The magnetic field resolution of the tunnel magneto-resistive (TMR) sensors has been improving and it reaches below 1.0 pT/Hz0.5 at low frequency. The real-time measurement of the magnetocardiography (MCG) and the measurement of the magnetoencephalography (MEG) have been demonstrated by developed TMR sensors. Although the MCG and MEG have been applied to diagnosis of diseases, the conventional MCG/MEG system using superconducting quantum interference devices (SQUIDs) cannot measure the signal by touching the body, the body must be fixed, and maintenance costs are huge. The MCG/MEG system with TMR sensors operating at room temperature have the potential to solve these problems. In addition, it has the great advantage that it does not require a special magnetic shielded room. Further developments are expected to progress to maximize these unique features of TMR sensors.

Series-connection of resonant-tunneling diodes (RTDs) has been considered to be efficient in upgrading the output power when it is introduced to oscillator architecture. This work is for clarifying the same architecture also contributes to increasing oscillation frequency because the device parasitic capacitance is reduced M times for M series-connected RTD oscillator. Although this mechanism is expected to be universal, we restrict the discussion to the recently proposed multiphase oscillator utilizing an RTD oscillator lattice loop. After explaining the operation principle, we evaluate how the oscillation frequency depends on the number of series-connected RTDs through full-wave calculations. In addition, the essential dynamics were validated experimentally in breadboarded multiphase oscillators using Esaki diodes in place of RTDs.

Studies on intrinsic Josephson junctions (IJJs) of cuprate superconductors are reviewed. A system consisting of a few IJJs provides phenomena to test the Josephson phase dynamics and its interaction between adjacent IJJs within a nanometer scale, which is unique to cuprate superconductors. Quasiparticle density of states, which provides direct information on the Cooper-pair formation, is also revealed in the system. In contrast, Josephson plasma emission, which is an electromagnetic wave radiation in the sub-terahertz frequency range from an IJJ stack, arises from the synchronous phase dynamics of hundreds of IJJs coupled globally. This review summarizes a wide range of physical phenomena in IJJ systems having capacitive and inductive couplings with different nanometer and micrometer length scales, respectively.

We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.

We achieved detailed characterization of resonant tunneling chaos generator circuits in microwave frequency range. The circuit is analogous to Duffing oscillator, where the third-order nonlinear potential term is emulated by the nonlinear current-voltage curve of the resonant tunneling diode. The circuit includes a periodic reset mechanism to output identical chaos signal, which is essential to observe chaos signal on a sampling oscilloscope. Though this was shown to be effective in our previous papers, the length of the waveforms to observe is limited to rather short period, and it was unclear if this technique can be used for detailed characterization of such high-frequency chaos. In this paper, we improved the circuit design to observe longer waveforms, and demonstrated that the detailed characterization is possible using this periodic resetting technique with a sampling oscilloscope. The hybrid integration scheme is also used in this paper, which allows the easiest and shortest way to mimic a circuit as per circuit design, and precise estimation of circuit parameters aiming to eliminate circuit-related abnormalities. We provide deep insight into the dynamics associated with our circuit, starting from the single period, double period, chaos, and triple period regimes, by extracting power spectra, return maps, phase portraits, and bifurcation diagrams from acquired time series using sampling oscilloscope. Our method to study microwave chaotic signals can be applied to much higher frequency ranges, such as THz frequency range.

Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).

S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.

Website Fingerprinting (WF) enables a passive attacker to identify which website a user is visiting over an encrypted tunnel. Current WF attacks have two strong assumptions: (i) specific tunnel, i.e., the attacker can train on traffic samples collected in a simulated tunnel with the same tunnel settings as the user, and (ii) pseudo-open-world, where the attacker has access to training samples of unmonitored sites and treats them as a separate class. These assumptions, while experimentally feasible, render WF attacks less usable in practice. In this paper, we present Gene Fingerprinting (GF), a new WF attack that achieves cross-tunnel transferability by generating fingerprints that reflect the intrinsic profile of a website. The attack leverages Zero-shot Learning — a machine learning technique not requiring training samples to identify a given class — to reduce the effort to collect data from different tunnels and achieve a real open-world. We demonstrate the attack performance using three popular tunneling tools: OpenSSH, Shadowsocks, and OpenVPN. The GF attack attains over 94% accuracy on each tunnel, far better than existing CUMUL, DF, and DDTW attacks. In the more realistic open-world scenario, the attack still obtains 88% TPR and 9% FPR, outperforming the state-of-the-art attacks. These results highlight the danger of our attack in various scenarios where gathering and training on a tunnel-specific dataset would be impractical.

A hard-type oscillator is defined as an oscillator having stable fixed points within a stable limit cycle. For resonant tunneling diode (RTD) oscillators, using hard-type configuration has a significant advantage that it can suppress spurious oscillations in a bias line. We have fabricated hard-type oscillators using an InGaAs-based RTD, and demonstrated a proper operation. Furthermore, the oscillating properties have been compared with a soft-type oscillator having a same parameters. It has been demonstrated that the same level of the phase noise can be obtained with a much smaller power consumption of approximately 1/20.

This paper theoretically presents that a terahertz (THz) oscillator using a resonant tunneling diode (RTD) and a rectangular cavity, which has previously been proposed, can radiate high output power by the impedance matching between RTD and load through metal-insulator-metal (MIM) capacitors. Based on an established equivalent-circuit model, an equation for output power has been deduced. By changing MIM capacitors, a matching point can be derived for various sizes of rectangular-cavity resonator. Simulation results show that high output power is possible by long cavity. For example, a high output power of 5 mW is expected at 1 THz.

A scheme is proposed for generation of large-amplitude short pulses using a transmission line with regularly spaced series-connected tunnel diodes (TDs). In the case where the loaded TD is unique, it is established that the leading edge of the inputted pulse moves slower than the trailing edge, when the pulse amplitude exceeds the peak voltage of the loaded TD; therefore, the pulse width is autonomously reduced through propagation in the line. In this study, we find that this property is true even when the several series-connected TDs are loaded periodically. By these mechanisms, the TD line succeeds in generating large and short pulses. Herein, we clarify the design criteria of the TD line, together with both numerical and experimental validation.

A non-volatile memory (NVM) employing MTJ has a lot of strong points such as read/write performance, best endurance and operating-voltage compatibility with standard CMOS. However, it consumes a lot of energy when writing the data. This becomes an obstacle when applying to battery-operated mobile devices. To solve this problem, we propose an approach to augment the capability of the precision scaling technique for the write operation in NVM. Precision scaling is an approximate computing technique to reduce the bit width of data (i.e. precision) for energy reduction. When writing image data to NVM with the precision scaling, the write energy and the image quality are changed according to the write time and the target bit range. We propose an energy-efficient approximate storing scheme for non-volatile flip-flops and a magnetic random-access memory (MRAM) that allows us to write the data by optimizing the bit positions to split the data and the write time for each bit range. By using the statistical model, we obtained optimal values for the write time and the targeted bit range under the trade-off between the write energy reduction and image quality degradation. Simulation results have demonstrated that by using these optimal values the write energy can be reduced up to 50% while maintaining the acceptable image quality. We also investigated the relationship between the input images and the output image quality when using this approach in detail. In addition, we evaluated the energy benefits when applying our approach to nine types of image processing including linear filters and edge detectors. Results showed that the write energy is reduced by further 12.5% at the maximum.

We propose a compact magnetic tunnel junction (MTJ) model for circuit simulation by de-facto standard SPICE in this paper. It is implemented by Verilog-A language which makes it easy to simulate MTJs with other standard devices. Based on the switching probability, we smoothly connect the adiabatic precessional model and the thermal activation model by using an interpolation technique based on the cubic spline method. We can predict the switching time after a current is applied. Meanwhile, we use appropriate physical models to describe other MTJ characteristics. Simulation results validate that the model is consistent with experimental data and effective for MTJ/CMOS hybrid circuit simulation.

In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.

The transition dynamics of a multistable tunnel-diode oscillator is characterized for modulating amplitude of outputted oscillatory signal. The base oscillator possesses fixed-point and limit-cycle stable points for a unique bias voltage. Switching these two stable points by external signal can render an efficient method for modulation of output amplitude. The time required for state transition is expected to be dominated by the aftereffect of the limiting point. However, it is found that its influence decreases exponentially with respect to the amplitude of external signal. Herein, we first describe numerically the pulse generation scheme with the transition dynamics of the oscillator and then validate it with several time-domain measurements using a test circuit.

Aluminum Electrolytic Capacitors are widely used as the smoothing capacitors in power converter circuits. Recently, there are a lot of studies to detect the residual life of the smoothing Aluminum Electrolytic Capacitors from the information of the operational circuit, such as the ripple voltage and the ripple current of the smoothing capacitor. To develop this kind of technology, more precise impedance models of Aluminum Electrolytic Capacitors become desired. In the case of the low-temperature operation of the power converters, e.g., photovoltaic inverters, the impedance of the smoothing Aluminum Electrolytic Capacitor is the key to avoid the switching element failure due to the switching surge. In this paper, we introduce the impedance calculation model of Aluminum Electrolytic Capacitors, which provides accurate impedance values in wide temperature and frequency ranges.

The authors have been investigating the deterioration process of Au-plated slip-ring and Ag-Pd brush system with lubricant to realize stable and long lifetime. Through the past tests, it can be made clear that lubricant is very important for long lifetime, and a simple model of the deterioration process was proposed. However, it is still an issue how the lubricant is deteriorated and also what the relation between lubricant deterioration and contact voltage behavior is. In this paper, the contact voltage waveforms were regularly recorded during the test, and analyzed to obtain the time change of peak voltage and standard deviation during one rotation. Based on these results, it is discussed what happens at the interface between ring and brush with the lubricant. And the following results are made clear. The fluctuation of voltage waveforms, especially peaks of pulse-like fluctuation more easily occurs for minus rings than for plus rings. Further, peak values of the pulse-like fluctuation rapidly decreases and disappear at lower rotation speed as mentioned in the previous works. In addition, each peaks of the pulse-like fluctuation is identified at each position of the ring periphery. From these results, it can be assumed that lubricant film exists between brush and ring surface and electric conduction is realized by tunnel effect. In other words, it can be made clear that the fluctuation would be caused by the lubricant layer, not only by the ring surface. Finally, an electric conduction model is proposed and the above results can be explained by this model.

Gold nanoparticles (GNPs) are often used as island electrodes of single-electron (SE) devices. One of technical challenges in fabrication of SE devices with GNPs is the placement of GNPs in a nanogap between two lead electrodes. Utilization of dielectrophoresis (DEP) phenomena is one of possible solutions for this challenge, whereas the fabrication process with DEP includes stochastic aspects. In this brief paper, we present our experimental results on electric resistance of GNP arrays assembled by DEP. More than 300 pairs of electrodes were investigated under various DEP conditions by trial and error approach. We evaluated the relationship between the DEP conditions and the electric resistance of assembled GNP arrays, which would indicate possible DEP conditions for fabrication of SE devices.

A one-dimensional lattice of tunnel-diode oscillators is investigated for potential high-speed frequency divider. In the evolution of the investigated lattice, the high-frequency oscillation dominates over the low-frequency oscillation. When a base oscillator is connected at the end, and generates oscillatory signals with a frequency higher than that of the synchronous lattice oscillation, the oscillator output begins to move in the lattice. This one-way property guarantees that the oscillation dynamics of the lattice have only slight influence on the oscillator motion. Moreover, counter-moving pulses in the lattice exhibit pair annihilation through head-on collisions. These lattice properties enable an efficient frequency division method. Herein, the operating principles of the frequency divider are described, along with a numerical validation.

We numerically demonstrate a possibility on-off keying (OOK) type of modulation over tens gigabits per second for sub-terahertz radiation in our proposed wireless transmitter device structure towards radio over fiber (RoF) technology. The integrated device consists of an InP-based compound semiconductor resonant tunneling diode (RTD) adjacent to an InP-based photo diode (PD), a self-complementary type of bow-tie antenna (BTA), external microstrip lines. These integration structures are carefully designed to obtain robust relaxation oscillation (RO) due to the negative differential conductance (NDC) characteristic of the RTD and the nonlinearity of the NDC. Moreover, the device is designed to exhibit OOK modulation of RO due to photo current from the PD inject into the RTD. Electromagnetic simulations and nonlinear equivalent circuit model of the whole device structure are established to perform large signal analysis numerically with considerations of previously measured characteristics of the triple-barrier RTD.