We developed piezoresistors with an intrinsic compensation of the offset temperature characteristics. High energy ion implantation was applied to fabricate this type of piezoresistor. The dopant profile of the buried piezoresistor resembles to that of the junction gate field effect transistor (JFET). The buried layer corresponds to a channel of JFET, and the substrate bias corresponds to the gate voltage. Owing to the independent temperature varying parameters, i.e., width of the depletion layer and carrier mobility in the channel, the drain current of the JFET has a temperature independent point at an appropriate gate source voltage. The effect was used in the new type of buried piezoresistor which has a driving point of zero temperature coefficient of resistance at an appropriate gate source voltage.

There have been many investigations of mutual synchronization of oscillators. In this article, N oscillators with the same natural frequencies mutually coupled by one resistor are analyzed. In this system, various synchronization phenomena can be observed because the system tends to minimize the current through the coupling resistor. When the nonlinear characteristics are third-power, we can observe N-phase oscillation, and this system can take (N 1)! phase states. When the nonlinear characteristics are fifth-power, we can observe (N 1),(N 2)3 and 2-phase oscillations as well as N-phase oscillations and we can get much more phase states from this system than that of the system with third-power nonlinear characteristics. Because of their coupling structure and huge number of steady states of the system, our system would be a structural element of cellular neural networks. In this study, it is confirmed that our systems can stably take huge number of phase states by theoretical analysis, computer calculations and circuit experiments.

An efficient algorithm is presented for finding all solutions of piecewise-linear resistive circuits containing sophisticated transistor models such as the Gummel-Poon model or the Shichman-Hodges model. When a circuit contains these nonseparable models, the hybrid equation describing the circuit takes a special structure termed pairwise-separability (or tuplewise-separability). This structure is effectively exploited in the new algorithm. A numerical example is given, and it is shown that all solutions are computed very rapidly.

A novel effective channel length extraction method has been developed, which utilizes the difference between the local threshold voltage of channel region and that of external region. In this method, the dependence of external resistance on Vg is taken into account, and it is not necessary to extract Vth. It is found that the external resistance can be approximated as the linear function of Vg with Vg around Vth. For a 0.4 µm gate length LDD MOSFET, the accuracy and resolution are estimated to be less than 0.02 µm and 0.003 µm, respectively.

In this paper, the relationship between contact materials and sticking characteristics, and stability of contact resistance to obtain excellent contacts for telecommunication relays, is studied. The contact switching current for telecommunication relay is low. Moreover, contact force and opening force in these relay are respectively several mN. Nine kinds of contact materials are selected as a experimental factor. They are Ag, Ag-Ni (Ni: 0.03 to 20%), Ag-Cu 10%, Ag-Pd 60% and Pd-Ru 10%, and are overlaid with gold except Pd-Ru 10%. In this study, contact life tests on a commercial ultra-miniature telecommunication relay by mounting above-mentioned contacts are conducted. The sticking and the contact resistance are monitored at each switching operation in the contact life test. After the life test, the contact surfaces are observed, and the depth of crater, the height of pip and projected concave area are measured, then the relationship between the sticking morphologies and the composition of each material are studied. As the result of this study, the contact sticking of telecommunication rely is assumed to be the result of mechanical locking, and the effects of the Ni content in the Ag-Ni contacts is clarified. Moreover, it is confirmed that the effects of opening force on the sticking characteristics are remarkable.

Composite materials of solid lubricants, such as graphite, MoS2, WS2, etc., and metals are being used as the sliding electrical contacts. However, few reports have so far been presented on the detailed characteristics of such composite materials. It is shown in this report that contact resistance and coefficient of friction of the sliding contact of the composite material of Cu-Nb system against Cu were higher than those of the sliding contact of the composite material of Cu-Sn system against Cu. It was, further, found that composite materials of Cu-Sn system were superior to those of Cu-Nb system being both contact resistances and coefficients of friction lowered. At the same time, it was found that performances of composite materials of Cu-Sn alloy base containing exclusively WS2 were superior to those containing both WS2 and MoS2. It was, therefore, suggested that proper samples suitable for the service conditions should be selected from the composite materials of Cu-Sn system which contain exclusively WS2 for the practical applications.

Plating is applied to protect contact surfaces of contact devices such as switch, relay and connector from contaminations of oxidization and sulfuration etc. Furthermore it is known that the contact resistance can be reduced when there exist plated layers on the contact surfaces which have enough thickness and low resistivity compared with substratum materials. In this paper, contact resistance between plated conductors are calculated using three dimensional finite element method. Similariry, current density distribution in a contact spot with various resistivity of plated layers are shown and relative conductance depends on the contact area fraction with thickness of plated layers are presented.

A globally and quadratically convergent algorithm is presented for solving nonlinear resistive networks containing transistors modeled by the Gummel-Poon model or the Shichman-Hodges model. This algorithm is based on the Katzenelson algorithm that is globally convergent for a broad class of piecewise-linear resistive networks. An effective restart technique is introduced, by which the algorithm converges to the solutions of the nonlinear resistive networks quadratically. The quadratic convergence is proved and also verified by numerical examples.

The electric or electronic circuits have many contact devices such as relay and switch. The contact between two nominally conducting flat surface has a lot of micro contact spots. The constriction resistance of the contact is known to determine the sum of the parallel resistance of the micro contacts and the interaction of them. The constriction resistance of two circular conducting spots was approximately formulated by Greenwood. This formulation shows that the interacted resistance of two circular spots is in inverse proportion to the distance between two conducting spots. It was known that this effect is introduced by the interaction between two conducting spots. However, the condition of interaction in the spots is not clear. Calculating the current density distribution in the spots is important to clarify the condition of interaction. The numerical analysis is very suitable to calculate the current density in the spots. In the fundamental case of the computation of the current density the boundary element method (BEM) is more efficient and accurate than that of the finite element method (FEM) because the boundary condition at the infinite is naturally satisfied and is not required a great number of the element in a wide space. In this paper the current density in the square spots is computed by the BEM. As the distance between two conducting spots becomes small, the current density in the two spots decreases. It becomes clear that the constriction resistance of conducting spots is increased by this effect. The decrease of current density by interaction is not uniformly, that at the near location to the opposite spot is larger than that at the far location in the same spot. In this paper the constriction resistance of two conducting spots is also considered. It was known that the constriction resistance of one conducting spot is not influenced by the form of spot very much. However, that of two conducting spots is not clear. The constriction resistance of two square spots is also computed by the BEM. The computed values of the constriction resistance of two square spots are compared with that of two circular spots by Greenwood's formulation and other results. As the result, it is clear that they have the considerable discrepancy. However, the trend of the variations is almost agree each other.

On the surface of contacts which are exposed to the atmosphere, the reaction with gases in the atmosphere produces contaminant films including oxides. The contact reliability is degraded by the contaminant films. Humidity in the atmospheric environment also influences on the surface of contacts. However, influence of humidity on the surface has not been clarified. In the present paper, influence of humidity on the Cu surface and the oxides (CuO + Cu2O) on it were studied with respect to the thickness of the oxide film and contact resistance characteristics both for static and for sliding contacts. The thickness was measured by ellipsometric analysis. Topographic image affected by humidification was also observed by scanning tunneling microscope (STM). In the atmospheric environment, the clean surface of Cu was found to oxidize with fluctuations of the thickness for lapse of exposure time due to the fluctuations of the humidity. It was also found that the thickness of the oxide film decreases immediately after the humidification, and increases under dehumidification. Changes in contact resistance affected by humidity was corresponding to the change in the film thickness. Immediately after humidification contact resistance decreased, and increased with dehumidification both for static and for sliding contacts. For the mechanism of the influence of humidity on the oxide, chemical reduction of hydrogen generated by decomposition of the absorbed water molecule (H2O) was derived. The clean Cu surface was oxidized by oxygen due to absorbed water molecule and atmosphere.

The former experimental results have already shown that it is oxide films formed on contact surface causing the contact resistance to degrade in dc. breaking arcs for Ag and Pd materials. In order to understand the detailed information about it, the experiments are performed to break dc. inductive load at 20 V, 0.5 A and 1.0 A in nitrogen gas with different oxygen concentrations. The contact surface morphology and surface contamination are evaluated by SEM and AES, respectively. The tested results demonstrate that, for Ag contact, the severe oxidation occurs with increasing oxygen concentration, and the critical value of oxygen concentration is found to be about 10% and 5% in 0.5 A and 1.0 A, respectively, above those values the contact resistance degrades due to the oxide films formed on the contact surface, especially on the anode surface. While, for Pd contacts, a remarkable contact resistance degradation is not found even at 1.0 A in oxigen. Evidence shows that the arc duration, in particular the gaseous phase arc duration affects the anode oxidation, which in turn causes the significant fluctuation of contact resistance.

Gate-controlled negative differential resistance (NDR) due to interband tunneling has been observed at room temperature in a Surface Tunnel Transistor (STT). The STT consists of a highly degenerate p+-drain, an n+-doped channel with an insulated gate, and an n+-source connected to the channel. To demonstrate application as a functional device, a bistable circuit consisting of only one STT and one load resistor was organized and its operation was confirmed. The obtained valley current in the NDR characteristics of the STT, however, is relatively large and limits the device performance. In order to clarify the origin of the valley current, we fabricated p+-n+ tunnel diodes in which growth interruption was done at the pn junction, and investigated the dependence of the NDR characteristics on both the impurity concentration at the regrown interface and the temperature. These measurements indicate that the valley current is mainly caused by the excess tunneling current through traps formed by the residual oxygen at the regrown interface.

An efficient algorithm is presented for solving nonlinear resistive networks. In this algorithm, the techniques of the piecewise-linear homotopy method are introduced to the Katzenelson algorithm, which is known to be globally convergent for a broad class of piecewise-linear resistive networks. The proposed algorithm has the following advantages over the original Katzenelson algorithm. First, it can be applied directly to nonlinear (not piecewise-linear) network equations. Secondly, it can find the accurate solutions of the nonlinear network equations with quadratic convergence. Therefore, accurate solutions can be computed efficiently without the piecewise-linear modeling process. The proposed algorithm is practically more advantageous than the piecewise-linear homotopy method because it is based on the Katzenelson algorithm that is very popular in circuit simulation and has been implemented on several circuit simulators.

A convenient method for determining emitter and base resistances from small signal measurements has been developed. This method is based on Neugroschel's method, but the frequency has been varied instead of varying β0. It is demonstrated that the base resistance was successfully extracted. The extracted emitter resistance depended on the collector current because of the difference between the exact gm value and the approximated one, IC/VT. It has also been shown that the proposed method is more robust than the conventional impedance-circle method even when cross-talk occurs.

Recently, efficient algorithms that exploit the separability of nonlinear mappings have been proposed for finding all solutions of piecewise-linear resistive circuits. In this letter, it is shown that these algorithms can be extended to circuits containing piecewise-linear resistors that are neither voltage nor current controlled. Using the parametric representation for these resistors, the circuits can be described by systems of nonlinear equations with separable mappings. This separability is effectively exploited in finding all solutions. A numerical example is given, and it is demonstrated that all solutions are computed very rapidly by the new algorithm.

Using Ti self-aligned silicide (salicide) process, we fabricated subquarter-micron complementary metal-oxide semiconductor (CMOS) devices, and studied the mechanism of increasing resistivity of TiSi2 on poly-Si gates from 0.075 to 20 µm long and 10 µm wide. In the gates less than 0.1 µm long, we found that agglomeration of TiSi2 takes place during low temperature annealing at 675 for 30 seconds leading to discontinuous TiSi2 lines. The discontinuity of TiSi2 abruptly increases the gate resistance, and remarkably reduces the circuit speed of CMOS ring oscillators. On the other hand, Raman spectroscopy reveals that the phase transition from high-resistivity C49 to low-resistivity C54 occurs in plane TiSi2 by annealing at 800 for 30 seconds, while it does not occur in TiSi2 gates less than 5 µm long. From these results we found that the gate sheet resistance can not be reduced to less than 5 Ω/sq by conventional Ti salicide technology in gates shorter than 0.4 µm due to increase in gate resistance caused by agglomeration and lack of phase transition.

New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.

An exact analysis for magnetostatic surface wave excitation by a single microstrip is presented. Conventional approaches for such an excitation problem do not explain experimental results in a reasonable manner. The theory proposed here explains radiation resistances obtained by experiments, owing to having considered the edge conditions and an expansion form of excitation current on the microstrip properly.

An efficient algorithm is presented for finding all solutions of piecewise-linear resistive circuits. In this algorithm, a simple sign test is performed to eliminate many linear regions that do not contain a solution. This makes the number of simultaneous linear equations to be solved much smaller. This test, in its original form, is applied to each linear region; but this is time-consuming because the number of linear regions is generally very large. In this paper, it is shown that the sign test can be applied to super-regions consisting of adjacent linear regions. Therefore, many linear regions are discarded at the same time, and the computational efficiency of the algorithm is substantially improved. The branch-and-bound method is used in applying the sign test to super-regions. Some numerical examples are given, and it is shown that all solutions are computed very rapidly. The proposed algorithm is simple, efficient, and can be easily programmed.

This paper describes the effective countermeasures for exfoliation of large-sized ceramic capacitors, deterioration of dummy resistors and developement of a spark sensor with UVtrons at 300-500 kW transmitting stations. Cracks and exfoliation were found at the electrode of large-sized ceramic capacitors in the output circuit of the 500 kW transmitter. The exfoliation was caused by the temperature rise and the thermal fatigues at the electrode with the Nickel plating including Irons. A pure Nickel-plated electrode including no Irons and a new soldering method using disk-typed solder with a large adhesive area are employed in order to reduce the temperature rise. The temperature rise of the improved capacitor was 18 lower than the conventional one. Deterioration of ELEMA resistors of the 300 kW dummy antenna was discovered. The damage of the resistor was caused by the concentration of the electric current followed by the thermal stress cycle which made mechanical exhaustion at the electrode. Therefore, oval-shaped type resistors with much longer electric current path (20% up) to suppress the concentration of current flow and much slower temperature rise are newly developed. In case that sparks occurred at DC or RF high voltage impressed sections of the high power transmitting equipment, the discharged points could be seriously damaged by the transmitter energy itself. In orded to prevent this, a spark detector using UV (Ultra violet) trons is developed and installed at the matchign circuit of the 500 kW transmitter. Conventional UV sensors with only one UVtron could not detect feeble discharges and sparks with a duration time of less than 150 ms because of false outputs by the back ground noise. Since choosing three out of four UV trons system is employed, possibility producing a false output will be just one to 445 years theoretically. This means extremely reliable and sensitive spark detection system are constructed. These countermeasures have improved reliability of the transmitting equipment greatly. No damages have been found in the transmitters ever since.