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Tetsuya IIZUKA Meikan CHIN Toru NAKURA Kunihiro ASADA
This paper proposes a reference-clock-less quick-start-up CDR that resumes from a stand-by state only with a 4-bit preamble utilizing a phase generator with an embedded Time-to-Digital Converter (TDC). The phase generator detects 1-UI time interval by using its internal TDC and works as a self-tunable digitally-controlled delay line. Once the phase generator coarsely tunes the recovered clock period, then the residual time difference is finely tuned by a fine Digital-to-Time Converter (DTC). Since the tuning resolution of the fine DTC is matched by design with the time resolution of the TDC that is used as a phase detector, the fine tuning completes instantaneously. After the initial coarse and fine delay tuning, the feedback loop for frequency tracking is activated in order to improve Consecutive Identical Digits (CID) tolerance of the CDR. By applying the frequency tracking architecture, the proposed CDR achieves more than 100bits of CID tolerance. A prototype implemented in a 65nm bulk CMOS process operates at a 0.9-2.15Gbps continuous rate. It consumes 5.1-8.4mA in its active state and 42μA leakage current in its stand-by state from a 1.0V supply.
Akihito HIRAI Koji TSUTSUMI Hideyuki NAKAMIZO Eiji TANIGUCHI Kenichi TAJIMA Kazutomi MORI Masaomi TSURU Mitsuhiro SHIMOZAWA
In this paper, a high-frequency resolution Digital Frequency Discriminator (DFD) IC using a Time to Digital Converter (TDC) and an edge counter for Instantaneous Frequency Measurement (IFM) is proposed. In the proposed DFD, the TDC measures the time of the maximum periods of divided RF short pulse signals, and the edge counter counts the maximum number of periods of the signal. By measuring the multiple periods with the TDC and the edge counter, the proposed DFD improves the frequency resolution compared with that of the measuring one period because it is proportional to reciprocal of the measurement time of TDC. The DFD was fabricated using 0.18-um SiGe-BiCMOS. Frequency accuracy below 0.39MHz and frequency precision below 1.58 MHz-RMS were achieved during 50 ns detection time in 0.3 GHz to 5.5 GHz band with the temperature range from -40 to 85 degrees.
Anugerah FIRDAUZI Zule XU Masaya MIYAHARA Akira MATSUZAWA
This paper presents a high resolution mixed-domain Delta-Sigma (ΔΣ) time-to-digital converter (TDC) which utilizes a charge pump as time-to-voltage converter, a low resolution SAR ADC as quantizer, and a pair of delay-line digital-to-time converters to form a negative feedback. By never resetting the sampling capacitor of the charge-pump, an integrator is realized and first order noise shaping can be achieved. However, since the integrating capacitor is never cleared, this circuit is prone to charge-sharing issue during input sampling which can degrade TDC's performance. To deal with this issue, a compensation circuit consists of another pair of sampling capacitors and charge-pumps with doubled current is proposed. This TDC is designed and simulated in 65 nm CMOS technology and can operate at 200 MHz sampling frequency. For 2.5 MHz bandwidth, simulation shows that this TDC achieves 66.4 dB SNDR and 295 fsrms integrated noise for ±1 ns input range. The proposed TDC consumes 1.78 mW power that translates to FoM of 208 fJ/conv.
Hiroyuki YOTSUYANAGI Hiroyuki MAKIMOTO Takanobu NIMIYA Masaki HASHIZUME
This paper proposes a method for testing delay faults using a boundary scan circuit in which a time-to-digital converter (TDC) is embedded. The incoming transitions from the other cores or chips are captured at the boundary scan circuit. The TDC circuit is modified to set the initial value for a delay line through which the transition is propagated. The condition for measuring timing slacks of two or more paths is also investigated since the overlap of the signals may occur in the delay line of the TDC in our boundary scan circuit. An experimental IC with the TDC and boundary scan is fabricated and is measured to estimate the delay of some paths measured by the TDC embedded in boundary scan cells. The simulation results for a benchmark circuit with the boundary scan circuit are also shown for the case that timing slacks of multiple paths can be observed even if the signals overlap in the TDC.
Xin-Gang WANG Fei WANG Rui JIA Rui CHEN Tian ZHI Hai-Gang YANG
This paper proposes a coarse-fine Time-to-Digital Converter (TDC), based on a Ring-Tapped Delay Line (RTDL). The TDC achieves the picosecond's level timing resolution and microsecond's level dynamic range at low cost. The TDC is composed of two coarse time measurement blocks, a time residue generator, and a fine time measurement block. In the coarse blocks, RTDL is constructed by redesigning the conventional Tapped Delay Line (TDL) in a ring structure. A 12-bit counter is employed in one of the two coarse blocks to count the cycle times of the signal traveling in the RTDL. In this way, the input range is increased up to 20.3µs without use of an external reference clock. Besides, the setup time of soft-edged D-flip-flops (SDFFs) adopted in RTDL is set to zero. The adjustable time residue generator picks up the time residue of the coarse block and propagates the residue to the fine block. In the fine block, we use a Vernier Ring Oscillator (VRO) with MOS capacitors to achieve a scalable timing resolution of 11.8ps (1 LSB). Experimental results show that the measured characteristic curve has high-level linearity; the measured DNL and INL are within ± 0.6 LSB and ± 1.5 LSB, respectively. When stimulated by constant interval input, the standard deviation of the system is below 0.35 LSB. The dead time of the proposed TDC is less than 650ps. When operating at 5 MSPS at 3.3V power supply, the power consumption of the chip is 21.5mW. Owing to the use of RTDL and VRO structures, the chip core area is only 0.35mm × 0.28mm in a 0.35µm CMOS process.
Masao TAKAYAMA Shiro DOSHO Noriaki TAKEDA Masaya MIYAHARA Akira MATSUZAWA
In this paper, we describe a new method to deal with analog signal in time domain. The method converts voltage signal to time-interleaved phase modulation signal of clock edge. After being amplified by a new time amplifier (TA), phases of the signal are converted to digital codes by successive approximation time-to-digital converter (SA-TDC). The test chip includes 8 interleaved 4 bit SA-TDCs with short latency. The chip operates up to 4.4 GHz. The measured ENOB is 3.51 bit and FOM is 0.49 pJ/conv.
Tetsuya IIZUKA Satoshi MIURA Ryota YAMAMOTO Yutaka CHIBA Shunichi KUBO Kunihiro ASADA
This paper proposes a sub-ps resolution TDC utilizing a differential pulse-shrinking buffer ring. This scheme uses two differentially-operated pulse-shrinking inverters and the TDC resolution is finely controlled by the transistor size ratio between them. The proposed TDC realizes 9 bit, 580 fs resolution in a 0.18 µm CMOS technology with 0.04 mm2 area, and achieves DNL and INL of +0.8/-0.8LSB and +4.3/-4.0LSB, respectively, without linearity calibration. A power dissipation at 1.5 MS/s ranges from 10.8 to 12.6 mW depending on the input time intervals.
YoungHwa KIM AnSoo PARK Joon-Sung PARK YoungGun PU Hyung-Gu PARK HongJin KIM Kang-Yoon LEE
In this paper, we propose a two-step TDC with phase-interpolator and time amplifier to satisfy high resolution at 2.4 GHz input frequency by implementing delay time less than that of an inverter delay. The accuracy of phase-interpolator is improved for process variation using the resistor automatic-tuning circuit. The gain of time amplifier is improved using the delay time difference between two delay cells. It is implemented in a 0.13 µm CMOS process with a die area of 0.68 mm2. And the power consumption is 14.4 mW at a 1.2 V supply voltage. The resolution and input frequency of the TDC are 0.357 ps and 2.4 GHz, respectively.
Shingo MANDAI Tetsuya IIZUKA Toru NAKURA Makoto IKEDA Kunihiro ASADA
This paper proposes a time-to-digital converter (TDC) utilizing the cascaded time difference amplifier (TDA) and shows measurement results with 0.18 µm CMOS. The proposed TDC operates in two modes, a wide input range mode and a fine time resolution mode. We employ a non-linearity calibration technique based on a lookup table. The wide input range mode shows 10.2 ps time resolution over 1.3 ns input range with DNL and INL of +0.8/-0.7LSB and +0.8/-0.4LSB, respectively. The fine time resolution mode shows 1.0 ps time resolution over 60 ps input range with DNL and INL of +0.9/-0.9LSB and +0.8/-1.0LSB, respectively.
Akira FUJIMAKI Isao NAKANISHI Shigeyuki MIYAJIMA Kohei ARAI Yukio AKITA Takekazu ISHIDA
We propose a neutron diffractometer system based on MgB2 thin film detectors and an SFQ signal processor. Small dimensions of MgB2 thin film detectors and high processing capability of the single flux quantum (SFQ) circuits enable us to handle several thousand or more detectors in a cryocooler, leading to a very compact system. In addition, the system can provide many diffraction patterns for different kinetic energies simultaneously. Kinetic energy is determined for individual neutrons by means of the time-of-flight method by using SFQ time-to-digital converters (TDCs). Digital outputs of the TDCs are multiplexed in time domain and sent to room-temperature electronics with reduced number of cables. A dual-input SFQ signal processor including TDCs and a multiplexer has been successfully demonstrated with a time resolution of 20 ns and power consumption of 400 µW. These values show high feasibility of the neutron diffraction system proposed here.
Jae-seung LEE Jae-Yoon SIM Hong June PARK
A high-throughput on-chip monitoring circuit with a digital output is proposed for the variations of the NMOS and PMOS threshold voltages. A voltage-controlled delay line (VCDL) and a time-to-digital converter (TDC) are used to convert a small difference in analog voltage into a large difference in time delay. This circuit was applied to the transistors of W = 10 µm and L = 0.18 µm in a 1616 array matrix fabricated with a 0.18-µm process. The measurement of the threshold voltage shows that the maximum peak-to-peak intra-chip variation of NMOS and PMOS transistors are about 31.7 mV and 32.2 mV, respectively, for the temperature range from -25 to 75. The voltage resolutions of NMOS and PMOS transistors are measured to be 1.10 mV/bit and 3.53 mV/bit at 25, respectively. The 8-bit digital code is generated for the threshold voltage of a transistor in every 125 ns, which corresponds to the 8-MHz throughput.
Jaejun LEE Sungho LEE Yonghoon SONG Sangwook NAM
This paper presents a time amplifier design that improves time resolution using an inverter chain delay in SR latches. Compared with the conventional design, the proposed time amplifier has better characteristics such as higher gain, wide range, and small die size. It is implemented using 0.13 µm standard CMOS technology and the experimental results agree well with the theory.
In this paper, a time-to-digital converter in which the digital output is obtained without delay time is proposed. The circuit consists of a time-to-voltage converter, voltage-to-frequency converter, and counter. In the time-to-voltage converter, a capacitor is charged with a constant current during the input time interval. The change in the capacitor voltage is proportional to the input time and the capacitor voltage can be converted into a pulse signal with the voltage-to-frequency converter. The frequency of the pulse signal is directly proportional to the peak capacitor voltage and the pulse signals are counted to obtain the digital output. In the proposed circuit, the input time interval can be easily controlled and the resolution of the digital output can be improved by controlling the passive devices such as the capacitor and resistor.