We evaluated soft-error tolerance by heavy-ion irradiation test on three-types of flip-flops (FFs) named the standard FF (STDFF), the dual feedback recovery FF (DFRFF), and the DFRFF with long delay (DFRFFLD) in 22 and 65 nm fully-depleted silicon on insulator (FD-SOI) technologies. The guard-gate (GG) structure in DFRFF mitigates soft errors. A single event transient (SET) pulse is removed by the C-element with the signal delayed by the GG structure. DFRFFLD increases the GG delay by adding two more inverters as delay elements. We investigated the effectiveness of the GG structure in 22 and 65 nm. In 22 nm, Kr (40.3 MeV-cm2/mg) and Xe (67.2 MeV-cm2/mg) irradiation tests revealed that DFRFFLD has sufficient soft-error tolerance in outer space. In 65 nm, the relationship between GG delay and CS reveals the GG delay time which no error was observed under Kr irradiation.

Energy harvesting has been widely investigated as a potential solution to supply power for Internet of Things (IoT) devices. Computing devices must operate intermittently rather than continuously, because harvested energy is unstable and some of IoT applications can be periodic. Therefore, processors for IoT devices with intermittent operation must feature a hibernation mode with zero-standby-power in addition to energy-efficient normal mode. In this paper, we describe the layout design and measurement results of a nonvolatile standard cell memory (NV-SCM) and nonvolatile flip-flops (NV-FF) with a nonvolatile memory using Fishbone-in-Cage Capacitor (FiCC) suitable for IoT processors with intermittent operations. They can be fabricated in any conventional CMOS process without any additional mask. NV-SCM and NV-FF are fabricated in a 180nm CMOS process technology. The area overhead by nonvolatility of a bit cell are 74% in NV-SCM and 29% in NV-FF, respectively. We confirmed full functionality of the NV-SCM and NV-FF. The nonvolatile system using proposed NV-SCM and NV-FF can reduce the energy consumption by 24.3% compared to the volatile system when hibernation/normal operation time ratio is 500 as shown in the simulation.

It is very important to design an embedded real-time system as a fault-tolerant system to ensure dependability. In particular, when a power failure occurs, restart processing after power restoration is required in a real-time system using a conventional processor. Even if power is restored quickly, the restart process takes a long time and causes deadline misses. In order to design a fault-tolerant real-time system, it is necessary to have a processor that can resume operation in a short time immediately after power is restored, even if a power failure occurs at any time. Since current embedded real-time systems are required to execute many tasks, high schedulability for high throughput is also important. This paper proposes a non-stop microprocessor architecture to achieve a fault-tolerant real-time system. The non-stop microprocessor is designed so as to resume normal operation even if a power failure occurs at any time, to achieve little performance degradation for high schedulability even if checkpoint creations and restorations are performed many times, to control flexibly non-volatile devices through software configuration, and to ensure data consistency no matter when a checkpoint restoration is performed. The evaluation shows that the non-stop microprocessor can restore a checkpoint within 5µsec and almost hide the overhead of checkpoint creations. The non-stop microprocessor with such capabilities will be an essential component of a fault-tolerant real-time system with high schedulability.

This paper proposes a technique that increases the lifetime of large scale integration (LSI) devices. As semiconductor technology improves at miniaturizing transistors, aging effects due to bias temperature instability (BTI) seriously affects their lifetime. BTI increases the threshold voltage of transistors thereby also increasing the delay of an electronics device, resulting in failures due to timing violations. To compensate for aging-induced timing violations, we exploit configurable approximate computing. Assuming that target circuits have exact and approximate modes, they are configured for the approximate mode if an aging sensor predicts violations. Experiments using an example circuit revealed an increase in its lifetime to >10 years.

This letter reveals that an edge-triggered master-slave flip-flop (FF) using well-known soft error tolerant DICE (dual interlocked storage cell) is vulnerable to soft errors occurring around clock edge. This letter presents a design of a soft error tolerant FF based on the master-slave FF using DICE. The proposed design modifies the connection between the master and slave latches to make the FF not vulnerable to these errors. The hardware overhead is almost the same as that for the original edge-triggered FF using the DICE.

A novel low power sense-amplifier based flip-flop (FF) is presented. By using a simplified SRAM based latch design and pass transistor logic (PTL) circuit scheme, the transistor-count of the FF design is greatly reduced as well as leakage power performance. The performance claims are verified through extensive post-layout simulations. Compared to the conventional sense-amplifier FF design, the proposed circuit achieves 19.6% leakage reduction. Moreover, the delay, and area are reduced by 21.8% and 31%, respectively. The performance edge becomes even better when the flip-flop is integrated in N-bit register file.

This paper describes a design methodology for process variation aware D-Flip-Flop (DFF) using regression analysis. We propose to use a regression analysis to model the worst-case delay characteristics of a DFF under process variation. We utilize the regression equation for transistor width tuning of the DFF to improve its worst-case delay performance. Regression analysis can not only identify the performance-critical transistors inside the DFF, but also shows these impacts on DFF delay performance in quantitative form. Proposed design methodology is verified using Monte-Carlo simulation. The result shows the proposed method achieves to design a DFF which has similar or better delay characteristics in comparison with the DFF designed by an experienced cell designer.

We propose a radiation-hardened Flip-Flop (FF) with stacked transistors based on the Adaptive Coupling Flip-Flop (ACFF) with low power consumption in a 65 nm FDSOI process. The slave latch in ACFF is much weaker against soft errors than the master latch. We design several FFs with stacked transistors in the master or slave latches to mitigate soft errors. We investigate radiation hardness of the proposed FFs by α particle and neutron irradiation tests. The proposed FFs have higher radiation hardness than a conventional DFF and ACFF. Neutron irradiation and α particle tests revealed no error in the proposed AC Slave-Stacked FF (AC_SS FF) which has stacked transistors only in the slave latch. We also investigate radiation hardness of the proposed FFs by heavy ion irradiation. The proposed FFs maintain higher radiation hardness up to 40 MeV-cm2/mg than the conventional DFF. Stacked inverters become more sensitive to soft errors by increasing tilt angles. AC_SS FF achieves higher radiation hardness than ACFF with the performance equivalent to that of ACFF.

In this paper, we propose a low-power circuit-shared static flip-flop (CS2FF) for extremely low power digital VLSIs. The CS2FF consists of five static NORs and two inverters (INVs). The CS2FF utilizes a positive edge of a buffered clock signal, which is generated from a root clock, to take data into a master latch and a negative edge of the root clock to hold the data in a slave latch. The total number of transistors is only 24, which is the same as the conventional transmission-gate flip flop (TGFF) used in the most standard cell libraries. SPICE simulations in 0.18-µm standard CMOS process demonstrated that our proposed CS2FF achieved clock-to-Q delay of 18.3ns, setup time of 10.0ns, hold time of 5.5ns, and power dissipation of 9.7nW at 1-MHz clock frequency and 0.5-V power supply. The physical design area increased by 16% and power dissipation was reduced by 13% compared with those of conventional TGFF. Measurement results demonstrated that our proposed CS2FF can operate at 0.352V with extremely low energy of 5.93fJ.

Parameter variations in nanometer process technology are one of the major design challenges. They cause delay to be increased on the critical path and may change the logic level of internal nodes. The basic concept to solve these problems at the circuit level, design-for-variability (DFV), is to add an error handling circuit to the conventional circuits so that they are robust to nanometer related variations. The state-of-the-art variation-aware flip flops are mainly evolved from aggressive dynamic voltage and frequency scaling (DVFS) -based low-power application systems which handle errors due to the scaled supply voltage. However, they only detect the timing errors and cannot correct the errors. We propose a variation-aware flip flop which can detect and correct the timing error efficiently. The experimental results show that the proposed variation-aware flip flop is more robust and lower power than the existing approaches.

We measure neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65-nm bulk CMOS process in order to evaluate dependence of MCUs on cell distance and well-contact density using four different shift registers. Measurement results by accelerated tests show that MCU/SEU is up to 23.4% and it is exponentially decreased by the distance between latches on FFs. MCU rates can be drastically reduced by inserting well-contact arrays between FFs. The number of MCUs is reduced from 110 to 1 by inserting well-contact arrays under power and ground rails.

A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops (NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop (FF) in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7µs and 3µs with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr,Ti)O3(PZT) thin films.

An optical flip-flop circuit with a single semiconductor optical amplifier (SOA) using two orthogonal polarization states is proposed. The optical set / reset input and output signals are at a single wavelength. The flip-flop circuit consists of an SOA, a polarization combiner, a polarization splitter, two directional couplers, and two phase shifters. No continuous light source is required to operate the circuit. In this paper, we theoretically analyze the operation performance. Polarization dependence in SOA is considered in the analysis at a single wavelength operation, and numerically simulated results are presented. We confirm that the flip-flop circuit with a feedback-loop length of 15~mm can be operated at switching time of around 3~ns by 1~ns set / reset pulses. The flip-flop performance is discussed from viewpoints of transient overshoot and contrast at the steady on-off states.

This paper addresses a high-level synthesis (HLS) using dual-edge-triggered flip-flops (DETFFs) as memory elements. In DETFF-based HLS, the duty cycle becomes a manageable resource to improve the timing performance. To utilize the duty cycle radically, a programmable duty cycle (PDC) mechanism is built into this HLS, and captured by a new HLS task named PDC scheduling. As a first step toward DETFF-based HLS with PDC, the execution time minimization problem is formulated for given results of operation scheduling. A linear program is presented to solve this problem in polynomial time. As a next step, simultaneous operation scheduling and PDC scheduling problem for the same objective is tackled. A mixed integer linear programming-based (MILP) approach is presented to solve this problem. The experimental results show that the MILP can reduce the execution time for several benchmarks.

This paper proposes a new double-edge-triggered implicitly level-converting flip-flop, suitable for a low-power and low-voltage design. The design employs a sense amplifier architecture to reduce the delay and power consumption. Experimentally, when implemented with a 130-nm, single-Vt and 0.84V VDD process, it achieves 64% power-delay product (PDP) improvement, and moreover, 78% PDP improvement when implemented with a mixed-Vt technology, as compared to that of the classic double-edge-triggered flip-flop design.

A mixed storage-type design using flip-flops and latches (FF/latch-based design) has advantages on such as area and power compared to single storage-type design (only flip-flops or latches). Considering FF/latch-based design at high-level synthesis is necessary, because resource binding process significantly affects the quality of resulting circuits. One of the fundamental aspects in FF/latch-based design is that different resource binding solutions could lead to the different numbers of latch-replacable registers. Therefore, as a first step, this paper addresses a datapath design problem in which resource binding and selecting storage-types of registers are simultaneously optimized for datapath area minimization (i.e., latch replacement maximization). An efficient algorithm based on the compatibility path decomposition and an integer linear programming-based exact approach are presented. Experiments confirm the effectiveness of the proposed approaches.

Nonvolatile flip-flop enables leakage power reduction in logic circuits and quick return from standby mode. However, it has limited write endurance, and its power consumption for writing is larger than that of conventional D flip-flop (DFF). For this reason, it is important to reduce the number of write operations. The write operations can be reduced by stopping the clock signal to synchronous flip-flops because write operations are executed only when the clock is applied to the flip-flops. In such clock gating, a method using Exclusive OR (XOR) of the current value and the new value as the control signal is well known. The XOR based method is effective, but there are several cases where the write operations can be reduced even if the current value and the new value are different. The paper proposes a method to detect such unnecessary write operations based on state transition analysis, and proposes a write control method to save power consumption of nonvolatile flip-flops. In the method, redundant bits are detected to reduce the number of write operations. If the next state and the outputs do not depend on some current bit, the bit is redundant and not necessary to write. The method is based on Binary Decision Diagram (BDD) calculation. We construct write control circuits to stop the clock signal by converting BDDs representing a set of states where write operations are unnecessary. Proposed method can be combined with the XOR based method and reduce the total write operations. We apply combined method to some benchmark circuits and estimate the power consumption with Synopsys NanoSim. On average, 15.0% power consumption can be reduced compared with only the XOR based method.

As technology scales to 45 nm and below, the reliability of VLSI declines due to small delay defects, which are hard to detect by functional clock frequency. To detect small delay defects, a method which measures the delay time of path in circuit under test (CUT) was proposed. However, because a large number of FFs exist in recent VLSI, the probability that the resistive defect occurs in the FFs is increased. A test method measuring path delay time including the transmission time of FFs is necessary. However, the path measured by the conventional on-chip path delay time measurement method does not include a part of a master latch. Thus, testing using the conventional measurement method cannot detect defects occurring on the part. This paper proposes an improved on-chip path delay time measurement method. Test coverage is improved by measuring the path delay time including transmission time of a master latch. The proposed method uses a duty-cycle-modified clock signal. Evaluation results show that, the proposed method improves test coverage 5.2511.28% with the same area overhead as the conventional method.

This paper presents a wide range in supply voltage, resolution, and sampling rate asynchronous successive approximation register (SAR) analog-to-digital converter (ADC). The proposed differential flip-flop in SAR logic and high efficiency wide range delay element extend the flexibility of speed and resolution tradeoff. The ADC fabricated in 40 nm CMOS process covers 4–10 bit resolution and 0.4–1 V power supply range. The ADC achieved 49.8 dB SNDR and the peak FoM of 3.4 fJ/conv. with 160 kS/sec at 0.4 V single power supply voltage. At 10 bit mode and 1 V operation, up to 10 MS/s, the FoM is below 10 fJ/conv. while keeping ENOB of 8.7 bit.

A novel hybrid latch based flip-flop scheme is introduced in this paper. A pulse generator is eliminated to simplify clock distribution and save power. It also achieves high speed by shortening the critical data path. In addition, it avoids output node glitches which exist in conventional hybrid latch based flip-flops. HSPICE simulation results revealed that the proposed PHLFF performs best among referenced schemes. It can reduce 47.5% power dissipation, 16.5% clock-to-output latency and 56.4% PDP, as compared to conventional HLFF.