A wireless tag system has been designed and developed for maintaining and managing outdoor communication facilities. This system employs an infrared (IR) beam and an electromagnetic wave with a radio frequency (RF), and is constructed using IR-RF tags, an IR commander, and an RF receiver. The IR command radiation with strong directivity enables a maintenance operator to recognize a target facility, and the RF response without directivity enables a management system to obtain data from within a large circular area. Solar and secondary batteries are also adopted as the power module in the tag to allow easy maintenance at long intervals. IR signal communication is possible up to a distance of 9 m, and RF signal communication is possible within a circle with a radius of 9 m.

This paper describes an analytic method, experimental results and simulation results for self-heating in a SOI (Silicon On Insulator) high voltage MOS transistor. The new analytic method enabled the temperature-rise caused by self-heating to be measured precisely. The temperature-rise in an operating transistor was evaluated by measuring the change of the source current against the source current without the self-heating. In advance, the relation between the temperature-rise and the current change had been prepared by measuring the current decrease when the hot-chuck temperature had been changed in iso-thermal condition. By using this method, the dependence of the temperature-rise or the current decrease on the operating condition or the thermal resistance were clarified. Furthermore, these measurement results and the thermal resistance which is calculated by a FEM analysis enabled a fully coupled electrothermal device simulation to be analyzed more precisely. The dependence of the current decrease on the buried oxide thickness were also calculated.

A high-speed silicon-on-insulator (SOI) of a 1/8 frequency divider and a 64-bit adder were realized using an optimized gate-overlapped LDD and a self-aligned titanium silicide (TiSi2) source-drain structure. The advantages of the delay time and power consumption were analyzed by circuit simulation. The maximum operation frequency of the SOI divider is 2.9 GHz at 3.3 V. The SOI divider operates about 1.6 times faster than the bulk-Si divider. The power consumption of the SOI divider at the maximum operating frequency is about 60% of that of the bulk divider. On the other hand, the speed of the SOI adder is 1.9 nsec at 3.3 V. The SOI adder speed is about 1.3 times faster than the bulk adder. The power consumption of the SOI adder is about 80% of that of the bulk divider. It was found that the high speed, low power features of the SOI divider were due to the pass transistor which had low junction capacitance and little substrate bias effects, in addition to the low wiring capacitance and low fanout capacitance compared to the bulk adder. As a result, it is suggested that SOI circuits using pass transistor have a potential for GHz level systems and it is expected they will be applied to handy communication systems and portable computers used in the multimedia era.

An ultra low voltage CMOS pass-gate logic using body-bias controlled SOI MOSFETs has been developed. The logic is composed of gate-body connected SOI pass-gates and a CMOS buffer with the body-bias controlled by the complementary double-rail input. The full-adder using the proposed logic improved the lowest operation voltage by 27%, compared with the SOI CPL (Complementary Pass-Gate Logic). For a 16 16 bit multiplier, the power-delay product achieved 70 pJ (including 50 pF I/O) at 0.5 V power supply, which was more than 1 order of magnitude improvement over the bulk CPL.

For low-voltage, high-speed operation of LSIs, the most attractive features in fully-depleted (FD) SOI devices are their steep subthreshold slope and reduced drain junction capacitance. This paper discusses the impact of these features on circuit performance. FD SOI devices can have a threshold voltage of more than 100 mV lower than that of bulk devices within the limits of acceptable off-state leakage current. Thus they hold higher driving current even at supply voltages of less than 1 V. On the other hand, the reduced junction capacitance is effective to suppress the total parasitic capacitance especially in lightly loaded CMOS circuits. These attractive features improve the speed performance in FD SOI circuits remarkably at supply voltages of less than 1 V. For high-speed circuit applications, 0.25-µm-gate SIMOX circuits, such as frequency dividers, prescalers, MUX, and DEMUX, can operate at up to 1-2 GHz even at a supply voltage of 1 V. CMOS/SIMOX logic LSIs also exhibit better performance at very low supply voltages. At merely 1 V, a SIMOX logic LSI could be functional at up to 60-90 MHz using 0.26-0.34 µW/MHz/Gate of power dissipation. Furthermore, SIMOX logic LSIs will allow 20-30 MHz operation at 0.5 V of a solar cell with reasonable chip size. These investigations lead to the conclusion that FD CMOS/SIMOX technology will have a large impact on the development of low-voltage high-performance LSIs for portable digital equipment and telecommunication systems.

We have designed a new current-mode low-voltage, low-power, high-frequency CMOS VCO circuit. The main purpose of this new circuit is to obtain operational capabilities with more than 1 GHz oscillation frequency from one battery cell. The current-mode approach was adopted throughout the circuit design to achieve this. New differential-type delay cells in the current-mode operation enable extremely low supply voltage operation and superior linearity between the oscillation frequency and control voltage of a ring oscillator. A design which combines the transitions of each delay cell output enables the VCO's high-frequency operation. To obtain a sufficient current level at output, a current amplifier with a small amount of positive feedback is used. The unnecessary generation of spectral components caused by mismatched time delay of delay cells in a ring-oscillator, which is an inherent problem of the VCO in a ring-oscillator form, is 0also analyzed. The characteristics of the designed VCO were examined by the SPICE circuit simulation using standard CMOS 0.6µm devices. Operation with a 1 V power supply, 1 GHz oscillation frequency, and 5.7 mW power dissipation was verified.

BiCMOS circuits using a base-boost technique for low-voltage application have been proposed. These circuits can operate at supply voltages down to 1.5 V. Their power dissipation, however, is 1.5-2 times of that of the CMOS circuit. We propose a novel BiCMOS circuit dissipating less power than that of conventional circuits. A base-boost technique is a key to low-voltage operation, and a gate holding the output voltage and a depletion nMOS pre-charge transistor are also introduced to reduce the power dissipation. Results of simulations using 0.3µm BiCMOS device parameters show that base-boosted BiNMOS (BB-BiNMOS) circuit is 1.5 times faster than CMOS circuit even at 1 V and that its power dissipation is almost the same power as that of a CMOS circuit, the base-boosted BiCMOS (BB-BiCMOS) circuit is twice as fast and dissipates only 1.2 times as much power. The energy-delay product of the BB-BiCMOS circuit is smaller than that of conventional BiCMOS circuits and is about half of that of a CMOS circuit, the BB-BiCMOS circuit is thus the most promising high-speed circuits for low-voltage and low-power applications.

We describe low supply voltage analog circuit techniques for voice- and audio-band interfaces. These techniques can lower the supply voltage to 1 V, which is the voltage of a one-NiCd-cell battery. We have applied them in a swingsuppression noise-shaping method, and using this method, have fabricated A/D and D/A converters for the voice and audio bands. These converters operate with a 1 V power supply and have 13-bit and 17-bit accuracy in the audio-band and power consumption of about 1 mW. This performance proves that our techniques are sufficient for baseband analog interfaces.

This paper describes an N-type and a P-type MOS cascode circuit based on the square-law characteristics of an MOS transistor in saturation region. The transconductance parameter ratios of an upper and a lower MOS transistor are set to be 1: n2 for the N-type MOS cascode circuit and n2: 1 for the P-type MOS cascode circuit. The N and P-type MOS cascode circuits are divided to four types by the difference of connections of input terminals. We consider the input-output relations of each type circuit. The second-order effects of the circuit such as channel length modulation effect, mobility reduction effect and device mismatch are analyzed. As applications, an analog voltage adder and a VT level shifter using MOS cascode circuits are presented. All of the proposed circuits are very simple and consist of only the N and P-type MOS cascode circuits. The proposed circuits aer confirmed by SPICE simulation with MOSIS 1.2µm CMOS process parameters.

Very-low-voltage 1.2-V mixed-signal CMOS technology is a device/circuit solution aimed at ultra-low-power portable systems such as digital cellular terminals and PDAs. We have developed an experimental 1.2-V mixed analog and digital LSI circuit/device technology. This technology is based on a new transistor structure that has a 0.3-µm gate length and a low Vth of 0.4 V, and that suppresses the short-channel effect. In this paper, we will mainly discuss low-voltage analog circuit design that uses this technology. We show that low Vth is essential not only to digital circuits, but also to 1.2-V analog amplifier, A/D converter and analog switch designs. To achieve high-conversion rate A/D converters, a pipeline architecture is used for low-voltage operation. To increase the attainable gain-bandwidth of the operational amplifier of the converter, a feedforward phase-compensated three-stage amplifier is proposed. The addition of a feedforward capacitor allows a high frequency signal to pass directly to the second stage, which optimizes use of the second stage bandwidth. Pole-zero canceling is used to achieve a fast settling of the amplifier. Although gain precision is degraded by the positive feedback through the feedforward capacitor, this can be offset by increasing the equivalent second-stage gain with an inner feedforward compensated amplifier. The gain-bandwidth of the proposed double feedforward amplifier is two to three times wider than with the conventional Miller compensation. With these techniques, we used 1.2-V mixed-signal CMOS technology to create a basic logic gate with a 400-ps delay and 0.4-µW/MHz power, and a 9-bit 2-Msample/s pipeline A/D converter with power dissipation of only 4 mW.

A new GaAs negative voltage generator suitable for biasing a GaAs MESFET power amplifier has been successfully developed and applied to a 1.9-GHz single-chip transmit/receive (T/R)-MMIC front-end including a power amplifier, a T/R-switch, and so on. To meet various requirements necessary for integration with a power amplifier, four new circuit techniques are introduced into this generator: (1)complementary charge pump operation to suppress spurious outputs. (2)an SCFL-to-DCFL cross-coupled level shifter to ensure a wide operation voltage range, (3)a level control circuit to reduce output voltage deviation caused by output current, and (4)interface and layout designs to achieve sufficient isolation between the power amplifier and the generator. The generator was incorporated into the MMIC front-end, and it was tested with a 30-lead shrink small outline package. With 20-to-500-MHz external input signals of more than -15 dBm, the generator produces negative voltages from -1.0 to -2.6 V for a wide range of suppiy voltages from 1.6 to 4.5 V. The current consumption is as low as 3.2 mA at 3 V. When a 22-dBm output is delivered through the power amplifier biased by the generator, low spurious outputs below -70 dBc are achieved. and gate-bias voltage deviations are suppressed to within 0.06 V even when a gate current of -140 µA flows through the amplifier. The generator also enables high speed operation of charge time below 200 ns, which is effective in TDMA systems such as digital cordless telephone systems. In layout design, electromagnetic simulation was utilized for estimating sufficient isolation between circuits in the MMIC. This negative voltage generator and its application techniques will enable GaAs high-density integration devices as well as single voltage operation of a GaAs MESFET power amplifier.

This paper proposes a small 1/4Vcc bit-line swing scheme and a related sense amplifier scheme for low power 1 V operating DRAM. Using the proposed small bit-line swing scheme, the stress bias of memory cell transistor and capacitor is reduced to half that of the conventional DRAM, resulting in improvement of device reliability. The proposed sense amplifier scheme achieves high speed and stable sensing/restoring operation at 250mV bit-line swing, which is much smaller than threshold voltage. The proposed scheme reduces the total power dissipation of bit-line sensing/restoring operation to 40% of the conventional one. This paper also proposes a small 4F2 size memory cell and a new twisted bit-line scheme. The array noise is reduced to 8.6% of the conventional DRAM.

A design methodology of high performance deep submicron CMOS in very low voltage operation has been proposed from low power dissipation point of view. In low voltage operation, threshold voltage is restricted by performance, stability of CMOS circuits and power dissipation caused by standby and switching transient current. As a result, threshold voltage is established to be 0.15 V even at 1 V operation from these requirements. Moreover, according to this design, 0.15 µm CMOS was fabricated with reduction of parasitic effects. It achieved propagation delay time 50 psec at 1 V operation. This results confirms that this design methodology is promising to achieve high performance deep submicron CMOS devices for low power dissipation.

For high frequency video signals, display monitors for personal computers are required to shift from the horizontal scanning frequency fH=15.75 kHz for conventional TV broadcasting to fH=64 to 80 kHz, which is called XGA. Shifting to high frequencies and restrictions on the withstand voltage of horizontal transistors decrease the inductance of deflection yokes, which is an obstacle in manufacturing deflection yokes. A study was undertaken on an operation to permit deflection/high voltage integrated operation while keeping the inductance of the deflection yoke high. This paper reports the results.

Most of the existing analytical models for multistage ATM switching fabric are not accurate in the presence of a non-uniform traffic at the input of the switch. In this paper, we discuss the issues in modeling a multistage ATM switching fabric, and investigate the effect of independence assumptions in two previous analytical models. A highly accurate 4-state Markov chain model for evaluating the performance of ATM switching fabrics based on multistage switches with 22 finite output-buffered SEs is proposed. The proposed model correctly reflects the correlation of cell movements between two subsequent cycles and states of the buffers of two adjacent stages. By comparing the results obtained from the oroposed model, existing models and simulations, it has been shown that the proposed model is much more accurate than existing models in the presence of a non-uniform traffic in the switch. The results from the existing models are unsatisfactory in the presence of an increased blocking in the switch arising from a non-uniform traffic in the switch. On the contrary, the proposed model is very robust even under severe blocking in the switch.

Nonuniform traffic can degrade the overall performance of multistage interconnection networks substantially. In this paper, this performance degradation is traced back to blocking effects that are not present under uniform traffic patterns within a network. This blocking phenomenon is not mentioned in the literature and is termed higher order Head-of-Line-blocking (HOLk-blocking) in this paper. Methods to determine the HOL-blocking order of multistage networks in order to classify the networks are presented. The performance of networks under hot-spot traffic as a function of their HOL-blocking characteristics is studied by simulation. It is shown that network bandwidth and packet delay improve under nonuniform traffics with increasing HOL-blocking order of a network.

The principles and design of current sense amplifiers for low-voltage MOS memories are described. The low input impedance of current sense amplifiers is explained using a simple model consisting of negative and positive resistance. A description of the model realized by a common-gate MOS amplifier employing transconductance enhancing techniques is also given. Some current sensing schemes for low-voltage ROM's and/or SRAM's are shown. For SRAM application, a current sensing scheme employing large-gain inverter-type amplifiers is proposed. A test chip including SRAM macrocells was designed and fabricated with 3.3-V 0.5-µm CMOS technology. An SRAM using current sense amplifiers was able to demonstrate that current sensing suppressed bitline delay to half that in conventional current-mirror types. The current sense amplifier had the same operating limit as the current-mirror type for low supply voltages. The measured operating limit of the STSM in this work was 1.3-V for threshold voltages of 0.55-V(n-channel) and -0.65-V(p-channel).

Multistage Interconnection Networks (MIN) with multiple outlets are networks which can support higher bandwidth than those of nonblocking networks by passing multiple packets to the same destination. Fault recovery mechanisms are proposed for two of such networks (TBSF/PBSF) with the best use of their inherent fault tolerant capability. With these mechanisms, on-the-fly fault recovery is possible for multiple faults on switching elements. For the link fault, the networks are reconfigured after fault diagnosis, and the network is available with some performance degradation. The bandwidth degradation under multiple faults on link/element is analyzed with both theoretical models and simulation. Through the analysis, F-PBSF shows high fault tolerance under high traffic load and low reliability by using 3 or more banyan networks.

This paper proposes new algorithms for diagnosing (detection, identification and location) baseline multistage interconnection networks (MIN) as one of the basic units in a massively parallel system. This is accomplished in the presence of single and multiple faults under a new fault model. This model referred to as the geometric fault model, considers defective crossing connections which are located between adjacent stages, internally to the MIN (therefore, a fault corresponds to a physical bridge fault between two connections). It is shown that this type of fault affects the correct geometry of the network, thus requiring a different testing approach than previous methods. Initially, an algorithm which detects the presence of bridge faults (both in the single and multiple fault cases), is presented. For a single bridge fault, the proposed algorithm locates the fault except in an unique pathological case under which it is logically impossible to differentiate between two equivalent locations of the fault (however, the switching element affected by this fault is uniquely located). The proposed algorithm requires log2 N test vectors to diagnose the MIN as fault free (where N is the number of input lines to the MIN). For fully diagnosing a single bridge fault, this algorithm requires at most 2 log2 N tests and terminates when multiple bridge faults are detected. Subsequently, an algorithm which locates all bridge faults is given. The number of required test vectors is O(N). Fault location of each bridge fault is accomplished in terms of the two lines in the bridge and the numbers of the stages between which it occurs. Illustrative examples are given.

A 2V/120 ns flash EEPROM embedded in a microcontroller has been fabricated in 0.8 µm double-metal CMOS process technology with a simple stacked gate memory cell. To achieve low voltage and high speed operation, novel circuit technology and architecture; (a) PMOS-precharging NMOS-self-boost word line circuit with a higher voltage selector, (b) new erase algorithm for reverse operation, (c) column gate boost circuit, (d) hard-verify mode for replacing weak cells, (e) efficient redundancy of row and column lines, have been developed. A 512 kb flash EEPROM core chip incorporating these circuit techniques and architecture operate at 1.8 V and accesses data in 120 ns at 2 V and 70.