This paper describes IP encapsulation technologies for the Mobile RSVP tunnel in next generation networks. Bandwidth is inherently a scarce network resource, and hence signaling overhead should be minimized as much as possible. However, because of duplicate RSVP messages, the existing RSVP tunnel-based mechanism suffers from bandwidth overhead and tunnel problems. The waste of network resources prevents low-cost network construction and the maximization of integrated network utility, which are the goals of next generation networks, and can lower the reliability of networks with the increase of service subscribers and resultant expansion of resource consumption. To solve these problems and to support end-to-end QoS efficiently, RSVP needs to be changed at a minimum degree. In this paper, a new IP encapsulation mechanism for saving of network resources in the Mobile RSVP tunnel (IPEnc-RSVP) is proposed. In order to compare the proposed mechanism and the existing RSVP tunnel-based mechanism in Mobile IP-based networks, we perform a comparative analysis of bandwidth consumption gain, throughput, mean packet delay, etc., and demonstrate the superiority of the proposed mechanism. In addition, we analyze several performance factors of RSVP protocols by applying the existing RSVP tunnel-based mechanism and the proposed mechanism, respectively.

A normal-distribution-function-shaped superconducting tunnel junction (NDF-STJ) which consists of Nb/Al-AlOx/Al/Nb has been fabricated as an X-ray detector. Current - voltage characteristics were measured at 0.4 K using three kinds of STJs, which have the dispersion parameters σ of 0.25, 0.45 and 0.75. These STJs showed very low subgap leakage current of about 5 nA. By irradiating with 5.9 keV X-rays, we obtained the spectrum of these NDF-STJs. They showed good energy resolution with small magnetic fields of below 3 mT, which is about one-tenth of those for conventional-shaped STJs.

The utilization of a high-Tc superconductor for implementing a superconducting qubit is to be expected. Recent researches on the quantum property of Josephson junctions in high-Tc superconductors indicate that the low energy quasiparticle excitation is weak enough to observe the macroscopic quantum tunneling. Therefore, a detailed study on the quantum property of high-Tc Josephson junctions becomes more important for applications. We show our experimental results of the macroscopic tunneling of current biased intrinsic Josephson junctions in Bi-2212 and its resonant activation in the presence of microwave radiation.

Ultrahigh-speed continuous-tine delta-sigma modulators (DSMs) have been designed by using a fully-differential comparator consisting of resonant-tunneling diodes (RTDs) and HEMTs. Continuous-time lowpass and bandpass filters using HEMTs have also been incorporated to obtain lowpass- and bandpass-type DSMs, respectively. Circuit simulation assuming 0.1-µm InP-based HEMT and RTD technology has revealed a successful operation of the 2nd-order lowpass DSM at a sampling frequency of 20 GHz. The clock frequency was 10 GHz because of the double sampling function of the present comparator. The 2nd-order bandpass DSM has also been designed with a center frequency of 3 GHz. These results clearly show high potential of the present delta-sigma modulators.

A novel resonant tunneling diode (RTD) oscillator is proposed, which overcomes the problems of the conventional RTD oscillators, such as the low-frequency spurious oscillation and the bias instability. Our proposal consists of two RTDs connected serially, and the resonator connected to the node between two RTDs. This circuit separates the oscillation node from the bias nodes, and suppresses the above mentioned problems. This relaxes the severe restriction on the RTD area, and makes it possible to supply higher power to a load. Circuit simulation shows that with this circuit more than 2 mW power can be supplied to the 50 Ω resistive load at 100 GHz using RTDs having 105 A/cm2-peak current density and 20 µm2-area. It also shows that the dc-to-RF conversion efficiency is as good as that of conventional ones. Furthermore, we have studied the extension of this oscillator having 4 RTDs connected serially. Circuit simulations revealed that using this circuit the power can be doubled with a good conversion efficiency.

We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.

We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.

Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.

Tunneling is commonly used in several transition mechanisms. Some of the mechanisms discover the tunnel endpoint automatically by their own means. This paper describes several tunnel discovery mechanisms for IPv6 traversal beyond IPv4 legacy networks and suggests a new mechanism by which the DHCPv4 server can automatically provide configuration information about IPv6-in-IPv4 tunnel. Dual stack nodes attached to IPv4 network can communicate with other IPv6 networks by this mechanism beyond IPv4 networks without user intervention. Implementations have shown that the proposed mechanism can be a convenient and valuable tunnel discovery mechanism in some cases.

A 2-bit operational metal/silicon-oxide-nitride-oxide-silicon (MONOS/SONOS) nonvolatile memory using an asymmetric double-gate (ASDG) MOSFET was studied to double flash memory density. The 2-bit programming and erasing was performed by Fowler-Nordheim (FN) tunneling in a NAND array architecture using individually controlled gates. A threshold voltage shift of programmed states for the 2-bit operation was investigated with the aid of a SILVACO® simulator in both sides of the gate by changing gate workfunctions and tunneling oxide thicknesses. In this paper, the scalability of the device down to 30 nm was demonstrated by numerical simulation. Additionally, guidelines of the 2-bit ASDG nonvolatile memory (NVM) structure and operational conditions were proposed for "program," "read," and "erase."

In this paper, we examine the efficiency of tunneling techniques since they will accelerate multicast deployment. Our motivation is that, despite the many proposals focused on tunneling techniques, their impact on multicast efficiency has yet to be assessed sufficiently. First, the structure of multicast delivery trees is examined based on the seminal work of Phillips et al. [26]. We then quantitatively assess the impact of tunneling, such as loads imposed on the tunnel endpoints and redundant traffic. We also formulate a critical size of multicast island, above which the loads are suddenly diminished. Finally, a unique delivery tree model is introduced, which is so simple yet practical, to better understand the performance of the multicast-related protocols. This paper is the first to formulate the impact of tunneling.

In this paper, we discuss the efficiency of tunneling techniques which are expected to accelerate multicast deployment. Our motivation is that, despite the proposal of many tunneling techniques, no paper has studied their impact on multicast efficiency. Through detailed computer experiments, we find that there is a critical size of multicast island, above which the loads imposed on tunneling endpoints are suddenly diminished. In addition, multicast islands equaling or exceeding the critical size reduce the overhead of forwarding states on routers. We also find a scaling law between the critical size and group size. Based on these findings, we present simple guidelines on using tunneling when deploying multicast systems. A possible explanation for our findings is uncovered by a simple analysis. Our work is the first to evaluate the impact of tunneling and clarify conditions in which multicast deployment is well supported by tunneling.

The radiation properties of oscillating electric dipoles are studied theoretically for three and four layered systems including a single metallic slab based on angular spectrum representation of vector spherical waves. One of the remarkable results obtained is the transmission energy spectrum showing strong dependence on the thickness of a dielectric layer placed between oscillating electric dipole and metallic surface, which explains the experimental results of molecular fluorescence into surface plasmon modes. The theory based on angular spectrum representation and tunneling current provides us with a clear identification of plasmonic excitation transfer, transmission loss associated with plasmon transport in metallic layer, and energy dissipation or quenching of excitation due to surface plasmon excitation at the metallic surface in relation to the characteristic complex wave number of evanescent waves.

At frequencies in the GHz range, an electrical connector must be considered as part of an electromagnetic transmission line. This paper reviews the effect of signal frequency on constriction resistance, interfacial capacitance and contact inductance at an electrical interface in a high speed connector. The deleterious effects of contact degradation at pin-receptacle junctions on transmitted signal integrity, are addressed. For frequencies in the GHz range, an electrical interface becomes capacitively coupled if contact resistance increases sufficiently. Contact deterioration may also lead to the generation of parasitic third-order harmonics that contribute to loss of signal integrity.

In recent years, the Internet has come to be able to be used at higher speed and more cheaply everywhere as the broadband service and the wireless LAN service have been provided by various ISPs. In such a ubiquitous environment, a demand for mobile computing environments in the intranet and easy access from remote sites has been increasing greatly as well as the Internet. To meet this requirement, we have proposed a Logical Office service, which is a kind of the mobile VLAN, and enables terminal plug and play, layer two tunneling, and ubiquitous communication. This paper newly proposes that the offer of the IP mobility to not only the movement of the terminal but also existing network services be possible the Logical Office service which we developed. As a result, it was verified to operate existing network services such as wirelesses LAN on the Logical Office service, and for newly existing network services to able to have the IP mobility.

We present measurements of Gate-Induced-Drain-Leak-age at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage VDG, we also observed Trap-Assisted-Tunneling leakage current at lower VDG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.

A direct tunneling memory (DTM) with ultra-thin tunnel oxide and depleted floating gate has been proposed for low power embedded RAM. To achieve excellent charge retention characteristics with ultra-thin tunnel oxide, floating gate depletion is adopted to utilize the band bending at the interface between floating gate and tunnel oxide in charge retention period. The depleted floating gate is also effective to suppress the degradation of program/erase speed caused by the gate re-oxidation process. These effects were evaluated by the device and process simulations and confirmed by the experimental data. As a consequence, both fast programming time and superior retention time have been achieved, which is a promising performance as a low power embedded RAM for system-on-a-chip (SoC) applications.

We briefly survey recent developments in the thin film synthesis and junction fabrication of MgB2 toward superconducting electronics. The most serious problem in the thin film synthesis of MgB2 is the high vapor pressure required for phase stability. This problem makes in-situ film growth difficult. However, there has been substantial progress in thin film technology for MgB2 in the past three years. The low-temperature thin-film process in a UHV chamber can produce high-quality MgB2 films with Tc 35 K. Furthermore, technology to produce single-crystal epitaxial MgB2 films has recently been developed by using hybrid physical-chemical vapor deposition. With regard to Josephson junctions, various types of junctions have been fabricated, all of which indicate that MgB2 has potential for superconducting devices that operate at 20-30 K, the temperature reached by current commercial cryocoolers.

Ultrahigh-speed compact flash analog-to-digital converters (ADCs) using resonant-tunneling diodes (RTDs) have been designed to demonstrate a high potential of RTD circuits. Novel multi-input subtraction gates are introduced to the encoder to obtain a compact circuit configuration. By assuming 0.1-µm InP-based RTD/HEMT technology, circuit simulations of 4-bit 10-GHz flash ADCs are carried out. It is found that the device counts of the ADC with an 8-input gate are one third that of the ADC with 4-input gates. This leads to a reduction in the power dissipation by 50%. In addition, bandwidths of more than 20 GHz have been obtained for 4-bit and 5-bit ADCs at a sampling frequency of 10 GHz.

Next generation wired/wireless networks will be based on IP technology. In the IP based networks, it is crucially required to support seamless mobility especially for proving real-time services in the mobile environment. The conventional Mobile IP protocols cannot satisfy such seamless mobility requirements for real-time services. Therefore various extensions of Mobile IP are being proposed. In this paper, we propose a new handover scheme to enhance the existing tunnel-based fast handover method, which is a typical Mobile IP extension to support seamless mobility. It is shown that the proposed method reduces the traffic overhead in the networks. It is expected that the proposed method will be particularly useful in the IP-based networks in which there are a number of users simultaneously using the long-lived real-time services, or in the condition that the traffic overhead is considered as a critical performance measure.