A direct calculation method of efficiency and power of FETs from d.c. characteristics determined by knee and breakdown voltages is proposed to make clear the requirements for knee and breakdown voltages of FETs under low-voltage operation of power amplifiers. It is shown from the calculation that the breakdown voltage has a greater effect on power and efficiency than the knee voltage and has to be three or more times of the operating voltage in order not to degrade efficiency under class-AB operation. A 3.3 V UHF-band 3-stage high efficiency and high power monolithic amplifier has been developed with the use of power FETs satisfying the requirements for knee and breakdown voltages under low-voltage operation. A power-added efficiency of 57.3% and a saturated output power of 31.8 dBm have been achieved for a drain voltage of 3.3 V in UHF-band. The direct calculation method of efficiency and power from d.c. characteristics, which can provide the required knee or breakdown voltage for a given efficiency, power, or bias conditions, is considered to be useful for developing power devices with various requirements for efficiency, power, and bias conditions.

This paper describes 950 GHz power performance of double-doped AlGaAs/InGaAs/AlGaAs heterojunction field-effect transistors (HJFET) operated at a drain bias voltage ranging from 2.5 to 3.5 V. The developed 1.0 µm gatelength HJFET exhibited a maximum drain current (Imax) of 500 mA/mm, a transconductance (gm) of 300 mS/mm, and a gate-to-drain breakdown voltage of 11 V. Operated at 3.0 V, a 17.5 mm gate periphery HJFET showed 1.4 W Pout and -50.3 dBc adjacent channel leakage power at a 50 kHz off-carrier frequency from 950 MHz with 50% PAE. Harmonic balance simulations revealed that the flat gm characteristics of the HJFET with respect to gate bias voltage are effective to suppress intermodulation distortion under large signal operation. The developed HJFET has great potential for small-sized digital cellular power applications operated at a low DC supply voltage.

In this paper we propose a two-stage address coding scheme to transmit two data symbols at once within a frame in a MFSK/FH-CDMA system. We compare it with the conventional system using single-stage address coding. Assumed that the address codes of all users are known in the receiver. A multiuser detection scheme is applied and the performance is evaluated by computer simulations to show the improvement in bit error rate (BER) compairing to the conventional system. We also investigate the performance of error-correcting coding and decoding in the two-stage address coded MFSK/FH-CDMA system. An erasure decoding scheme is modified for the two-stage address coded system and is utilized to improve spectral efficiency or to increase user capacity in the MFSK/FH-CDMA system. Finally, we investigate a hybrid scheme of combining the multi-user detection scheme and the error-correcting decoding scheme for the two-stage address coded MFSK/FH-CDMA system. The performance is evaluated by computer simulations.

The stability of a high-resistivity load SRAM cell using thin-film SOI MOSFET's was investigated as compared with bulk-Si MOSFET's. In SOI MOSFET's back-gate-bias effect was suppressed by indirect application of back-gate-bias to the channel region through the thick buried oxide. The Vt shifts were reduced to be 10% and 14% of that in bulk-Si MOSFET's in partially and fully depleted devices, respectively. The reduction of back-gate-bias effect provides improvement of "high" output voltage and gain in the enhancement-enhancement (EE) inverter in a high-resistivity load SRAM cell, thereby offering improved cell stability. It was demonstrated by using partially depleted SOI SRAM cells that non-destructive reading was obtained even at a low drain voltage of 1.4 V without gate-potential boost, which was much smaller than the operation limit in a bulk Si SRAM with the same patterns and dimensions used as a reference. This implies that SOI devices can also offer low-voltage operation even in TFT-load cells used in up-to-date high-density SRAM's. These results suggest that thin-film SOI MOSFET's have a superior potential of low-voltage operation expected for further scaled devices and/or for portable systems in a forthcoming multimedia era.

Recenty, the Josephson effect-based voltage standard has been realized by using the Josephson junction array which is constructed by integrating many Josephson junctions. In this article, the 1-V Josephson-junction-array voltage standard used in routine calibration work and further development of the 10-V Josephson junction array at the Electrotechnical Laboratory (ETL) are introduced.

A bipolar low-voltage multiplier core is presented. The proposed low-voltage multiplier core is built from a bipolar quadritail cell. Voltages applied to the individual bases of the transistors in the bipolar quadritail cell are aVxbVy, (a1)Vx(b1)Vy ,aVx(b1)Vy, and (a1)VxbVy, where Vx and Vy are the input signals, and a and b are constants, for example, VxVy, O, Vx, and Vy. Simple input systems using resistive dividers are also described. The dc transfer characteristics were verified on a breadboard using transistor-arrays and discrete components. The dc transfer characteristic of the proposed multiplier core is very close to that of the Gilbert multiplier cell, but the proposed multiplier core is operable on low supply voltage. Therefore, a bipolar multiplier core using a quadritail cell is a low-voltage version of the Gilbert multiplier cell. The proposed bipolar multiplier is practically useful because it can be easily implemented in integrated circuits by utilizing a multiplier core and a resistor-only input system, and it also operates at very lowvoltage. Therefore, the proposed bipolar multipliers are very suitable for low-power operation.

This study shows that using the direct offset integration technique (DOIT) and additional positive feedback (APF) in a high-Tc dc superconducting quantum interference device (SQUID) improves the effective flux-to-voltage transfer function and reduces the flux noise of a magnetometer, thus improving the magnetic field noise. The effective flux-to-voltage transfer function and the flux noise with APF were measured at different values of the positive feedback parameter βa, which depends on the resistance of the APF circuit. These quantities were also compared between conditions with and without APF. This investigation showed that a βa condition the most suitable for minimizing the flux noise of a magnetometer with APF exists and that it is βa=0.77. The effective flux-to-voltage transfer function with APF is about three times what it is without APF (93 µV/Φ0 vs. 32 µV/Φ0). The magnetic field noise of a magnetometer with APF is improved by a factor of about 3 (242 fT/Hz vs. 738 fT/Hz).

We propose and fabricate n+-p+ double-gate SOI MOSFETs for which threshold voltage is controlled by interaction between the two gates. Devices have excellent short channel immunity, dispite a low channel doping concentration of 1015 cm-3, and enable us to design a threshold voltage below 0.3 V while maintaining an almost ideal subthreshold swing. We demonstrated 27 ps CMOS inverter delay with a gate length of 0.19 µm, which is, to our knowledge, the lowest delay for this gate length despite rather a thick 9 nm gate oxide. This high performance is a result of the low threshold voltage and negligible drain capacitance. We also showed theoretically that we can design a 0.1 µm gate length device with an ideal subthreshold swing, and that we can expect less than 10 ps inverter delay at a supply voltage of 1 V.

The state of the art of low-voltage (LV) analog circuit design techniques is reviewed, and fundamental design techniques are identified and classified as follows: 1) current-mode, 2) series-to-parallel, 3) signal range sharing, 4) dynamic bias, 5) linear bias, and 6) LV regulator. A relatively wide variety of low frequency application circuits have been developed, but future development is expected for wide-bandwidth application circuits such as a voltage-controlled-oscillator (VCO), a balanced multiplier, etc. The circuit techniques such as current-mode, signal range sharing, and dynamic bias will probably be most important for advanced future circuit designs.

This paper surveys low-power circuit techniques for CMOS ULSIs. For many years a power supply voltage of 5 V was employed. During this period power dissipation of CMOS ICs as a whole increased four-fold every three years. It is predicted that by the year 2000 the power dissipation of high-end ICs will exceed the practical limits of ceramic packages, even if the supply voltage can be feasibly reduced. CMOS ULSIs now face a power dissipation crisis. A new philosophy of circuit design is required. The power dissipation can be minimized by reducing: 1) supply voltage, 2) load capacitance, or 3) switching activity. Reducing the supply voltage brings a quadratic improvement in power dissipation. This simple solution, however, comes at a cost in processing speed. We investigate the proposed methods of compensating for the increased delay at low voltage. Reducing the load capacitance is the principal area of interest because it contributes to the improvement of both power dissipation and circuit speed. Pass-transistor logic is attracting attention as it requires fewer transistors and exhibits less stray capacitance than conventional CMOS static cicuits. Variations in its circuit topology as well as a logic synthesis method are presented and studied. A great deal of research effort has been directed towards studying every portion of LSI circuits. The research achievements are categorized in this paper by parameters associated with the source of CMOS power dissipation and power use in a chip.

A 10-kW (53V/200A), forced-air-cooled DC-DC converter has been developed for fuel cell systems. This converter uses new high-voltage bipolar-mode static induction transistors (BSIT), a new driving method, a zero-voltage-switched pulse-width-modulation technique, and a new litz wire with low AC resistance. It weighs only 16.5kg, has a volume of 26,000cm3, operates at 40kHz, and has a power conversion efficiency of about 95%. The power loss of this converter is 20% less than that of conventional natural-air-cooled DC-DC converters, and the power density is 3 times as high.

A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.

This paper discusses a CMOS differential-difference amplifier circuit suitable for low voltage operation. A new multiple weighted input transconductor circuit structure is suggested to be use in DDA implementation. The proposed DDA can be employed in several analog/digital systems to improve their parameters. Selected examples of the proposed transconductor/DDA applications are also discussed.

This paper presents 1V supply voltage Bi-CMOS current mode circuits. The circuits are consist of current mirrors, current comparators and current sources. The circuits have some advantages such as high accuracy, high speed, high density and low power supply. As an application of the circuits, an analog-to-digital converter (ADC) is given. The ADC operates with small chip area and low power dissipation. The performances of the proposed circuits were confirmed by using SPICE2 simulation.

In this letter, we propose a simple voltage controlled oscillator (VCO) with circuitry combining a Miller integrator and an RS flip-flop circuit. With the VCO, the control voltage can be varied over a broad range, and the oscillation frequency varies in proportion to the control voltage. The maximum voltage is up to 1000 times the minimum, and the calculated design values and measured values agree well. This VCO can be applied to FM modulators, FSK modulators, and other systems.

While Electro-Optic (E-O) sampling has achived the electric signal measurement with advantages of noninvasive, noncontact and ultrafast time resolution, it is unsuitable for measuring long logic patterns in fast ICs under the functional test conditions. To overcome this problem, a real time E-O probing using a continuous wave (CW) diode laser and a fast photodetector has been developed. By adopting a ZnTe E-O probe having a half-wave voltage of 3.6 kV, shot noise limited measurement with a frequency bandwidth of 480 MHz has been achieved using a low noise diode laser (wavelength of 780 nm, output power of 30 mW), a pin photodiode, a wideband low noise amplifier, and a digital oscilloscope having 500 MHz bandwidth as a waveform analyzer. The minimum detectable voltage was 23 mV under 700 times integration. In this paper, discussion of the voltage sensitivity of real time E-O probing is included. Key parameters for attaining the highly sensitive real time E-O probing are the sensitivity of the E-O probe and noises of the probing light and detection system.

A 3.2 GHz, 50 mW, 1 V, GaAs clock pulse generator (CG) based on a phase-locked loop (PLL) circuit has been designed for use as an on-chip clock generator in future high speed processor LSIs. 0.5 µm GaAs MESFET and DCFL circuit technologies have been used for the CG, which consists of 224 MESFETs. An "enhanced charge-up current" inverter has been specially designed for a low power and high speed voltage controlled oscillator (VCO). In this new inverter, a voltage controlled dMESFET is combined in parallel with the load dMESFET of a conventional DCFL inverter. This voltage controlled dMESFET produces an additional charge-up current resulting in the new VCO obtaining a much higher oscillation frequency than that of a ring oscillator produced with a conventional inverter. With a single 1 V power supply (Vdd), SPICE calculation results showed that the VCO tuning range was 2.25 GHz to 3.65 GHz and that the average VCO gain was approximately 1.4 GHz/V in the range of a control voltage (Vc) from 0 to 1 V. Simulation also indicated that at a Vdd of 1 V the CG locked on a 50 MHz external clock and generated a 3.2 GHz internal clock (=50 MHz64). The jitter and power dissipation of the CG at 3.2 GHz oscillation and a Vdd of 1 V were less than 8.75 psec and 50 mW, respectively. The typical lock range was 2.90 GHz to 3.59 GHz which corresponded to a pull-in range of 45.3 MHz to 56.2 MHz.

The double-stage threshold-type foreground-background congestion control for the common-store queueing system with multiple nonpreemptive priority classes is proposed to improve the transient performance, where the numbers of accepted priority packets in both foreground and background stores are controlled under the double-stage threshold-type scheduling. In the double-stage threshold-type congestion control, the background store is used for any priority packets, and some parts of the background store are reserved for lower-priority packets to accommodate more lower-priority packets in the background store, whereas some parts of the foreground store are reserved for higher-priority packets to avoid the priority deadlock. First, we derive the general set of coupled differential equations describing the system-state, and the expressions for mean system occupancy, throughput and loss probability. Second, the transient behavior of system performance is evaluated from the time-dependent state probabilities by using the Runge-Kutta procedure. It is shown that when the particular traffic class becomes overloaded, high throughputs and low loss probabilities of other priority classes can be obtained.

This paper describes the circuit design and experimental results of a video-rate 10-b analog-to-digital converter (ADC) suitable for consumer video products, such as high-definition TV sets. Triple-stage conversion scheme combined with two new conversion methods, "Dynamic Sliding Reference Method" and "Triangular Interpolation Method," and an internal Bi-CMOS Sample/Hold circuit have been developed. These conversion methods require no adjustment circuit to fit reference voltages between conversion stages and realize small active area. As a result, a maximum conversion frequency of 16 MHz, acceptable SNRs of 56 dB and 48 dB for 10 kHz and 8 MHz input frequency respectively and small DNLE of 0.75 LSB have been achieved. This ADC is fabricated with 1.2 µm Bi-CMOS technology and integrates very small number of bipolar transistors of 2 K on a small active area of 2.52.7 mm2 and consumes 350 mW.

Throughout the paper, the nearest-neighbour (NN) interconnection of switches within a multistage interconnection network (MIN) is analysed. Three main results are obtained: (1) The switch preserving transformation of a 2-D MIN into the 1-D MIN (and vice versa) (2) The rearrangeability of the MIN and (3) The number of stages (NS) for the rearrangeable nonblocking interconnection. The analysis is extended to any dimension of the interconnected data set. The topological equivalence between 1-D MINs with NN interconnections (NN-MINs) and 1-D cellular arrays is shown.