A pass-transistor logic is enhanced with a bootstrap configuration for sub-1 V operation at high speed and low power. The bootstrap configuration drives the output to full swing, which accelerates the signal transition and cuts off the short-circuit current of subsequent CMOS logic gates. The asynchronous or synchronous timing sequence of the input (drain) and the control (gate) signals ensures bootstrap operation. A 1-b arithmetic logic unit (ALU) and an EXNOR gate built with the bootstrap pass-transistor logic outperforms those built with other types of pass-transistor logic. An experimental 16-b pass-transistor adder operates down to 0.4 V with a delay time of 4.2 ns and a power dissipation of 2.8 µ W/MHz at 0.5 V.

A new analysis method for random dopant induced threshold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate Vt fluctuations due to statistical variation of pocket dopant profile in 0.1µm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.

We propose an effective dopant pile-up model which is useful for device optimization in a short-term. Our purpose is that the model provides speedy calculation for numerous simulations constructed by design of experiment (DoE), and the calibration is also easy in practical range of process condition. The dopant pile-up in the Si/SiO2 interface is calculated using a non-pair diffusion model that solves one equation for each impurity, considering an essential physics where RSCE is due to the dopant pile-up in the Si/SiO2 interface. A non-pair diffusion for dopants and point defects is adequate for time length which can ignore their reactions. The key for the modeling of RSCE is that the dependence on various processes such as channel implantation and annealing conditions can be reproduced in the local process window. The capability of the model is investigated though the comparison to measurements in actual n-channel MOSFETs for different process technologies. We also check the prediction accuracy of the dopant profiles using our model. As a result, the optimization of 4 parameters for 25 jobs based on DoE is possible less than 2 hours using our model.

In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOSFET (FG-MOSFET) is proposed. First, the grounded VCLVR realization is discussed. The proposed circuit consists of only an ordinary MOSFET and an FG-MOSFET. The advantages of the proposed VCLVR are low-power and wide-input range and also the power consumption of the proposed VCLVR is the same as an ordinary passive resistor. The performance of the proposed circuits are confirmed by HSPICE simulations with a standard 0.6 µm CMOS process parameters. Simulations of the proposed VCLVR demonstrate a resistance value of 40 kΩ to 338 kΩ and an input range of 4.34 V within THD of less than 1.1%. Next, we proposed a new floating node linear variable resistor using the proposed VCLVR. The performance of the circuit is also evaluated through HSPICE.

This paper describes a low-power-supply 2-GHz CMOS up-converter. A current-mode mixing method using current adding and self-switching mixers is proposed for 1-V operation. The current-mode up-converter achieves conversion gain of 6.7 dB and linearity of 6.5-dBm OIP3 at 1 V. Balanced configuration and DC offset canceller reduce LO leakage below -40 dBc even with 20-mV Vth mismatches. The bias circuit of the IC is designed to maintain constant conversion gain for variation of temperature for practical usage. The measurement results indicate the proposed up-converter is applicable for future wireless systems.

This paper presents a 0.5Vdd-step pumping method for Dickson-type charge-pump circuits that achieve high overall efficiency, including regulator circuitry, even at large output currents, and these circuits are targeted at mobile equipment applications. We have designed positive and negative charge-pump circuits which use a 0.5Vdd-step pumping method, are implemented with advanced control functions, and are fabricated with our custom CMOS process. Measured results showed that efficiency of a 2.5-stage positive charge-pump circuit before regulation is more than 93% (power supply Vdd=5 V, output voltage Vout=16.9 V 3.5Vdd, output current Iout=4 mA), and that of a 1.5-stage negative charge-pump circuit is 93% (power supply Vdd=5 V, output voltage Vout=-7.2 V -1.5Vdd, output current Iout=4 mA).

A very low-power, high-speed flash A/D converter front-end composed of a new latched comparator was developed. We established a butterfly sorting technique to guarantee the monotonicity of the converter. The 6-bit A/D front-end achieves a speed of 100 Msps and dynamic range of 33 dB with power consumption of only 7 mW at the supply voltage of 1 V, and the butterfly sorter guarantees 6-bit monotonicity with an extra power consumption of 1 mW.

In this paper, is shown an approach to realize leapfrog structures obtained from proto-type passive RLC ladder filters using current differencing buffered amplifiers (CDBA) as active elements. The use of the CDBA's provides advantages that the realization procedure is simplified and the number of active components required is reduced. The approach is quite suitable for the realization of band-pass ladder filters, which generally requires a complicated structure to simulate LC series and/or parallel resonant branches by the conventional opamp-based leapfrog filters. A simple circuit configuration of the CDBA suitable for high frequency and low power supply voltage applications is also presented. As design examples, a fifth-order Butterworth lowpass ladder filter and a sixth-order Chebyshev bandpass ladder filter are designed. The effectiveness and the correctness of the proposed approach and the characteristics of the proposed filters are verified and examined through computer simulation.

The square-law characteristics of MOSFET in the saturation region have a parameter of threshold voltage VT. However, it introduces some complexities to the circuit design since it depends on kinds of MOS technology and cannot be controlled easily. In this paper, we show an equivalent MOSFET cell which has VT-programming capability and some application instances based on it. The simulation is carried out using CMOS 0.8 µm n-well technology and the results have shown the feasibility of the proposed structure.

A three inputs and single output voltage-mode universal biquadratic filter using only two operational transconductance amplifiers (OTAs) and two capacitors is presented. The new circuits offer several advantages, such as employing the minimum number of active and passive components (two OTAs and two capacitors), the versatility to synthesize highpass, bandpass, lowpass, notch and allpass responses without component matching conditions, high input impedance for bandpass and lowpass filter realizations and good sensitivities performance.

A mapping circuit in order to have a wider input dynamic range is proposed. MOSFET's connecting between power supply lines are employed to construct the mapping circuit. SPICE simulation is shown to evaluate the proposed circuits. With the proposed mapping circuit, two-MOSFET subtractor has a rail-to-rail input voltage. As an application, an OTA consisting of subtractors is realized by employing the proposed mapping circuits to have a rail-to-rail input voltage range.

In this paper, we propose a floating resistor circuit with positive and negative resistance operating at the low supply voltages 1.5 V. Only two transistors are connected between supply lines in order to operate under the low power supply voltages. In this circuit, current subtraction is carried out at the gate terminal for which input/output voltage is applied. As a result, the proposed circuit can realize the large range of resistance of positive and negative resistances. Therefore, in an application, the proposed circuit is used in neuro-based limit cycle generator as synaptic weights.

We introduce a PLL (Phase Locked Loop) for low-power and a low supply voltage applications. Because the PLL is a key device of the system LSIs used in mobile terminals, it is very important that PLLs operate under a low supply voltage to reduce power consumption. We investigate the limitations of the conventional VCO that we proposed in Ref.[5] and propose a modified VCO that uses common load transistors. Furthermore, we propose a charge pump that uses a dynamic output stage op-amp and a stability technique for the CMOS process, and it does not contain any special resistors. The results of an evaluation of a device fabricated using a standard logic 0.18-µm CMOS process demonstrated that the proposed PLL operated above 1.0 GHz with a 1.2-V supply voltage and it produced only a small amount of jitter that was lower than 78 psp-p.

In this paper, the closed-form expressions of signal-to-interference-plus-noise ratio (SINR) and the outage probability are derived for a maximal ratio combining (MRC) two-dimensional (2-D)-RAKE receiver with imperfect power control in a frequency-selective Nakagami fading channel. The impact of power control error (PCE) on the performance of the receiver is analyzed for all kinds of fading environments. The results of numerical derivation and simulation indicate that the performance of 2-D-RAKE receivers degrades due to imperfect power control. But when PCE is not serious, increasing the number of antennae and temporal diversity order can compensate for the performance loss. The exact performance improvement due to space-time processing varies with the PCE and the fading environment.

We have designed a 44 Banyan switch using SFQ logic circuits. The switch is composed of three parts; one is an input buffer, the second is a contention solver which checks packet contention in a distribution network, and the third is a packet distribution network which distributes contention-free packets to their destination address. The packet distribution network is composed of Batcher-Banyan switch with the input buffer. The contention solver decides to send a data packet to the distribution network, using only internal routing tags which are added to packets in the switch. As the circuit is composed of two parts, the contention solver and the packet distribution network, the transfer rate is raised because it doesn't need to wait any more while a data packet passes through the distribution network. Simulation results using JSIM show that the switch circuit can operate at a clock frequency of 40 GHz.

This paper describes an effective model which reproduces the dependence on the source/drain (S/D) process of the reverse short channel effect (RSCE) of the MOSFET threshold voltage (Vth). It is useful for local modeling which is effective within the limited process conditions. The proposed model is based on the physics where the key factor of RSCE is the dopant pile-up in the Si/SiO2 interface. The purpose of the model is for TCAD to be put to actual use as a quick solution tool. The calculation cost is much lower than a pair diffusion model, because the model is implemented in a conventional process simulator that solves one equation for each impurity. The capability of the simplified model is investigated for the dependence of various process conditions on the RSCE. Using our model, we also report the application of both the actual n-channel and p-channel MOSFETs.

A simple and practical methodology to make microwave voltage-controlled oscillators (VCOs) very linear is presented. Incorporating a very short microstrip line ( λg/4) for varactor's bias feed, the C-V curve was shifted by a constant -Δ C and performed a capacitance tailored nearly proportional to VCONT-2. This modification featured very linear VCO implementation at no expense of housing and phase noise performance. Ka- and Ku-band VCOs fabricated with this new technique exhibited a constant tuning sensitivity in a wide control voltage range (2-10 V). The phase noise level at 100 kHz offset was as low as -107 dBc/Hz for a 13 GHz-band VCO and better than -85 dBc/Hz for a 38 GHz-band VCO, due to combination of capacitor-coupled high-Q resonator and multiplier. This technology is very effective for quasi-millimeter-wave and millimeter-wave FM/FSK modulation and FMCW radar applications.

We developed the new electron gun, which can emit about twice electron in comparison with the conventional gun and could achieve the screen brightness of over 300 cd/m2 even if the ordinal driving circuit is applied. We tried two methods to improve the drive characteristics, and we chose to lower the cathode cut-off voltage. To maintain the resolution, we optimized the triode. And we used the tungsten-coated oxide cathode to guarantee the long life.

A method to characterise the wall voltage distribution in a three-electrode AC PDP cell is discussed. The method makes use of a firing voltage loop in a two-dimensional voltage plane. From this "fingerprint," data on the relative wall voltages as well as on the non-uniformity of the wall voltages can be inferred. The properties of the loop are explained using a simple numerical model based on field line tracing. The fingerprint method is applied to analyse ramp waveforms on the scan and data electrode of a surface discharge PDP. Many features of the measurements can be understood in terms of uniform wall voltage distributions on the dielectrics covering the electrodes. A more detailed analysis, however, shows that considerable wall voltage non-uniformities can exist, which play an important role in the firing behaviour of the cell.

MOSFETs can be used as capacitors, but its capacitance can vary by 5 to 7 times as its terminal voltage varies. To reduce the voltage dependence of the capacitance, this paper proposed two types of devices: one is called accumulation MOSFET (AMOS) and the other is formed by two conventional PMOS connected in anti-parallel. These two devices are readily available in the standard digital CMOS processes. The proposed capacitors were implemented in three different CMOS processes. The measured results show that the capacitances of both devices have less voltage dependence than a single PMOS. The voltage dependence of the AMOS capacitance can be as small as 17%. The minimum capacitance per unit area of the AMOS is 1.8 times that of the double-poly capacitor in an analog/mixed-mode CMOS process. To verify the usefulness of these two types of capacitors, they are used as compensation capacitors in a conventional two-stage amplifier. The measured results show that the amplifier compensated by the AMOS capacitor has little variation (6%) of the unity-gain frequency over the input common-mode range. Due to its smaller die area and cheaper digital process, AMOS can be used as compensation capacitor without resorting to more expensive analog process.