Dislocation-free thin silicon layers are created on the three kinds of substrates such as oxide film, synthetic quartz glass and sapphire. They are bonded with silicon wafers using hydrogen bonding at room temperature but without any adhesive, and their bonding are changed into covalent bonding at elevated temperature. Thick (2 µm) silicon layers are first produced by surface grinding and polishing, and then thinned to 0.1 µm by plasma assisted chemical etching (PACE). A multiple repeated process of thinning the silicon layer and annealing the bonded silicon/quartz and silicon/sapphire interface is applied for tight bonding between a silicon wafer and a quartz wafer, and a silicon wafer and a sapphire wafer which have different thermal expansion coefficients. In case of bonding with sapphire, oxide with 200 in thickness plays an important role in the preventions of void formation and diffusion of interface contaminants into the silicon layer.

A 0.25-µm BiCMOS technology has been developed using three sophisticated technologies; the HSST/BiCMOS device, synchrotron orbital radiation (SOR) X-ray lithography, and an advanced two-level metallization. The HSST/BiCMOS provides a 25.4-ps double-poly bipolar device using High-performance Super Self-Aligned Process Technology (HSST), and a 42 ps/2 V CMOS inverter. SOR lithography allows a 0.18 µm gate and 0.2 µm via-hole patternings by using single-level resists. The metallization process features a new planarization technique of the 0.3-µm first wire, and a selective CVD aluminum plug for a 0.25 µm via-hole with contact resistance lower than 1Ω. These 0.25-µm technologies are used to successfully fabricate a 4 KG 0.25 µm CMOS gate-array LSI on a BiCMOS test chip of 12 mm square, which operates at 58 ps/G at 2 V. This result demonstrates that SOR lithography will pave the way for the fabrication of sub-0.25-µm BiCMOS ULSIs.

Characterization of silicon devices incorporating the capacitor which uses ferroelectric thin films as capacitor dielectrics is presented. As cases in point, a DRAM cell capacitor and an analog/digital silicon IC using the thin film of barium strontium titanate (Ba1-xSRxTiO3) are examined. Production and characterization of the ferroelectric thin films are also described, focusing on a Metal Organic Deposition technique and liquid source CVD.

Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.

Water desorption from interlayer dielectric, spin-on-glass and SiO2 film deposited with tetraethylorthosilicate and O3, was controlled in order to reduce MOSFET hot-carrier degradation by using plasma SiO2 film as a water blocking layer. Two kinds of plasma SiO2 film were used in this study: SiH4 plasma SiO2 film deposited with SiH4 and N2O, and TEOS plasma SiO2 film deposited with TEOS and O2. Thermal desorption spectroscopy was used to study water desorption. Reduction of water desorption was obtained using plasma SiO2 film with water blocking ability; this reduction of water desorption resulted in suppression of the MOSFET hot-carrier degradation. The water blocking ability was obtained by low pressure deposition for SiH4 plasma SiO2 and low flow rate ratio of TEOS to O2 deposition for TEOS plasma SiO2. Water absorption studies of plasma SiO2 film using Fourier transform infrared spectroscopy revealed that water blocking ability is associated with small amount of water absorption both in SiH4 plasma SiO2 film and in TEOS plasma SiO2 film. Consequently, it is considered that the water blocking ability, as well as water absorption, of plasma SiO2 film depends on porosity.

The stability conditions and stability factors of terminated active two port networks are investigated. They are expressed with the S parameters of active devices and the radii and centers of the circles defined by source and load terminations. The stability conditions are applied to specific cases. Some of the results correspond to the stability conditions expressed in Z, Y, H or G parameters and one of the other stability conditions of terminated two port network is similar to that for passive terminations which is expressed in S parameters. The various results derived in this paper are very useful for checking the stability of amplifiers, because both stability conditions and stability factors are simply calculated by using the S parameters without using the graphical method or transforming S parameters to Z, Y, H or G parameters. These stability conditions can be also used even if negative input or output resistance appears and even if the real part of source or load immittance is negative.

An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.

The theoretical modelling bandgap narrowing and percentage of ionized impurity atoms for uncompensated uniformly doped silicon containing conventional impurities (B, P, As, Sb) under thermodynamic-equilibrium conditions is presented. As distinct from existing approaches, this modelling is valid for impurity concentrations up to electrically-active-impurity-concentration limits and for the temperature range from 40 K up to 400 K. A relevant and efficient calculation software is proposed. The results of the calculations are compared with the results extracted by many authors from measurement data. A good agreement between these results is noted and possible reasons of some discrepancies are pointed out. The present modelling and software can be used for investigation of BJT charge-neutral regions as well as diffused or implanted resistors.

The modular and growable photonic ATM switch architecture described in this paper uses both time-division and wavelength-division multiplexing technologies, so the switch capacity can be expanded in both the time and frequency domains. It uses a new implementation of output buffering scheme that overcomes the bottleneck in receiving and storing concurrent ultra fast optical cells. The capacity in one stage of a switch with this architecture can be increased from 32 gigabits per second to several terabits per second in a modular fashion. The proposed switch structure with output channel grouping can greatly reduce the amount of hardware and still guarantee the cell sequence.

This paper describes a new free-space optical switch structure based on cascaded beam shifters (each consists of a liquid-crystal polarization controller array and a birefringent plate). This structure comprises 2-input, 2-output switching elements that are locally connected by links. It is applicable to a variety of switching networks, such as a Clos network. The switching network based on this structure is an analog switch that is transparent to signal format, bit rate, and modulation type, so it can handle various types of optical signals. Theoretical feasibility studies indicate that compact large-scale switches (i.e., 100-1000 ports) with relay lens systems can be implemented using beam shifters with a 0.4-dB insertion loss and a 30-dB extinction ratio. Experimental feasibility studies indicate that a 1024-cell beam shifter module with a 0.5-dB insertion loss and a 23-dB extinction ratio is possible at present. An alignment-free assembly technique using precise alignment guides is also confirmed. An experimental 8-stage, 1024-input 256-output concentrator shows low insertion loss characteristics (6.8dB on average) owing to the low-loss beam shifters and the alignment-free assembly technique. Practical switching networks mainly require the improvement of the extinction ratio of the beam shifter module and the development of a fiber pig-tailing technique. This switch structure is applicable to transparent switching networks such as subscriber line concentrators and inter-module connectors.

A new mobility model dependent upon electron concentration is presented for studying the screening effect on ionized impurity scattering. By coupling this model with the drift-diffusion and Hartree models, the effects of self-consistent and quasi-equilibrium screening on carrier transport in heavily doped systems are revealed for first time. The transport mechanism is found to be dominated by the electron-concentration-dependent mobility, and transconductance is shown to be determined by effective mobility and changes from degraded to enhanced characteristics with electron concentration modulation.

In this paper, we present a new technique for the semantic analysis of sentences, including an ambiguity-packing method that generates a packed representation of individual syntactic and semantic structures. This representation is based on a dependency structure with constraints that must be satisfied in the syntax-semantics mapping phase. Complete syntax-semantics mapping is not performed until all ambiguities have been resolved, thus avoiding the combinatorial explosions that sometimes occur when unpacking locally packed ambiguities. A constraint satisfaction technique makes it possible to resolve ambiguities efficiently without unpacking. Disambiguation is the process of applying syntactic and semantic constraints to the possible candidate solutions (such as modifiees, cases, and wordsenses) and removing unsatisfactory condidates. Since several candidates often remain after applying constraints, another kind of knowledge to enable selection of the most plausible candidate solution is required. We call this new knowledge a preference. Both constraints and preferences must be applied to coordination for disambiguation. Either of them alone is insufficient for the purpose, and the interactions between them are important. We also present an algorithm for controlling the interaction between the constraints and the preferences in the disambiguation process. By allowing the preferences to control the application of the constraints, ambiguities can be efficiently resolved, thus avoiding combinatorial explosions.

The photonic Space-Division (SD) switching network is attractive for constructing flexible broadband networks. This paper first describes possible applications of the network. A broadband STM switching system, Digital Cross-connect System (DCS) and Video signal distribution switch, especially for HDTV signals, are attractive near term applications. Recent activities on photonic SD switching network developments aiming at these application are also reviewed. A 128 line prototype switching system has been developed. This system utilizes LiNbO3 photonic switch matrices, semiconductor traveling wave amplifiers (TWAs) and three dimensional optical interconnections for multi stage switching networks. It is confirmed that the system has been operating in providing 150Mb/s TV phone services and 600Mb/s HDTV distribution services with high stability. An experimental optical Digital Crossconnect System (optical DCS) has also been demonstrated. Line failure restoration operation at 2.4Gb/s has been successfully demonstrated. These experimental demonstrations prove that practical photonic switching systems are feasible with current technologies.

We studied the supply and removal of oil to and from a thin groove and the consequent insertion loss, aiming at matrix optical waveguide switches that utilize optical reflection and transmission effects at the groove. A robot precisely controlled the position of the removal nozzle and the supply needle by a vision servo. The optimum position for the removal nozzle was at the entrance of the groove to a circular oil pool, and the positioning margin was 10-15µm around the optimum position. The on-off ratio of the switching light power at the optimum position was about 30dB. The removal time was proportional to the kinetic viscosity of the oil, and the optimum height of the removal nozzle was independent of the kinetic viscosity of the oil. An analysis of the insertion loss revealed that the main factor in the loss at the reflection is the tilt of the groove wall.

Among various photonic switching technologies, photonic frequency division multiplexing technology is most promising. In this paper a novel photonic FDM (Frequency Division Multiplexing) system is proposed. The proposed system consists of n (multiplicity of frequencies) independent subnetworks, each of which is identified by a specific frequency, and of which each network topology is identical. When a connection is required by a terminal, the network selects a subnetwork that can afford it, and assigns a frequency representing the selected subnetwork to the terminal. This system eliminates frequency converting devices and traffic concentration equipment, which will reduce the size and cost of the system. A very small sized switching system of very large capacity will be easily realized. In this paper, first we will address the basic concept of the proposed system, and then discuss some technical problems and their solutions concerning network configuration, switch matrix structure, subscriber network configuration, control scheme and frequency multiplicity. Some experimental results are also mentioned.

This paper presents a new method for resolving lexical (word sense) ambiguities inherent in natural language sentences. The Sentence Analyzer (SENA) was developed to resolve such ambiguities by using constraints and example-based preferences. The ambiguities are packed into a single dependency structure, and grammatical and lexical constraints are applied to it in order to reduce the degree of ambiguity. The application of constraints is realized by a very effective constraint-satisfaction technique. Remaining ambiguities are resolved by the use of preferences calculated from an example-base, which is a set of fully parsed word-to-word dependencies acquired semi-automatically from on-line dictionaries.

The TACAN is located where there is no obstruction to its line-of-sight coverage. When it snows, its radome, particularly its windward side is covered with snow. This partial snow attaching on the radome causes azimuth error of the TACAN. In this paper, a simple computer simulation for estimation of the azimuth error caused by such snow attaching is proposed. Then we checked the simulation results against the test results of the azimuth error due to pseudo ice/snow layer and the results of measurements in the fields. Finally, we propose a spherical radome to alleviate this problem and its test results are presented. We think that this study is also applicable for radar antennas.

The consequences of energy transport related effects like velocity overshoot on the performance of bipolar transistors have already been studied previously. So far however most of the applied models were only 1D and it remained unclear whether such effects would have a significant influence on important quantities like ECL gate delay accessible only on the circuit level. To the authors' best knowledge in this paper for the first time the consequences of energy transport related effects on the circuit level are investigated in a rigorous manner by mixed level device/circuit simulation incorporating full 2D numerical hydrodynamic models on the device level.

A family of new generalized LR parsing algorithms are proposed which make use of a set of ancestors tables introduced by Kipps. As Kipps's algorithm does not give us a method to extract any parsing results, his algorithm is not considered as a practical parser but as a recognizer. In this paper, we will propose two methods to extract all parse trees from a set of ancestors tables in the top vertices of a graph-structured stack. For an input sentence of length n, while the time complexity of the Tomita parser can exceed O(n3) for some context-free grammars (CFGs), the time complexity of our parser is O(n3) for any CFGs, since our algorithm is based on the Kipps's recognizer. In order to extract a parse tree from a set of ancestors tables, it takes time in order n2. Some preliminary experimental results are given to show the efficiency of our parsers over Tomita parser.

Naturalness of expressions reflects various pragmatic factors in addition to grammatical factors. In this paper, we discuss relations between expressions and two pragmatic factors: a point fo view of speaker and a hierarchical relation among participants. Degree of empathy" and class" is used to express these pragmatic factors as one-dimensional notion. Then inequalities and equalities of them become conditions for selecting natural expressions. The authors of this paper formulate conditions as principles about lexical and syntactical constraints, and have implemented a sentence generation grammar using the unification grammar formalism.