With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the degradation on UWB RF circuit performance can be minimized. Besides, the fast turn-on design on the low-capacitance SCR without increasing the I/O loading capacitance is investigated and applied to an UWB RF power amplifier (PA). The PA co-designed with SCR in the waffle layout structure has been fabricated. Before ESD stress, the RF performances of the ESD-protected PA are as well as that of the unprotected PA. After ESD stress, the unprotected PA is seriously degraded, whereas the ESD-protected PA still keeps the performances well.

The concept of personal networks is very user-centric and representative for the next generation networks. However, the present security mechanism does not consider at all what happens whenever a mobile node (device) is compromised, lost or stolen. Of course, a compromised, lost or stolen mobile node (device) is a main factor to leak stored secrets. This kind of leakage of stored secrets remains a great danger in the field of communication security since it can lead to the complete breakdown of the intended security level. In order to solve this problem, we propose a 3-way Leakage-Resilient and Forward-Secure Authenticated Key Exchange (3LRFS-AKE) protocol and its security architecture suitable for personal networks. The 3LRFS-AKE protocol guarantees not only forward secrecy of the shared key between device and its server as well as providing a new additional layer of security against the leakage of stored secrets. The proposed security architecture includes two different types of communications: PN wide communication and communication between P-PANs of two different users. In addition, we give a performance evaluation and numerical results of the delay generated by the proposed security architecture.

This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.

This paper presents a method for markerless human motion capture using a single camera. It uses tree-based filtering to efficiently propagate a probability distribution over poses of a 3D body model. The pose vectors and associated shapes are arranged in a tree, which is constructed by hierarchical pairwise clustering, in order to efficiently evaluate the likelihood in each frame. A new likelihood function based on silhouette matching is proposed that improves the pose estimation of thinner body parts, i.e. the limbs. The dynamic model takes self-occlusion into account by increasing the variance of occluded body-parts, thus allowing for recovery when the body part reappears. We present two applications of our method that work in real-time on a Cell Broadband EngineTM: a computer game and a virtual clothing application.

Millimeter-waves integrated circuits offer a unique opportunity for a holistic design approach encompassing RF, analog, and digital, as well as radiation and electromagnetics. The ability to deal with the complete system covering a broad range from the digital circuitry to on-chip antennas and everything in between offers unparalleled opportunities for completely new architectures and topologies, which were previously impossible due the traditional partitioning of various blocks in conventional design. This can open a plethora of new architectural and system level innovation within the integrated circuit platform. This paper reviews some of the challenges and opportunities for mm-wave ICs and presents several solutions to them.

Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small χmin values (2-3%) were achieved in a wide temperature range of 60-200 under the stoichiometric condition. From TEM observation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge structures was guaranteed up to 400. These results suggested that growth at a low temperature (<200) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

In this review paper we showcase recent activities on silicon photonics science and technology research in Hong Kong regarding two important topical areas--microresonator devices and optical nonlinearities. Our work on silicon microresonator filters, switches and modulators have shown promise for the nascent development of on-chip optoelectronic signal processing systems, while our studies on optical nonlinearities have contributed to basic understanding of silicon-based optically-pumped light sources and helium-implanted detectors. Here, we review our various passive and electro-optic active microresonator devices including (i) cascaded microring resonator cross-connect filters, (ii) NRZ-to-PRZ data format converters using a microring resonator notch filter, (iii) GHz-speed carrier-injection-based microring resonator modulators and 0.5-GHz-speed carrier-injection-based microdisk resonator modulators, and (iv) electrically reconfigurable microring resonator add-drop filters and electro-optic logic switches using interferometric resonance control. On the nonlinear waveguide front, we review the main nonlinear optical effects in silicon, and show that even at fairly modest average powers two-photon absorption and the accompanied free-carrier linear absorption could lead to optical limiting and a dramatic reduction in the effective lengths of nonlinear devices.

This paper reviews recent world-wide progress in silicon-based photonics-and-optoelectronics in order to provide a context for the papers in this special section of the IEICE Transactions. The impact of present and potential applications is discussed.

The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.

We propose and demonstrate a simple one-bus two-ring configuration where the two rings are mutually coupled that has advantages over the one-ring structure. Unlike a one cavity system, it can exhibit near critically-coupled transmission with a broader range of loss. It can also significantly enhance the cavity finesse by simply making the second ring twice the size of the bus-coupled one, with the enhancement proportional to the intensity buildup in the second ring.

Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called "silicon photonics." In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission and amplification devices for silicon photonics. We have concentrated to investigate an erbium silicate (Er2SiO5) as a light source medium for silicon photonics. To mention the particular features, this material has a layered structure with 0.86-nm period and a large amount of Er (25at%) as its constituent. The single crystalline nature gives several remarkable properties for the application to silicon photonics. We also discuss our recent studies of Er2SiO5 and a possibility of the shorter waveguide amplifier.

We propose a method to prevent the degradation of decoded MPEG pictures caused by video transmission over error-prone networks. In this paper, we focus on the error concealment that is processed at the decoder without using any backchannels. Though there have been various approaches to this problem, they generally focus on minimizing the degradation measured frame by frame. Although this frame-level approach is effective in evaluating individual frame quality, in the sense of human perception, the most noticeable feature is the spatio-temporal discontinuity of the image feature in the decoded video image. We propose a novel error concealment algorithm comprising the combination of i) A spatio-temporal error recovery function with low processing cost, ii) A MB-based image fidelity tracking scheme, and iii) An adaptive post-filter using the fidelity information. It is demonstrated by experimental results that the proposed algorithm can significantly reduce the subjective degradation of corrupted MPEG video quality with about 30 % of additional decoding processing power.

The error resilient entropy coding (EREC) provides efficient resynchronization method to the coded bitstream, which might be corrupted by transmission errors. The technique has been given more prominence, nowadays, because it achieves fast resynchronization without sizable overhead, and thereby provides graceful quality degradation according to the network conditions. This paper presents a novel framework to analyze the performance of EREC in terms of the error probability in decoding a basic resynchronization unit (RU) for various error prone networks. In order to show the feasibility of the proposed framework, this paper also proposes a novel EREC algorithm based on the slightly modified H.263 bitstream syntax. The proposed scheme minimizes the effect of errors on low frequency DCT coefficients and incorporates near optimal channel-matched searching pattern (SP), which guarantees the best possible quality of reproduced video. Given the number of bits generated for each RU, the near optimal SP is produced by the proposed iterative deterministic partial SP update method, which reduces the complexity of finding optimal solution, O((N-1)!), to O(m·N2). The proposed EREC algorithm significantly improves the decoded video quality, especially when the bit error rate is in the rage of 10-3-10-4. Up to 5 dB enhancement of the PSNR value was observed in a single video frame.

In this letter, the fabrication of a compact and high performance semi-lumped coplanar waveguide low-pass filter (CPW-LPF) on high resistivity silicon (HRS) substrate at millimeter wave is proposed. The design procedure and the equivalent circuit of the proposed semi-lumped CPW-LPF is discussed. The filter structure of is very simple but its performances is fairly good. This designed filter at cutoff frequency fc of 31 GHz has very good measured characteristics including the low insertion loss, sharp rejection and low group delay, due to the reduced substrate loss of HRS. Experimental results of the fabricated filter show a good agreement with the predicted results.

In this paper, we discuss the relationship between the test generation complexity for path delay faults (PDFs) and that for stuck-at faults (SAFs) in combinational and sequential circuits using the recently introduced τk-notation. On the other hand, we also introduce a class of cyclic sequential circuits that are easily testable, namely two-column distributive state-shiftable finite state machine realizations (2CD-SSFSM). Then, we discuss the relevant conjectures and unsolved problems related to the test generation for sequential circuits with PDFs under different clock schemes and test generation models.

Electromechanical switching devices such as relays may be surprisingly forgiving to occasional, but temporary, electrical stress beyond specification. Consequently delayed openings due to welded contacts on the order of milliseconds usually have been unnoticed and hence have not been reason for concern. However, as electrical systems of vehicles are getting "smarter" and more and more diagnostic routines are being implemented, even such short delay times may be translated as errors. Pre-conditioning contact surfaces has been explored as a measure to increase the welding resistance and eliminate contact opening delays. The 20-A-class relay investigated has been optimized to break occasional current peaks up to 80 ADC.

In this paper, a method of separating the effects of the thermal diffusivity, durations and integral powers of the bridge and arc on the temperature rise of AgPd contacts was proposed. First, the effects of the Pd content on the durations and integral powers of the bridge and arc, and the temperature rise of the contacts were discussed. Because the integral power of bridge was larger than that of the arc under our experimental conditions of 40 V open-circuit, 5 A close-circuit and 100 µm/s opening velocity, the temperature rise of the contacts was dominated by the bridge. No remarked difference in bridge duration can be seen among the six materials. Although the integral power of the bridge in the case of Pd was maximum, the maximum temperature rise of the contact was observed in the case of AgPd60. To clarify the contribution of each factor, the effect of thermal diffusivity on the temperature rise of the contact was evaluated by the finite-difference time-domain (FDTD) method. In the case of Pd, because its thermal diffusivity was largest, heat diffused rapidly. On the other hand, the thermal diffusivity in the case of AgPd60 was small, and heat diffused slowly to the holders. The maximum temperature rise was observed in the case of AgPd60. It was demonstrated that the proposed method of separating the effects of thermal diffusivity, durations and integral powers of the bridge and arc on the temperature rise of contacts is effective in enabling us to understand contact phenomena.

The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO2 films is described. Assuming a two-step trap-assisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-path of hole in SiO2 films and an atomic structure of the trap site by the O vacancy model.

Novel functionality and material were developed for Si-photonics in this study. Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a GaSb based quantum well (QW) on a Si substrate. The emission wavelength of QW was 1.55 µm at room temperature, so that the new function can be developed on Si-photonics using this QW.

A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100 without generating cracks has been demonstrated.