A multi-phase crystal-less clock generator (MPCLCG) with a process-voltage-temperature (PVT) calibration circuit is proposed. It operates at 192 MHz with 8 phases outputs, and is implemented as a 0.18µm CMOS process for digital power management systems. A temperature calibrated circuit is proposed to align operational frequency under process and supply voltage variations. It occupies an area of 65µm × 75µm and consumes 1.1mW with the power supply of 1.8V. Temperature coefficient (TC) is 69.5ppm/°C from 0 to 100°C, and 2-point calibration is applied to calibrate PVT variation. The measured period jitter is a 4.58-ps RMS jitter and a 34.55-ps peak-to-peak jitter (P2P jitter) at 192MHz within 12.67k-hits. At 192MHz, it shows a 1-MHz-offset phase noise of -102dBc/Hz. Phase to phase errors and duty cycle errors are less than 5.5% and 4.3%, respectively.

In synchronous LSI circuits, memory subsystems such as Flip-Flops and SRAMs are essential components and latches are the base elements of the common memory logics. In this paper, a stability analysis method for latches operating in a low voltage region is proposed. The butterfly curve of latches is a key for analyzing a retention failure of latches. This paper discusses a modeling method for retention stability and derives an analytical stability model for latches. The minimum supply voltage where the latches can operate with a certain yield can be accurately derived by a simple calculation using the proposed model. Monte-Carlo simulation targeting 65nm and 28nm process technology models demonstrates the accuracy and the validity of the proposed method. Measurement results obtained by a test chip fabricated in a 65nm process technology also demonstrate the validity. Based on the model, this paper shows some strategies for variation tolerant design of latches.

This paper presents a wide-input-voltage-range and high-efficiency boost converter that is assisted by a transformer-based oscillator. The oscillator can provide a sufficient amount of power to drive a following switched-inductor boost converter at low voltages. Moreover, it adopts a novel amplitude-regulation circuit (ARC) without using high power-consuming protective devices to suppress the expansion of the oscillation amplitude at high input voltages. Therefore, it can avoid over-voltage problems without sacrificing the power efficiency. Additionally, a power-down circuit (PDC) is implemented to turn off the oscillator, when the boost converter can be driven by its own output power, thus, eliminating the power consumption by the oscillator and improving the power efficiency. We implemented the ARC and the PDC with discrete components rather than one-chip integration for the proof of concept. The experimental results showed that the proposed circuit became possible to operate from an input voltage of 60mV to 3V while maintaining high peak efficiency up to 92%. To the best of our knowledge, this converter provides a wider input range in comparison with the previously-published converters. We are convinced that the proposed approach by inserting an appropriate start-up circuit in a commercial converter will be effective for rapid design proposals in order to respond promptly to customer needs as Internet of things (IoT) devices with energy harvester.

This paper proposes a power supply voltage control technique, and demonstrates its effectiveness for eliminating the overkills and underkills due to the power supply characteristic difference between an automatic test equipment (ATE) and a practical operating environment of the DUT. The proposed method controls the static power supply voltage on the ATE system, so that the ATE can eliminate misjudges for the Pass or Fail of the DUT. The method for calculating the power supply voltage is also described. Experimental results show that the proposed method can eliminate 89% of overkills and underkills in delay fault testing with 105 real silicon devices. Limitations of the proposed method are also discussed.

A CMOS bandgap reference circuit without resistors, which can successfully operate under 1V supply voltage is proposed. The improvement is realized by the technique of the voltage divider and a new current source. The most attractive merit is that the proposed circuit breaks the bottleneck of low supply voltage design caused by the constant bandgap voltage value (1.25V). Moreover, the temperature coefficient of the reference voltage Vref is improved by compensating the temperature dependence caused by the current source. The simulation results using a standard CMOS 0.18 um process show that the value of Vref can be achieved around 0.5 V with a minimum supply voltage of 0.85 V. Meanwhile, the temperature coefficient of the output voltage is only 3.5ppm/°C from 0 °C to 70 °C.

This paper describes, for the first time, the circuit design considerations and measurements of core building blocks that support a 1.9-GHz-band (Band I) BiFET MMIC three-power-mode power amplifier (PA) for WCDMA handset applications. The blocks are a reference voltage (Vref) generator, a control logic circuit, and ESD protection circuits. Our proposed Vref-generator, based on a current-mirror topology, can successfully suppress Vref variation against threshold voltage (Vth) dispersion in the FET as well as current gain dispersion in the HBT. On-wafer measurements over several wafer lots show that the standard deviation of Vref is as small as 18 mV over a Vth dispersion range from -0.6 V to -1.0 V. As a result, the measured quiescent current dispersion in the HPM is also suppressed to less than 5.4 mA, despite the fact that the average quiescent current is relatively high, at 81.3 mA. Several simulations reveal that small decoupling capacitances of approximately 1 pF added to the gate control lines of RF switch FETs ensure stable operation of the control logic even if an undesired RF coupling is present between an RF signal path and the gate lines. An empirical and useful design approach for ESD protection using HBT base-collector diodes allows easy and precise estimation of the HBM ESD robustness. With the above building blocks, a 3 mm × 3 mm PA was designed and fabricated by an in-house BiFET process. Measurements conducted under the conditions of a 3.4-V supply voltage and a 1.95-GHz WCDMA modulated signal are as follows. The PA delivers a 28.3-dBm output power (Pout), a 28.2-dB power gain (Gp), and 40% PAE while restricting the ACLR1 to less than -42 dBc in the HPM. In the MPM, 17.4 dBm of Pout, 15.9 dB of Gp, and 25.3% of PAE are obtained, while in the LPM, the PA delivers 7 dBm of Pout, 11.7 dB of Gp, and 13.9% of PAE. The HBM ESD robustness is 2 kV.

A striped inductor and its utilization of a voltage-controlled oscillator (VCO) are studied with the aim of suppressing phase noise degradation in K- and Ka-bands. The proposed striped inductor exhibits reduced series resistance in the high frequency region by increasing the cross-sectional peripheral length, as with the Litz wire, and the VCO of the striped inductor simultaneously exhibits a lower phase noise than that of the conventional inductor. Striped and conventional inductors and VCOs are designed and fabricated, and their use of K- and Ka-bands is measured. Results show that the Q factor and corner frequency of the striped inductor are approximately 1.3 and 1.6 times higher, respectively, than that of the conventional inductor. Moreover, the 1-MHz-offset phase noise of the striped inductor's VCO in the K- and Ka-bands was approximately 3.5 dB lower than that of the conventional inductor. In this study, a 65-nm standard CMOS process was used.

We propose a low-noise and low-power dynamic comparator with an offset calibration circuit for Low-Power ADCs. The proposed comparator equips the control circuit in order to switching the comparison accuracy and the current consumption. When high accuracy is not required, current consumption is reduced by allowing the noise increase. Compared with a traditional dynamic comparator, the proposed architecture reduced the current consumption to 78% at 100MHz operating and 1.8V supply voltage. Furthermore, the offset voltage is corrected with minimal current consumption by controlling the on/off operation of the offset calibration circuit.

An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.

The threshold voltage variations for actual size MOSFETs obtained by capacitance measurement are compared with those obtained by the current measurement, and their differences are studied for the first time. It is found that the threshold voltage variations obtained by the capacitance measurement show the similar behavior to those current measurement and the absolute value is less than those obtained by the current measurement. The reason for the difference is partially explained by that the local channel dopant non-uniformity along the current path makes the threshold voltage variation obtained from current measurement larger. It is found that the flat-band voltage variations, which are obtained from the measured C-V curves, are small and not significant to the threshold voltage variation.

This paper presents a varactor-based all-digital phase-locked loop (ADPLL) with a multi-phase digitally controlled oscillator (DCO) for near-threshold voltage operation. In addition, a new all-digital reference spur suppression (RSS) circuit with multiple phases random-sampling techniques to effectively spread the reference clock frequency is proposed to randomize the synchronized DCO register behavior and reduce the reference spur. Because the equivalent reference clock frequency is reserved, the loop behavior is maintained. The area of the proposed spur suppression circuit is only 4.9% of the ADPLL (0.038 mm2). To work reliably at the near-threshold region, a multi-phase DCO with NMOS varactors is presented to acquire precise frequency resolution and high linearity. In the near-threshold region (VDD =0.52 V), the ADPLL only dissipates 269.9 μW at 100 MHz output frequency. It has a reference spur of -52.2 dBc at 100 MHz output clock frequency when the spur suppression circuit is deactivated. When the spur suppression circuit is activated, the ADPLL shows a reference spur of -57.3 dBc with the period jitter of 0.217% UI.

Patch clamp measurement technique is one of the most important techniques in the field of electrophysiology. The elucidation of the channels, nerve cells, and brain activities as well as contribution of the treatment of neurological disorders is expected from the measurement of ion current. A current-to-voltage converter, which is the front end circuit of the patch clamp measurement system is fabricated using 0.18µm CMOS technology. The current-to-voltage converter requires a resistance as high as 50MΩ as a feedback resistor in order to ensure a high signal-to-noise ratio for very small signals. However, the circuit becomes unstable due to the large parasitic capacitance between the poly layer and the substrate of the on-chip feedback resistor and the instability causes the peaking at lower frequency. The instability of a current-to-voltage converter with a high-resistance as a feedback resistor is analyzed theoretically. A compensation circuit to stabilize the amplifier by driving the N-well under poly resistor to suppress the effect of parasitic capacitance using buffer circuits is proposed. The performance of the proposed circuit is confirmed by both simulation and measurement of fabricated chip. The peaking in frequency characteristic is suppressed properly by the proposed method. Furthermore, the bandwidth of the amplifier is expanded up to 11.3kHz, which is desirable for a patch clamp measurement. In addition, the input referred rms noise with the range of 10Hz ∼ 10kHz is 2.09 Arms and is sufficiently reach the requirement for measure of both whole-cell and a part of single-channel recordings.

In this paper, an analytical threshold voltage model of the strained gate-all-around MOSFET fabricated on the Si1-xGex virtual substrate is presented by solving the two-dimensional Poisson equation. The impact of key parameters such as the strain, channel length, gate oxide thickness and radius of the silicon cylinder on the threshold voltage has been investigated. It has been demonstrated that the threshold voltage decreases as the strain in the channel increases. The threshold voltage roll-off becomes severe when increasing the Ge content in the Si1-xGex virtual substrate. The model is found to tally well with the device simulator.

In this paper, we propose a low-power circuit-shared static flip-flop (CS2FF) for extremely low power digital VLSIs. The CS2FF consists of five static NORs and two inverters (INVs). The CS2FF utilizes a positive edge of a buffered clock signal, which is generated from a root clock, to take data into a master latch and a negative edge of the root clock to hold the data in a slave latch. The total number of transistors is only 24, which is the same as the conventional transmission-gate flip flop (TGFF) used in the most standard cell libraries. SPICE simulations in 0.18-µm standard CMOS process demonstrated that our proposed CS2FF achieved clock-to-Q delay of 18.3ns, setup time of 10.0ns, hold time of 5.5ns, and power dissipation of 9.7nW at 1-MHz clock frequency and 0.5-V power supply. The physical design area increased by 16% and power dissipation was reduced by 13% compared with those of conventional TGFF. Measurement results demonstrated that our proposed CS2FF can operate at 0.352V with extremely low energy of 5.93fJ.

The effect of annealing on the field emission characteristics of a field emitter comprising diamond micropowder was investigated. The threshold voltage Vth at which the emission current begins to flow decreased as the annealing temperature increased, and a minimum Vth was obtained at an annealing temperature of 1345K. The reduction in threshold voltage was due to a reduction in the work function with annealing.

In this paper, a new single soft switched forward converter with a self driven synchronous rectification (SDSR) is introduced. In the proposed converter, a soft switching condition (ZCS turn on and ZVS turn off) is provided for the switch, by an auxiliary circuit without any extra switch. In additional, this auxiliary circuit does not impose high voltage or current stresses on the converter. Since the proposed converter uses SDSR to reduce conductive loss of output rectifier, the rectifier switches are switched under soft switching condition. So, the conductive and switching losses on the converter reduce considerably. Also, implementing control circuit of this converter is very simple, due to the self-driven method employed in driving synchronous rectification and the converter is controlled by pulse width modulation (PWM). The experimental results of the proposed converter are presented to confirm the theoretical analysis.

In this study, we propose a two-step approach to evaluate electromagnetic interference (EMI) with a wearable vital signal sensor. The two-step approach combines a quasi-static electromagnetic (EM) field analysis and an electric circuit analysis, and is applied to the EMI evaluation at frequencies below 1 MHz for our developed wearable electrocardiogram (ECG) to demonstrate its usefulness. The quasi-static EM field analysis gives the common mode voltage coupled from the incident EM field at the ECG sensing electrodes, and the electric circuit analysis quantifies a differential mode voltage at the differential amplifier output of the ECG detection circuit. The differential mode voltage has been shown to come from a conversion from the common mode voltage due to an imbalance between the contact impedances of the two sensing electrodes. When the contact impedance is resistive, the induced differential mode voltage increases with frequency up to 100kHz, and keeps constant after 100kHz, i.e., exhibits a high pass filter characteristic. While when the contact impedance is capacitive, the differential mode voltage exhibits a band pass filter characteristic with the maximum at frequency of around 150kHz. The differential voltage may achieve nearly 1V at the differential amplifier output for an imbalance of 30% under 10V/m plane-wave incident electric field, and completely mask the ECG signal. It is essential to reduce the imbalance as much as possible so as to prevent a significant interference voltage in the amplified ECG signal.

This paper presents a cell-based all-digital phase-locked loop (ADPLL) with hierarchical gated digitally controlled oscillator (G-DCO) for low voltage operation, wide frequency range as well as low-power consumption. In addition, a new time-domain hierarchical frequency estimation algorithm (HFEA) for frequency acquisition is proposed to estimate the output frequency in 1.5MF (MF = 3 in this paper) cycles and this fast lock-in time is suitable to the dynamic voltage frequency scaling (DVFS) systems. A hierarchical G-DCO is proposed to work at low supply voltage to reduce the power consumption and at the same time to achieve wide frequency range and precise frequency resolution. The core area of the proposed ADPLL is 0.02635 mm2. In near-threshold region (VDD = 0.36 V), the proposed ADPLL only dissipates 68.2 µW and has a rms period jitter of 1.25% UI at 60 MHz output clock frequency. Under 0.5 V VDD operation, the proposed ADPLL dissipates 404.2 µW at 400 MHz. The fast lock-in time of 4.489 µs and the low jitter performance below 0.5% UI at 400 MHz output clock frequency in the proposed ADPLL are suitable in event-driven or DVFS applications.

A forward/reverse body bias generator (BBG) which operates under wide supply-range is proposed. Fine-grained body biasing (FGBB) is effective to reduce variability and increase energy efficiency on digital LSIs. Since FGBB requires a number of BBGs to be implemented, simple design is preferred. We propose a BBG with charge pumps for reverse body bias and the BBG operates under wide supply-range from 0.5,V to 1.2,V. Layout of the BBG was designed in a cell-based flow with an AES core and fabricated in a 65~nm CMOS process. Area of the AES core is 0.22 mm$^2$ and area overhead of the BBG is 2.3%. Demonstration of the AES core shows a successful operation with the supply voltage from 0.5,V to 1.2,V which enables the reduction of power dissipation, for example, of 17% at 400,MHz operation.

Cell voltage equalizers are necessary to ensure years of operation and maximize the chargeable/dischargeable energy of series-connected supercapacitors (SCs). A two-switch voltage equalizer using a series-resonant voltage multiplier operating in frequency-multiplied discontinuous conduction mode (DCM) is proposed for series-connected SCs in this paper. The frequency-multiplied mode virtually increases the operation frequency and hence mitigates the negative impact of the impedance mismatch of capacitors on equalization performance, allowing multi-layer ceramic capacitors (MLCCs) to be used instead of bulky and costly tantalum capacitors, the conventional approach when using voltage multipliers in equalizers. Furthermore, the DCM operation inherently provides the constant current characteristic, realizing the excessive current protection that is desirable for SCs, which experience 0V and equivalently become an equivalent short-circuit load. Experimental equalization tests were performed for eight SCs connected in series under two frequency conditions to verify the improved equalization performance at the increased virtual operation frequencies. The standard deviation of cell voltages under the higher-frequency condition was lower than that under the lower-frequency condition, demonstrating superior equalization performance at higher frequencies.