-resolution active matrix organic light emitting diode (AMOLED) display applications. This current driver LSI has 300 output channels and the output current ranges from 0 µA to 290 µA. The maximum output current level can be controlled by 2-bit control signals because the maximum output current level depends on display size and resolution. The chip was fabricated using 0.65µm BiCMOS process and characterized. The chip size is 16.8 mm3.6 mm. Experimental results show that the output current DNL is less than 0.4 LSB and that INL is less than 1.5 LSB. This is good enough to apply 15.5 inch WXGA (1280RGB768) AMOLED displays.

  • A Novel Low-Power Bus Design for Bus-Invert Coding

    Myungchul YOON  Byeong-hee ROH  

     
    LETTER-Digital

      Vol:
    E90-C No:4
      Page(s):
    731-734

    This letter presents a novel implementation for Bus-Invert Coding called No Invert-Line Bus-Invert Coding (NIL-BIC) architecture. It not only removes the invert-lines used in previous BIC implementations, but sends the coding information without additional bus-transitions. NIL-BIC can save about 50% more bus-power than the implementations using invert-line.

  • A Sampling Switch Design Procedure for Active Matrix Liquid Crystal Displays

    Shingo TAKAHASHI  Shuji TSUKIYAMA  Masanori HASHIMOTO  Isao SHIRAKAWA  

     
    PAPER-Circuit Synthesis

      Vol:
    E89-A No:12
      Page(s):
    3538-3545

    In the design of an active matrix LCD (Liquid Crystal Display), the ratio of the pixel voltage to the video voltage (RPV) of a pixel is an important factor of the performance of the LCD, since the pixel voltage of each pixel determines its transmitted luminance. Thus, of practical importance is the issue of how to maintain the admissible allowance of RPV of each pixel within a prescribed narrow range. This constraint on RPV is analyzed in terms of circuit parameters associated with the sampling switch and sampling pulse of a column driver in the LCD. With the use of a minimal set of such circuit parameters, a design procedure is described dedicatedly for the sampling switch, which intends to seek an optimal sampling switch as well as an optimal sampling pulse waveform. A number of experimental results show that an optimal sampling switch attained by the proposed procedure yields a source driver with almost 18% less power consumption than the one by manual design. Moreover, the percentage of the RPVs within 1001% among 270 cases of fluctuations is 88.1% for the optimal sampling switch, but 46.7% for the manual design.

  • A Low-Power Write Driver for Hard Disk Drives

    Tatsuya KAWASHIMO  Hiroki YAMASHITA  Masayoshi YAGYU  Fumio YUKI  

     
    LETTER

      Vol:
    E89-C No:11
      Page(s):
    1670-1673

    This paper describes a new low-power write driver circuit for mobile hard disk drive preamplifiers. To achieve low power consumption, we developed a write driver circuit with a single-stage MOS transistor as the current driver, which both switches and controls the write current. We also developed a reflection cancellation method to suppress the distortion of the write current waveform during write transition. Fabricated using 0.35-µm SOI-BiCMOS technology, this write driver circuit consumes low power, 380 mW (at 100 MHz).

  • Generalized Modeling of Bias Voltage Compensation with Current Control for Full-Color LED Display Based on Load-Line Regulation

    Jian-Long KUO  Tsung-Yu WANG  Tzu-Shuang FANG  

     
    PAPER

      Vol:
    E89-C No:10
      Page(s):
    1418-1426

    To give comprehensive and consecutive understanding about load line regulation in the previous companion paper [1], more generalized expansion and theoretical derivation will be proposed in this paper. The paper provides an alternative current control approach to control the bias voltage compensation for full-color LED display based on the load-line approach. Modeling and formulation of the driver circuit system will be discussed in detail. Bias voltage compensation based on three load-lines regulation will keep the operating point fixed for the three color cells. Many properties can be observed based on the proposed model. Parasite effect such as the stray resistor and the stray capacitor will be considered in this paper. The associated standard RGB color testing for color cells and white color testing will be illustrated to verify the proposed compensation for the display driver circuit. The objectives of the luminance uniformity and the gray scale control can be achieved by using circuit approach. It is believed that this paper will be helpful to the driver circuit technology for the full-color LED display.

  • A True 10-bit Data Driver LSI for HDTV TFT-LCDs

    Jin-Ho KIM  Oh-Kyong KWON  Byong-Deok CHOI  

     
    PAPER-Si Devices and Processes

      Vol:
    E89-C No:5
      Page(s):
    585-590

    We present our recent results of the 10-bit data driver LSI for 42-inch diagonal TFT-LCD TV with full HD format. To develop data driver LSIs for a true 10-bit TFT-LCD TV with full HD (19201080) format, small chip area, low power consumption, and output uniformity between channels are key problems that must be solved. By applying a two-stage DAC which combines 8-bit resistor-string DAC and 2-bit binary weighted capacitor DAC, the area increase is limited to only 30% compared to the area of 8-bit resistor-string DAC. The output deviation between channels is successfully limited within 5 mV and the driver LSI with 414 outputs consumes the maximum total current of 16 mA when driving 42-inch HDTV panel. We confirmed that the picture with 10-bit shades of gray is much more natural than that with 8-bit shades of gray.

  • On-Chip Low-Power High-Voltage Generators for Monolithic Bi-Stable Display Drivers

    Wim HENDRIX  Jan DOUTRELOIGNE  Andre VAN CALSTER  

     
    PAPER-Electronic Circuits

      Vol:
    E89-C No:4
      Page(s):
    531-539

    Bi-stable displays form the foundation of a novel and attractive LCD technology. From now on, images can be maintained on the LCD after driving voltages have been withdrawn from the electrodes. In low frame-rate applications such as e-books, e-labels, smartcards etc., this offers a major improvement in power consumption and battery life. However, bi-stable displays require high driving voltages and complex waveforms. Furthermore, the nature of some applications doesn't allow the use of relatively large passive components. This rules out more traditional approaches for high-voltage generation with external coils or capacitors. This paper describes the design of completely integrated and programmable high-voltage generators capable of generating output voltages up to 50 V out of a 3 V supply voltage. Features like 8-bit output voltage programmability and stabilisation were implemented to make this type of high-voltage generator suitable for bi-stable display drivers. Design aspects and simulation results are discussed, as well as measurements on prototype generators implemented in the 0.7 µm 100 V I2T100 technology from AMI Semiconductor.

  • A New Three-Piece Driver Model with RLC Interconnect Load

    Lakshmi K. VAKATI  Kishore K. MUCHHERLA  Janet M. WANG  

     
    PAPER-VLSI Design Technology and CAD

      Vol:
    E88-A No:8
      Page(s):
    2206-2215

    The scaled down feature size and the increased frequency of today's deep sub-micron region call for fundamental changes in driver-load models. To be more specific, new driver-load models need to take into consideration the nonlinear behavior of the drivers, the inductance effects of the loads, and the slew rates of the output waveforms. Current driver-load models use the conventional single Ceff (one-ramp) approach and treat the interconnect load as lumped RC networks. Neither the nonlinear property nor the inductance effects were considered. The accuracy of these existing models is therefore questionable. This paper introduces a new multi-ramp driver model that represents the interconnect load as a distributed RLC network. The employed two effective capacitance values capture the nonlinear behavior of the driver. The lossy transmission line approach accounts for the impact of inductance when modeling the driving point interconnect load. The new model shows improvements of 9% in the average delay error and 2.2% in the slew rate error compared to SPICE.

  • A Highly Linear and Large Bandwidth Fully Differential CMOS Line Driver Suitable for High-Speed Data Transmission Applications

    Mostafa SAVADI OSKOOEI  Khayrollah HADIDI  Abdollah KHOEI  

     
    PAPER

      Vol:
    E88-A No:2
      Page(s):
    416-423

    This article describes a large bandwidth and low distortion line driver in a 0.35-µm CMOS process. The line driver drives a 75 Ω resistive load. Its power consumption is 140 mW from a 3.3 V supply. It has a relatively high -3 dB bandwidth (260 MHz) with good phase margin of about 70 degrees. It shows very low THD (-74.5 dB) when drives the load with a 3.3 V peak to peak sine wave at 10 MHz. This architecture reduces the distortion by locating the input differential pair inside the feedback loop and eliminating the distortion of the feedback transistors, which is dominant source of distortion at high frequencies. Thus, it improves the linearity of the output voltage in comparison with previous designs.

  • A Large-Swing High-Driving Low-Power Class-AB Buffer Amplifier with Low Variation of Quiescent Current

    Chih-Wen LU  

     
    PAPER-Electronic Circuits

      Vol:
    E87-C No:10
      Page(s):
    1730-1737

    A large-swing, high-driving, low-power, class-AB buffer amplifier, which consists of a high-gain input stage and a unity-gain class-AB output stage, with low variation of quiescent current is proposed. The low power consumption and low variation of the quiescent output current are achieved by using a weak-driving and a strong-driving pseudo-source followers. The high-driving capability is mainly provided by the strong-driving pseudo-source follower whose output transistors are turned off in the vicinity of the stable state to reduce the power consumption and the variation of output current, while the quiescent state is maintained by the weak-driving pseudo-source follower. The error amplifiers with source-coupled pairs of the same type transistors are merged into a single error amplifier to reduce the area of the buffer and the current consumption. An experimental prototype buffer amplifier implemented in a 0.35-µm CMOS technology demonstrates that the circuit dissipates an average static power consumption of only 388.7 µW with the standard deviation of only 3.4 µW, which is only 0.874% at a power supply of 3.3 V, and exhibits the slew rates of 2.18 V/µs and 2.50 V/µs for the rising and falling edges, respectively, under a 300 Ω /150 pF load. Both of the second and third harmonic distortions (HD2 and HD3) are -69 dB at 20 kHz under the same load.

  • Current Mode Circuits for Fast and Accurate Optical Level Monitoring with Wide Dynamic Range

    Johan BAUWELINCK  Dieter VERHULST  Peter OSSIEUR  Xing-Zhi QIU  Jan VANDEWEGE  Benoit DE VOS  

     
    PAPER-Devices/Circuits for Communications

      Vol:
    E87-B No:9
      Page(s):
    2641-2647

    This paper presents a new approach based on current mode circuits for fast and accurate optical level monitoring with wide dynamic range of a gigabit burst-mode laser driver chip. Our proposed solution overcomes the drawbacks that voltage mode implementations show at higher bit rates or in other technologies. The main speed-limiting factor of the level monitoring circuitry is the parasitic capacitance of the back facet monitor photodiode. We propose the use of an active-input current mirror to reduce the impact of this parasitic capacitance. The mirror produces two copies of the photo current, one to be used for the "0" level measurement and another for the "1" level measurement. The mirrored currents are compared to two reference currents by two current comparators. Every reference current needs only one calibration at room temperature. A pattern detection block scans the incoming data for patterns of sufficiently long consecutive 0's or 1's. At the end of such a pattern a valid measurement is present at the output of one of the current comparators. Based on these measurements the digital Automatic Power Control (APC) will adjust the bias (IBIAS) and modulation current (IMOD) setting of the laser driver. Tests show that the chip can stabilize and track the launched optical power with a tolerance of less than 1 dB. In these tests the pattern detection was programmed to sample the current comparators after 5 bytes (32 ns at 1.25 Gbps) of consecutive 1's and 0's. Automatic power control on such short strings of data has not been demonstrated before. Although this laser transmitter was developed for FSAN GPON applications at a speed of 1.25 Gbps upstream, the design concept is generic and can be applied for developing a wide range of burst mode laser transmitters. This chip was developed in a 0.35 µm SiGe BiCMOS process.

  • A Peak-Current-Reduced Full-Swing CMOS Output Driver

    Jae-Yoon SIM  Kee-Won KWON  

     
    LETTER

      Vol:
    E87-C No:6
      Page(s):
    1037-1039

    This letter proposes an output driver which reduces simultaneous switching noise without degradation of rise/fall time. At the start of transition period, the driver optimally uses both VDD and VSS current by switching of on-chip bypass capacitors. The proposed driver achieves 27-percent reduction in peak current with faster transition time.

  • Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits

    Naoko ONO  Ken ONODERA  Kazuhiro ARAI  Keiichi YAMAGUCHI  Hiroyuki YOSHINAGA  Yuji ISEKI  

     
    PAPER-Active Devices and Circuits

      Vol:
    E87-C No:5
      Page(s):
    733-741

    A K-band monolithic driver amplifier with equalizer circuits has been developed. It is necessary for the equalizer circuit to be low losses in the high-frequency range and for its S21 values to increase as the operation frequency increases. In order to realize these features, it is desirable for the equalizer to have element location considering high-frequency current flows. In this paper, we present a novel low-loss, high-pass equalizer circuit layout that has superior characteristics in the high-frequency range. We used a high-pass filter as the equalizer circuit and performed a detailed evaluation of the high-frequency characteristics of the filter circuit test element groups (TEGs) for three layout types. It was found that the best filter circuit layout for the three types consisted of two capacitors and one resistor, placed with parallel connections. The resistor is located at the center and the capacitors are located at both sides of the resistor. This filter is called the CRC-type in this paper. An MMIC test sample, a K-band monolithic amplifier with CRC-type filter circuits, was fabricated. The amplifier had a gain of 21.6 dB, a Rollett stability factor K of 28.9, an input VSWR of 1.63, an output VSWR of 1.92, and a 1 dB compressed output power of 22.6 dBm at 26 GHz.

  • A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors

    Takahiro SHIMADA  Hiromi NOTANI  Yasunobu NAKASE  Hiroshi MAKINO  Shuhei IWADE  

     
    PAPER

      Vol:
    E87-C No:4
      Page(s):
    571-577

    We proposed a push-pull output buffer that maintains the data transmission rate for lower supply voltages. It operates at an internal supply voltage (VDD) of 0.7-1.6 V and an interface supply voltage (VDDX) of 1.0-3.6 V. In low VDDX operation, the output buffer utilizes parasitic bipolar transistors instead of MOS transistors to maintain drivability. Furthermore forward body bias (FBB) control is provided for the level converter in low VDD operation. We fabricated a test chip with a standard 0.15 µm CMOS process. Measurement results indicate that the proposed output buffer achieves 200 Mbps operation at VDD of 0.7 V and VDDX of 1.0 V.

41-60hit(84hit)