Hang Liu Fei Wu
Keiji GOTO Toru KAWANO Ryohei NAKAMURA
Takahiro SASAKI Yukihiro KAMIYA
Xiang XIONG Wen LI Xiaohua TAN Yusheng HU
Anton WIDARTA
Hiroshi OKADA Mao FUKINAKA Yoshiki AKIRA
Shun-ichiro Ohmi
Tohgo HOSODA Kazuyuki SAITO
Shohei Matsuhara Kazuyuki Saito Tomoyuki Tajima Aditya Rakhmadi Yoshiki Watanabe Nobuyoshi Takeshita
Koji Abe Mikiya Kuzutani Satoki Furuya Jose A. Piedra-Lorenzana Takeshi Hizawa Yasuhiko Ishikawa
Yihan ZHU Takashi OHSAWA
Shengbao YU Fanze MENG Yihan SHEN Yuzhu HAO Haigen ZHOU
Ryo KUMAGAI Ryosuke SUGA Tomoki UWANO
Jun SONODA Kazusa NAKAMICHI
Kaiji Owaki Yusuke Kanda Hideaki Kimura
Takuya FUJIMOTO
Yuji Wada
Fuyuki Kihara Chihiro Matsui Ken Takeuchi
Keito YUASA Michihiro IDE Sena KATO Kenichi OKADA Atsushi SHIRANE
Tomoo Ushio Yuuki Wada Syo Yoshida
Futoshi KUROKI
Jun FURUTA Shotaro SUGITANI Ryuichi NAKAJIMA Takafumi ITO Kazutoshi KOBAYASHI
Yuya Ichikawa Ayumu Yamada Naoko Misawa Chihiro Matsui Ken Takeuchi
Ayumu Yamada Zhiyuan Huang Naoko Misawa Chihiro Matsui Ken Takeuchi
Yoshinori ITOTAGAWA Koma ATSUMI Hikaru SEBE Daisuke KANEMOTO Tetsuya HIROSE
Hikaru SEBE Daisuke KANEMOTO Tetsuya HIROSE
Zhibo CAO Pengfei HAN Hongming LYU
Takuya SAKAMOTO Itsuki IWATA Toshiki MINAMI Takuya MATSUMOTO
Koji YAMANAKA Kazuhiro IYOMASA Takumi SUGITANI Eigo KUWATA Shintaro SHINJO
Minoru MIZUTANI Takashi OHIRA
Katsumi KAWAI Naoki SHINOHARA Tomohiko MITANI
Baku TAKAHARA Tomohiko MITANI Naoki SHINOHARA
Akihiko ISHIWATA Yasumasa NAKA Masaya TAMURA
Atsushi Fukuda Hiroto Yamamoto Junya Matsudaira Sumire Aoki Yasunori Suzuki
Ting DING Jiandong ZHU Jing YANG Xingmeng JIANG Chengcheng LIU
Fan Liu Zhewang Ma Masataka Ohira Dongchun Qiao Guosheng Pu Masaru Ichikawa
Ludovico MINATI
Minoru Fujishima
Hyunuk AHN Akito IGUCHI Keita MORIMOTO Yasuhide TSUJI
Kensei ITAYA Ryosuke OZAKI Tsuneki YAMASAKI
Akira KAWAHARA Jun SHIBAYAMA Kazuhiro FUJITA Junji YAMAUCHI Hisamatsu NAKANO
Seiya Kishimoto Ryoya Ogino Kenta Arase Shinichiro Ohnuki
Yasuo OHTERA
Tomohiro Kumaki Akihiko Hirata Tubasa Saijo Yuma Kawamoto Tadao Nagatsuma Osamu Kagaya
Haonan CHEN Akito IGUCHI Yasuhide TSUJI
Keiji GOTO Toru KAWANO Munetoshi IWAKIRI Tsubasa KAWAKAMI Kazuki NAKAZAWA
Jian PANG Xueting LUO Zheng LI Atsushi SHIRANE Kenichi OKADA
This paper introduces a high-resolution and compact CMOS switch-type phase shifter (STPS) for the 5th generation mobile network (5G) n260 band. In this work, totally four coarse phase shifting stages and a high-resolution tuning stage are included. The coarse stages based on the bridged-T topology is capable of providing 202.5° phase coverage with a 22.5° tuning step. To further improve the phase shifting resolution, a compact fine-tuning stage covering 23° is also integrated with the coarse stages. Sub-degree phase shifting resolution is realized for supporting the fine beam-steering and high-accuracy phase calibration in the 5G new radio. Simplified phase control algorithm and suppressed insertion loss can also be maintained by the proposed fine-tuning stage. In the measurement, the achieved RMS gain errors at 39 GHz are 0.1 dB and 0.4 dB for the coarse stages and fine stage, respectively. The achieved RMS phase errors at 39 GHz are 3.1° for the coarse stages and 0.1° for the fine stage. Within 37 GHz to 40 GHz, the measured return loss within all phase-tuning states is always better than -14 dB. The proposed phase shifter consumes a core area of only 0.12mm2 with 65-nm CMOS process, which is area-efficient.
Nur Syafiera Azreen NORODIN Kousuke NAKAMURA Masashi HOTTA
To realize a stable and efficient wireless power transfer (WPT) system that can be used in any environment, it is necessary to inspect the influence of environmental interference along the power transmission path of the WPT system. In this paper, attempts have been made to reduce the influence of the medium with a dielectric and conductive loss on the WPT system using spiral resonators for resonator-coupled type wireless power transfer (RC-WPT) system. An important element of the RC-WPT system is the resonators because they improve resonant characteristics by changing the shape or combination of spiral resonators to confine the electric field that mainly causes electrical loss in the system as much as possible inside the resonator. We proposed a novel dual-spiral resonator as a candidate and compared the basic characteristics of the RC-WPT system with conventional single-spiral and dual-spiral resonators. The parametric values of the spiral resonators, such as the quality factors and the coupling coefficients between resonators with and without a lossy medium in the power transmission path, were examined. For the lossy mediums, pure water or tap water filled with acryl bases was used. The maximum transmission efficiency of the RC-WPT system was then observed by tuning the matching condition of the system. Following that, the transmission efficiency of the system with and without lossy medium was investigated. These inspections revealed that the performance of the RC-WPT system with the lossy medium using the modified shape spiral resonator, which is the dual-spiral resonator proposed in our laboratory, outperformed the system using the conventional single-spiral resonator.
Ibrahim ABDO Korkut Kaan TOKGOZ Atsushi SHIRANE Kenichi OKADA
This paper introduces several design techniques to improve the performance of CMOS frequency multipliers that operate at the sub-THz band without increasing the complexity and the power consumption of the circuit. The proposed techniques are applied to a device nonlinearity-based frequency tripler and to a push-push frequency doubler. By utilizing the fundamental and second harmonic feedback cancellation, the tripler achieves -2.9dBm output power with a simple single-ended circuit architecture reducing the required area and power consumption. The tripler operates at frequencies from 103GHz to 130GHz. The introduced modified push-push doubler provides 2.3dB conversion gain including the balun losses and it has good tolerance against balun mismatches. The output frequency of the doubler is from 118GHz to 124GHz. Both circuits were designed and fabricated using CMOS 65nm technology.