In this paper, new structure of Voltage-Mode MAX-MIN circuit are presented for nonlinear systems, fuzzy applications, neural network and etc. A differential pair with improved cascode current mirror is used to choose the desired input. The advantages of the proposed structure are high operating frequency, high precision, low power consumption, low area and simple expansion for multiple inputs by adding only three transistors for each extra input. The proposed circuit which is simulated by HSPICE in 0.35 µm CMOS process shows the total power consumption of 85 µW in 5 MHz operating frequency from a single 3.3-V supply. Also, the total area of the proposed circuit is about 420 µm2 for two input voltages, and would be negligibly increased for each extra input.

To explain the variation of the address discharge during an address period, the wall voltage variation during an address period was investigated as a function of the address-on-time by using the Vt closed curves. It was observed that the wall voltage between the scan and address electrodes was decreased with an increase in the address-on-time. It was also observed that the wall voltage variation during an address period strongly depended on the voltage difference between the scan and address electrodes. Based on this result, the modified driving waveform to raise the level of Vscanw, was proposed to minimize the voltage difference between the scan and address electrodes. However, the modified driving waveform resulted in the increase in the falling time of scan pulse. Finally, the overlapped double scan waveform was proposed to reduce a falling time of scan pulse under the raised voltage level of Vscanw, also.

A new on-chip current sensing circuit suitable for step-down switch-mode power converters (SMPC) is presented in this paper. It can be used in a high speed SMPC. The sense voltage is quite accurate and temperature independent. The structure is very simple. Only eight transistors and a sensing resistor are used. This current sensing technique has been fabricated with a standard 0.5 µm DPDM CMOS process. Experimental results show that the proposed circuit can work well in DC-DC converters such that the loading current can be managed through control theories.

The novel SCR-based (silicon controlled rectifier) device for ESD power clamp is presented in this paper. The proposed device has a high holding voltage and a high triggering current characteristic. These characteristics enable latch-up immune normal operation as well as superior full chip ESD protection. The device has a small area in requirement robustness in comparison to ggNMOS (gate grounded NMOS). The proposed ESD protection device is designed in 0.25 µm and 0.5 µm CMOS Technology. In the experimental result, the proposed ESD clamp has a double trigger characteristic, a high holding voltage of 4 V and a high trigger current of above 350 mA. The robustness has measured to HBM 8 kV (HBM: Human Body Model) and MM 400 V (MM: Machine Model). The proposed device has a high level It2 of 52 mA/ µm approximately.

In this paper, a low power current protection circuit implemented in a low dropout regulator (LDO) is presented. The proposed circuit, designed in a 0.35 µm CMOS process, provides a precise limiting current as well as holding current with low dependency on both supply voltage and regulator output voltage. The experimental results showed that the proposed circuit is operable in the regulator output voltage range from VOUT=1.2 V to VOUT=3.6 V and supply voltage range from VDD=VOUT+0.5 V to VDD=5.6 V. Since the proposed circuit is composed of few simple basic circuits such as a comparator and a Schmitt Trigger, it has a low current consumption of less than ISS=0.82 µA at a load current of ILOAD=200 mA. This makes the circuit suitable for low power and low voltage LDO design.

This work describes a 12-bit 100 MS/s 0.13 µm CMOS ADC for 3G wireless communication systems such as two-carrier W-CDMA applications. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient gate-bootstrapped sampling switches of the input SHA maintain high signal linearity over the Nyquist rate even at a 1.0 V supply. The cascode compensation using a low-impedance feedback path in two-stage amplifiers of the SHA and MDACs achieves the required conversion speed and phase margin with less power consumption and area compared to the Miller compensation. A low-glitch dynamic latch in the sub-ranging flash ADCs reduces kickback noise referred to the input of comparator by isolating the pre-amplifier from the regeneration latch output. The proposed on-chip current and voltage references are based on triple negative TC circuits. The prototype ADC in a 0.13 µm 1P8M CMOS technology demonstrates the measured DNL and INL within 0.38LSB and 0.96LSB at 12-bit, respectively. The ADC shows a maximum SNDR and SFDR of 64.5 dB and 78.0 dB at 100 MS/s, respectively. The ADC with an active die area of 1.22 mm2 consumes 42.0 mW at 100 MS/s and a 1.2 V supply, corresponding to a figure-of-merit of 0.31 pJ/conversion-step.

This letter presents a new quadrature voltage-controlled oscillator (QVCO) consisting of two n-core Colpitts voltage-controlled oscillators (VCOs) with a tail inductor. The VCOs are used as a single-ended injected injection-locked frequency divider (ILFD). The output of the tail inductor in one ILFD is injected into the injection node in the other ILFD and vice versa. The proposed QVCO has been implemented in the 0.18 µm CMOS technology. At the supply voltage of 1.0 V, the power consumption is 1.8 mW. The free-running frequency is tunable from 4.68 GHz to 5.03 GHz as the tuning voltage is varied from 0.0 V to 1.8 V. The measured phase noise is -113.58 dBc/Hz at the 1 MHz frequency offset from the oscillation frequency of 5.03 GHz and the figure of merit (FOM) of the QVCO is -185.06 dBc/Hz.

Using the transient current switch circuit in parallel with the energizing contacts, the slow decay of the contact current due to thermal fusion of metal was observed just after the contact voltage exceeded the melting contact voltage Um. At that time, the contact voltage was higher than the boiling contact voltage Ub. These results contradict Holm's θ theory. A new melting model of breaking mechanical contact is proposed. The area surrounding a cluster of contacting a-spots melts, the melt metal diffuses, and the contact spot thermally shrinks. Including the metal phase transition from solid to liquid, the increase of contact resistance is introduced to the electric circuit analysis. The numerical analysis agrees qualitatively with measured V-I characteristics.

Using the transient current switch circuit in parallel with the energizing switching contacts for timely control of breaking operation, the increase of contact voltage is suppressed at the last stage of the breaking of electric contacts. Breaking contact voltage Vc and current Ic of electromagnetic relays with Ag contacting electrodes were measured with 12.5-50 V and 0.1-20 A for two hinge springs (Spring constants; 2 N/mm and 0.2 N/mm). The current-decreasing process was clearly measured at the melting voltage Um. After Vc=Um, the breaking time of contact current did not depend on mechanical motion controlled by the two hinge springs and energizing power-supply voltage, but depended on the contact current. The residue of melt electrode was observed optically as a white fusion spot, with radius depending on the energizing current.

This study utilizes a new adaptive sense current controller to get an accurate power supply. The proposed controller effectively reduces output ripple voltage of converters operated over the load current range. This reduction is realized using an adaptive sense current circuit that automatically adjusts the inductor current according to operational conditions. The proposed boost converter is designed and fabricated with a standard TSMC 3.3/5 V 0.35-µm 2P4M CMOS technology. The experimental results show that the power-conversion efficiency of the proposed boost converter is 2-5% higher than that of the conventional converter with a current-limited circuit. The proposed circuit greatly reduces (i.e. by 76%) output ripple voltage compared with the conventional circuit at a 10 mA loading current.

A high-speed and ultra-low-voltage divide-by-4/5 counter with dynamic floating input D flip-flop (DFIDFF) is presented in this paper. The proposed DFIDFF and control logic gates are merged to reduce effective capacitance of internal and external nodes, and increase the operating speed of divide-by-4/5 counter. The proposed divide-by-4/5 counter is fabricated in a 0.13-µm CMOS process. The measured maximum operating frequency and power consumption of the counter are 600 MHz and 8.35 µW at a 0.5 V supply voltage. HSPICE simulations demonstrate that the proposed counter (divide-by-4) reduces power-delay product (PDP) by 37%, 71%, and 57% from those of the TGFF counter, Yang's counter [1], and the E-TSPC counter [2], respectively.

Recent progress in scaled CMOS technologies can enhance signal bandwidth and clock frequency of analog-digital mixed VLSIs. However, the inevitable reduction of supply voltage causes a signal voltage mismatch between a non-scaled analog chip and a scaled A-D mixed chip. To overcome this problem, we present a Delta-Amplifier (DeltAMP) which can handle larger signal amplitude than the supply voltage. DeltaAMP folds a delta signal of an input voltage within a window using a virtual ground amplifier, modulation switches and comparators. For reconstruction of the folded delta signal to the ordinal signal, Analog-Time-Digital conversion (ATD) was also proposed, in which pulse-width analog information obtained at the comparators in DeltAMP was converted to a digital signal by counting. A test chip of DeltAMP with ATD was designed and fabricated using a 90 nm CMOS technology. A 2 Vpp input voltage range and 50 µW power consumption were achieved by the measurements with a 0.5 V supply. High accuracy of 62 dB SNR was obtained at signal bandwidth of 120 kHz.

This paper presents a 1 V operating fully differential OTA using NMOS inverters in place of the traditional differential pair. To obtain high gain, a two-stage configuration is used in which the first stage has feedforward paths to cancel the common-mode signal, and the second stage has common-mode feedback paths to stabilize the output common-mode voltage. The proposed OTA was fabricated by an 0.18 µm CMOS technology. Measured gain is 40 dB and GBW is 10 MHz, in addition to differential output voltage swing of 1.8 Vp - p. It is confirmed that the proposed OTA can operate from 1 V power supply and has very large output swing capability even in a 1 V operation. The proposed OTA configuration contributes to a solution to the low power supply voltage issue in scaled CMOS analog circuits.

In this paper, a novel 800 mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18 µm CMOS process with nominal Vth of 420 mV and -450 mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50 µW.

We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90 nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.

A novel voltage measurement circuit which utilizes process variation is proposed. Using the proposed circuit, the voltage of a nonperiodic waveform at a particular time point can be accurately captured by a single clock pulse (one-shot measurement). The proposed circuit can be designed without compensation circuits against process variation, and thus occupies only a small area. An analytical expression of offset voltage for the comparator utilizing process variation (UPV-comparator), which plays a key role in the proposed circuit, is derived and design considerations for the proposed circuit are discussed. The circuit operation is confirmed through SPICE simulation using 90 nm CMOS device models. The -0.04 and -3 dB bandwidths (99% and 50% amplitudes) of the proposed circuit are about 10 MHz and far over 1 GHz, respectively. The circuit area is also estimated using an experimental layout.

Logical operations in CMOS digital integration are highly prone to fail as the amount of power supply (PS) drop approaches to failure threshold. PS voltage variation is characterized by built-in noise monitors in a 32-bit microprocessor of 90-nm CMOS technology, and related with operation failures by instruction-level programming for logical failure analysis. Combination of voltage drop size and activated logic path determines failure sensitivity and class of failures. Experimental observation as well as simplified simulation is applied for the detailed understanding of the impact of PS noise on logical operations of digital integrated circuits.

CMOS circuits consume great dynamic power in switching. It has been proposed that energy transfer through a rising Vdd dissipates small amounts of energy. In typical power gate circuits, the high-performance PMOS transistors (PSW) that connect the circuit blocks to the power supply reduce leakage power by shutting off outer power (Vdd) to the idle blocks. We expand this technique by utilizing active PSW, which are turned on and off by clock signal. The PSW are fully turned on only for half of each clock cycle. This means that sufficient Vdd is provided to the circuit continuously for half of each clock cycle. In this manner, the circuit charge and discharge actions are cycle occur in different phases, and ramp Vdd is supplied to the designed circuit; we name this technique "CKVdd." CKVdd is a clock-controlled self-stabilized voltage technique, which generates stable ramp voltage to suppress the currents effectively. It is proposed to reduce dynamic power dissipation in conventional CMOS digital circuits. As compared to the conventional circuit, the circuits using CKVdd technique possesses several characteristics that differ from those of the current circuits using constant Vdd power source. First, CKVdd technique combines the power source and clock signal; it is an efficient low power technique. Second, CKVdd propose a feasible method to generate ramp-Vdd and low-Vdd. This technique would be convenient used to design generic low power digital circuits. Third, normal CMOS circuits show the dynamic power consumption increase proportional to the clock frequency. CKVdd results in a lower-than-usual frequency dependency, it is suitable used to design high clock speed circuits. In investigating constant Vdd for MPEG VLD decoders, CKVdd-circuit reduces 48% of the usual power dissipation and 88% of the usual peak current with small delay penalty.

A 0.5 V transformer folded-cascode CMOS low-noise amplifier (LNA) is presented. The chip area of the LNA was reduced by coupling the internal inductor with the load inductor, and the effects of the magnetic coupling between these inductors were analyzed. The magnetic coupling reduces the resonance frequency of the input matching network, the peak frequency and magnitude of the gain, and the noise contributions from the common-gate stage to the LNA. A partially-coupled transformer with low magnetic coupling has a small effect on the LNA performance. The LNA with this transformer, fabricated in a 90 nm digital CMOS process, achieved an S11 of -14 dB, NF of 3.9 dB, and voltage gain of 16.8 dB at 4.7 GHz with a power consumption of 1.0 mW at a 0.5 V supply. The chip area of the proposed LNA was 25% smaller than that of the conventional folded-cascode LNA.

An on-chip power supply noise canceller with higher voltage supply and switching transistor is proposed and the effectiveness of the canceller is experimentally verified. The noise canceller is effective for nano-second order noise caused by circuit wakeup or step increase of frequency in frequency hopping. The principle of the noise canceller is to reduce the current flowing through the supply line of VDD by injecting additional current from the higher voltage supply, so that the voltage drop across the VDD supply line is reduced. As additional current flow from higher supply, switching transistor has to be turned off not to increase the power consumption. With turn-off time of 2L/R, this current can be turned off without inducting another droop due to the increase of current flowing through the power supply line. The measurement shows the canceller reduces 68% of the noise with load circuit equivalent to 530 k logic gates in 90-nm CMOS with 9% wire overhead, 1.5% area overhead, and 3% power overhead at 50 k wake-ups/s. Compared to passive noise reduction, proposed noise canceller reduces power supply noise by 64% without wire overhead and to achieve same noise reduction with passive method, 77 times more C or 45 times less L is required. Too large switching transistor results in saturated noise reduction effect and higher power consumption. A rule-of-thumb is to set the on-resistance to supply 100% of load current when turned-on.